Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Patents for G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133)
12/2003
12/16/2003US6665226 Semiconductor integrated circuit device and method of manufacturing thereof
12/16/2003US6665207 ROM embedded DRAM with dielectric removal/short
12/11/2003WO2003015104A8 Zero static power fuse cell for integrated circuits
12/11/2003US20030229824 Device for semiconductor memory repair
12/11/2003US20030227792 Temperature compensated t-ram memory device and method
12/11/2003US20030227790 Temperature compensated T-RAM memory device and method
12/11/2003US20030227294 Programming circuit and method having extended duration programming capabilities
12/10/2003CN1130775C Medium voltage generating circuit and nonvolatile semiconductor memory containing same
12/10/2003CN1130731C Semiconductor read-only memory
12/09/2003US6662314 Microcomputer including program for rewriting data in an internal flash memory
12/09/2003US6661730 Partial selection of passive element memory cell sub-arrays for write operation
12/09/2003US6661704 Diode decoupled sensing method and apparatus
12/09/2003US6661693 Circuit for programming antifuse bits
12/04/2003US20030223302 Semiconductor device having semiconductor memory
12/04/2003US20030223291 Multi-bit programmable memory cell having multiple anti-fuse elements
12/04/2003US20030223270 Diode-and-fuse memory elements for a write-once memory comprising an anisotropic semiconductor sheet
12/04/2003US20030223260 Semiconductor device removing disconnection defect in fuse element of its program circuit to stably perform coincidence comparison operation
12/03/2003EP1367596A1 Cross-point diode ROM
12/03/2003CN1460268A Non-volatile memory with imprved programming and method therefor
12/03/2003CN1459865A Hood Curtain type read-only memory and its manufacturing method
12/03/2003CN1459860A 半导体器件 Semiconductor devices
12/03/2003CN1129915C Integrated logic circuit and EEP ROM
12/02/2003US6657905 Clamping circuit for the Vpop voltage used to program antifuses
12/02/2003US6657531 Fuse circuit using capacitors as fuse elements
11/2003
11/27/2003US20030218932 Semiconductor device
11/27/2003US20030218924 Method of programming memory cells by breaking down antifuse elements
11/27/2003US20030218922 Semiconductor memory device
11/27/2003US20030218493 Antifuse Circuit
11/27/2003US20030218492 Static, low-voltage fuse-based cell with high-voltage programming
11/27/2003US20030218487 Programmable latch array using antifuses
11/26/2003EP1365414A2 Addressing data storage memories
11/26/2003CN1458652A Address structure and method of multiple array data storage
11/25/2003US6654304 Poly fuse trim cell
11/25/2003US6654272 Flash cell fuse circuit
11/25/2003US6653711 Reducing fuse programming time for non-volatile storage of data
11/25/2003US6653692 Double access path mask ROM cell structure
11/20/2003WO2003096353A1 Method and apparatus for improving the reliability of the reading of integrated circuit fuses
11/20/2003US20030214863 Non-volatile read-only memory modifiable by redefinition of a metal or via level
11/20/2003US20030214846 Clamping circuit for the vpop voltage used to program antifuses
11/20/2003US20030214840 Computer systems, processes for forming a SRAM cell, processes for turning a SRAM cell off, processes for writing a SRAM cell and processes for reading data from a SRAM cell
11/20/2003US20030214834 Device that makes it possible to selectively use nonvolatile memory as RAM or ROM
11/20/2003US20030214828 Read-only memory with reduced loading value
11/20/2003DE10217710C1 Halbleiterschaltung mit Fuses und Ausleseverfahren für Fuses Semiconductor circuit with fuses and selection procedures for Fuses
11/18/2003US6651133 Method and data storage device for writing a minimum number of memory cells in a memory device
11/18/2003US6650579 Semiconductor device having test and read modes and protection such that ROM data reading is prevented in the test mode
11/18/2003US6650578 Semiconductor storage device and setting method thereof
11/18/2003US6650567 Nonvolatile semiconductor memories with a NAND logic cell structure
11/18/2003US6650447 Photopolymer core located between said first and second substrates and having a coefficient of thermal expansion such that said first and second substrates and said photopolymer core cooperate to respond substantially isotropically to a
11/13/2003WO2003094171A1 Molecular wire crossbar flash memory
11/13/2003WO2003083429A8 A novel highly-integrated flash memory and mask rom array architecture
11/13/2003WO2003067598A3 Reading circuit for reading a memory cell
11/13/2003US20030210568 Address structure and methods for multiple arrays of data storage memory
11/13/2003US20030210567 Intermesh memory device
11/12/2003EP1361583A1 Memory cell programming method by blowing antifuse elements
11/12/2003EP1361579A1 An intermesh memory device
11/12/2003EP0664046B1 Remotely re-programmable program memory for a microcontroller
11/11/2003US6647471 Methods for overwriting data in a memory device
11/11/2003US6646912 Non-volatile memory
11/11/2003CA2302014C A read-only memory and read-only memory devices
11/07/2003CA2424639A1 An intermesh memory device
11/06/2003US20030207570 Resistive memory for data storage devices
11/06/2003US20030206467 High density semiconductor memory cell and memory array using a single transistor
11/06/2003US20030206436 Molecular wire crossbar flash memory
11/06/2003US20030206429 Vertically stacked field programmable nonvolatile memory and method of fabrication
11/06/2003US20030205777 Integrated fuse with regions of different doping within the fuse neck
11/05/2003CN1453797A 半导体存储器 Semiconductor memory
11/05/2003CN1453796A Shaded ROM
11/05/2003CN1127090C Electronic test memory device
11/04/2003US6643213 Write pulse circuit for a magnetic memory
11/04/2003US6643193 Semiconductor device, microcomputer and flash memory
11/04/2003US6643180 Semiconductor memory device with test mode
11/04/2003US6643175 Nonvolatile semiconductor storage device and test method therefor
11/04/2003US6642603 Same conductivity type highly-doped regions for antifuse memory cell
11/04/2003US6642602 Self-terminating blow process of electrical anti-fuses
11/04/2003US6642587 High density, low power consumption and reduced size
11/04/2003US6642084 Methods for forming aligned fuses disposed in an integrated circuit
10/2003
10/30/2003US20030202404 Memory device with row and column decoder circuits arranged in a checkboard pattern under a plurality of memory arrays
10/30/2003US20030202398 High voltage switch circuitry
10/30/2003US20030202377 Flash EEprom system
10/30/2003US20030202376 High density semiconductor memory cell and memory array using a single transistor
10/30/2003US20030202374 Semiconductor memory device
10/29/2003EP1242997B1 Photorefractive holographic recording media
10/29/2003CN1452248A 存储器结构 Memory structure
10/29/2003CN1126103C Fuse circuit and redundant decoder
10/28/2003US6639852 Sensing apparatus for a ROM memory device
10/23/2003US20030198109 Semiconductor memory device with series-connected antifuse-components
10/23/2003US20030198107 Method of checking the state of a capacitor fuse in which the voltage applied to the capacitor fuse is the same level as voltage applied to memory cells
10/23/2003US20030198085 Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
10/23/2003US20030198074 Mask ROM
10/23/2003US20030197996 Bounce tolerant fuse trimming circuit with controlled timing
10/23/2003US20030197545 Semiconductor circuit and initialization method
10/22/2003EP1354359A1 System and method for one-time programmed memory
10/22/2003CN1450561A Non-volatile, multi-level memory device
10/22/2003CN1125466C Nonvolatile semiconductor memory
10/21/2003US6636450 Fuse read sequence for auto refresh power reduction
10/21/2003US6636434 Multibit memory point memory
10/21/2003US6636102 Polyfuse trim read cell
10/16/2003US20030196051 Method for managing data stored primarily in a read-only memory
10/16/2003US20030193826 Reusable sold-state one-time programmable read only memory
10/15/2003EP1353338A1 A memory device
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