| Patents for C09K 13 - Etching, surface-brightening or pickling compositions (3,392) |
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| 10/11/2001 | WO2001075955A1 Fluorinated solvent compositions containing hydrogen fluoride |
| 10/11/2001 | US20010027798 Ozone as oxidizing agent |
| 10/04/2001 | EP1138069A2 Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| 10/04/2001 | EP1138068A1 Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| 10/04/2001 | EP0863884B1 Process for preparing bis-alkoxy-triazinyl-amino-containing stilbene disulphonic acids or their derivatives |
| 09/19/2001 | EP1003615A4 Method for passivation of a metallization layer |
| 09/13/2001 | US20010020348 Particle with a functional group capable of trapping a metal ion, an oxidizing agent and water for chemical mechanical polishing of a copper-based metal |
| 09/04/2001 | US6284721 Mixture of acid, nitrate and fluoride |
| 08/29/2001 | EP1127370A4 Post etch cleaning composition and process for dual damascene system |
| 08/29/2001 | EP1127370A1 Post etch cleaning composition and process for dual damascene system |
| 08/28/2001 | US6280651 Can etch different types of silicon oxide at different relative etch rates |
| 08/23/2001 | US20010016469 Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| 08/23/2001 | US20010016425 Semiconductor processing methods, methods of forming hemispherical grain polysilicon, methods of forming capacitors, and methods of forming wordlines |
| 08/22/2001 | EP1124912A1 A chemical mechanical polishing slurry system having an activator solution |
| 08/21/2001 | US6276996 Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| 08/16/2001 | EP1123956A1 Aqueous dispersion for chemical mechanical polishing |
| 08/14/2001 | US6273786 Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| 08/09/2001 | WO2001057921A1 Etching solution and method |
| 08/07/2001 | US6270688 Chemical polishing of barium strontium titanate |
| 07/19/2001 | US20010008141 Method for pickling metallic surface, pickling solutions therefor, and process for regenerating spent pickling solutions |
| 07/18/2001 | EP1115804A1 Polishing liquid for polishing components, preferably wafers, especially for chemically-mechanically polishing components of this type |
| 07/18/2001 | CN1304439A Method and apparatus for cleaning semiconductor substrates after polishing of copper film |
| 07/12/2001 | WO2001049805A1 Method for roughening copper surfaces for bonding to substrates |
| 07/05/2001 | WO2001011673A3 Method for etching oxide films containing bismuth |
| 07/05/2001 | US20010006246 Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made using the method |
| 07/04/2001 | EP1062682A4 Selective silicon oxide etchant formulation including fluoride salt, chelating agent and glycol solvent |
| 07/04/2001 | CN1301992A Leveling method |
| 07/03/2001 | US6254796 Selective etching of silicate |
| 06/28/2001 | WO2001047032A1 Method for raw etching silicon solar cells |
| 06/28/2001 | DE19962136A1 Etching mixture used in production of structured surfaces on multi-crystalline, tri-crystalline and monocrystalline silicon surfaces of solar cells contains hydrofluoric acid and mineral acids selected from nitric acid |
| 06/28/2001 | CA2395265A1 Process for the rough-etching of silicon solar cells |
| 06/27/2001 | CN1300812A 擦洗组合物 Scrub composition |
| 06/20/2001 | EP1108773A1 Composition for roughening glass, etching bath, process for roughening glass and roughened objects |
| 06/20/2001 | CN1299786A Composition for etching glass, glass-etching liquid and method, and etching product thereof |
| 06/19/2001 | US6248887 Etherification of chloro derivative with a c 1-4 alkanol |
| 06/06/2001 | CN2433256Y Pressure convection thermostatic multifunction etching machine |
| 06/05/2001 | US6241912 Sheet metal deformation brightener composition |
| 05/31/2001 | US20010002015 Such as masked tin oxide, with a metal and an etch liquid containing an acid (such as hydrochloric acid) and a metal penetration control agent (such as nickel chloride) so that the tin oxide is reduced to metallic tin |
| 05/25/2001 | WO2001036578A1 Non-corrosive cleaning composition for removing plasma etching residues |
| 05/24/2001 | US20010001785 A cleaning composition for removing plasma etch residues formed on a substrate which comprises water, atleast one hydroxylammonium inorganic or organic compound, a basic compound and an organic carboxyllic acid |
| 05/23/2001 | CN1296049A Compositions for chemical-mechanical polishing |
| 05/22/2001 | US6235145 Containing hydrofluoric acid and etch reducing component of tetraalkylammonium hydroxide |
| 05/15/2001 | US6232228 Formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. |
| 05/02/2001 | EP1096556A1 Chemical-mechanical planarisation of copper |
| 05/01/2001 | US6224785 Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates |
| 04/26/2001 | WO2000058208A3 Method for producing high-purity solutions using gaseous hydrogen fluoride |
| 04/25/2001 | CN1064986C Composition for cleaning and etching electronic display and substrate |
| 04/18/2001 | CN1291787A Cleaning agent for semiconductor device and manufacturing method of semiconductor device |
| 04/17/2001 | US6218022 Resin etching solution and process for etching polyimide resins |
| 04/05/2001 | WO2001024234A2 A method for cleaning and treating a semiconductor wafer after chemical mechanical polishing |
| 03/28/2001 | EP1086191A1 Methods and apparatus for cleaning semiconductor substrates after polishing of copper film |
| 03/28/2001 | CN1288931A Preparation of asphalt soaker resulting in high charcoal yield |
| 03/27/2001 | US6206756 Using an acidic solution containing a tungsten oxidizing component, also contains a complexing agent to complex tungsten or oxidation product thereof. |
| 03/21/2001 | EP1085067A1 Polishing composition and polishing process |
| 03/07/2001 | EP1081200A1 Aqueous dispersion composition for chemical mechanical polishing for use in manufacture of semiconductor devices |
| 03/01/2001 | WO2001014463A1 Etchant composition for polyimide resin and method of etching |
| 02/28/2001 | CN1285384A Process for preparation of metal oxide slurry adaptable to chemical-mechanical polishing of semiconductor |
| 02/27/2001 | US6194365 Composition for cleaning and etching electronic display and substrate |
| 02/27/2001 | US6193901 Method for etching |
| 02/21/2001 | EP1077241A2 Composition for use in a chemical-mechanical planarization process |
| 02/21/2001 | CN1284535A Production process of resin for soaking copper-coated panel |
| 02/15/2001 | WO2001011673A2 Method for etching oxide films containing bismuth |
| 02/08/2001 | WO2001009935A1 Etching solution, containing hydrofluoric acid |
| 02/01/2001 | DE19935446A1 Ätzlösung, Flußsäure enthaltend Etching solution of hydrofluoric acid containing |
| 01/30/2001 | US6180021 Method for etching |
| 01/24/2001 | EP1071121A1 Process for the formation of a collar oxide in a trench in a semiconductor substrate |
| 01/16/2001 | US6174452 Masked tin oxide films are etched with an etchant composed of zinc metal, hydrochloric acid, and a penetration control agent; the exposed metal oxide film is reduced to metallic tin by the action of active hydrogen produced in the reaction |
| 01/04/2001 | DE19937503C1 Etching oxide films of a ferroelectric bismuth-containing mixed oxide comprises applying an oxide film to a substrate, contacting with an etching solution, and removing the etching solution |
| 01/02/2001 | US6169037 Comprising contacting a surface with a liquid solution comprising at least one fluorine-containing species and a temperature of at least about 40.degree. c |
| 12/28/2000 | WO2000079617A1 Aligned polymers for an organic tft |
| 12/28/2000 | CA2374236A1 Aligned polymers for an organic tft |
| 12/27/2000 | EP1062682A1 Selective silicon oxide etchant formulation including fluoride salt, chelating agent and glycol solvent |
| 12/19/2000 | US6162370 Consisting essentially of phosphoric acid and hexafluorosilicic acid |
| 12/19/2000 | US6162268 Mixture; controlling particle size |
| 12/12/2000 | US6159858 Slurry containing manganese oxide and a fabrication process of a semiconductor device using such a slurry |
| 12/12/2000 | US6159076 A slurry for polishing a surface comprising a liquid phase, an abrasive comprising silica and a ligand of an element contained in the surface which is bonded with ion or atom of the element to form chelate compound |
| 11/29/2000 | EP1055016A1 Method for etching |
| 11/14/2000 | US6147042 Detergent for processes for producing semiconductor devices or producing liquid crystal devices |
| 11/08/2000 | EP1050568A1 Polishing slurry |
| 11/08/2000 | CN1272519A Composite for mechanochemical polishing polymer insulating material layer with low dielectric constant |
| 11/01/2000 | CN1272221A Polishing composition including inhibitor of tungsten etching |
| 10/31/2000 | US6140233 Method of manufacturing semiconductor devices, etching compositions for manufacturing semiconductor devices, and semiconductor devices thereby |
| 10/31/2000 | US6139762 Contacting the substrate with a first solution, and thereafter contacting with a second aqueous solution comprising paramagnate salt, the ph of first and second etchant is around 13, and free of added hydroxide |
| 10/25/2000 | EP1046690A1 Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constant |
| 10/25/2000 | CN1270981A Efficient asphalt soaker and its preparation |
| 10/24/2000 | US6136711 Polishing composition including an inhibitor of tungsten etching |
| 10/12/2000 | WO2000028586A3 Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| 10/10/2000 | CA1341111C Water-hardening polymer preparation |
| 10/05/2000 | WO2000058208A2 Method for producing high-purity solutions using gaseous hydrogen fluoride |
| 10/05/2000 | DE19914243A1 Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff A method for producing high purity solutions using gaseous hydrogen fluoride |
| 10/05/2000 | CA2368441A1 Method for producing high-purity solutions using gaseous hydrogen fluoride |
| 09/20/2000 | EP1037513A2 Micro-etch solution for producing metal surface topography |
| 09/12/2000 | US6117783 The chemical and mechanical polishing solution comprises a hydroxylamine compound and octyphenyl polyethylene |
| 09/05/2000 | US6114249 Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity |
| 08/08/2000 | US6099748 Silicon wafer etching method and silicon wafer etchant |
| 07/18/2000 | US6090721 Aqueous solutions of ammonium fluoride in propylene glycol and their use in the removal of etch residues from silicon substrates |
| 07/06/2000 | WO2000039844A1 Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same |
| 07/06/2000 | WO2000039843A1 Cmp abrasive, liquid additive for cmp abrasive and method for polishing substrate |
| 07/04/2000 | US6083849 Methods of forming hemispherical grain polysilicon |
| 07/04/2000 | US6083419 Polishing composition including an inhibitor of tungsten etching |