Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
12/2014
12/25/2014US20140376302 Nonvolatile semiconductor memory device
12/25/2014US20140376301 Memory element and memory device
12/25/2014US20140376300 Differential bit cell
12/25/2014US20140376299 Methods and circuits for bulk erase of resistive memory
12/25/2014US20140376298 Data encoding for non-volatile memory
12/25/2014US20140376297 Data encoding for non-volatile memory
12/24/2014CN104246896A 存储器件、半导体单元及其操作方法和电子设备 Memory device, the semiconductor unit and its operation method and an electronic device
12/24/2014CN104241525A 可变电阻存储器件及其制造方法 A variable resistance memory device and manufacturing method thereof
12/23/2014US8917564 Three-dimensional semiconductor memory device having compensating data skewing according to interlayer timing delay and method of de-skewing data therein
12/23/2014US8917562 Body voltage sensing based short pulse reading circuit
12/23/2014US8917545 Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same
12/23/2014US8917539 Solid, multi-state molecular random access memory
12/23/2014US8917538 Nonvolatile semiconductor memory device
12/23/2014US8917537 Inline fuses in programmable crossbar arrays
12/23/2014US8917534 Path isolation in a memory device
12/23/2014US8916848 Resistance change device and memory cell array
12/23/2014US8915436 Method and apparatus for optically reading information
12/18/2014US20140369114 Phase-change memory cells
12/18/2014US20140369113 Phase-change memory cells
12/18/2014US20140369108 System and a method for designing a hybrid memory cell with memristor and complementary metal-oxide semiconductor
12/18/2014US20140369107 Structures for resistance random access memory and methods of forming the same
12/18/2014US20140369104 Memory device
12/18/2014US20140367631 Self-rectifying rram element
12/17/2014CN102473456B 非易失性存储器的层级式交点阵列 Hierarchical array of non-volatile memory of the intersection
12/16/2014US8914690 Multi-core processor having disabled cores
12/16/2014US8913426 Read distribution management for phase change memory
12/16/2014US8913425 Phase change memory mask
12/16/2014US8913418 Confined defect profiling within resistive random memory access cells
12/16/2014US8913417 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
12/16/2014US8913416 Variable-resistance memory device and its operation method
12/16/2014US8913413 Memory system with sectional data lines
12/16/2014US8912518 Resistive random access memory cells having doped current limiting layers
12/16/2014US8912516 Memory element with ion source layer and memory device
12/11/2014US20140365723 Resistance memory device and apparatus, fabrication method thereof, operation method thereof, and system having the same
12/11/2014US20140362650 Apparatuses and methods for efficient write in a cross-point array
12/11/2014US20140362634 Oxide based memory
12/11/2014US20140362633 Memory Devices and Memory Operational Methods
12/11/2014US20140361851 Signal-processing devices having one or more memristors
12/10/2014CN204010694U 相变存储器 Phase change memory
12/10/2014CN104205226A 存储器和逻辑器件及其执行方法 Memory and logic devices and its execution method
12/10/2014CN104201281A 一种有机无机复合阻变存储器及其制备方法 An organic-inorganic composite resistive memory and its preparation method
12/10/2014CN102484119B 带有具有倒圆拐角的多个支柱的交叉点非易失性存储器件及其制造方法 Crosspoint rounded corners having a plurality of columns of non-volatile memory device and manufacturing method with
12/10/2014CN102483948B 具有改进型存储器块切换的半导体存储器 A semiconductor memory improved memory block switching
12/09/2014US8910000 Program-disturb management for phase change memory
12/09/2014US8909849 Pipeline architecture for scalable performance on memory
12/09/2014US8908460 Nonvolatile memory systems using time-dependent read voltages and methods of operating the same
12/09/2014US8908427 Phase change memory with flexible time-based cell decoding
12/09/2014US8908426 Cell sensing circuit for phase change memory and methods thereof
12/09/2014US8908417 Systems, methods, and devices with write optimization in phase change memory
12/09/2014US8908416 Semiconductor memory device
12/09/2014US8908415 Resistive memory reset
12/09/2014US8908414 Modified reset state for enhanced read margin of phase change memory
12/09/2014US8908413 Programmable resistance memory
12/09/2014US8907318 Resistance change memory
12/09/2014US8907317 Silicon based nanoscale crossbar memory
12/09/2014US8907316 Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
12/04/2014US20140355338 Non-volatile phase-change resistive memory
12/04/2014US20140355331 Multi-level memory cell with continuously tunable switching
12/04/2014US20140355330 Integrated circuit
12/04/2014US20140355329 Method and apparatus for common source line charge transfer
12/04/2014US20140355326 Non-volatile memory device
12/02/2014US8902639 Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
12/02/2014US8902636 Resistance change memory
12/02/2014US8902635 Variable resistance nonvolatile memory device and method of writing thereby
12/02/2014US8902633 Resistive memory device comprising selectively disabled write driver
12/02/2014US8902632 Hybrid resistive memory devices and methods of operating and manufacturing the same
12/02/2014US8902629 Forming method of performing forming on variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device
12/02/2014US8902628 Resistive memory device and sensing margin trimming method thereof
12/02/2014US8901712 Semiconductor memory device
12/02/2014US8901532 Non-volatile programmable device including phase change layer and fabricating method thereof
11/2014
11/27/2014US20140347920 Dual mode clock and data scheme for memory programming
11/27/2014US20140347914 Multi-function resistance change memory cells and apparatuses including the same
11/27/2014US20140347913 Resistive switching memory device and method for operating the same
11/27/2014US20140347912 Sense amplifier local feedback to control bit line voltage
11/27/2014US20140347911 Nonvolatile semiconductor memory device
11/27/2014US20140347910 Reading memory elements within a crossbar array
11/25/2014US8897064 Compensation scheme for non-volatile memory
11/25/2014US8897063 Multilevel differential sensing in phase change memory
11/25/2014US8897062 Memory programming for a phase change memory cell
11/25/2014US8897059 Resistance change memory device that stores a reversible resistance value as data
11/25/2014US8897058 Nonvolatile memory apparatus and method for driving the same
11/25/2014US8897056 Pillar-shaped nonvolatile memory and method of fabrication
11/25/2014US8896033 Electrochemical transistor
11/20/2014US20140340956 Memory device and method of controlling memory device
11/18/2014US8891323 Semiconductor memory device capable of measuring write current and method for measuring write current
11/18/2014US8891320 Semiconductor memory apparatus, and divisional program control circuit and program method therefor
11/18/2014US8891319 Verify or read pulse for phase change memory and switch
11/18/2014US8891317 Volatile memory with a decreased consumption
11/18/2014US8891295 Semiconductor device
11/18/2014US8891294 Multilevel differential sensing in phase change memory
11/18/2014US8891293 High-endurance phase change memory devices and methods for operating the same
11/18/2014US8891284 Memristors based on mixed-metal-valence compounds
11/18/2014US8891283 Memristive device based on current modulation by trapped charges
11/18/2014US8891282 Photon echo quantum memory and method
11/18/2014US8891276 Memory array with local bitlines and local-to-global bitline pass gates and gain stages
11/18/2014US8890300 Discrete three-dimensional memory comprising off-die read/write-voltage generator
11/18/2014US8890233 3D memory array with improved SSL and BL contact layout
11/18/2014US8889479 Nonvolatile memory elements with metal-deficient resistive-switching metal oxides
11/13/2014US20140334223 Apparatuses and methods for determining stability of a memory cell
11/13/2014US20140334222 Low read current architecture for memory
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