Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
11/2000
11/07/2000US6144070 High breakdown-voltage transistor with electrostatic discharge protection
11/07/2000US6144066 Protection of the logic well of a component including an integrated MOS power transistor
11/07/2000US6144064 Split-gate EEPROM device having floating gate with double polysilicon layer
11/07/2000US6144062 Semiconductor device having thin electrode layer adjacent gate insulator and method of manufacture
11/07/2000US6144060 Capacitor which comprise a first dielectric layer, an electrically insulating layer on the firsst dielectric layer, and an aluminum oxide buffer layer formed by atomic layer deposition and stabilized by heat treatment
11/07/2000US6144058 Layer structure having contact hole, method of producing the same, fin-shaped capacitor using the layer structure, method of producing the fin-shaped capacitor and dynamic random access memory having the fin-shaped capacitor
11/07/2000US6144056 Methods of forming conductive lines, methods of forming insulative spacers over conductive line sidewalls, methods of forming memory circuitry, and memory circuitry
11/07/2000US6144055 Semiconductor memory device
11/07/2000US6144054 DRAM cell having an annular signal transfer region
11/07/2000US6144052 Semiconductor device and its manufacture
11/07/2000US6144051 Semiconductor device having a metal-insulator-metal capacitor
11/07/2000US6144043 Light emitting semiconductor device having plural light emitting elements with different junction depth
11/07/2000US6144041 A semiconductor with active region in which no grain boundary exists comprising a hydrogen or halogen element, nitrogen and carbon atoms, oxygen atoms to neutralize a point defect at specific densities, and metal for promoting crystallilztion
11/07/2000US6144023 Electrode support comprising at least one electrode covered by a deposit and system for reading this support
11/07/2000US6143669 Method of growing gate oxides
11/07/2000US6143642 Programmable semiconductor structures and methods for making the same
11/07/2000US6143636 High density flash memory
11/07/2000US6143635 Field effect transistors with improved implants and method for making such transistors
11/07/2000US6143619 Method for manufacturing semiconductor device and semiconductor device manufacturing apparatus
11/07/2000US6143615 Method of forming a resistor
11/07/2000US6143614 Monolithic inductor
11/07/2000US6143613 Selective exclusion of silicide formation to make polysilicon resistors
11/07/2000US6143610 Method for fabricating high-density semiconductor read-only memory device
11/07/2000US6143609 Method for forming semiconductor memory device
11/07/2000US6143608 Producing gate oxide regions in periphery regions of semiconductor chips, wherein the gate oxide regions have improved electrical properties such as increased breakdown voltage and increased reliability
11/07/2000US6143606 Method for manufacturing split-gate flash memory cell
11/07/2000US6143602 Methods of forming memory device storage capacitors using protruding contact plugs
11/07/2000US6143601 Method of fabricating DRAM
11/07/2000US6143600 Method of fabricating a semiconductor memory device having bit line directly held in contact through contact with impurity region in self-aligned manner
11/07/2000US6143597 Method of manufacturing capacitor included in semiconductor device and the capacitor thereof
11/07/2000US6143594 On-chip ESD protection in dual voltage CMOS
11/07/2000US6143593 Elevated channel MOSFET
11/07/2000US6143585 Method of manufacturing solid state image sensing device
11/07/2000US6143582 High density electronic circuit modules
11/07/2000US6143474 Method of fabricating polysilicon structures with different resistance values for gate electrodes, resistors, and capacitor plates
11/07/2000US6143063 Misted precursor deposition apparatus and method with improved mist and mist flow
11/07/2000US6142830 Signaling improvement using extended transmission lines on high speed DIMMS
11/02/2000WO2000065824A1 Active-pixel image sensing device with linear mode voltage to current conversion
11/02/2000WO2000065714A1 Integrated electronic circuit comprising an electronic component and a delay element which is connected to the component
11/02/2000WO2000065658A2 Method of structuring a metal or metal-silicide layer and a capacitor produced according to said method
11/02/2000WO2000065657A1 Resonant cavity field enhancing boundary
11/02/2000WO2000065656A1 Substrate contact for a conductive trough in a semiconductor
11/02/2000WO2000065655A1 A semiconductor device with an operating frequency larger than 50mhz comprising a body composed of a soft ferrite material
11/02/2000WO2000065654A1 Method and apparatus using silicide layer for protecting integrated circuits from reverse engineering
11/02/2000WO2000065650A1 Semiconductor device and method of manufacture
11/02/2000WO2000065648A1 Circuit suitable for vertical integration and method of producing same
11/02/2000WO2000065646A1 A super-self-aligned trench-gate dmos with reduced on-resistance
11/02/2000WO2000065616A1 Electronic device and manufacture thereof
11/02/2000WO2000065376A1 Device for imaging radiation
11/02/2000WO2000065374A1 A method for calculating gain correction factors in a digital imaging system
11/02/2000WO2000065317A1 Photodetector
11/02/2000EP1049176A2 Electronic device and electronic apparatus
11/02/2000EP1049173A1 Semiconductor devices with multiple power supplies and methods of manufacturing such devices
11/02/2000EP1049172A2 A SOI structure semiconductor device and a fabrication method thereof
11/02/2000EP1049171A1 Solid-state imaging device and solid-state imaging array
11/02/2000EP1049170A1 Miniaturised gamma camera with semiconductor detectors
11/02/2000EP1049169A1 Emitting-receiving optoelectronic device having a reduced crosstalk
11/02/2000EP1049168A2 Semiconductor device
11/02/2000EP1049167A2 Semiconductor device and manufacturing method thereof
11/02/2000EP1049166A2 CMOS inverter and standard cell using the same
11/02/2000EP1049165A1 Integrated circuit structure comprising a power circuit portion and a control circuit portion, without parasitic currents
11/02/2000EP1049160A1 New contact shape for giga scale borderless contacts and method for making the same
11/02/2000EP1049159A2 A method of forming dual thickness gate oxide in a semiconductor device
11/02/2000EP1049156A1 Manufacturing process of integrated SOI circuit structures
11/02/2000EP1049155A1 Process for manufacturing a SOI wafer with buried oxide regions without cusps
11/02/2000EP1049154A2 Process for forming device isolation region
11/02/2000EP1049149A2 Multi-phase lead germanate film and deposition method
11/02/2000EP1049148A2 C-axis oriented lead germanate film and deposition method
11/02/2000EP1049147A2 Epitaxially grown lead germanate film
11/02/2000EP1049146A2 Method and apparatus for forming an inlaid capacitor in a semiconductor wafer
11/02/2000EP1049102A2 Non-volatile semiconductor memory device
11/02/2000EP1049101A2 Semiconductor memory cell
11/02/2000EP1048957A2 Integrated circuit device having process parameter measuring circuit
11/02/2000EP1048189A1 Method and device for manufacturing an electroluminescent display screen
11/02/2000EP1048082A1 Circuitry with at least one capacitor and process for producing the same
11/02/2000EP1048080A1 Semiconductor device
11/02/2000EP1048078A1 Lateral bipolar transistor and method of making same.
11/02/2000EP1048077A1 Power transistor device
11/02/2000EP1048076A1 Low trigger and holding voltage scr device for esd protection
11/02/2000EP1048067A1 Thin film transistors and their manufacture
11/02/2000EP1048065A2 Method of manufacturing a semiconductor device with a bipolar transistor
11/02/2000EP1048064A1 Etching methods for anisotropic platinum profile
11/02/2000EP1048060A1 Semiconductor body having a surface provided with a coil having a magnetic core
11/02/2000EP0990059A4 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
11/02/2000EP0722619B1 Varactor diode having a stepped capacitance-voltage profile
11/02/2000DE19961135A1 Voltage detection circuit for use in semiconductor memory component, includes compensation current generation section for preventing potential of signalling line VPP from rising steeply
11/02/2000DE19927694C1 Semiconductor sensor with pixel structure e.g. for optoelectronic image sensor has overall conductive layer provided with gaps between individual pixel elements filled with relatively insulated conductive layer
11/02/2000DE19918966A1 Overcurrent protection method for insulated gate bipolar transistor (IGBT) in static converter of electric drive, monitors, reduces and adjusts cathode voltage in such a way that transistor is switched off when threshold value is exceeded
11/02/2000DE19918671A1 Vertikal integrierbare Schaltung und Verfahren zu ihrer Herstellung Vertically integrated circuit, and processes for their preparation
11/02/2000DE19918028A1 Halbleiter-Bauelement Semiconductor component
11/02/2000DE19917589C1 Halbleiterspeicher vom wahlfreien Zugriffstyp Semiconductor memory of the random access type
11/02/2000DE10018126A1 Semiconductor device, especially a highly integrated device mounted on an insulating circuit board, has a bottom contact with an outer periphery not covered by a conductor connecting the circuit board to the device substrate
11/02/2000CA2367824A1 A method for calculating gain correction factors in a digital imaging system
11/01/2000CN1272223A Reduction of gate-induced drain leakage in semiconductor devices
11/01/2000CN1271963A Non volatile semi conductor memory device and its manufacturing method
11/01/2000CN1271961A Method of forming storage capacitor
11/01/2000CN1271945A Non volatile semiconductor memory
11/01/2000CN1271871A Corrosion technique of anisotropic nitride by inlay corrosion method
11/01/2000CN1058110C Layout method of semiconductor IC
10/2000
10/31/2000USRE36938 Method of forming a landing pad structure in an integrated circuit
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