Patents for C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247)
05/2001
05/22/2001US6235668 Making crystalline magnesium orthosilicate
05/22/2001US6235109 Method of preparing crystalline or amorphose material from melt
05/16/2001EP1099770A1 High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same
05/16/2001CN1295140A Semi-spiral crystal selector
05/15/2001US6231744 Process for fabricating an array of nanowires
05/15/2001CA2232777C Method for producing silicon for use in solar cells
05/02/2001EP0775030B1 Method and device for directionally solidifiying a melt
05/02/2001CN1065288C Scintillation material on base of cesium iodide and method for its preparation
04/2001
04/25/2001EP1094135A1 Process for producing heat-resistant intermetallic compound Ni3Al foil and product foil obtained
04/25/2001EP1093872A1 Controlling grain spacing in directional solidified castings
04/19/2001WO2001027359A1 Crystal growing device and method of manufacturing single crystal
04/18/2001CN1291965A Method and apparatus for preparing crystal of cremated remains
04/12/2001WO2001025001A1 Beads of polycrystalline alkali-metal or alkaline-earth metal fluoride, their preparation and their use
04/04/2001EP1088911A1 Continuous crystal plate growth process and apparatus
03/2001
03/29/2001WO1999058925A8 Cantilever with whisker-grown probe and method for producing thereof
03/21/2001EP1085112A2 Method of fabricating a single crystal
03/21/2001EP0931184B1 Process for actively controlling defects during gaas crystal growth
03/14/2001CN1287575A High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same
03/13/2001US6200385 Crucible for growing macrocrystals
03/08/2001WO2001016412A1 Floating/melting using dummy micro-gravitational field by magnetic force
03/06/2001US6198530 Organic crystalline films for optical applications and related methods of fabrication
02/2001
02/21/2001CN1284573A Crystal growth container and method
02/21/2001CN1062318C Alumoberyl family decorative jewel growth method and device
02/21/2001CN1062317C Vertical temp gradient process for growing crystal of lithium aluminate and gallium
02/14/2001EP1076119A1 Apparatus and method for manufacture a directionally solidified columnar grained article
02/14/2001EP1076118A1 Method and an apparatus for casting a directionally solidified article
02/14/2001EP1076117A2 Crystal growth apparatus employing embedded purification chamber
02/14/2001CN1284146A Flushable fiber structure
02/08/2001WO2001009403A1 High-temperature part and method for producing the same
02/08/2001DE19934940A1 Vorrichtung zum Herstellen von gerichtet erstarrten Blöcken und Betriebsverfahren hierfür Apparatus for producing directionally solidified blocks and operating method therefor
02/07/2001EP1074641A1 Crystal growth vessel and crystal growth method
02/07/2001CN1061704C Method for preparing monocrystal of nickel-aluminium based metal material
01/2001
01/31/2001EP1072696A1 Apparatus and method of operation for producing directionally solidified ingots
01/30/2001US6180269 GaAs single crystal substrate and epitaxial wafer using the same
01/30/2001US6179914 Dopant delivery system and method
01/25/2001WO2001006042A1 Method for single crystal growth of barium titanate and barium titanate solid solution
01/24/2001EP1070561A1 Floating insulating baffle for high gradient casting
01/24/2001CN1061123C Blade for gas turbine, manufacturing method of same, and gas turbine including blade
01/23/2001US6176924 Transparent multi-zone crystal growth furnace and method for controlling the same
01/17/2001CN1280648A Turbine components with skin bonded to substrates
01/10/2001CN1279732A Charge for vertical boat growth process and use thereof
01/10/2001CN1060542C Growth technology of thallium doped cesium iodide grystal by antivacuum fall
01/09/2001US6171390 Method for preparing oxide single crystalline materials
01/09/2001US6171389 Methods of producing doped semiconductors
01/04/2001WO2001000908A1 Heater arrangement for crystal growth furnace
01/03/2001EP1065026A1 Method for manufacturing or repairing cooling channels in single crystal gas turbine components
12/2000
12/27/2000CN1278200A Method of bonding cast superalloys
12/27/2000CN1278199A Turbine blades made from multiple signle crystasl cast superalloy segments
12/26/2000US6165425 A quartz, graphite or a ceramic melting pot having a silicon nitride protective layer for avoiding adhesion between the melting pot and silicon melts
12/14/2000WO2000075697A1 Fluoride lens crystal for optical microlithography systems
12/14/2000WO2000075405A1 Crystal growth and annealing method and apparatus
11/2000
11/28/2000US6153011 Continuous crystal plate growth process and apparatus
11/28/2000US6153007 Method of manufacturing a single crystal and apparatus for manufacturing single crystal
11/21/2000US6149748 Method of manufacturing large crystal bodies
11/15/2000EP1052312A1 Melt-infiltration process for fabricating article exhibiting substantial three-dimensional order and resultant article
11/14/2000CA2307481A1 Melt-infiltration process for fabricating article exhibiting substantial three-dimensional order and resultant article
11/08/2000EP1049820A1 Method for epitaxial growth on a substrate
11/08/2000EP1049813A1 T proced
11/08/2000EP1049562A2 Turbine blades made from multiple single crystal cast superalloy segments
11/08/2000EP1049561A2 Turbine components comprising thin skins bonded to superalloy substrates
11/07/2000US6143070 Zone melting process modified with the addition of calcium chloride which acts as a liquid encapsulant at temperatures above 660 degrees c so that crystal can grow without sticking to container
11/02/2000EP1048759A1 Horizontal directional solidification
11/02/2000EP1048758A1 Method for producing crystalline silicon
10/2000
10/31/2000US6139627 Transparent multi-zone crystal growth furnace and method for controlling the same
10/25/2000CN1271465A Method and device for producing a wafer from semiconducting material
10/24/2000US6136091 Process and apparatus for producing polycrystalline semiconductor ingot
10/17/2000US6132508 Device and method for liquefying and crystallizing substances
10/11/2000EP1042543A1 Device for measuring and controlling the solidification of an electrically conductive material
10/10/2000US6130143 Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate
10/10/2000US6130142 Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate
10/04/2000EP1040212A1 Charge for vertical boat growth process and use thereof
09/2000
09/28/2000WO2000056954A1 Device for producing single crystals
09/28/2000DE19957831A1 Polycrystalline semiconductor wafers, especially polycrystalline silicon wafers for solar cells, are produced by rapid closure of hot pressing jaws onto accurately dosed molten semiconductor material
09/28/2000DE19912486A1 Verfahren und Vorrichtung zur Herstellung von Einkristallen sowie Kristallkeim Method and apparatus for production of single crystals and seed crystal
09/28/2000DE19912484A1 Vorrichtung zur Herstellung von Einkristallen An apparatus for producing single crystals
09/27/2000EP1038995A1 Process and apparatus for producing single crystals
09/26/2000US6123764 Degassing calcium fluoride powder particles to desorb impurities from surfaces; preprocessing degassed calcium fluoride powder particles by fusing degassed calcium fluoride powder particles in crucible; refusing to grow single crystals
09/20/2000EP1036850A1 Ni-BASED SINGLE CRYSTAL ALLOY HAVING COATING FILM FOR PREVENTING RECRYSTALLIZATION FRACTURE
09/19/2000US6120602 Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced
09/08/2000WO2000051761A1 Method and apparatus for production of a cast component
09/08/2000CA2714871A1 Method and apparatus for production of a cast component
09/08/2000CA2663076A1 Method and apparatus for production of a cast component
08/2000
08/30/2000EP0914484B1 Nickel-base superalloy
08/29/2000US6110274 Process and apparatus for producing polycrystalline semiconductor
08/23/2000EP0914483B1 Nickel-base superalloy
08/22/2000US6106966 Used for electrolytic and fuel-cell applications
08/22/2000US6106739 Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced
08/22/2000US6106614 Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced
08/15/2000US6103402 The power density is reduced and the interaction time is increased, which allows for a significant increase in temperature of the substrate immediately adjacent the molten pool at the time that solidifiction occurs, reduces cracking
08/02/2000CN1055142C Process for preparing nickel-aluminium base alloy single crystal
08/01/2000US6097088 Thermoelectric element and cooling or heating device provided with the same
08/01/2000US6096128 Silicon crystal, and device and method for manufacturing same
07/2000
07/26/2000EP1022772A1 CdTe CRYSTAL OR CdZnTe CRYSTAL AND METHOD FOR PREPARING THE SAME
07/26/2000EP1022362A2 Apparatus and process for producing crystal article
07/26/2000EP1021838A1 Method and device for producing a wafer from a semiconducting material
07/25/2000US6093245 Method for growing crystal
07/20/2000WO2000024040A3 Conductive isostructural compounds
07/19/2000EP1020245A2 Method and apparatus for producing a gas turbine blade by means of directional solidification of a melt
07/18/2000US6090361 Method for producing silicon for use in solar cells
07/18/2000US6090201 Piston-activated crystal-growing apparatus
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