Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
07/2012
07/25/2012CN102612575A Single-crystal sapphire for producing single-crystal sapphire substrate for LED, single-crystal sapphire substrate for LED, luminescent element, and processes for producing these
07/25/2012CN102612501A Sputtering target and thin film transistor equipped with same
07/25/2012CN102612424A Mold manufacture method and mold formed by said method
07/25/2012CN102612253A Interconnection structure, apparatus therewith, circuit structure therewith
07/25/2012CN102610721A Light emitting device processes
07/25/2012CN102610709A Package carrier and manufacturing method thereof
07/25/2012CN102610707A Method for manufacturing semiconductor device for relieving stress of indium-gallium-aluminum-nitrogen thin film
07/25/2012CN102610705A Preparation method of gallium nitride substrate
07/25/2012CN102610701A Graphite boat being convenient to dismantle and assemble
07/25/2012CN102610698A Conveying carrier plate for manufacturing process of solar silicon wafers
07/25/2012CN102610693A Processing method for faulted solar cells
07/25/2012CN102610659A Voltage control variodenser and manufacturing method thereof
07/25/2012CN102610657A Clamping diode structure and manufacturing method thereof
07/25/2012CN102610655A Device with improved BE-SONOS structure and method for forming the same
07/25/2012CN102610654A Device with conical energy band silicon nitride layer SONOS (silicon oxide nitride oxide semiconductor) structure and high erasing speed
07/25/2012CN102610653A Nanocrystalline floating gate memory and manufacturing method of nanocrystalline floating gate memory
07/25/2012CN102610652A Metal oxide semiconductor structure and manufacturing method thereof
07/25/2012CN102610650A Polycrystalline thin film transistor
07/25/2012CN102610647A Tunneling transistor with hetero-material grid dielectrics and forming method of tunneling transistor
07/25/2012CN102610646A Side wall cavity layer structure of semiconductor device and method for preparing side wall cavity layer structure
07/25/2012CN102610644A SOI (silicon on insulator) device for restraining current leakage of back gate arising from radiation and preparation method thereof
07/25/2012CN102610642A Non-uniform channel junction-less transistor
07/25/2012CN102610641A High-voltage LDMOS (laterally diffused metal oxide semiconductor) device and manufacturing method thereof
07/25/2012CN102610638A SiC-bipolar junction transistor (SiC-BJT) device for power integrated circuit and manufacturing method of SiC-BJT device
07/25/2012CN102610637A Method of manufacturing strained source/drain structures
07/25/2012CN102610636A Vertical semiconductor device and method for making the same
07/25/2012CN102610635A High-density graded field limiting ring structure and manufacturing process thereof
07/25/2012CN102610634A Semiconductor device and method of manufacturing semiconductor device
07/25/2012CN102610633A Multilayer film structure for preparing polycrystalline silicon thin film
07/25/2012CN102610629A Semiconductor structure
07/25/2012CN102610628A Flat panel display device and method of manufacturing the same
07/25/2012CN102610618A 薄膜晶体管阵列面板 The thin film transistor array panel
07/25/2012CN102610617A Multi-bit SONOS (silicon-oxide-nitride-oxide-silicon) flash memory unit, multi-bit SONOS (silicon-oxide-nitride-oxide-silicon) flash memoryarray and operation method
07/25/2012CN102610616A Low cost scalable 3d memory
07/25/2012CN102610614A Multilayer connection structure and making method
07/25/2012CN102610612A Vertical channel transistor array and manufacturing method thereof
07/25/2012CN102610611A Semiconductor device and manufacturing method thereof
07/25/2012CN102610610A IC In-process Solution to Reduce Thermal Neutrons Soft Error Rate
07/25/2012CN102610609A Bimetal-oxide semiconductor field effect transistor integrated with capacitor
07/25/2012CN102610608A Metal-oxide semiconductor field effect transistor integrated with capacitor
07/25/2012CN102610605A 显示器件及其制造方法 A display device and manufacturing method thereof
07/25/2012CN102610604A Integrated device with defined heat flow
07/25/2012CN102610596A Method for incorporating existing silicon die into 3d integrated stack
07/25/2012CN102610595A Radio-frequency power amplifier multichip module and generation method thereof
07/25/2012CN102610590A EMI shielding in a package module
07/25/2012CN102610588A Semiconductor device and method of manufacture thereof
07/25/2012CN102610587A Buffering element and bonding method for flip-chip soft film using the same
07/25/2012CN102610585A Lead frame for silicon chip encapsulation, encapsulation method and formed electronic element
07/25/2012CN102610582A Semiconductor element provided with shield conduction column and method for manufacturing the same
07/25/2012CN102610581A Electronic component mounting means
07/25/2012CN102610579A Base plate structure for manufacturing semiconductor device and manufacturing method thereof
07/25/2012CN102610577A Method of manufacturing a package for embedding one ore more electronic components
07/25/2012CN102610576A Multi-layer single crystal 3D stackable memory and manufacturing method thereof
07/25/2012CN102610575A Method for manufacturing separated gate electrode type flash memory unit
07/25/2012CN102610574A Method for improving reading redundancy rate of static random access memory
07/25/2012CN102610573A Method for improving readout redundancy of static random access memory
07/25/2012CN102610572A Preparation method of dual-layer semiconductor apparatus with semi-cavity structure
07/25/2012CN102610571A Method for forming double-stress etching barrier layer and front metal dielectric layers
07/25/2012CN102610570A Method for forming front metal dielectric layer
07/25/2012CN102610569A Method for forming pre-metal dielectric layer
07/25/2012CN102610568A Trench poly esd formation for trench mos and sgt
07/25/2012CN102610567A Method for producing double-layer semiconductor device
07/25/2012CN102610566A Semiconductor device, and manufacturing method and manufacturing apparatus of the same
07/25/2012CN102610565A Method of manufacturing an electro-optical device
07/25/2012CN102610564A Method for manufacturing TFT array substrate
07/25/2012CN102610563A Method for preparing copper dual damascene structure
07/25/2012CN102610562A Method for removing carbon element in carbon-contained thin film and regenerating method of SiOC control baffle plate
07/25/2012CN102610561A Method for improving uniformity of heights of contact holes
07/25/2012CN102610560A Method for modifying appearances of side walls of through holes
07/25/2012CN102610559A Method for removing crystal on surface of fluorosiloxane glass
07/25/2012CN102610558A Method for forming front metal dielectric layer
07/25/2012CN102610557A Surface coating method, semiconductor device, and circuit board package
07/25/2012CN102610556A Method for reducing cracking phenomenon of double-layer front metal dielectric layer
07/25/2012CN102610555A Nitrogen-free silicon carbide thin film technology for preventing photoresist from being modified
07/25/2012CN102610554A Method for improving isolation and filling characteristics of high aspect ratio shallow trench
07/25/2012CN102610553A Preparation method for Ge-on-insulator substrate
07/25/2012CN102610552A Method for improving STI (shallow trench isolation) characteristic by aid of metal hard mask
07/25/2012CN102610551A Method for reducing shallow trench isolation defects
07/25/2012CN102610550A Loading table structure and processing device
07/25/2012CN102610549A Substrate processing apparatus and substrate processing method
07/25/2012CN102610548A Substrate exchange device
07/25/2012CN102610547A Front open type wafer box provided with inflatable support element module
07/25/2012CN102610546A Automatic sucking transfer device for solar cell strings after automatic welding
07/25/2012CN102610545A Short circuit defect passivation method and device for thin film photoelectronic device
07/25/2012CN102610544A System and method for producing devices including a semiconductor part and a non-semiconductor part
07/25/2012CN102610543A Variable-structure vacuum chamber for interior rarefied gas flow simulation verification and pressure detection
07/25/2012CN102610542A Processing device
07/25/2012CN102610541A Location method for defect points of integrated circuit
07/25/2012CN102610540A Rapid quality control board for surface-mounted diodes
07/25/2012CN102610539A Method for measuring junction temperature of multi-chip embedded packaged chip by using integrated pn junction
07/25/2012CN102610538A Method for rapidly elevating reliability of SONOS (silicon-oxide-nitride-oxide-silicon) by measuring tunneling electric field
07/25/2012CN102610537A Method for low-temperature solid bonding of semiconductor device
07/25/2012CN102610536A Method for forming top metal
07/25/2012CN102610535A Ball attachment device, solder ball picking method and solder ball mounting method
07/25/2012CN102610534A Stretchable RFID (Radio Frequency Identification) electronic tag and manufacturing method thereof
07/25/2012CN102610533A Injection molding system and method of chip package
07/25/2012CN102610532A Raw wafer grouting encapsulation technology
07/25/2012CN102610531A Method for preparing diamond-silicon composite package material
07/25/2012CN102610530A Method for producing silicon germanium channel P-channel metal oxide semiconductor (PMOS) with high germanium component
07/25/2012CN102610529A Preparation method of bulk silicon based three-dimensional array rear-grid SiNWFET (silicon nanowire field effect transistor)
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