Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
07/2012
07/25/2012CN102610528A Method for reducing grid induction drain leakage of semiconductor device and method for manufacturing metal oxide semiconductor (MOS) device
07/25/2012CN102610527A Manufacture method of metal oxide semiconductor (MOS) device for improving frequency characteristics of common source operation amplifier
07/25/2012CN102610526A Side wall etching method for reducing heat current carrier injection damage
07/25/2012CN102610525A Method for reducing leakage of gate-induced drain electrode of semiconductor device
07/25/2012CN102610524A Method for manufacturing metal-oxide film transistor with embedded gate structure
07/25/2012CN102610523A Method for integrating Schottky diode in super-junction MOSFET (metal-oxide-semiconductor field effect transistor)
07/25/2012CN102610522A Method for forming bottom oxide layer in double-layered gate groove MOS (Metal Oxide Semiconductor) structure
07/25/2012CN102610521A Manufacturing method and structure of asymmetrical high-voltage MOS (metal oxide semiconductor) device
07/25/2012CN102610520A Preparation method of polycrystalline silicon thin film transistor
07/25/2012CN102610519A Method for manufacturing polysilicon thin-film transistor
07/25/2012CN102610518A Slimming method of carbon-containing thin film and oxidation apparatus
07/25/2012CN102610517A Method for forming front metal dielectric layer
07/25/2012CN102610516A Method for improving adhesion force between photoresist and metal/metallic compound surface
07/25/2012CN102610515A Methods for high temperature etching a high-k material gate structure
07/25/2012CN102610514A Susbtrate treatment method and substrate treatment apparatus
07/25/2012CN102610513A Method for forming silicon nitride film on dual-stress layer
07/25/2012CN102610512A Method for forming front metal dielectric layer
07/25/2012CN102610511A Method for removing photoresist
07/25/2012CN102610510A Insert carrier and method for the simultaneous double-side material-removing processing of semiconductor wafers
07/25/2012CN102610509A Method of forming element isolation layer
07/25/2012CN102610508A Preparation method of floating gate
07/25/2012CN102610507A Method for reducing gate-induced drain leakage of semiconductor device, and manufacturing method of MOS (metal oxide semiconductor) device
07/25/2012CN102610506A Method for etching bi-grid oxide layer in BCD technology
07/25/2012CN102610505A Heavy doping method of source electrode and drain electrode, semiconductor device and manufacturing method thereof
07/25/2012CN102610504A Method for preparing floating gate
07/25/2012CN102610503A Method for improving reading redundancy rate of random access memory
07/25/2012CN102610502A MOS element manufacturing method for reducing damage caused by hot carriers injection
07/25/2012CN102610501A Side wall etching method for improving writing speed of floating body effect storage unit
07/25/2012CN102610500A Method for preparing N-type heavily-doping silicon carbide film epitaxy
07/25/2012CN102610499A Method for preparing multi-layer-film structure with polycrystalline silicon thin film
07/25/2012CN102610498A Method for forming photoresist layer
07/25/2012CN102610497A Wafer surface repair method
07/25/2012CN102610496A Photoresist removing method of structure with large height-width ratio
07/25/2012CN102610495A Manufacturing method of semiconductor resistor, semiconductor resistor and electronic device
07/25/2012CN102610494A Method for marking wafer, wafer with mark
07/25/2012CN102610493A Method for removing amorphous carbon films for cyclically utilizing silicon chips
07/25/2012CN102610492A Semiconductor manufacturing apparatus and semiconductor substrate bonding method
07/25/2012CN102610491A Substrate processing method and substrate processing apparatus
07/25/2012CN102610490A Method for manufacturing trench of super junction
07/25/2012CN102610489A Device for drying organic solvent film
07/25/2012CN102610488A Liquid processing apparatus and liquid processing method
07/25/2012CN102610487A Method of forming a wafer map
07/25/2012CN102610486A Continuous type semiconductor etching device and continuous type semiconductor etching method
07/25/2012CN102610481A Apparatus and plasma ashing process for increasing photoresist removal rate
07/25/2012CN102610477A Film bonding agent for semiconductor vacuum treatment device
07/25/2012CN102608873A Workbench and exposure apparatus using the same
07/25/2012CN102608872A Absorption stage, placing stage and exposure apparatus
07/25/2012CN102608861A Method for improving morphology of photoresist on periphery of silicon wafer
07/25/2012CN102608860A Photoetching method, photomask combination and exposure system
07/25/2012CN102608859A Mask plate and method for applying it to manufacture thin film transistor array substrate
07/25/2012CN102608816A Liquid crystal display (LCD) panel and manufacture method thereof
07/25/2012CN102608815A 液晶显示面板以及其制造方法 Panel and a manufacturing method of a liquid crystal display
07/25/2012CN102608777A COF (chip on film) packaging unit and COF packaging winding tape
07/25/2012CN102605373A Etching composition, and manufacturing method of array substrate for liquid crystal display device
07/25/2012CN102605372A Wet etching device for monocrystalline silicon solar cells
07/25/2012CN102605359A Structure of electrolessly palladium and gold plated films and process for making the same, assembled structure of palladium and gold plated films bonded with copper or copper-palladium wire and assembling process therefore
07/25/2012CN102605351A Method for resetting after LPCVD (low pressure chemical vapor deposition) maintenance
07/25/2012CN102605346A Preparation method of insulator silicon dioxide film in MIM (metal-insulator-metal) type capacitor
07/25/2012CN102604592A Resin composition and semiconductor devices made by using the same
07/25/2012CN102604591A Resin composition and semiconductor devices made by using the same
07/25/2012CN102604559A Connecting material and semiconductor device
07/25/2012CN102604541A Composition and method to polish silicon nitride
07/25/2012CN102604475A Radiation-curable ink for ink jet recording, record made using the same, and ink jet recording method using the same
07/25/2012CN102602701A Semiconductor device holding and holding release pressure providing system for test handler
07/25/2012CN102601938A Device and method for automatically breaking (removing) plastic sealing material slag of mold machine
07/25/2012CN102601719A Polishing method and polishing apparatus
07/25/2012CN102601718A Control method and control device for chemical mechanical grinding and method and equipment for chemical mechanical grinding
07/25/2012CN102601078A Apparatus and system for cleaning a substrate
07/25/2012CN102600690A Machining device
07/25/2012CN102194685B Method for regulating energy band compensation between Ge substrate and TixAlyO film
07/25/2012CN102184840B Method for manufacturing dual-layer quartz cylinder
07/25/2012CN102169839B Method for packaging preforming sheet by using Au-Sn solder
07/25/2012CN102163547B Method for depositing photoresist on microelectronic or photoelectronic chip
07/25/2012CN102148170B Substrate adhesion method
07/25/2012CN102136437B Anti-sinking locking device of wire bonder
07/25/2012CN102136428B Preparation method of germanium-based Schottky N-type field effect transistor
07/25/2012CN102130158B Step-like groove-grid high electron mobility transistor
07/25/2012CN102122670B Groove-interconnected wafer level MOSFET encapsulation structure and implementation method
07/25/2012CN102117833B Comb-shaped gate composite source MOS (Metal Oxide Semiconductor) transistor and manufacturing method thereof
07/25/2012CN102110625B Method for detecting pinhole type growth defect
07/25/2012CN102110594B Method for performing low-temperature metal bonding on GaAs and Si
07/25/2012CN102110583B Method for cleaning PETEOS deposition equipment
07/25/2012CN102108505B Method for directly depositing metal line patterns based on screen printing method
07/25/2012CN102097287B Method for monitoring chip groove depth and wafer
07/25/2012CN102088035B Trench MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) side wall structure and manufacturing method thereof
07/25/2012CN102082074B Film laminating device for saving adhesive film
07/25/2012CN102074516B Semiconductor device packages and methods for manufacturing the same
07/25/2012CN102074473B Corrosion method for polycrystalline silicon layer
07/25/2012CN102064096B Preparation method of hair line
07/25/2012CN102054814B Non-core layer package substrate and manufacturing method thereof
07/25/2012CN102054699B Method for improving junction depth property of semiconductor device
07/25/2012CN102054692B 薄膜晶体管及其制造方法 A thin film transistor and its manufacturing method
07/25/2012CN102034704B Method for improving etching selection ratio of etched hard mask oxidation layer to etched silicon nitride layer
07/25/2012CN102024883B Preparation method of light-emitting diode radiating substrate
07/25/2012CN102024782B Three-dimensional vertical interconnecting structure and manufacturing method thereof
07/25/2012CN102024767B Wafer edge film structure and formation method thereof
07/25/2012CN102024745B Method for improving uniformity of contact resistance
07/25/2012CN102024703B Doping method
07/25/2012CN102024669B Method for reducing reflection power in plasma etching
07/25/2012CN102021514B Plasma device and manufacturing method of nano-crystalline silicon thin film