Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
01/2013
01/02/2013CN101457399B Erbium sodium ion double doped strontium molybdate laser crystal and preparation method thereof
01/02/2013CN101311385B Method for preparing bismuth sulfide whiskers and the bismuth sulfide whiskers
01/02/2013CN101113532B Laser and non-linear optical bismuth phosphate crystal and preparation and usage thereof
01/01/2013US8344417 Gallium nitride semiconductor structures with compositionally-graded transition layer
12/2012
12/27/2012WO2012177048A2 Apparatus for fabricating ingot and method for fabricating ingot
12/27/2012WO2012177012A2 Apparatus for fabricating ingot
12/27/2012WO2012176661A1 Group iii nitride semiconductor light-emitting element
12/27/2012WO2012176647A1 Apparatus for producing sic single crystal by solution growth method, method for producing sic single crystal using apparatus for producing sic single crystal by solution growth method, and crucible used in apparatus for producing sic single crystal by solution growth method
12/27/2012WO2012176370A1 Silicon wafer and method for manufacturing same
12/27/2012WO2012176318A1 Method for producing nitride single crystal and autoclave used therefor
12/27/2012WO2012174846A1 Borate birefringent crystal applicable to ultraviolet and deep ultraviolet, and growth method and application
12/27/2012WO2012134092A3 Method of manufacturing single crystal ingot, and single crystal ingot and wafer manufactured thereby
12/27/2012WO2011153994A8 Method for growing ii-vi semiconductor crystals and ii-vi semiconductor layers
12/27/2012DE102009016132B4 Verfahren zur Herstellung eines langen Volumeneinkristalls aus SiC oder AlN und langer Volumeneinkristall aus SiC oder AlN A method for producing a bulk single long SiC or AlN and SiC or AlN bulk single long
12/27/2012DE102006055038B4 Epitaxierte Halbleiterscheibe sowie Vorrichtung und Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe Epitaxially coated semiconductor wafer, as well as apparatus and method for producing an epitaxially coated semiconductor wafer,
12/27/2012DE102005029162B4 Solarzelle mit einer Whisker-Struktur und Verfahren zu deren Hestellung Solar cell having a whisker structure and methods for their operations department
12/27/2012CA2839868A1 Method for producing nitride single crystal and autoclave for use in the method
12/26/2012EP2538435A1 Epitaxial substrate and method for producing same
12/26/2012EP2538434A1 Epitaxial substrate and method for producing same
12/26/2012CN202626352U Ingot melting state detection device for polycrystalline silicon ingot furnace
12/26/2012CN202626351U Inlet gas impurity discharging device for polysilicon ingot furnace
12/26/2012CN202626350U Graphite crucible and single crystal furnace containing same
12/26/2012CN102844474A Epitaxial silicon carbide single-crystal substrate and method for producing the same
12/26/2012CN102842661A Epitaxial growth method for gallium-nitride-based (GaN-based) light-emitting diode (LED)
12/26/2012CN102839425A Synthesis method for calcium sulfate crystal whisker
12/26/2012CN102839424A Method for preparing potassium hexatitanate whisker
12/26/2012CN102839423A Infrared nonlinear optical crystal material MnTeMoO6 and growth method and application thereof
12/26/2012CN102839422A Preparation method for large-size dihydroxy lithium pentaborate crystal
12/26/2012CN102839421A Borate birefringent crystal for ultraviolet and deep ultraviolet, and growth method and application thereof
12/26/2012CN102839420A Crystallization apparatus, crystallization method, and heat treatment system
12/26/2012CN102839419A Silicon single crystal rod
12/26/2012CN102839418A Silicon single crystal rod
12/26/2012CN102839417A Method for growing self-stripping GaN thin film on sapphire substrate
12/26/2012CN102839416A Equipment and method for automatically segmenting direct-pull semiconductor silicon single crystal rods
12/26/2012CN102839415A Preparation method of gallium-doped single crystal silicon for solar cell
12/26/2012CN102839413A Method for preparing ultrathin layered K2Ti4O9 crystal whiskers
12/26/2012CN102839394A Method for rapidly preparing tree-like nano-iron with multi-level structure
12/26/2012CN102838093A LiGaGe2Se6 compound, LiGaGe2Se6 nonlinear optical crystals, and preparation method and application thereof
12/26/2012CN102251286B Micron/nanocone array of germanium and preparation method thereof
12/26/2012CN102230222B Preparation method of strontium carbonate whisker with high length-diameter (L-D) ratio
12/26/2012CN102206867B Preparation method of graphene single crystal plate
12/26/2012CN102181919B Method for controlling resistivity of head of Czochralski silicon
12/26/2012CN102140672B Double-cavity thermal field of crystal silicon ingot casting furnace and control method thereof
12/26/2012CN102102221B High-activity silver bromide sphaerocrystal and preparation method thereof
12/26/2012CN102080259B Three-stage thermal field of polysilicon ingot furnace
12/26/2012CN101994155B Nanophase doped bismuth telluride-based thermoelectric material and preparation method thereof
12/26/2012CN101748476B Special processing method for growing large-size high-quality BBO crystals
12/26/2012CN101532173B Rope support mechanism of single crystal furnace
12/26/2012CN101319390B Preparation method of leadless lutetium bismuth carbuncle thin film
12/26/2012CN101319360B 单晶金刚石 Single crystal diamond
12/26/2012CN101307501B Method for manufacturing low etch pit density (EPD) semi-insulating gallium arsenide wafer and the gallium arsenide wafer
12/25/2012US8337614 GaN single crystal substrate and method for processing surface of GaN single crystal substrate
12/22/2012CA2778082A1 Electrode and method for supplying current to a reactor
12/20/2012WO2012174410A1 Improved heteroepitaxial growth using ion implantation
12/20/2012WO2012173520A1 Method for growing an aln monocrystal and device for implementing same
12/20/2012WO2012173438A2 Apparatus for fabricating ingot
12/20/2012WO2012173409A2 Apparatus for fabricating ingot
12/20/2012WO2012173251A1 Apparatus and method for producing sic single crystal
12/20/2012WO2012172955A1 Silicon carbide substrate and method for manufacturing same
12/20/2012WO2012171486A1 Methods of rapid preparation of silver nanowires with high aspect ratio
12/20/2012WO2012171308A1 Method for cast production of quasi-monocrystalline silicon
12/20/2012WO2011139406A9 Gas-lift pumps for flowing and purifying molten silicon
12/20/2012US20120319054 Semiconductor nanocrystals heterostructures
12/20/2012DE102011118364B3 Verfahren zum Ätzen und Halbleiterbauelement A method of etching semiconductor component and
12/20/2012DE102009016137B4 Herstellungsverfahren für einen versetzungsarmen AlN-Volumeneinkristall und versetzungsarmes einkristallines AlN-Substrat Production process for a low-dislocation AlN bulk single and low dislocation single crystal AlN substrate
12/20/2012DE102009016133B4 Herstellungsverfahren für einen sauerstoffarmen AlN-Volumeneinkristall Method for producing a low-oxygen AlN bulk single
12/20/2012DE102009016131B4 Herstellungsverfahren für einen SiC-Volumeneinkristall mittels einer Gasbarriere und versetzungsarmes einkristallines SiC-Substrat Manufacturing method of a SiC bulk single crystal by means of a gas barrier and low dislocation single crystal SiC substrate
12/19/2012EP2535444A1 Method for producing silicon carbide crystal and silicon carbide crystal
12/19/2012EP2535440A1 Chemical vapor deposition apparatus
12/19/2012EP2534283A1 Apparatus and method for the production of semiconductor material foils
12/19/2012EP2534094A2 Induction for thermochemical processes, and associated systems and methods
12/19/2012EP2533975A2 Architectural construct having for example a plurality of architectural crystals
12/19/2012CN202610395U Seed crystal holding device
12/19/2012CN202610394U Sapphire wafer
12/19/2012CN202610393U Heat preserving device for sapphire crystal growth furnace
12/19/2012CN202610392U Energy-saving device of sapphire crystal growing furnace
12/19/2012CN202610391U Sapphire crystal growth furnace
12/19/2012CN202610390U Monocrystalline silicon rod
12/19/2012CN202610386U Sapphire crystal growing device using Kyropoulos method
12/19/2012CN202610385U Sapphire crystal growth equipment
12/19/2012CN202610383U Adjustable sealing device used for sapphire growth
12/19/2012CN202610382U Seed crystal holder for preparation of monocrystalline silicon by czochralski technique
12/19/2012CN202610381U Thermal field lifting device of Czochralski silicon single crystal furnace
12/19/2012CN202610380U Thermal field lifting device of Czochralski single crystal furnace
12/19/2012CN202610310U Ultrasonic wave auxiliary water-bath vacuum physical vapor deposition (PVD) thick film system device
12/19/2012CN1896339B Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties
12/19/2012CN102834926A Method for manufacturing solar cell using silicon powder
12/19/2012CN102834554A Garnet-type single crystal, optical isolator, and optical processor
12/19/2012CN102834553A Apparatus and method for the production of semiconductor material foils
12/19/2012CN102834354A Manufacturing method for polycrystalline silicon ingot, and polycrystalline silicon ingot
12/19/2012CN102828251A Method for preparing aluminum nitride single crystal material
12/19/2012CN102828250A Growing method for GaN nanowire
12/19/2012CN102828249A Method for preparing monocrystalline silicon carbide nano-wires on flexible carbon fiber substrate
12/19/2012CN102828248A Vanadium niobic acid yttrium calcium single crystal and preparation method thereof
12/19/2012CN102828247A Preparation method of erbium-doped calcium yttrium aluminate laser crystal
12/19/2012CN102828246A NaSr3Be3B3O9F4 nonlinear optical crystal, its growth method and application thereof
12/19/2012CN102828245A NaCaBe2B2O6 nonlinear optical crystal, its growth method and application thereof
12/19/2012CN102828244A Layer-number-controllable graphite film based on nickel-copper composite substrate and preparation method of film
12/19/2012CN102828243A Germanium-tin co-doped monocrystalline silicon for solar cell and method for preparing same
12/19/2012CN102828242A Crystalline silicon with lower converting lighting quantum dots and preparation method thereof
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