| Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663) |
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| 01/29/2015 | US20150029779 Electronic device and method for fabricating the same |
| 01/29/2015 | US20150029777 Circuit and System of Using Junction Diode of MOS as Program Selector for Programmable Resistive Devices |
| 01/29/2015 | US20150029775 Memory cell array structures and methods of forming the same |
| 01/29/2015 | DE102014010865A1 Drei-dimensionaler zwei-poliger Speicher mit verstärktem elektrischem Feld Three-dimensional two-pin memory with enhanced electric field |
| 01/28/2015 | EP2828859A1 Multi-function resistance change memory cells and apparatuses including the same |
| 01/28/2015 | CN104318955A 基于二极管选通的相变存储器的数据读出电路及读出方法 Readout circuit and readout method based on the data strobe diode phase-change memory |
| 01/28/2015 | CN104318954A 永久保存数据的方法及立体信息载体 Permanently store data and three-dimensional information carrier method |
| 01/28/2015 | CN103050623B 一种具备多阻态特性的二阶忆阻器及其调制方法 One kind with multi-impedance characteristics of second-order memristor and modulation method |
| 01/27/2015 | US8943374 Writing scheme for phase change material-content addressable memory |
| 01/27/2015 | US8942050 Method of inspecting variable resistance nonvolatile memory device and variable resistance nonvolatile memory device |
| 01/27/2015 | US8942041 Memory device and column decoder for reducing capacitive coupling effect on adjacent memory cells |
| 01/27/2015 | US8942033 Driving stage for phase change non-volatile memory devices provided with auto-calibration feature |
| 01/27/2015 | US8942028 Data reprogramming for a data storage device |
| 01/27/2015 | US8942027 Memory storage circuit and method of driving memory storage circuit |
| 01/27/2015 | US8942026 Circuit and method for reading a resistive switching device in an array |
| 01/27/2015 | US8942025 Variable resistance nonvolatile memory element writing method |
| 01/27/2015 | US8942024 Circuit arrangement and a method of writing states to a memory cell |
| 01/27/2015 | US8942023 Semiconductor device |
| 01/27/2015 | US8941088 Nonvolatile memory with resistance change layer |
| 01/22/2015 | WO2015008438A1 Nonvolatile semiconductor storage device and method for rewriting same |
| 01/22/2015 | US20150024167 Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| 01/22/2015 | US20150023097 Partial reprogramming of solid-state non-volatile memory cells |
| 01/22/2015 | US20150023095 Apparatuses including current compliance circuits and methods |
| 01/22/2015 | US20150023094 Drift mitigation for multi-bits phase change memory |
| 01/22/2015 | US20150023089 Resistance variable element methods and apparatuses |
| 01/22/2015 | US20150022327 Externally triggered memory type liquid crystal thin film |
| 01/21/2015 | EP2826035A1 Memory and logic device and methods for performing thereof |
| 01/21/2015 | CN104299645A 一种阻变存储器写操作电路 A resistor change memory write operation circuit |
| 01/21/2015 | CN103035838B 阻变存储器件及其制备方法 Resistance change memory device and method of preparation |
| 01/20/2015 | US8937841 Driver for semiconductor memory and method thereof |
| 01/20/2015 | US8937830 Semiconductor memory device |
| 01/20/2015 | US8937829 System and a method for designing a hybrid memory cell with memristor and complementary metal-oxide semiconductor |
| 01/15/2015 | WO2015006104A1 All around electrode for novel 3d rram applications |
| 01/15/2015 | WO2015005149A1 Reconfigurable circuit and method for programming same |
| 01/15/2015 | WO2015003653A1 Storage method and memory based on data inversion |
| 01/15/2015 | US20150017760 Method for manufacturing molecular memory device |
| 01/15/2015 | US20150016178 All around electrode for novel 3D RRAM applications |
| 01/15/2015 | US20150016177 Nonvolatile semiconductor memory device |
| 01/15/2015 | US20150016176 Memory storage circuit and method of driving memory storage circuit |
| 01/14/2015 | CN104282833A 阻变存储器件及其制造方法 Memory device and method of manufacturing resistive |
| 01/14/2015 | CN104282709A 非易失性存储装置 Nonvolatile memory device |
| 01/14/2015 | CN104282333A 基于数据反转的存储方法及存储器 Based on the data storage method and reverse memory |
| 01/14/2015 | CN104282332A 具有实时触发器状态保存功能的触发器电路 Flip-flop circuit with real-time status of saving feature |
| 01/14/2015 | CN102790073B 电阻变化型非易失性存储装置以及存储器单元的形成方法 The method of forming a resistance variable type nonvolatile memory device and a memory unit of |
| 01/14/2015 | CN102598139B 具有非欧姆选择层的非易失性存储单元 A nonvolatile memory cell having a non-ohmic layer selection |
| 01/14/2015 | CN102473454B 具有改进的切换的pcmo非易失阻性存储器 Having improved resistive switching nonvolatile memory pcmo |
| 01/14/2015 | CN102439665B 包括电阻切换元件的多位电阻切换存储器单元 Resistance-switching element comprising a number of resistive switching memory cell |
| 01/14/2015 | CN102171762B 使用交错预充电的阻性存储器的连续编程 Interleaving precharge resistive memory programmed with continuous |
| 01/14/2015 | CN102077292B 用于非易失性存储器的具有电流限制的反向设置 Reverse provided for non-volatile memory having a current limiting |
| 01/13/2015 | US8934295 Compensation scheme for non-volatile memory |
| 01/13/2015 | US8934294 Semiconductor integrated circuit device, method of manufacturing the same, and method of driving the same |
| 01/13/2015 | US8934292 Balanced method for programming multi-layer cell memories |
| 01/13/2015 | US8934285 Method and apparatus for forming a contact in a cell of a resistive random access memory to reduce a voltage required to program the cell |
| 01/13/2015 | US8934284 Methods and apparatuses using a transfer function to predict resistance shifts and/or noise of resistance-based memory |
| 01/13/2015 | US8934281 Bit set modes for a resistive sense memory cell array |
| 01/13/2015 | US8934280 Capacitive discharge programming for two-terminal memory cells |
| 01/13/2015 | US8933491 Arrays of memory cells and methods of forming an array of vertically stacked tiers of memory cells |
| 01/13/2015 | US8933429 Using multi-layer MIMCAPs in the tunneling regime as selector element for a cross-bar memory array |
| 01/08/2015 | US20150009753 Phase change memory device having multi-level and method of driving the same |
| 01/08/2015 | US20150009752 Phase change memory device having multi-level and method of driving the same |
| 01/08/2015 | US20150009745 High operating speed resistive random access memory |
| 01/08/2015 | US20150009744 Non-volatile memory device |
| 01/08/2015 | US20150009736 Approximate multi-level cell memory operations |
| 01/07/2015 | EP2821998A1 Non-volatile memory device |
| 01/07/2015 | CN104272395A 利用时间交错的光学定时的采样装置 The timing of the sampling device using an optical time-interleaved |
| 01/07/2015 | CN104272394A 多功能电阻改变存储器单元及包含所述存储器单元的设备 Multifunctional resistance change memory cell and the memory cell device comprising |
| 01/07/2015 | CN104269186A 具有多电平的相变存储器设备及其驱动方法 Phase change memory device and a driving method of the multi-level |
| 01/07/2015 | CN103052991B 电阻变化型非易失性存储元件的写入方法 Write method the resistance variable nonvolatile memory element |
| 01/07/2015 | CN103052990B 电阻变化型非易失性存储装置及其驱动方法 Variable resistance nonvolatile memory device and driving method |
| 01/06/2015 | US8930174 Modeling technique for resistive random access memory (RRAM) cells |
| 01/06/2015 | US8929127 Current generator for nonvolatile memory device and write and/or read currents calibrating method using the same |
| 01/06/2015 | US8929126 Array voltage regulating technique to enable data operations on large cross-point memory arrays with resistive memory elements |
| 01/06/2015 | US8929125 Apparatus and methods for forming a memory cell using charge monitoring |
| 01/06/2015 | US8929124 Resistive memory device and related method of operation |
| 01/06/2015 | US8929123 Resistive-switching device capable of implementing multiary addition operation and method for multiary addition operation |
| 01/06/2015 | US8929119 Memory module and on-die termination setting method thereof |
| 01/06/2015 | US8927956 Resistance type memory device |
| 01/06/2015 | US8927955 Resistance change memory |
| 01/01/2015 | US20150003149 Mixed mode programming for phase change memory |
| 01/01/2015 | US20150003145 Data-masked analog and digital read for resistive memories |
| 01/01/2015 | US20150003137 Nonvolatile memory device using a resistance material and a driving method thereof |
| 01/01/2015 | US20150001457 Phase-change memory cells |
| 12/31/2014 | CN104252879A 一种阻变存储器读出电路 A resistor change memory readout circuit |
| 12/31/2014 | CN102959636B 非易失性半导体存储装置及其读出方法 Nonvolatile semiconductor memory device and a method of reading |
| 12/30/2014 | US8923073 Storage element reading using ring oscillator |
| 12/30/2014 | US8923050 3D memory with vertical bit lines and staircase word lines and vertical switches and methods thereof |
| 12/30/2014 | US8923043 Memory device using flag cells and system using the memory device |
| 12/30/2014 | US8923041 Self-referenced sense amplifier for spin torque MRAM |
| 12/30/2014 | US8923034 Multi-level memory cell with continuously tunable switching |
| 12/30/2014 | US8923032 Crosspoint nonvolatile memory device and forming method thereof |
| 12/30/2014 | US8923031 Semiconductor memory device |
| 12/30/2014 | US8923029 Field programmable read-only memory device |
| 12/30/2014 | US8921156 Non-volatile resistive-switching memories |
| 12/30/2014 | US8920684 Al-Sb-Te phase change material used for phase change memory and fabrication method thereof |
| 12/25/2014 | US20140376309 Phase change memory material and system for embedded memory applications |
| 12/25/2014 | US20140376308 Phase change memory, writing method thereof and reading method thereof |
| 12/25/2014 | US20140376307 Mult-level recording in a superattice phase change memory cell |
| 12/25/2014 | US20140376306 Methods for a phase-change memory array |
| 12/25/2014 | US20140376304 Resistance change memory cell circuits and methods |
| 12/25/2014 | US20140376303 Nonvolatile semiconductor memory device including variable resistance element |