Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
09/2014
09/11/2014US20140254244 Resistive Random Access Memory (RERAM) and Conductive Bridging Random Access Memory (CBRAM) Cross Coupled Fuse and Read Method and System
09/11/2014US20140254243 Electronic device and method for fabricating the same
09/11/2014US20140254242 Non-volatile storage system biasing conditions for standby and first read
09/11/2014US20140254241 Semiconductor device and information reading method
09/11/2014US20140254240 Method of programming a non-volatile resistive memory
09/11/2014US20140254239 Electronic device comprising a semiconductor memory unit
09/11/2014US20140254238 Sensing data in resistive switching memory devices
09/11/2014US20140254237 Method for Operating RRAM Memory
09/11/2014US20140254236 Memory state sensing based on cell capacitance
09/11/2014US20140254231 3D Non-Volatile Memory Having Low-Current Cells and Methods
09/11/2014DE102013203761A1 Magnetooptik mit strukturierten unmagnetischen Metallen Magneto-optics with structured non-magnetic metals
09/09/2014US8830767 Electro-static discharge power supply clamp with disablement latch
09/09/2014US8830741 Phase change memory with flexible time-based cell decoding
09/09/2014US8830740 Semiconductor storage device
09/09/2014US8830739 Non-volatile memory device having multi-level cells and method of forming the same
09/09/2014US8830731 Systems, methods, and devices with write optimization in phase change memory
09/09/2014US8830730 Variable resistance nonvolatile storage device and method of forming memory cell
09/09/2014US8830728 Resistance change memory device and current trimming method thereof
09/09/2014US8830727 Multi-level memory cell with continuously tunable switching
09/09/2014US8830723 Method of driving nonvolatile semiconductor device
09/09/2014US8830722 Methods, apparatuses, and circuits for programming a memory device
09/09/2014US8830720 Circuit and system of using junction diode as program selector and MOS as read selector for one-time programmable devices
09/04/2014WO2014133912A1 Reram forming with reset and iload compensation
09/04/2014US20140247654 Clamp elements, memories, and apparatuses for memories and methods for forming the same
09/04/2014US20140247649 Bipolar Resistive-Switching Memory with a Single Diode Per Memory Cell
09/04/2014US20140247648 Electronic device
09/04/2014US20140247647 Electronic device and method for fabricating the same
09/04/2014US20140247646 Nonvolatile memory device having multiple read circuits and using variable resistive materials
09/04/2014US20140247645 Nonvolatile memory device and related method for reducing access latency
09/04/2014US20140247644 Resistive Memory Reset
09/04/2014US20140247640 Memory architecture and cell design employing two access transistors
09/02/2014US8824229 Semiconductor memory apparatus having a pre-discharging function, semiconductor integrated circuit having the same, and method for driving the same
09/02/2014US8824220 Semiconductor apparatus
09/02/2014US8824201 Semiconductor memory apparatus and data reading method thereof
09/02/2014US8824191 Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
09/02/2014US8824190 Memory state sensing based on cell capacitance
09/02/2014US8824188 Operating method for memory device and memory array and operating method for the same
09/02/2014US8822967 Multi-terminal phase change devices
08/2014
08/28/2014WO2014130604A1 Smart read scheme for memory array sensing
08/28/2014WO2014130586A1 Compensation scheme for non-volatile memory
08/28/2014WO2014130543A1 Apparatus and methods for forming a memory cell using charge monitoring
08/28/2014WO2014130252A1 Phase change memory management
08/28/2014US20140244945 Electronic device and method for operating electronic device
08/28/2014US20140244931 Electronic device
08/28/2014US20140244930 Electronic devices having semiconductor magnetic memory units
08/28/2014US20140241051 Semiconductor device and its manufacturing method
08/28/2014US20140241050 Nonvolatile semiconductor memory device
08/28/2014US20140241049 Apparatuses, sense circuits, and methods for compensating for a wordline voltage increase
08/28/2014US20140241048 Phase change memory management
08/28/2014US20140241044 Structure of a switching device in an array
08/28/2014US20140241042 Electronic device and method for operating the same
08/28/2014US20140241041 Reference column of semiconductor memory, and electronic device including the same
08/28/2014US20140241040 Electronic device
08/28/2014US20140241039 Electronic device and method for operating the same
08/28/2014US20140241038 Semiconductor device and method of controlling semiconductor device
08/28/2014US20140241037 Semiconductor memory device
08/28/2014US20140241036 Memory system
08/28/2014US20140241035 Reram forming with reset and iload compensation
08/28/2014US20140241034 Resistive Switching Random Access Memory Structure and Method To Recreate Filament and Recover Resistance Window
08/28/2014US20140241033 Management of Variable Resistance Data Storage Device
08/28/2014US20140241032 Methods and apparatuses using a transfer function to predict resistance shifts and/or noise of resistance-based memory
08/28/2014US20140241023 Memory Elements and Cross Point Switches and Arrays for Same Using Nonvolatile Nanotube Blocks
08/26/2014US8819505 Data processor having disabled cores
08/26/2014US8817563 Sensing circuit for programmable resistive device using diode as program selector
08/26/2014US8817543 Flash memory
08/26/2014US8817530 Data-masked analog and digital read for resistive memories
08/26/2014US8817525 Semiconductor memory device
08/26/2014US8817524 Resistive random access memory cells having metal alloy current limiting layers
08/26/2014US8817523 Non-volatile semiconductor memory device
08/26/2014US8817522 Unipolar memory devices
08/26/2014US8817515 Nonvolatile semiconductor memory device
08/21/2014US20140233331 Write control circuits and wire control methods
08/21/2014US20140233307 Method of programming a phase change memory and phase change memory device
08/21/2014US20140233301 Resistive switching for non volatile memory device using an integrated breakdown element
08/21/2014US20140233300 Apparatuses and operation methods associated with resistive memory cell arrays with separate select lines
08/21/2014US20140233299 Set/Reset Algorithm Which Detects And Repairs Weak Cells In Resistive-Switching Memory Device
08/21/2014US20140233298 Apparatus and methods for forming a memory cell using charge monitoring
08/21/2014US20140233293 Permutational memory cells
08/20/2014EP2766907A1 Select device for cross point memory structures
08/19/2014US8811063 Memory cells, methods of programming memory cells, and methods of forming memory cells
08/19/2014US8811062 Variable resistance memory device and method of manufacturing the same
08/19/2014US8811061 Memory device, semiconductor storage device, method for manufacturing memory device, and reading method for semiconductor storage device
08/19/2014US8811060 Non-volatile memory crosspoint repair
08/19/2014US8811058 Resistance change element, method for manufacturing the same, and semiconductor memory
08/14/2014US20140226393 Temperature compensation of conductive bridge memory arrays
08/14/2014US20140226392 Arrays Of Vertically Stacked Tiers Of Non-Volatile Cross Point Memory Cells and Methods Of Reading A Data Value Stored By An Array Of Vertically Stacked Tiers Of Non-Volatile Cross Point Memory Cells
08/14/2014US20140226391 Method of programming a non-volatile resistive memory
08/14/2014US20140226390 Non-volatile memory system with reset control mechanism and method of operation thereof
08/14/2014US20140226389 Hash functions used to track variance parameters of resistance-based memory elements
08/14/2014US20140226388 Optimization of Variable Resistance Memory Cells
08/13/2014EP2765577A1 Method for programming a non-volatile resistive memory
08/13/2014EP2765576A1 Method for pre-programming a phase-changing memory cell and phase-changing memory cell
08/13/2014EP2765575A1 Method for programming a non-volatile resistive memory
08/13/2014EP2764514A2 Logic gate and a corresponding method of function
08/13/2014CN103988264A 包含金属氧化物电阻式存储器元件和反熔丝层的非易失性存储器单元 A nonvolatile memory cell comprising a metal oxide resistive memory element and the antifuse layer,
08/13/2014CN103988263A 用以减少相变存储器的读取错误的读取偏置管理 To reduce the reading error of the phase change memory read bias Management
08/13/2014CN103985408A 优化可变阻抗存储器单元格 Optimization variable impedance memory cell
08/12/2014US8804402 Nonvolatile semiconductor memory device
08/12/2014US8804399 Multi-function resistance change memory cells and apparatuses including the same
08/12/2014US8803212 Three-dimensional crossbar array
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