Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/2013
02/14/2013WO2013022560A2 Memory cells
02/14/2013WO2013022530A1 Method and apparatus for selective nitridation process
02/14/2013WO2013022404A1 Leadframe manufacture
02/14/2013WO2013022306A2 Apparatus for plasma generation, method for manufacturing rotating electrodes for plasma generation apparatus, method for plasma treatment of substrate, and method for forming thin film of mixed structure using plasma
02/14/2013WO2013022162A1 Multiply-jointed robot
02/14/2013WO2013022128A1 Vapor deposition apparatus
02/14/2013WO2013022127A1 Mocvd apparatus
02/14/2013WO2013022122A1 Group 13 element nitride film and laminate thereof
02/14/2013WO2013022112A1 Slope and method of forming said slope
02/14/2013WO2013022099A1 Silicon-containing resist underlayer film-forming composition having sulfone structure
02/14/2013WO2013022096A1 Semiconductor block binding device, semiconductor block binding method, and semiconductor wafer manufacturing method
02/14/2013WO2013022066A1 Plasma processing device
02/14/2013WO2013022023A1 Particle monitor method and particle monitor device
02/14/2013WO2013021985A1 Alignment device and alignment mark for optical exposure device
02/14/2013WO2013021953A1 Condensed polycyclic aromatic compound, aromatic polymer, and method for synthesizing aromatic compound
02/14/2013WO2013021947A1 Epitaxial wafer manufacturing device and manufacturing method
02/14/2013WO2013021946A1 Composition for polishing compound semiconductor
02/14/2013WO2013021945A1 Adhesive composition for temporary fixing
02/14/2013WO2013021909A1 Epitaxial wafer manufacturing device and manufacturing method
02/14/2013WO2013021902A1 Substrate, semiconductor device, method for producing substrate, and method for manufacturing semiconductor device
02/14/2013WO2013021895A1 Conductive material and connection structure
02/14/2013WO2013021883A1 Liquid processing device
02/14/2013WO2013021869A1 Novel cyanic acid ester compound, method for producing same, curable resin composition containing novel cyanic acid ester compound, and cured product of curable resin composition
02/14/2013WO2013021847A1 Semiconductor device manufacturing method, semiconductor device, and jig for forming wiring
02/14/2013WO2013021822A1 Gan-based compound semiconductor device
02/14/2013WO2013021804A1 Method for peeling group 13 element nitride film
02/14/2013WO2013021786A1 Semiconductor device manufacturing method
02/14/2013WO2013021760A1 Organic transistor and method for manufacturing same
02/14/2013WO2013021727A1 Semiconductor device and method for manufacturing semiconductor device
02/14/2013WO2013021726A1 Semiconductor device and method for manufacturing semiconductor device
02/14/2013WO2013021722A1 Silicon carbide semiconductor device
02/14/2013WO2013021721A1 Silicon carbide semiconductor device
02/14/2013WO2013021705A1 Apparatus, method and program for manufacturing nitride film
02/14/2013WO2013021684A1 Power semiconductor device
02/14/2013WO2013021645A1 End-effector device and substrate transport robot provided with said end-effector device
02/14/2013WO2013021644A1 Semiconductor device manufacturing method and film used therein for protecting surface of semiconductor
02/14/2013WO2013021641A1 Imprint apparatus and article manufacturing method
02/14/2013WO2013021636A1 Silicon carbide semiconductor device and method for manufacturing same
02/14/2013WO2013021632A1 Thin-film transistor
02/14/2013WO2013021628A1 Semiconductor device
02/14/2013WO2013021614A1 Piezoelectric element
02/14/2013WO2013021606A1 Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same
02/14/2013WO2013021599A1 Film-forming apparatus and film-forming method
02/14/2013WO2013021567A1 Bonding method for metal, and metal bonded structure
02/14/2013WO2013021564A1 Photoelectric conversion element manufacturing method
02/14/2013WO2013021454A1 Heat treatment device
02/14/2013WO2013021255A1 Methods of forming bonded semiconductor structures in 3d integration processes using recoverable substrates, and bonded semiconductor structures formed by such methods
02/14/2013WO2013021251A1 Methods of forming bonded semiconductor structures including interconnect layers having one or more of electrical, optical, and fluidic interconnects therein, and bonded semiconductor structures formed using such methods
02/14/2013WO2013021007A1 Method for connecting components and composite structure
02/14/2013WO2013020868A1 Method for forming patterns of differently doped regions
02/14/2013WO2013020867A1 Methods for the fabrication of back contacted photovoltaic cells
02/14/2013WO2013020476A1 Semiconductor device and method for preparing same
02/14/2013WO2013020474A1 Nor flash device manufacturing method
02/14/2013WO2013020473A1 Post-development photoresist layer alignment and detection method
02/14/2013WO2013020472A1 Ldmos component and manufacturing method therefor
02/14/2013WO2013020471A1 Bipolar junction transistor and method for manufacturing bipolar and complementary metal-oxide-semiconductor hybrid structure
02/14/2013WO2013020470A1 Semiconductor device and method for manufacturing same
02/14/2013WO2013020423A1 Manufacturing apparatus and manufacturing method for quantum dot material
02/14/2013WO2013020322A1 Method for manufacturing thin film transistor matrix substrate and display panel
02/14/2013WO2013020255A1 Semiconductor device and manufacturing method thereof
02/14/2013WO2012148085A9 Antimony amino alkoxide compound and method for preparing same, and method for forming a thin film containing antimony using the antimony amino alkoxide compound and an atomic layer deposition technique
02/14/2013US20130041170 Alkyl-substituted allyl carbonyl metal complexes and use thereof for preparing dielectric thin films
02/14/2013US20130040466 Laser processing method
02/14/2013US20130040465 Etch-Back Method for Planarization at the Position-Near-Interface of an Interlayer Dielectric
02/14/2013US20130040464 Method of patterning a low-k dielectric film
02/14/2013US20130040463 Method and apparatus for manufacturing semiconductor device
02/14/2013US20130040462 Method of fabricating a semiconductor device
02/14/2013US20130040461 Polishing composition and polishing method
02/14/2013US20130040460 Methods for atomic layer deposition
02/14/2013US20130040459 Substrate wiring method and semiconductor manufacturing device
02/14/2013US20130040458 Apparatus and method for conformal mask manufacturing
02/14/2013US20130040457 Power mosfet contact metallization
02/14/2013US20130040456 Method of manufacturing semiconductor device
02/14/2013US20130040455 High temperature anneal for stress modulation
02/14/2013US20130040454 Annealing Copper Interconnects
02/14/2013US20130040453 Through Silicon Via Layout
02/14/2013US20130040452 Methods of Forming Semiconductor Devices Having Narrow Conductive Line Patterns
02/14/2013US20130040451 Method for permanent connection of two metal surfaces
02/14/2013US20130040450 Methods of Forming a Dielectric Cap Layer on a Metal Gate Structure
02/14/2013US20130040449 Ultraviolet energy shield for non-volatile charge storage memory
02/14/2013US20130040448 Methods of forming metal or metal nitride patterns and methods of manufacturing semiconductor devices
02/14/2013US20130040447 Conformal doping via plasma activated atomic layer deposition and conformal film deposition
02/14/2013US20130040446 Backside Surface Treatment of Semiconductor Chips
02/14/2013US20130040445 Method of manufacturing semiconductor device
02/14/2013US20130040444 Method and apparatus for selective nitridation process
02/14/2013US20130040443 Method for Manufacturing a Semiconductor Device
02/14/2013US20130040442 METHOD OF MANUFACTURING GaN-BASED FILM
02/14/2013US20130040441 Vapor-phase growth method for semiconductor film
02/14/2013US20130040440 EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2
02/14/2013US20130040439 Method of modifying electrical properties of carbon nanotubes using nanoparticles
02/14/2013US20130040438 EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2
02/14/2013US20130040437 Method of Manufacturing Composite Substrate
02/14/2013US20130040436 Through substrate via with embedded decoupling capacitor
02/14/2013US20130040435 Method for manufacturing transistor and semiconductor device
02/14/2013US20130040434 Semiconductor device and method of producing the same
02/14/2013US20130040433 Semiconductor Structures Employing Strained Material Layers with Defined Impurity Gradients and Methods for Fabricating Same
02/14/2013US20130040432 Methods of manufacturing lateral diffused mos devices with layout controlled body curvature and related devices
02/14/2013US20130040431 InP-Based Transistor Fabrication
02/14/2013US20130040430 Formation of a channel semiconductor alloy by forming a nitride based hard mask layer
02/14/2013US20130040429 Methods of forming charge storage structures including etching diffused regions to form recesses
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