Patents for C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247)
02/2002
02/05/2002US6343641 Controlling casting grain spacing
01/2002
01/31/2002US20020011202 Crystal growth and annealing method and apparatus
01/30/2002CN1078621C Nickel-base superalloy
01/29/2002US6342312 Calcium fluoride crystal, optical article and exposure apparatus for photo-lithography using the same
01/24/2002WO2002007244A1 Single crystal electrolyte for fuel cells
01/24/2002WO2002006569A1 Crystalline product having free surface of grown crystal and method for producing the same
01/24/2002US20020007778 Single crystal seed alloy
01/24/2002DE10033688A1 Producing a rigid cast part used as gas turbine blade comprises connecting the overhang or cross-section extension with a single crystal guide or a transition piece with a single crystal starter or another suitable site of the cast part
01/17/2002US20020005519 Crystalline silicon semiconductor device and method for fabricating same
01/17/2002US20020005265 Crystal selector pattern
01/03/2002US20020000541 Optical parametric oscillator which is provided with the crystal; chemical formula CsLiB6O10, and alkali or alkaline earth metal substituted cesium lithium borate crystals
01/02/2002EP1167586A1 Process for crystal growth with a magnetic field
01/02/2002EP1049562A4 Turbine blades made from multiple single crystal cast superalloy segments
01/02/2002EP1049561A4 Turbine components comprising thin skins bonded to superalloy substrates
01/01/2002US6334899 Continuous crystal plate growth apparatus
01/01/2002US6334897 Method of manufacturing compound semiconductor single crystal
01/01/2002US6334603 Mold for producing silicon ingot and method for fabricating the same
12/2001
12/26/2001CN1328634A Cantilever with whisker-grown probe and method for producing thereof
12/20/2001US20010053748 Non-superconductive phases finely dispersed in rare earth, barium and copper oxide phases of different peritectic temperatures are laminated three-dimensionally, seed crystals
12/20/2001US20010052315 Crystallogenesis method with magnetic field
12/19/2001EP0986655B1 THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS
12/18/2001US6331217 Turbine blades made from multiple single crystal cast superalloy segments
12/13/2001WO2000034552A9 Single crystal processing by in-situ seed injection
12/12/2001EP1162290A1 Process and apparatus for melting and solidifying metals and semi-metals in a crucible
12/06/2001WO2001092608A2 Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same
12/06/2001WO2001064975A3 Method and device for growing large-volume oriented monocrystals
12/04/2001US6325871 Method of bonding cast superalloys
12/04/2001US6325849 P-type gaas single crystal and method for manufacturing the same
11/2001
11/29/2001US20010046091 Fluoride crystalline optical lithography lens element blank
11/20/2001US6319314 Method and device for manufacturing spherical semiconductor crystals
11/15/2001WO2001086032A1 Fluoride crystalline optical lithography lens element blank
11/14/2001EP1154047A1 Apparatus for the continuous fabrication of a polycrystalline silicon ingot
11/14/2001EP1154046A1 Fluoride crystalline optical lithography lens element blank
11/14/2001EP1153681A1 System for casting a metal article using a fluidized bed
11/14/2001EP1152848A1 Method and apparatus for production of a cast component
11/07/2001CN1074470C Method for preparing NiAl single crystal
11/06/2001US6312617 Conductive isostructural compounds
11/06/2001US6311760 Method and apparatus for casting directionally solidified article
11/01/2001US20010035123 Mixed oxide
10/2001
10/31/2001EP1149191A1 Single crystal processing by in-situ seed injection
10/30/2001US6309461 Crystal growth and annealing method and apparatus
10/24/2001EP1147248A1 Device for producing single crystals
10/23/2001US6306734 Method and apparatus for growing oriented whisker arrays
10/18/2001WO2001077036A1 Porous wall for forming a levitation gas film
10/10/2001EP1143040A1 Crystal growing device and method of manufacturing single crystal
10/09/2001US6299682 Method for producing silicon ingot having directional solidification structure and apparatus for producing the same
10/09/2001US6299680 Cadmium telluride or cadmium zinc telluride crystal with no observable cadmium or tellurium deposits, reduced etch pit density, reduced full-width-half-maximum value of double crystal x-ray rocking curve
10/04/2001WO2001073168A1 PROCESS AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY OF CaF¿2?
10/04/2001US20010026769 High strength at high temperature; corrosion resistance; useful as turbine blades or vanes for jet engines and gas turbines
10/04/2001DE10111778A1 Large superconductor-intermediate product comprises a structure with a finely divided phase with different peritectic temperatures, seed crystals arranged on an oxidic superconductor layer, and excluded phases
10/02/2001US6296784 Optical parametric oscillators
09/2001
09/20/2001WO2001068957A1 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals
09/20/2001WO2001068956A1 Crystal growth device and method
09/18/2001US6290773 Method and apparatus for fabricating single crystal
09/13/2001US20010020441 Single crystal-manufacturing equipment and a method for manufacturing the same
09/13/2001DE10010484A1 Device for growing large volume single crystals has heating element arranged on side walls of melt crucible to prevent lateral radial heat flow
09/11/2001US6287478 Group 3,4 or 5 intermetallic
09/11/2001US6287381 Crystal growth process for large area GaAs with controllable resistivity and infrared window/dome with EMI-EMP protection formed therefrom
09/07/2001WO2001064975A2 Method and device for growing large-volume oriented monocrystals
09/06/2001US20010018892 Apparatus for fabricating single crystal
09/06/2001DE10105986A1 Semiconductor arrangement used in a solar cell comprises a polycrystalline silicon layer formed by heat treating an amorphous silicon layer in the presence of a metallic catalyst
09/05/2001EP1129473A2 Conductive isostructural compounds
09/05/2001CN1311524A Crystal silicon semiconductor device and its mfg. method
09/05/2001CN1070542C Process for bulk crystal growth
08/2001
08/30/2001WO2001063021A1 Method for single crystal growth of perovskite oxides
08/29/2001EP1127964A1 Floating/melting using dummy micro-gravitational field by magnetic force
08/21/2001US6277500 Superalloy
08/21/2001US6277351 Crucible for growing macrocrystals
08/21/2001US6277297 Optical window composition
08/21/2001CA2230323C Method for producing monocrystalline structures
08/14/2001US6273969 Alloys and methods for their preparation
08/14/2001US6273948 Method of fabrication of highly resistive GaN bulk crystals
08/14/2001US6273947 Method of preparing a compound semiconductor crystal
08/09/2001US20010012547 Raw material for production of GaAs crystals
08/07/2001US6270571 By depositing a material other than titanium on the surface of a base containing titanium and thermally treating in titanium-oxidation atmosphere; high crystallinity; whiskers; use in photoelectric transducers, photocatalytic devices
08/07/2001US6270570 Fluoride crystal, optical article, and production method
08/01/2001CN1305952A Method for removing templat agent from synthetic zeolite
07/2001
07/25/2001EP0981657B1 Device for solidification and continuous control of crystal growth
07/24/2001US6264742 Single crystal processing by in-situ seed injection
07/24/2001US6263951 Horizontal rotating directional solidification
07/19/2001US20010008540 Calcium flouride crystal, optical article and exposure apparatus for photo-lithography using the same
07/19/2001US20010008115 Semiconductor crystal, and method and apparatus of production thereof
07/18/2001EP0963464B1 Melting pot with silicon protective layers, method for applying said layer and the use thereof
07/12/2001US20010007239 Process for producing compound semiconductor single crystal
07/11/2001EP1114884A1 Process for producing compound semiconductor single crystal
07/10/2001US6257311 Horizontal directional solidification
07/05/2001US20010006040 Method of preparing a compound semiconductor crystal
07/03/2001US6256521 Multi-domained bulk superconductors with strongly linked low-angle boundaries prepared by heating to decompose the precursor but not to decompose the seed crystals positioned to have a specific misorientation; then gradually cooling
07/03/2001US6254677 Semiconductor crystal, and method and apparatus of production thereof
07/03/2001US6254674 Method of controllably delivering dopant by limiting the release rate of dopant from a submerged vessel
06/2001
06/27/2001EP0843748B1 Method of producing crystalline layers
06/21/2001WO2001044543A1 Polycrystalline material, method for the production thereof and articles made therefrom
06/12/2001US6246029 High temperature semiconductor crystal growing furnace component cleaning method
06/07/2001DE10057413A1 Verfahren zur direkten Synthese von Indiumphosphid A process for the direct synthesis of indium phosphide
06/05/2001US6241820 Single crystal-manufacturing equipment and a method for manufacturing the same
05/2001
05/31/2001US20010001943 Methods of producing doped semiconductors
05/30/2001EP1102961A2 Cantilever with whisker-grown probe and method for producing thereof
05/29/2001US6238479 Heating fluoride raw material in reactive gas atmosphere below the fluoride melting point, then melting fluoride under a vacuum or inert gas atmosphere, cooling, crystallization of fluoride single crystal
05/24/2001US20010001415 Method and apparatus for making directional solidification castings
05/24/2001US20010001383 Producing fluoride crystal via adding scavenger to calcium fluoride raw material and refining, then growing a crystal by using a crucible lowering method; excimer lasers
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