Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
05/2011
05/10/2011US7940563 Nonvolatile storage device and bias control method thereof
05/10/2011US7940562 Non-volatile semiconductor memory device having non-selected word lines adjacent to selected word lines being charged at different timing for program disturb control
05/10/2011US7940561 Semiconductor device
05/10/2011US7940117 Voltage generation circuit and flash memory device including the same
05/10/2011US7939879 Semiconductor device
05/05/2011WO2011031398A3 Interruptible nand flash memory
05/05/2011US20110103155 Operation method of memory device
05/05/2011US20110103154 Local self-boosting method of flash memory device and program method using the same
05/05/2011US20110103153 Nonvolatile semiconductor memory device and method for driving same
05/05/2011US20110103152 Semiconductor memory device
05/05/2011US20110103151 Methods of Programming Semiconductor Memory Devices
05/05/2011US20110103150 Non-volatile memory with predictive programming
05/05/2011US20110103149 Nonvolatile semiconductor memory device and method for driving same
05/05/2011US20110103148 Normally off gallium nitride field effect transistors (FET)
05/05/2011US20110103147 Nand flash memory devices having wiring with integrally-formed contact pads and dummy lines and methods of manufacturing the same
05/05/2011US20110103146 Memory device of the electrically erasable and programmable type, having two cells per bit
05/05/2011US20110103145 M+n bit programming and m+l bit read for m bit memory cells
05/05/2011US20110103144 Structures and methods of trimming threshold voltage of a flash eeprom memory
05/05/2011US20110102636 Solid state memory with reduced number of partially filled pages
05/05/2011US20110101114 Memory System and Data Reading Method Thereof
05/05/2011DE112006000413B4 Nicht-flüchtige Speichervorrichtung mit abgeschrägtem Steuergateprofil und deren Herstellungsverfahren, dazugehörige Flashspeicher und Verfahren zum Speichern von Informationen in einer derartigen Speichervorrichtung Non-volatile memory device with bevelled control gate profile and their method of preparation, and procedures associated flash memory to store information in such a memory device
05/05/2011DE112004002678B4 Elektrisch programmierbares 2-Transistoren-Sicherungselement mit einfacher Polysiliziumschicht und elektrisch programmierbare Transistor-Sicherungszelle Electrically programmable 2-transistor fuse element with simple polysilicon layer and electrically programmable fuse transistor cell
05/04/2011EP2317520A1 Device for supplying a high voltage for deleting programmes with an integrated circuit
05/04/2011EP2317519A1 Integrated circuit including a non-dedicated terminal for receiving a high voltage for deleting programs
05/04/2011EP2317441A1 Flash memory architecture with separate storage of overhead and user data
05/04/2011EP1714291B1 Self-boosting system for flash memory cells
05/04/2011CN1959847B Phase change random access memory device having variable drive voltage circuit
05/04/2011CN102047341A Fatigue management system and method for hybrid nonvolatile solid state memory system
05/04/2011CN102047230A Hybrid memory management
05/04/2011CN102044553A Non-volatile memory device and method of manufacturing the same
05/04/2011CN102044302A Integrated circuit including a non-dedicated terminal for receiving a high voltage for deleting programs
05/04/2011CN102044301A Automatic mass burning device for automobile sunroof controller
05/04/2011CN102044300A Methods of operating a memory with differentiate data regions
05/04/2011CN102044299A Non-volatile memory and read circuit thereof
05/04/2011CN102044298A Memory device and method for performing source-side sensing to the same
05/04/2011CN102044297A Storage device and operation method thereof
05/04/2011CN102044296A Memory device with serial protocol and corresponding addressing method
05/04/2011CN102044295A Nonvolatile memory system and method for managing data thereof
05/04/2011CN102044294A Storage device and data communication system
05/04/2011CN102043979A Interface IC and memory card including the same
05/04/2011CN101359717B Resistor random access memory structure having a defined small area of electrical contact and its manufacture method
05/04/2011CN101299454B Method for preparing nano composite phase-changing material
05/04/2011CN101202111B Operating method for non-volatile flash memory
05/03/2011US7936610 Selective refresh of single bit memory cells
05/03/2011US7936609 Memory controller, memory system, recording and reproducing method for memory system, and recording apparatus
05/03/2011US7936607 Non-volatile memory
05/03/2011US7936603 Purge operations for solid-state storage devices
05/03/2011US7936600 Methods of programming data in a non-volatile memory device with a fringe voltage applied to conductive layer
05/03/2011US7936599 Coarse and fine programming in a solid state memory
04/2011
04/28/2011WO2011049628A1 Novel punch-through free program scheme for nt-string flash design
04/28/2011WO2011019794A3 Method and apparatus for addressing actual or predicted failures in a flash-based storage system
04/28/2011US20110096610 Method for enabling a sonos transistor to be used as both a switch and a memory
04/28/2011US20110096609 Novel punch-through free program scheme for nt-string flash design
04/28/2011US20110096608 Mitigation of runaway programming of a memory device
04/28/2011US20110096607 Programming a memory device to increase data reliability
04/28/2011US20110096606 Semiconductor integrated circuit adapted to output pass/fail results of internal operations
04/28/2011US20110096605 Semiconductor memory device and method for controlling the same
04/28/2011US20110096604 Semiconductor memory device including alternately arranged contact members
04/28/2011US20110096603 Reverse order page writing in flash memories
04/28/2011US20110096602 Nonvolatile memory devices operable using negative bias voltages and related methods of operation
04/28/2011US20110096601 Non-Volatile Memory And Method With Accelerated Post-Write Read To Manage Errors
04/28/2011US20110096600 Semiconductor memory device reducing resistance fluctuation of data transfer line
04/28/2011US20110096599 Multi level inhibit scheme
04/28/2011US20110096598 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
04/28/2011US20110096597 Programming a flash memory device
04/28/2011US20110096125 Inkjet printhead with nozzle layer defining etchant holes
04/28/2011DE102007006279B4 Nichtflüchtiges Halbleiterspeicherelement und Verfahren zum Betreiben eines nichtflüchtigen Halbleiterspeicherelements A non-volatile semiconductor memory device and method of operating a nonvolatile semiconductor memory element
04/27/2011EP2315213A1 Reading amplifier having fast bit line precharge means
04/27/2011EP2315212A1 Reducing the impact of program disturb during read
04/27/2011EP2315211A1 Memory device with serial protocol and corresponding addressing method
04/27/2011EP2002445B1 A non-volatile memory device and programmable voltage reference for a non-volatile memory device
04/27/2011EP1994534B1 Memory device distributed controller system
04/27/2011CN201812500U Removable storage device
04/27/2011CN1963949B Non-volatile phase-change memory device and method of reading the same
04/27/2011CN1679116B Memory device and system based on processor
04/27/2011CN102037520A Wear leveling technique for storage devices
04/27/2011CN102037519A Adaptive algorithm in cache operation with dynamic data latch requirements
04/27/2011CN102037518A Circuit for and an electronic device including a nonvolatile memory cell and a process of forming the electronic device
04/27/2011CN102037517A Memory with tunnel barrier and method for reading and writing information from and to this memory
04/27/2011CN102037516A Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage
04/27/2011CN102034804A Multilayer stacked storage and manufacture method thereof
04/27/2011CN102034548A Nonvolatile memory device and system, and method of programming a nonvolatile memory device
04/27/2011CN102034547A Memory system and control method for the same
04/27/2011CN102034546A 存储器链路初始化 Memory Link initialization
04/27/2011CN102034545A Nonvolatile memory with page copy capability and method thereof
04/27/2011CN102034544A Electrically erasable programmable read-only memory (EEPROM) circuit
04/27/2011CN102034543A Method for simultaneously programming multiple NANDFLASH chips in single task
04/27/2011CN102034542A Method for carrying out data pattern management as well as related memory device and controller thereof
04/27/2011CN102034541A Non-volatile memory and operation method thereof
04/27/2011CN102034540A Slew rate control device and method
04/27/2011CN102034539A Method for programming/erasing nanocrystalline device
04/27/2011CN102034538A Charge trapping memory and manufacturing method thereof
04/27/2011CN102034537A Data access device and data access method
04/27/2011CN102034536A Control system of flash memory and control method of flash memory
04/27/2011CN102034523A Semiconductor storage device and method for reducing area of chip of semiconductor storage device
04/26/2011US7934234 Transmission and reception of television programmes and other data
04/26/2011US7934181 Method and apparatus for improving SRAM cell stability by using boosted word lines
04/26/2011US7933158 Nonvolatile memory
04/26/2011US7933154 Non-volatile memory device for reducing layout area of global wordline decoder and operation method thereof
04/26/2011US7933152 Semiconductor memory device capable of increasing writing speed