Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
10/2014
10/07/2014US8854861 Mixed mode programming for phase change memory
10/07/2014US8854860 Metal-insulator transition latch
10/07/2014US8854859 Programmably reversible resistive device cells using CMOS logic processes
10/07/2014US8854856 Methods and apparatus for ROM devices
10/07/2014US8854562 Liquid crystal panel
10/07/2014US8853759 Resistive memory devices and methods of manufacturing the same
10/07/2014US8853663 Nonvolatile memory device and manufacturing method thereof
10/07/2014US8853659 Switchable electronic device and method of switching said device
10/07/2014US8852706 Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
10/07/2014US8852686 Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
10/02/2014WO2014158956A1 Ferroelectric capacitor with improved fatigue and breakdown properties
10/02/2014WO2014158538A1 Cell programming verification
10/02/2014WO2014158536A1 Phase change memory mask
10/02/2014WO2014158314A1 Improved transistor design for use in advanced nanometer flash memory devices
10/02/2014WO2014158149A1 Non-volatile memory based synchronous logic
10/02/2014US20140293689 Semiconductor memory apparatus
10/02/2014US20140293688 Phase-change memory device and method for multi-level programming of phase-change memory device
10/02/2014US20140293687 Semiconductor device with pcm memory cells and nanotubes and related methods
10/02/2014US20140293678 Volatile/Non-Volatile Floating Electrode Logic/Memory Cell
10/02/2014US20140293677 Electronic device and method for fabricating the same
10/02/2014US20140293676 Programmable impedance memory elements and corresponding methods
10/02/2014US20140293675 Nonvolatile semiconductor device and method for driving same
10/02/2014US20140293674 RRAM, and Methods of Storing and Retrieving Information for RRAM
10/02/2014US20140292368 Field programmable gate array utilizing two-terminal non-volatile memory
10/02/2014DE112011106013T5 System und Verfahren für den intelligenten Datentransfer von einem Prozessor in ein Speicheruntersystem System and method for intelligent data transfer from a processor to a memory subsystem
09/2014
09/30/2014US8848455 Nonvolatile memory device and method for manufacturing the same
09/30/2014US8848436 Electric element
09/30/2014US8848426 Cross-point variable resistance nonvolatile memory device and reading method for cross-point variable resistance nonvolatile memory device
09/30/2014US8848425 Conductive metal oxide structures in non volatile re-writable memory devices
09/30/2014US8848424 Variable resistance nonvolatile memory device, and accessing method for variable resistance nonvolatile memory device
09/30/2014US8848423 Circuit and system of using FinFET for building programmable resistive devices
09/30/2014US8848422 Variable resistance nonvolatile memory device and driving method thereof
09/30/2014US8848421 Forming method of performing forming on variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device
09/30/2014US8848415 Three dimensional non-volatile storage with multi block row selection
09/30/2014US8847209 Memory device and a semiconductor device
09/30/2014US8847194 Memory component including an ion source layer and a resistance change layer, and a memory device using the same
09/25/2014WO2014149586A1 Dynamic address grouping for parallel programming in non-volatile memory
09/25/2014WO2014149585A1 Program cycle skip evaluation before write operations in non-volatile memory
09/25/2014WO2014148405A1 Resistance change memory
09/25/2014US20140286090 Semiconductor integrated circuit system and method for driving the same
09/25/2014US20140286089 Semiconductor integrated circuit system and method for driving the same
09/25/2014US20140286082 Memory device
09/25/2014US20140286081 Resistance change memory
09/25/2014US20140286080 Resistance change memory
09/25/2014US20140286079 Nonvolatile semiconductor memory device and method of controlling the same
09/25/2014US20140286078 Resistance change memory
09/25/2014US20140286077 Resistance change type memory
09/25/2014US20140286075 Resistance change memory
09/23/2014US8842481 Nonvolatile semiconductor memory device
09/23/2014US8842468 Load and short current measurement by current summation technique
09/23/2014US8842463 Storage apparatus and operation method for operating the same
09/23/2014US8842462 Resistive random access memory device and operating method thereof
09/23/2014US8842461 Phase change memory device having multi-level and method of driving the same
09/23/2014US8841648 Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
09/23/2014US8841642 Memory element and method for manufacturing the same, and semiconductor device
09/18/2014WO2014139277A1 Gate device unit for cross array integration mode of bipolar resistive random access memory
09/18/2014US20140281189 Processor system having variable capacity memory
09/18/2014US20140278160 Estimation method, estimation device, and inspection device for variable resistance element, and nonvolatile memory device
09/18/2014US20140269046 Apparatuses and methods for use in selecting or isolating memory cells
09/18/2014US20140269045 Cell programming verification
09/18/2014US20140269044 Methods and apparatuses for controlling memory write sequences
09/18/2014US20140269043 Phase change memory mask
09/18/2014US20140269008 Non-volatile memory using bi-directional resistive elements
09/18/2014US20140269007 Complementary metal oxide or metal nitride heterojunction memory devices with asymmetric hysteresis property
09/18/2014US20140269006 Fast read speed memory device
09/18/2014US20140269004 Method for Improving Data Retention of ReRAM Chips Operating at Low Operating Temperatures
09/18/2014US20140269003 Memory cell with volatile and non-volatile storage
09/18/2014US20140269002 Two-terminal memory with intrinsic rectifying characteristic
09/18/2014US20140269001 Amorphous silicon rram with non-linear device and operation
09/18/2014US20140269000 Semiconductor storage device
09/18/2014US20140268999 Semiconductor storage device
09/18/2014US20140268998 Rram with dual mode operation
09/18/2014US20140268997 Programming two-terminal memory cells with reduced program current
09/18/2014US20140268996 Variable resistance memory device and method of driving the same
09/18/2014US20140268995 Semiconductor device and electronic device including the same
09/18/2014US20140268994 Write-Time Based Memristive Physical Unclonable Function
09/18/2014US20140268993 Nonvolatile resistive memory element with an oxygen-gettering layer
09/18/2014US20140268992 Memory Cells, Memory Systems, and Memory Programming Methods
09/18/2014US20140268991 Chalcogenide material and methods for forming and operating devices incorporating the same
09/18/2014US20140268990 Stackable non-volatile memory
09/18/2014US20140268989 Resistive non-volatile memory
09/18/2014US20140268988 Resistive memory cell
09/17/2014EP2779174A1 Non-volatile memory with overwrite capability and low write amplification
09/16/2014US8839053 Error correcting pointers for non-volatile storage
09/16/2014US8837211 Robust initialization with phase change memory cells in both configuration and array
09/16/2014US8837201 Programming an array of resistance random access memory cells using unipolar pulses
09/16/2014US8837200 Nonvolatile semiconductor memory device and read method for the same
09/16/2014US8837199 Semiconductor memory device
09/16/2014US8837197 Circuit for generating write signal, variable resistance memory device, and method for programming variable resistance memory
09/16/2014US8835895 Memory device and fabrication process thereof
09/16/2014US8835893 Resistive memory cell fabrication methods and devices
09/16/2014US8835892 Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
09/16/2014US8834968 Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
09/12/2014WO2014138554A1 Resistive random access memory (reram) and conductive bridging random access memory (cbram) cross coupled fuse and read method and system
09/12/2014WO2014138182A1 3d non-volatile memory having low-current cells and fabrication thereof
09/12/2014WO2014137943A2 Programmable impedance memory elements and corresponding methods
09/11/2014US20140254258 Reference voltage generators and sensing circuits
09/11/2014US20140254257 Memory And Memory Managing Method
09/11/2014US20140254256 Vertical type semiconductor device, fabrication method thereof and operation method thereof
09/11/2014US20140254245 Hybrid non-volatile memory device
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