Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
09/2005
09/22/2005US20050208537 Very large scale immobilized polymer synthesis
09/22/2005US20050208388 Optical recording layer; a polymer with photoisomerizable groups and a polymer in which photoisomerizable molecules are dispersed; recording a hologram by having optical anisotropy induced by irradiation; optical filters for reading, writing
09/22/2005US20050208387 Optical recording material, optical recording medium and optical recording/reproducing apparatus
09/22/2005US20050207265 Memory cell with an asymmetric crystalline structure
09/22/2005US20050207248 Shared bit line cross-point memory array manufacturing method
09/22/2005US20050207208 Situ patterning of electrolyte for molecular information storage devices
09/22/2005DE102004010464A1 Data-handling method for storing data and reproducing it with micro-fluid storage locations stores more data in the smallest space so as to transfer data in shortest time
09/21/2005EP1576397A1 Visual effect based on a micro-optical grid structure
09/21/2005EP1576144A2 Proteorhodopsin mutants with improved optical characteristics
09/21/2005EP1576042A2 Optical information carrier comprising immobilized proteorhodopsin
09/21/2005CN1672214A 互补位pcram感测放大器和操作方法 Complementary bit pcram sense amplifier and method of operation
09/21/2005CN1670979A Phase change memory cell on silicon-on insulator substrate
09/21/2005CN1670863A Organic-polymer memory element
09/20/2005US6947626 Optical cross-connect device
09/20/2005US6947363 Superresolution in periodic data storage media
09/20/2005US6947321 Organic thin-film switching memory device and memory device
09/20/2005US6947311 Two-dimensional structural transition controlled by an electric field, memory storage device thereof, and method of making a memory storage device
09/20/2005US6947205 Bistable molecular mechanical devices activated by an electric field for electronic ink and other visual display applications
09/20/2005US6946704 Semiconductor memory cell and method of forming same
09/20/2005US6946702 Resistance random access memory
09/20/2005US6946675 Microelectronic components and electronic networks comprising DNA
09/20/2005US6946347 Non-volatile memory structure
09/15/2005WO2005086256A1 Bottom electrode chemically-bonded langmuir-blodgett films via photolabile groups
09/15/2005WO2005084164A2 Nanotube-based switching elements and logic circuits
09/15/2005WO2005017967A3 Nanotube device structure and methods of fabrication
09/15/2005US20050201146 Method of refreshing a PCRAM memory device
09/15/2005US20050199731 Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
09/15/2005DE102004018859B3 Memory storage circuit e.g. for flip flop circuit for making available video or audio data for given length of time in terminal, has memory cell with PMC resistor having solid electrolyte material with write circuit
09/14/2005EP1575055A1 Cmis semiconductor nonvolatile storage circuit
09/14/2005EP1573729A1 Optical information record medium
09/14/2005CN1669091A Programming a phase-change material memory
09/13/2005US6944054 NRAM bit selectable two-device nanotube array
09/13/2005US6944050 Nonvolatile memory device
09/13/2005US6944047 Variable-persistence molecular memory devices and methods of operation thereof
09/13/2005US6944041 Circuit for accessing a chalcogenide memory array
09/13/2005US6943417 DNA-based memory device and method of reading and writing same
09/13/2005US6943395 Phase random access memory with high density
09/13/2005US6943370 Control of memory arrays utilizing zener diode-like devices
09/13/2005US6943054 Attachment of organic molecules to group III, IV or V substrates
09/13/2005US6942921 Nanotube films and articles
09/09/2005WO2005083689A1 Hologram search method and holographic recording/reproducing device
09/08/2005US20050198462 Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories
09/08/2005US20050195653 Novel method and structure for efficient data verification operation for non-volatile memories
09/08/2005US20050195640 Two-component, rectifying-junction memory element
09/08/2005US20050195634 Memory device
09/08/2005US20050195633 Method for programming phase-change memory array to set state and circuit of a phase-change memory device
09/08/2005US20050195632 Non-volatile memory with a single transistor and resistive memory element
09/08/2005US20050194628 Capacitor with conducting nanostructure
09/08/2005US20050194526 Bottom electrode chemically-bonded Langmuir-Blodgett films via photolabile groups
09/08/2005DE10393147T5 Fluideinschliessende Substrate für holographische Medien Fluideinschliessende substrates for holographic media
09/08/2005DE102004007633A1 Speicherbauelement-Elektrode mit Oberflächen-Struktur Memory device with electrode surface structure
09/08/2005DE102004004047B3 Resistiv arbeitender Speicher für Low-Voltage-Anwendungen Resistive working memory for low-voltage applications
09/07/2005EP1571673A2 Memory device
09/07/2005EP1570104A1 MOCVD FORMATION OF CU sb 2 /sb S
09/07/2005EP1434232A4 Memory cell
09/07/2005CN1666294A Holographic data storage media comprising an aluminum salt compound and an asymetric acrylate compound
09/07/2005CN1665030A 3d rram
09/07/2005CN1664957A Memory device
09/07/2005CN1664953A Phase-change memory device and method of writing a phase-change memory device
09/06/2005US6940745 Programmable microelectronic devices and methods of forming and programming same
09/06/2005US6940744 Adaptive programming technique for a re-writable conductive memory device
09/06/2005US6940113 Trench isolated cross-point memory array
09/01/2005US20050193356 Nanoscale interconnection interface
09/01/2005US20050191495 Nanotube films and articles
09/01/2005US20050190637 Quantum memory and information processing method using the same
09/01/2005DE102005004338A1 Phase-change random access memory cell device, has write driver control circuit coupled to address decoder to vary pulse width and pulse count of pulse currents according to load between write driver and cell selected by decoder
09/01/2005DE102004004863A1 Resistiv arbeitender Speicher Resistive working memory
08/2005
08/31/2005EP1569286A2 Bistable molecular switches and associated methods
08/31/2005EP1568087A1 Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cell
08/30/2005US6937505 Nonvolatile memory cell and nonvolatile semiconductor memory device
08/30/2005US6937379 Molecular architecture for molecular electro-optical transistor and switch
08/30/2005US6936545 Organic memory cell formation on Ag substrate
08/30/2005US6936233 Purifying a mixture of single-wall carbon nanotubes and amorphous carbon contaminate, by heating under oxidizing conditions to remove amorphous carbon
08/25/2005WO2005078819A1 Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed thereby
08/25/2005WO2005043541A3 Method and system for providing a programmable current source for a magnetic memory
08/25/2005US20050186737 Resistive memory for low-voltage applications
08/25/2005US20050185445 Semiconductor device
08/25/2005US20050185230 Hologram recording device and hologram reproduction device
08/25/2005DE102005004126A1 Magnetic RAM memory cell, has reference layer with magnetization oriented parallel to remnant magnetization that occurs when external magnetic field perpendicular to direction of intrinsic anisotropy of storage layer is applied
08/25/2005DE102004020575B3 Semiconductor memory in crosspoint architecture, includes chalcogenide glass forming memory cell with pn junction to bit line and electrode forming memory cell with word line
08/25/2005DE102004003843A1 Method for optical switching-, storage- and processing-techniques e.g. for storage- and communication systems, involves use of light spots as switching elements
08/24/2005EP1566810A2 Resistive memory device with stable writing
08/24/2005CN1658328A Semiconductor device
08/23/2005US6934424 E-field-modulated bistable molecular mechanical device
08/18/2005WO2005076355A1 Storage
08/18/2005WO2005076280A1 Semiconductor device
08/18/2005WO2004070566A3 Conductive-polymer electronic switch
08/18/2005US20050180300 Multichannel parallel recording and reading for hyper large bandpass photonics memory
08/18/2005US20050180195 Memory device using nano tube cell
08/18/2005US20050180194 Nano tube cell and memory device using the same
08/18/2005US20050180189 Memory device electrode with a surface structure
08/18/2005US20050179033 Memory cell, method for the production thereof and use of a composition therefor
08/18/2005US20050179029 Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed thereby
08/18/2005DE10297786T5 Programmierung eines Phasenübergangsmaterialspeichers Programming a phase change material storage
08/18/2005DE102004005062A1 Optical data storage in films of silver oxide using ultrashort laser pulses with local modification of silver oxide by irradiation film by laser pulses in FEM to 2nd range with wavelength in near infra red (IR) spectral range
08/17/2005EP1564747A1 Semiconductor memory device comprising simultaneous block activation means and method of testing semiconductor memory device
08/17/2005EP1290047B1 Copolymers for optical data storage
08/17/2005EP0981558B1 Homopolymers with high photoinduceable double refraction
08/17/2005EP0939957B1 Programmable metallization cell structure and method of making same
08/17/2005CN1656568A Data storage device
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