Patents
Patents for G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133)
03/2003
03/06/2003US20030043651 Semiconductor storage device and setting method thereof
03/06/2003US20030043649 Small anti-fuse circuit to facilitate parallel fuse blowing
03/05/2003EP1288957A2 Solid state memory
03/05/2003CN1400605A Write pulse limitation for one-write-many-read memory device
03/04/2003US6529431 Rapid equalizing ground line and sense circuit
03/04/2003US6529038 Antifuse programming method
03/04/2003US6528815 Write-once read-many electrical memory element of a conjugated polymer or oligomer
02/2003
02/27/2003WO2003017427A2 Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
02/26/2003EP1286357A1 Thin film transistor memory device
02/26/2003EP1286356A2 One-time programmable memory
02/26/2003CN1399282A Programmable address logic for diode-based solid memory
02/26/2003CN1399275A Parallel access of cross point diode memory array
02/26/2003CN1399274A Pulse train write of one-write-many-read memory device
02/26/2003CN1102291C Semiconductor memory device and data writing method thereof
02/25/2003US6525982 Methods of programming and circuitry for a programmable element
02/25/2003US6525960 Nonvolatile semiconductor memory device including correction of erratic memory cell data
02/25/2003US6525955 Memory cell with fuse element
02/25/2003US6525953 Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
02/20/2003WO2003015104A1 Zero static power fuse cell for integrated circuits
02/20/2003US20030036223 Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
02/20/2003US20030035337 High density mask ROM having flat-type bank select
02/19/2003CN1398003A Rom
02/19/2003CN1397952A Addressing and reading crossover point diode storage array
02/18/2003US6523132 Flash EEprom system
02/18/2003US6522595 Methods for forming and programming aligned fuses disposed in an integrated circuit
02/18/2003US6522594 Memory array incorporating noise detection line
02/13/2003WO2002069346A3 Non-volatile memory with improved programming and method therefor
02/13/2003US20030031075 Semiconductor integrated circuit device and method of manufacturing thereof
02/13/2003US20030031074 One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells
02/13/2003US20030031067 Method for making a three-dimensional memory array incorporating serial chain diode stack
02/13/2003US20030031047 One-time programmable unit memory cell based on vertically oriented fuse and diode and one-time programmable memory using the same
02/13/2003US20030030074 TFT mask ROM and method for making same
02/06/2003US20030028734 Memory devices and methods for use therewith
02/06/2003US20030028717 Memory devices and methods for use therewith
02/06/2003US20030027378 Method for programming a threedimensional memory array incorporating serial chain diode stack
02/06/2003US20030026158 Anti-fuse memory cell with asymmetric breakdown voltage
02/06/2003US20030026157 Anti-fuse memory cell with asymmetric breakdown voltage
02/06/2003US20030026121 Vertically stacked field programmable nonvolatile memory and method of fabrication
02/06/2003US20030026120 Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics
02/05/2003EP1282136A1 Method and apparatus for writing memory cells
02/05/2003EP1281204A1 One-time uv-programmable non-volatile semiconductor memory and method of programming such a semiconductor memory
02/05/2003CN1395252A Method for reducing interconnecting number of portable, cheap and ruggedized memory modules
02/04/2003US6515898 Memory element, method for structuring a surface, and storage device
02/04/2003US6515888 Low cost three-dimensional memory array
01/2003
01/30/2003US20030023945 Metal interconnection read only memory cell
01/30/2003US20030023828 Memory devices and methods for use therewith
01/30/2003US20030023821 Memory devices and methods for use therewith
01/30/2003US20030023820 Memory devices and methods for use therewith
01/30/2003US20030022420 Three-dimensional memory array incorporating serial chain diode stack
01/30/2003US20030021176 Programmable address logic for solid state diode-based memory
01/30/2003US20030021148 Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics
01/30/2003US20030021147 Optically programmable address logic for solid state diode-based memory
01/30/2003US20030021142 Memory cell with antifuse layer formed at diode junction
01/29/2003CN1393932A Semiconductor chip with fuse element
01/28/2003US6512698 Semiconductor device
01/28/2003US6512692 Nonvolatile semiconductor storage device and test method therefor
01/23/2003WO2003007309A1 Zero static power fuse cell for integrated circuits
01/23/2003WO2003007308A1 Zero static power programmable fuse cell for integrated circuits
01/23/2003WO2003007307A1 Zero static power programmable fuse cell for integrated circuits
01/23/2003US20030018871 Memory devices and methods for use therewith
01/23/2003US20030016574 Method of adjusting semiconductor buffer capability of semiconductor device, electronic system, and semiconductor device
01/23/2003US20030016566 Semiconductor device, microcomputer and flash memory
01/23/2003US20030016553 Vertically stacked field programmable nonvolatile memory and method of fabrication
01/23/2003US20030016552 Read only memory
01/23/2003US20030016074 Zero static power programmable fuse cell for integrated circuits
01/22/2003EP1278203A1 Method and apparatus for writing a memory device
01/22/2003CN1392564A 非易失性存储器 Non-volatile memory
01/22/2003CN1099679C Multi-block erasing and identification device and method for non-volative semiconductor memory
01/16/2003US20030014721 Method for dividing ROM and DDFS using the same method
01/16/2003US20030014689 Flash EEprom system
01/16/2003US20030011953 Zero static power fuse cell for integrated circuits
01/16/2003US20030011379 Method for characterizing an active track and latch sense-amp (comparator) in a one time programmable (OTP) salicided poly fuse array
01/14/2003US6507887 Binary data memory design with data stored in low-power sense
01/14/2003US6507053 Highly reliable OTP device
01/14/2003US6507052 The number of reference cell blocks to be connected in series can be selected freely, allowing finer settings of a reference current value.
01/08/2003CN1389919A Cross-point diode storage array addressing mfg. technology
01/07/2003US6505324 Automated fuse blow software system
01/07/2003US6504773 Memory testing method and memory testing apparatus
01/07/2003US6504746 High-density low-cost read-only memory circuit
01/03/2003WO2002050839A3 Circuit arrangement for triggering a programmable connection
01/02/2003US20030001589 Redundant electric fuses
01/02/2003US20030001213 High density read only memory and fabrication method thereof
01/02/2003EP1271539A2 Memory device
12/2002
12/31/2002US6501667 Data writing system
12/27/2002WO2002103705A1 Method for characterizing an active track and latch sense-amp (comparator) in a one time programmable (otp) salicided poly fuse array
12/26/2002US20020197797 Non-volatile read only memory and its manufacturing method
12/26/2002US20020196694 Circuit for generating control signal using make-link type fuse
12/26/2002US20020196682 Memory device
12/26/2002US20020196659 Non-Volatile memory
12/26/2002US20020196652 Read only memory structure
12/26/2002US20020196053 Semiconductor integrated circuit and semiconductor logic circuit used in the integrated circuit
12/26/2002US20020195625 Semiconductor chip with fuse unit
12/24/2002US6498526 Fuse circuit and program status detecting method thereof
12/24/2002US6498066 Ultra-late programming ROM and method of manufacture
12/19/2002US20020192895 Fabrication techniques for addressing cross-point diode memory arrays
12/19/2002US20020192566 Photorefractive holographic recording media
12/19/2002US20020191469 Semiconductor device and method of the semiconductor device
12/19/2002US20020191468 Fuse circuit using anti-fuse and method for searching for failed address in semiconductor memory
12/19/2002US20020191434 Addressing and sensing a cross-point diode memory array
12/19/2002US20020191432 Read-only MOS memory
1 ... 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 ... 102