Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
04/2005
04/14/2005US20050080762 File storage apparatus
04/14/2005US20050079727 One mask PT/PCMO/PT stack etching process for RRAM applications
04/14/2005US20050079659 Large-area nanoenabled macroelectronic substrates and uses therefor
04/14/2005US20050079529 Using laser excitation and fluorescence to identify regions of hybridization along microarray comprised of immobilized polynucleotides; gene expression analysis; genomics
04/14/2005US20050078902 Photonic interconnect system
04/14/2005US20050078505 AC sensing for a resistive memory
04/14/2005US20050077606 Semiconductor arrangement comprising transistors based on organic semiconductors and non-volatile read-writing memory cells
04/13/2005EP1522927A2 File storage apparatus capable of restoring file management information
04/13/2005EP1254398B1 Method and system for recording of information on a holographic medium
04/13/2005CN1606238A Control circuit and reconfigurable logic block
04/12/2005US6880146 Molecular-wire-based restorative multiplexer, and method for constructing a multiplexer based on a configurable, molecular-junction-nanowire crossbar
04/12/2005US6879525 Feedback write method for programmable memory
04/12/2005US6878961 Photosensitive polymeric memory elements
04/07/2005WO2005031307A2 Phase angle controlled stationary elements for long wavelength electromagnetic radiation
04/07/2005WO2004072334A3 Nanofabric articles and methods of making the same
04/07/2005US20050074926 Method of making non-volatile field effect devices and arrays of same
04/07/2005US20050072989 Non-volatile memory device
04/07/2005DE10340610A1 Verbindung mit mindestens einer Speichereinheit aus organischem Speichermaterial, insbesondere zur Verwendung in CMOS-Strukturen, Halbleiterbauelement und ein Verfahren zur Herstellung eines Halbleiterbauelementes Compound having at least a memory unit of organic memory material, in particular for use in CMOS structures, semiconductor device and a method of manufacturing a semiconductor device
04/06/2005CN1604210A Phase change material capable of being used for phase transformation memory multi-stage storage
04/06/2005CN1603384A Method for preparing electron trapping materials with reactant carbon as reducing agent
04/05/2005US6875833 Monomers with trinuclea groupings, which are capable of absorbing the electromagnetic radiation of visible light, and are structured so that in their thermodynamically stable state they are distended and strongly anisomteric
04/05/2005US6875651 Dual-trench isolated crosspoint memory array and method for fabricating same
04/05/2005US6874686 Optical readout device
03/2005
03/31/2005WO2005029498A2 Nanoscale wire coding for stochastic assembly
03/31/2005WO2005029145A1 A method of optical data storage
03/31/2005US20050070678 Homopolymers which exhibit a high level of photo-inducable birefringence
03/31/2005US20050070032 Ferroelectric polymer memory with a thick interface layer
03/31/2005US20050069670 Piracy-resistant data leasing system and method.
03/31/2005US20050068805 Quantum supermemory
03/31/2005US20050068804 Phase-change memory device and method that maintains the resistance of a phase-change material in a reset state within a constant resistance range
03/31/2005US20050068679 Magnetic storage medium and method for making same
03/30/2005EP1519490A1 Control circuit and reconfigurable logic block
03/30/2005EP1518146A2 Electric-field actuated chromogenic materials based on molecules with a rotatable middle segment for applications in photonic switching
03/30/2005EP1442461B1 Molecular crossbar latch
03/30/2005CN1602519A Optical readout device
03/30/2005CN1601628A Overlapped light waveguide 3-D data memory able to even readout and data recording method
03/29/2005US6873593 Three-Dimensional optical memory with fluorescent photosensitive vitreous material read and written to by laser
03/29/2005US6873560 Optical memory device
03/29/2005US6873541 Nonvolatile memory programmble by a heat induced chemical reaction
03/29/2005US6873540 Molecular memory cell
03/29/2005US6873538 Programmable conductor random access memory and a method for writing thereto
03/29/2005US6872969 Non-volatile memory device and matrix display panel using the same
03/29/2005CA2429887C A ferroelectric memory circuit and method for its fabrication
03/24/2005WO2005027138A1 Light control apparatus and method for driving the same
03/24/2005WO2005027108A1 System for reading data stored on an information carrier
03/24/2005WO2005026957A2 Defect-tolerant and fault-tolerant circuit interconnections
03/24/2005WO2005010983A3 Memory cell and method for producing a memory
03/24/2005US20050063244 Field effect devices having a gate controlled via a nanotube switching element
03/24/2005US20050063210 Hybrid circuit having nanotube electromechanical memory
03/24/2005US20050062097 Method and system for molecular charge storage field effect transistor
03/24/2005US20050062070 Field effect devices having a source controlled via a nanotube switching element
03/24/2005US20050062062 One-time programmable, non-volatile field effect devices and methods of making same
03/24/2005US20050062035 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
03/23/2005CN1599927A Solid state microoptical electromechanical system for reading photonics diffractive memory
03/23/2005CN1599068A Phase transformation micro, nano electronic memory device and manufacturing method
03/22/2005US6870755 Re-writable memory with non-linear memory element
03/22/2005US6870751 Low-energy writing in cross-point array memory devices
03/22/2005US6870394 Controlled input molecular crossbar latch
03/22/2005US6870183 Stacked organic memory devices and methods of operating and fabricating
03/22/2005US6870180 Organic polarizable gate transistor apparatus and method
03/17/2005WO2005024839A1 Storage location having an ionic conduction storage mechanism and method for the production thereof
03/17/2005WO2004082362A3 Methods for extending amorphous photorefractive material lifetimes
03/17/2005US20050059210 Process for making bit selectable devices having elements made with nanotubes
03/17/2005US20050059187 Non-volatile memory structure
03/17/2005US20050059176 Process for making byte erasable devices having elements made with nanotubes
03/17/2005US20050058834 Nanotube films and articles
03/17/2005US20050058009 Memory devices based on electric field programmable films
03/17/2005US20050056910 Non-volatile memory structure
03/17/2005US20050056877 Nanotube-on-gate fet structures and applications
03/17/2005US20050056866 Circuit arrays having cells with combinations of transistors and nanotube switching elements
03/17/2005US20050056825 Field effect devices having a drain controlled via a nanotube switching element
03/17/2005DE10335813A1 IC-Chip mit Nanowires IC chip with nanowires
03/17/2005DE102004039977A1 Phase change memory cell programming method, involves heating memory cell to couple of temperatures, applying current to cell by current generating circuit, and causing circuit to apply reset and set pulses by controller
03/16/2005EP1514276A1 Data storage device
03/16/2005CN1596475A 非易失性存储器 Non-volatile memory
03/16/2005CN1193430C Vertical nanometer size transistor using carbon monometer tube and manufacturing method thereof
03/15/2005US6868025 Temperature compensated RRAM circuit
03/15/2005US6867996 Single-polarity programmable resistance-variable memory element
03/15/2005US6867988 Magnetic logic elements
03/15/2005US6867427 Molecular mechanical devices with a band gap change activated by an electric field for optical switching applications
03/10/2005WO2005022658A2 Compound comprising at least one memory unit consisting of an organic memory material, especially for using in cmos structures, semiconductor component, and method for producing a semiconductor component
03/10/2005US20050055387 Defect-tolerant and fault-tolerant circuit interconnections
03/10/2005US20050054849 Coordination sites of four nitrogen-containing groups of of imino, amido and amino groups, and has the nitrogen atoms of the four nitrogen-containing groups as coordinating atoms in one plane; metal complex assembly; acceptor and a donor interacting with each other; nanostructure; semiconductors
03/10/2005US20050054138 Method of fabricating trench isolated cross-point memory array
03/10/2005US20050054119 Buffered-layer memory cell
03/10/2005US20050053968 Method for storing information in DNA
03/10/2005US20050053928 Arrays for detecting nucleic acids
03/10/2005US20050052942 Trench isolated cross-point memory array
03/10/2005US20050052904 Initial firing method and phase change memory device for performing firing effectively
03/10/2005US20050052894 Uses of nanofabric-based electro-mechanical switches
03/10/2005US20050051805 Nanotube transistor device
03/09/2005EP1513159A2 Memory devices based on electric field programmable films
03/09/2005EP1346367B1 A ferroelectric memory circuit and method for its fabrication
03/09/2005CN1591592A Information recording apparatus, recording media and recording method
03/09/2005CN1192433C Ferro-electric storage read-write memory
03/08/2005US6865117 Programming circuit for a programmable microelectronic device, system including the circuit, and method of forming the same
03/08/2005US6864522 Memory device
03/08/2005US6864123 Memory device and manufacturing method therefor
03/03/2005US20050050258 High density data storage medium
03/03/2005US20050048691 High temperature attachment of organic molecules to substrates
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