Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/1990
10/31/1990EP0395017A2 Plasma etching method
10/31/1990EP0394987A2 Compositions
10/31/1990EP0394932A2 Photothermal inspection method, arrangement for its working out, and utilisation of the method
10/31/1990EP0394878A2 Semiconductor device having multi-layered wiring structure
10/31/1990EP0394826A2 Liquid crystal epitaxial growing method and apparatus therefor
10/31/1990EP0394767A2 Dielectric for planarization
10/31/1990EP0394757A2 Method for fabrication of active semiconductor structures using basic structures with surface-parallel 2D-charge carrier layer
10/31/1990EP0394741A2 Deep UV etch resistant system
10/31/1990EP0394740A2 Dry development resist system
10/31/1990EP0394722A2 Multilevel metallization for VLSI and method for forming the same
10/31/1990EP0394665A1 Selective deposition of amorphous and polycrystalline silicon
10/31/1990EP0394658A1 Process for manufacturing thin, resistant coatings
10/31/1990EP0394638A2 Method of etching polyimides and resulting passivation structures
10/31/1990EP0394598A1 An improved gate array cell having FETS of different and optimized sizes
10/31/1990EP0394597A1 Follow-up System for Monitoring the Etching Process in an RIE Equipment and its Application to Producing High-resolution and Reproducible Patterns
10/31/1990EP0394590A2 Field effect transistors and method of making a field effect transistor
10/31/1990EP0394462A1 Method of forming a semiconductor thin film and apparatus therefor
10/31/1990EP0394353A1 Aqueous developing solution and its use in developing positive-working photoresist composition
10/31/1990DE4013143A1 Selective CVD on silicon surface - esp. for forming titanium silicide layer
10/31/1990DE4011485A1 Measuring temp. during coupler welding to solar cell - irradiating solar cell with light, measuring idle voltage, and deriving solar cell temp.
10/31/1990DE3914015A1 Bonding single crystal silicon components - using screen printed glass-solder film
10/31/1990DE3914005A1 Metallising semiconductor - by metal sublimation e.g. to form recombination centres within semiconductor
10/30/1990US4967396 Semiconductor integrated circuit device
10/30/1990US4967393 Flash erasable and programmable nonvolatile semiconductor memory
10/30/1990US4967326 Communicating data between processes in an array of computers
10/30/1990US4967313 Electronic circuit and method of production thereof
10/30/1990US4967259 Wafer having a dicing area having a step region covered with a conductive layer and method of manufacturing the same
10/30/1990US4967257 Semiconductor device having field effect transistors
10/30/1990US4967253 Bipolar transistor integrated circuit technology
10/30/1990US4967252 Compound semiconductor bipolar device with side wall contact
10/30/1990US4967248 Structure of semiconductor memory cell with trench-type capacitor
10/30/1990US4967247 Vertical dynamic random access memory
10/30/1990US4967246 Structure of insulated gate bipolar transistors
10/30/1990US4967245 Trench power MOSFET device
10/30/1990US4967242 Heterojunction field effect transistor
10/30/1990US4967229 Process for forming dicing lines on wafer
10/30/1990US4967110 Master-slice type integrated circuit including macrocells associated with delay circuit
10/30/1990US4967088 Method and apparatus for image alignment in ion lithography
10/30/1990US4967075 Velocity monitoring method and apparatus
10/30/1990US4967069 Spherical photoelectric sensor
10/30/1990US4966870 Method for making borderless contacts
10/30/1990US4966869 Reducing tungsten hexafluoride with mixture of dichlorosilane and disilane
10/30/1990US4966868 Doping polysilicon, coating with undoped silicon and refractory metal, heating
10/30/1990US4966867 Tapered spacers of dielectric material
10/30/1990US4966866 Diffusion dope of opersite conductivity, overcoating with dielectric
10/30/1990US4966865 Forming silicide, depositing dielectric, plasma etching
10/30/1990US4966864 Applying dielectric,then polycrystalline silicon; etching
10/30/1990US4966861 Using silicon hydride gas
10/30/1990US4966860 Process for producing a SiC semiconductor device
10/30/1990US4966859 Voltage-stable sub-μm MOS transistor for VLSI circuits
10/30/1990US4966858 Method of fabricating a lateral semiconductor structure including field plates for self-alignment
10/30/1990US4966743 From dialdehyde and diamine
10/30/1990US4966669 For metallization of semiconductors
10/30/1990US4966664 Electrolysis in a basic bath where the substrate with resist functions as electrode
10/30/1990US4966663 Method for forming a silicon membrane with controlled stress
10/30/1990US4966646 Method of making an integrated, microminiature electric-to-fluidic valve
10/30/1990US4966645 Crystal growth method and apparatus
10/30/1990US4966549 Wafer hanger useful for thermally treating semiconductor wafers
10/30/1990US4966519 Integrated circuit processing system
10/30/1990US4966428 Manufacture of integrated circuits using holographic techniques
10/30/1990US4966284 Substrate package
10/30/1990US4966095 Apparatus for forming a thin film
10/30/1990US4966094 Surface treatment method and apparatus therefor
10/30/1990CA1275742C Ion beam implanter scan control system
10/30/1990CA1275741C Flowing gas seal enclosure for processing workpiece surface with controlled gasenvironment and intense laser irradiation
10/30/1990CA1275613C Etching method
10/26/1990CA2015307A1 Method for making patterned thin film
10/25/1990DE4012681A1 Integrierte schaltungsanordung Integrated circuit arrangement
10/25/1990DE3913123A1 Generation of recombination centres in semiconductor devices - by electron beam irradiation then stabilisation in medium temp. anneal after metallisation
10/25/1990DE3912996A1 Region with low carrier lifetime in semiconductor devices - uses interstitial diffusion of foreign atoms then generation of vacancies into which atoms diffuse
10/25/1990CA2015383A1 Method of and apparatus for applying voltage to electrostatic chuck
10/24/1990EP0394092A1 process for making a self-aligned transistor
10/24/1990EP0394054A1 Method of manufacturing siliconboron nitride film having excellent step coverage characteristic
10/24/1990EP0393997A2 Method of providing a variable-pitch leadframe assembly
10/24/1990EP0393951A2 Semiconductor silicon wafer and manufacturing method thereof
10/24/1990EP0393949A1 Power field effect devices having small cell size and low contact resistance and method of fabrication
10/24/1990EP0393924A2 Devices having asymmetric delta-doping
10/24/1990EP0393897A1 Process for the manufacture of electronic and optical devices
10/24/1990EP0393869A1 Process for forming deposition film
10/24/1990EP0393851A1 A method of manufacturing a non-linear resistive element array
10/24/1990EP0393809A2 Pressure resistant thermal reactor system for semiconductor processing
10/24/1990EP0393799A2 Vapor deposited photoresists of anionically polymerizable monomers
10/24/1990EP0393775A1 Apparatus for projecting a mask pattern on a substrate
10/24/1990EP0393737A2 Electrically-programmable semiconductor memories
10/24/1990EP0393682A2 Semiconductor integrated circuit device
10/24/1990EP0393671A2 Hybrid integrated circuit device
10/24/1990EP0393657A2 Hybrid integrated circuit device
10/24/1990EP0393637A1 Plasma processing method
10/24/1990EP0393635A2 Semiconductor device having multi-level wirings
10/24/1990EP0393600A2 Apparatus containing an effusion cell crucible for molecular beam epitaxy equipment
10/24/1990EP0393416A1 Low softening point metallic oxide glasses suitable for use in electronic applications
10/24/1990EP0393348A2 Negative photoresist and use thereof
10/24/1990EP0393344A1 Targets supporting device for sputtering sources and procedure for maintaining a target in a support
10/24/1990EP0393317A2 Resonant tunneling semiconductor devices
10/24/1990EP0393220A1 Integrated circuit package
10/24/1990EP0393215A1 A preparation method of selective growth silicon layer doped with impurities
10/24/1990EP0393162A1 Plasma-nitridated self-aligned tungsten system for vlsi interconnections
10/24/1990EP0256085B1 Process for forming cmos structures
10/24/1990EP0256030B1 Double layer photoresist process for well self-align and ion implantation masking
10/24/1990EP0230508B1 Structured semiconductor body
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