Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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12/19/1990 | EP0402556A1 A method for improving the flatness of etched mirror facets |
12/19/1990 | EP0402520A2 Automatic wafer adhering device |
12/19/1990 | EP0402490A1 Measuring-probe manipulator for a wafer-testing device |
12/19/1990 | EP0402482A1 Method of forming pattern |
12/19/1990 | EP0402368A1 Cvd process for depositing a layer on an electrically conductive thin-layer structure. |
12/19/1990 | EP0260321B1 Method for the examination of electrically active impurities of semiconductor materials or structures and measuring arrangement for carrying out the method |
12/19/1990 | CN1047940A Three-d magnetic-vector sensor and its production method |
12/19/1990 | CN1047939A Method for improving adhesion of plastic encapsulant to copper containing leadframes |
12/19/1990 | CN1047894A Apparatus for manufacturing single silicon crystal |
12/19/1990 | CN1010908B Mfg. process for common-grounded packaging semiconductor device |
12/19/1990 | CN1010907B Defect control technology of silicon wafer for cmos device |
12/19/1990 | CN1010906B Technology for preparing electrode of gallium phosphide led |
12/18/1990 | US4979172 Microcomputer |
12/18/1990 | US4979149 Non-volatile memory device including a micro-mechanical storage element |
12/18/1990 | US4979146 Electrically erasable non-volatile semiconductor device |
12/18/1990 | US4979134 Method for measuring surface temperature of semiconductor wafer substrate, and heat-treating apparatus |
12/18/1990 | US4979018 Semiconductor device with parallel multiplier using at least three wiring layers |
12/18/1990 | US4979015 Insulated substrate for flip-chip integrated circuit device |
12/18/1990 | US4979014 MOS transistor |
12/18/1990 | US4979013 Semiconductor memory device |
12/18/1990 | US4979012 Semiconductor device with bonding pad contacts |
12/18/1990 | US4979010 VLSI self-aligned bipolar transistor |
12/18/1990 | US4979009 Heterojunction bipolar transistor |
12/18/1990 | US4979008 Vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components |
12/18/1990 | US4979005 Floating-gate memory cell with tailored doping profile |
12/18/1990 | US4979003 Nonalloyed ohmic source-drain contacts from channel layer coated with contact mediating lanthanide-arsenide and a gallium-aresenide layer on which nickel is vaporized |
12/18/1990 | US4979001 Hidden zener diode structure in configurable integrated circuit |
12/18/1990 | US4978908 Scanning electron microscope based parametric testing method and apparatus |
12/18/1990 | US4978867 Integrated circuit with on-chip voltage converter |
12/18/1990 | US4978835 Method of clamping electrical contacts for laser bonding |
12/18/1990 | US4978830 Laser trimming system for semiconductor integrated circuit chip packages |
12/18/1990 | US4978712 Partially curing a liquid adhesive involving crosslinking and/or imidation by heating at a controlled temperature below the glass transition temperature |
12/18/1990 | US4978639 Exposing the plating by removing a portion of the back surface thus separating individual chips |
12/18/1990 | US4978637 Patterning multilayers of a metal conductor and polycrystal-line silicon; simplification |
12/18/1990 | US4978636 Method of making a semiconductor diode |
12/18/1990 | US4978635 Method of making a semiconductor memory device |
12/18/1990 | US4978634 Method of making trench DRAM cell with stacked capacitor and buried lateral contact |
12/18/1990 | US4978631 Current source with a process selectable temperature coefficient |
12/18/1990 | US4978630 Fabrication method of bipolar transistor |
12/18/1990 | US4978629 Double diffusion structure with high concentration and low concentration impurity regions |
12/18/1990 | US4978628 Drail-well/extension high voltage MOS transistor structure and method of fabrication |
12/18/1990 | US4978627 Method of detecting the width of lightly doped drain regions |
12/18/1990 | US4978626 LDD transistor process having doping sensitive endpoint etching |
12/18/1990 | US4978594 Fluorine-containing base layer for multi-layer resist processes |
12/18/1990 | US4978574 Formation of organic membranes |
12/18/1990 | US4978567 Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same |
12/18/1990 | US4978421 Masking one side of a wafer, removal of undoped silicon to expose doped silicon membrane on the opposite side |
12/18/1990 | US4978420 Single chamber via etch through a dual-layer dielectric |
12/18/1990 | US4978419 Process for defining vias through silicon nitride and polyamide |
12/18/1990 | US4978418 Using ions having different ion energies |
12/18/1990 | US4978412 Plasma processing device |
12/18/1990 | US4978379 Flame hydrolysis with oxyhydrogen flame; spray depositing glass particles; sintering |
12/18/1990 | US4978052 Semiconductor die attach system |
12/18/1990 | US4978050 For a wire bonder |
12/18/1990 | US4977855 Apparatus for forming film with surface reaction |
12/18/1990 | US4977688 Vapor device and method for drying articles such as semiconductor wafers with substances such as isopropyl alcohol |
12/13/1990 | WO1990015517A1 Improved electrical connectors and ic chip tester embodying same |
12/13/1990 | WO1990015446A1 Guard ring structure |
12/13/1990 | WO1990015444A1 Semiconductor device |
12/13/1990 | WO1990015442A1 Low voltage triggered snap-back device |
12/13/1990 | WO1990015440A1 Overvoltage protective circuit for mos components |
12/13/1990 | WO1990015439A1 Packaged electronic circuit with a chip on a gridded area of conductive pads |
12/13/1990 | WO1990015436A1 Method of producing compound semiconductor devices |
12/13/1990 | WO1990015414A1 Nvram with integrated sram and nv circuit |
12/13/1990 | WO1990015363A1 Resin composition sensitive to uv radiation and to electrons |
12/13/1990 | WO1990015340A1 Process and device for rapid spectral analysis of a signal at one or more measurement points |
12/13/1990 | WO1990015070A1 Very large scale immobilized peptide synthesis |
12/13/1990 | WO1990013687A3 Apparatus and method for treating flat substrates under reduced pressure |
12/13/1990 | WO1990012769A3 Heat-sink structures with increased heat dissipation capacity and methods for the production of such structures |
12/13/1990 | CA2391491A1 Very large scale immobilized peptide synthesis |
12/12/1990 | EP0402296A1 Field-effect-transistor with asymmetrical structure |
12/12/1990 | EP0402230A1 Process and device for marking and cleaving mono-crystalline semiconductor wafers |
12/12/1990 | EP0402209A1 Semiconductor device having an epitaxial layer grown heteroepitaxially on an underlying substrate |
12/12/1990 | EP0402141A1 Hydroxy-resinous binder materials containing bound azo photosensitizer, method and use |
12/12/1990 | EP0402136A2 Semiconductor device having multiple epitaxial layers |
12/12/1990 | EP0402125A2 Electron beam exposure apparatus |
12/12/1990 | EP0402061A2 Metallization process |
12/12/1990 | EP0401848A2 Tape carrier and test method therefor |
12/12/1990 | EP0401792A2 Semiconductor memory device |
12/12/1990 | EP0401786A2 Method of manufacturing a lateral bipolar transistor |
12/12/1990 | EP0401746A2 Method for encapsulating an electronic device and apparatus for carrying out this method |
12/12/1990 | EP0401716A2 High voltage complementary NPN/PNP process |
12/12/1990 | EP0401688A2 Method of forming electrical contact between interconnection layers located at different layer levels |
12/12/1990 | EP0401687A2 Placement optimizing method/apparatus and apparatus for designing semiconductor devices |
12/12/1990 | EP0401686A2 Semiconductor memory cell having high density structure |
12/12/1990 | EP0401679A2 Process and apparatus for electrostatically applying a liquid layer on a substrate and for drying the liquid layer on the substrate |
12/12/1990 | EP0401622A1 Target cooling procedure and device for cooling targets |
12/12/1990 | EP0401586A2 Method for fabricating semiconductor device including package |
12/12/1990 | EP0401577A1 Metal oxide-semiconductor device and fabrication method of the same |
12/12/1990 | EP0401537A2 High density dynamic ram cell |
12/12/1990 | EP0401499A1 Photoresist with copolymer binder |
12/12/1990 | EP0401473A2 Method of low defect junction and isolation formation in semiconductor material |
12/12/1990 | EP0401440A1 Monolithic silicon integrated circuit chip for a thermal ink jet printer |
12/12/1990 | EP0401387A1 Process for producing single crystal |
12/12/1990 | EP0401354A1 Semiconductor device comprising an integrated circuit having a vertical transistor. |
12/12/1990 | EP0401211A1 Semiconductor component, manufacturing process, device and assembly station. |
12/12/1990 | CN1047758A High-voltage silicon transistor with low-resistance film as substrate |
12/11/1990 | US4977476 Semiconductor switch |
12/11/1990 | US4977442 Lead frame and method of producing electronic components using such improved lead frame |
12/11/1990 | US4977441 Semiconductor device and tape carrier |