| Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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| 03/13/2013 | CN101533671B Non-volatile memory device and method of operating the same |
| 03/13/2013 | CN101303890B Methods of reading data including comparing current and previous section addresses and related devices |
| 03/13/2013 | CN101290802B Self-adaptive and self-calibrating multi-stage non-volatile memory |
| 03/13/2013 | CN101256837B Method of operating nonvolatile memory device |
| 03/12/2013 | US8397035 Semiconductor memory system with first and second nonvolatile memories storing user and management data and a controller controlling read/write of the memories and having simultaneous data transfer in and out of one of the memories |
| 03/12/2013 | US8397019 Memory for accessing multiple sectors of information substantially concurrently |
| 03/12/2013 | US8395944 Method of operating semiconductor memory device |
| 03/12/2013 | US8395941 Multi-semiconductor material vertical memory strings, strings of memory cells having individually biasable channel regions, memory arrays incorporating such strings, and methods of accessing and forming the same |
| 03/12/2013 | US8395940 Page buffer circuit, nonvolatile memory device including the page buffer circuit, and method of operating the nonvolatile memory device |
| 03/07/2013 | WO2013033375A1 Apparatuses and methods of operating for memory endurance |
| 03/07/2013 | WO2013033107A2 Memory refresh methods and apparatuses |
| 03/07/2013 | WO2013032928A1 Threshold voltage compensation in a memory |
| 03/07/2013 | WO2013032434A1 Tile-level snapback detection through coupling capacitor in a cross point array |
| 03/07/2013 | WO2013032424A1 Circuit and method for reading a resistive switching device in an array |
| 03/07/2013 | WO2013030622A1 Operating a memory |
| 03/07/2013 | WO2013006579A3 Non-volatile memory error mitigation |
| 03/07/2013 | US20130058171 Semiconductor storage device |
| 03/07/2013 | US20130058170 Nonvolatile semiconductor storage device |
| 03/07/2013 | US20130058169 Non-volatile memory systems |
| 03/07/2013 | US20130058168 Methods, devices, and systems for dealing with threshold voltage change in memory devices |
| 03/07/2013 | US20130058167 Semiconductor device using charge pump circuit |
| 03/07/2013 | US20130058166 Semiconductor memory device |
| 03/07/2013 | US20130058165 Semiconductor memory device |
| 03/07/2013 | US20130058164 Memory apparatus, systems, and methods |
| 03/06/2013 | EP2565792A1 Block management schemes in hybrid SLC/MLC memory |
| 03/06/2013 | EP2564389A1 Memory module for simultaneously providing at least one secure and at least one insecure memory area |
| 03/06/2013 | EP2564388A1 Non-volatile memory and method with even/odd combined interleaved block decoding with adapted word line activation circuitry |
| 03/06/2013 | CN102959634A Saw-shaped multi-pulse programming for program noise reduction in memory |
| 03/06/2013 | CN102959632A Memories and their formation |
| 03/06/2013 | CN102956268A Data reading circuit, non-volatile memory device and data reading method |
| 03/06/2013 | CN102956267A Memory programming method and flash memory device using same |
| 03/06/2013 | CN102956266A Information storage method used in engine part of image forming device |
| 03/06/2013 | CN102956265A Variable-resistance memory device and driving method thereof |
| 03/06/2013 | CN102956264A Non-volatile static random access memory devices and methods of operations |
| 03/06/2013 | CN102956263A Method of operating semiconductor device including variable resistance device |
| 03/06/2013 | CN101789262B Variable resistance memory device |
| 03/06/2013 | CN101702328B 3d memory and operation method thereof |
| 03/06/2013 | CN101421795B Method of erasing an eeprom device |
| 03/06/2013 | CN101377955B Electrically erasable programmable read-only memory (EEPROM) cell and methods for forming and reading the same |
| 03/06/2013 | CN101276645B Memory device employing three-level cells and related methods of managing |
| 03/05/2013 | USRE44052 Flash memory management method |
| 03/05/2013 | US8391083 Semiconductor device capable of detecting defect of column selection line |
| 03/05/2013 | US8391080 Erase voltage reduction in a non-volatile memory device |
| 03/05/2013 | US8391079 EEPROM memory architecture optimized for embedded memories |
| 03/05/2013 | US8391078 Method and apparatus of operating a non-volatile DRAM |
| 03/05/2013 | US8391076 Nonvolatile memory device using interleaving technology and programming method thereof |
| 03/05/2013 | US8391075 Nonvolatile semiconductor memory device and method for driving same |
| 03/05/2013 | US8391073 Adaptive control of programming currents for memory cells |
| 03/05/2013 | US8391071 Readout circuit and semiconductor storage device |
| 03/05/2013 | US8391069 Programming method for nonvolatile semiconductor memory device |
| 03/05/2013 | US8391065 Semiconductor memory device reducing resistance fluctuation of data transfer line |
| 03/05/2013 | US8391064 Non-volatile memory with dynamic multi-mode operation |
| 03/05/2013 | US8391062 Nonvolatile memory device and related method of programming |
| 03/05/2013 | US8391061 Flash memory and associated methods |
| 03/05/2013 | US8391060 Nonvolatile memory and semiconductor device |
| 03/05/2013 | US8389357 Method of fabricating a memory device having a memory array including a plurality of memory cell transistors arranged in rows and columns |
| 02/28/2013 | WO2013028769A1 Memory cell coupling compensation |
| 02/28/2013 | WO2013028721A1 Read compensation for partially programmed blocks of non-volatile storage |
| 02/28/2013 | WO2013028434A2 Memory device readout using multiple sense times |
| 02/28/2013 | WO2013028430A2 Memory device with reduced sense time readout |
| 02/28/2013 | WO2013028377A1 System and method for performing memory operations on rram cells |
| 02/28/2013 | WO2012166548A3 Apparatus including memory system controllers and related methods |
| 02/28/2013 | US20130051156 Systems and methods for erasing charge-trap flash memory |
| 02/28/2013 | US20130051155 Semiconductor memory device capable of shortening erase time |
| 02/28/2013 | US20130051154 Method for and Flash Memory Device Having Improved Read Performance |
| 02/28/2013 | US20130051153 Floating addressing of an eeprom memory page |
| 02/28/2013 | US20130051152 Semiconductor memory device and method of operating the same |
| 02/28/2013 | US20130051150 Three-Dimensional NAND Memory With Stacked Mono-Crystalline Channels |
| 02/28/2013 | US20130051149 Apparatuses and methods of reprogramming memory cells |
| 02/28/2013 | US20130051148 Read compensation for partially programmed blocks of non-volatile storage |
| 02/28/2013 | US20130051147 Nonvolatile semiconductor memory device |
| 02/28/2013 | US20130051146 Three dimensional semiconductor memory device |
| 02/28/2013 | US20130051145 Semiconductor memory device and method of operating the same |
| 02/28/2013 | US20130051144 Semiconductor storage device comprising electrically rewritable nonvolatile semiconductor memory |
| 02/28/2013 | US20130051143 Memory cell coupling compensation |
| 02/28/2013 | US20130051142 Memory with three transistor memory cell device |
| 02/28/2013 | US20130051141 Threshold voltage compensation in a multilevel memory |
| 02/28/2013 | DE102012107639A1 Method for reading data from e.g. phase change RAM, involves scanning voltage level difference between data voltage and reference voltages to produce differential output signals, and amplifying output signals to produce read data |
| 02/27/2013 | EP2562760A2 Memory device readout using multiple sense times |
| 02/27/2013 | EP2562759A2 Memory device with reduced sense time readout |
| 02/27/2013 | EP2561511A1 Programming non-volatile storage includng reducing impact from other memory cells |
| 02/27/2013 | EP2561510A1 Status indication in a system having a plurality of memory devices |
| 02/27/2013 | CN102947887A Simultaneous multi-state read or verify in non-volatile storage |
| 02/27/2013 | CN102945683A Quick erasing-writing operation method for phase change memory |
| 02/27/2013 | CN101872643B Variable-resistance memory device and its operation method |
| 02/27/2013 | CN101840731B Nonvolatile semiconductor storage apparatus and reset method of the same |
| 02/27/2013 | CN101536108B Adaptive read and write systems and methods for memory cells |
| 02/26/2013 | US8386695 Methods and apparatus for writing data to non-volatile memory |
| 02/26/2013 | US8385137 Termination circuit of semiconductor device |
| 02/26/2013 | US8385132 Alternate bit line bias during programming to reduce channel to floating gate coupling in memory |
| 02/26/2013 | US8385131 Memory devices supporting simultaneous programming of multiple cells and programming methods thereof |
| 02/26/2013 | US8385130 Semiconductor memory device which stores plural data in a cell |
| 02/26/2013 | US8385129 Semiconductor memory device and control method thereof |
| 02/26/2013 | US8385128 Semiconductor memory |
| 02/26/2013 | US8385126 Nonvolatile semiconductor memory device |
| 02/26/2013 | US8385124 Semiconductor device and manufacturing method thereof |
| 02/26/2013 | US8385122 Non-volatile memory device having stacked structure, and memory card and electronic system including the same |
| 02/26/2013 | US8385121 Memory adapted to program a number of bits to a memory cell and read a different number of bits from the memory cell |
| 02/26/2013 | US8385120 Method of programming a nonvolatile memory device |
| 02/26/2013 | US8385117 Semiconductor memory device and decoding method |