| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 10/23/2013 | CN203249045U Light source of LED lamp |
| 10/23/2013 | CN103370803A Illumination device |
| 10/23/2013 | CN103370802A Light-receiving module for semiconductor light-emitting element and inspection device for semiconductor light-emitting element |
| 10/23/2013 | CN103370779A Carrier substrate and method for producing semiconductor chips |
| 10/23/2013 | CN103370640A Method of manufacturing an improved optical layer for a light emitting device with surface nano-micro texturation based on coherent electromagnetic radiation speckle lithography |
| 10/23/2013 | CN103369839A Method of manufacturing substrate for LED module and substrate for LED module manufactured by the same |
| 10/23/2013 | CN103367828A Self-cooling device and preparation method thereof |
| 10/23/2013 | CN103367657A Illumination device |
| 10/23/2013 | CN103367623A Light-emitting device and manufacturing method thereof |
| 10/23/2013 | CN103367622A Full-angle luminous LED (light emitting diode) support frame as well as LED lamp post comprising support frame and preparation method of LED lamp post |
| 10/23/2013 | CN103367621A Light emitting device package |
| 10/23/2013 | CN103367620A 发光二极管及其制造方法 The method of manufacturing a light emitting diode and |
| 10/23/2013 | CN103367619A Metal support structure and the light emitting diode structure |
| 10/23/2013 | CN103367618A Semiconductor luminous chip with reflective layer |
| 10/23/2013 | CN103367617A Broadband dielectric reflectors for LED |
| 10/23/2013 | CN103367616A COB (Chip on Board) packaged LED (Light-Emitting Diode) module and manufacturing process thereof |
| 10/23/2013 | CN103367615A Molded package and light emitting device employing same |
| 10/23/2013 | CN103367614A Light-emitting diode packaging structure and manufacture method thereof |
| 10/23/2013 | CN103367613A Method for preparing white light source with dual-band-gap photonic crystals |
| 10/23/2013 | CN103367612A LED (Light Emitting Diode) packaging structure and process |
| 10/23/2013 | CN103367611A Wave-length conversion inorganic member, method for manufacturing the same and illuminating device |
| 10/23/2013 | CN103367610A High-voltage LED chip and production method thereof |
| 10/23/2013 | CN103367609A Low space color cast LED packaging structure |
| 10/23/2013 | CN103367608A LED (light-emitting diode) inversion process capable of improving light extraction efficiency |
| 10/23/2013 | CN103367607A Method for packaging LED light source |
| 10/23/2013 | CN103367606A Method for manufacturing light emitting diode chip |
| 10/23/2013 | CN103367605A Thin-film LED (Light-Emitting Diode) device and manufacturing method thereof |
| 10/23/2013 | CN103367604A Light-emitting component |
| 10/23/2013 | CN103367603A Substrate for optical semiconductor device and method for manufacturing the same, and optical semiconductor device |
| 10/23/2013 | CN103367602A Substrate for optical semiconductor device and method for manufacturing the same, and optical semiconductor device and method for manufacturing the same |
| 10/23/2013 | CN103367601A Semiconductor board, semiconductor device and producing method of semiconductor device |
| 10/23/2013 | CN103367600A Light emitting lamp |
| 10/23/2013 | CN103367599A Manufacturing method of light emitting diode packaging structure |
| 10/23/2013 | CN103367598A Light emitting diode packaging structure |
| 10/23/2013 | CN103367597A LED light source |
| 10/23/2013 | CN103367596A 半导体发光元件 The semiconductor light emitting element |
| 10/23/2013 | CN103367595A A light-emitting diode crystalline grain and a manufacturing method thereof |
| 10/23/2013 | CN103367594A Light emitting diode and preparation method thereof |
| 10/23/2013 | CN103367593A A semiconductor light emitting device |
| 10/23/2013 | CN103367592A Light-emitting diode structure and manufacturing method thereof |
| 10/23/2013 | CN103367591A Light-emitting diode chip |
| 10/23/2013 | CN103367590A Gallium nitride-based light-emitting diode and production method thereof |
| 10/23/2013 | CN103367589A Method for producing Ga-containing group III nitride semiconductor |
| 10/23/2013 | CN103367588A Method for developing quantum dot on side wall of GaAs nanowire by utilizing nanoring as mask |
| 10/23/2013 | CN103367587A A stack-scattering-layer containing semiconductor layer of a light emitting diode and a manufacturing method thereof |
| 10/23/2013 | CN103367586A 发光装置及其制造方法 A light emitting device and manufacturing method |
| 10/23/2013 | CN103367585A 发光二极管 Led |
| 10/23/2013 | CN103367584A 发光二极管及光学元件 Light-emitting diodes and optical components |
| 10/23/2013 | CN103367583A 发光二极管 Led |
| 10/23/2013 | CN103367582A 半导体发光元件及其制作方法 The semiconductor light-emitting device and manufacturing method thereof |
| 10/23/2013 | CN103367581A Light emitting diode with electronic barrier layer structure |
| 10/23/2013 | CN103367580A LED (Light-Emitting Diode) chip with high luminous efficiency and manufacturing method thereof |
| 10/23/2013 | CN103367579A Semiconductor illuminating device current barrier layer and method for preparing same |
| 10/23/2013 | CN103367578A Light emitted diode |
| 10/23/2013 | CN103367577A Epitaxial wafer of high-brightness GaN-based LED (Light Emitting Diode) and manufacturing method thereof |
| 10/23/2013 | CN103367576A Semiconductor light emitting device, light emitting diode array and method for manufacturing same |
| 10/23/2013 | CN103367575A Rare bismuth semiconductor quantum well structure improved in heat stability and preparation method for rare bismuth semiconductor quantum well structure |
| 10/23/2013 | CN103367574A 发光二极管装置 Light-emitting diode device |
| 10/23/2013 | CN103367573A 光电子半导体器件 Optoelectronic semiconductor device |
| 10/23/2013 | CN103367572A Group iii nitride compound semiconductor light emitting element and method for producing the same |
| 10/23/2013 | CN103367571A 氮化镓基板及外延晶片 GaN substrates and epitaxial wafers |
| 10/23/2013 | CN103367570A White light led |
| 10/23/2013 | CN103367569A Epitaxial structure body |
| 10/23/2013 | CN103367568A Chip adsorption table face for full-automatic LED chip crystalline grain counter |
| 10/23/2013 | CN103367567A Preparation method for bismuth-based non-rectangular group III-V semiconductor quantum well |
| 10/23/2013 | CN103367566A Voice coil motor and spline shaft-based die bonder welding head mechanism and die bonder |
| 10/23/2013 | CN103367565A Light-Emitting Diode (LED) packaging method |
| 10/23/2013 | CN103367564A Design of COB (Chip on Board) module group with high light extraction rate |
| 10/23/2013 | CN103367563A A method for manufacturing light emitting diodes |
| 10/23/2013 | CN103367562A Light emitting diode and optical element manufacturing method |
| 10/23/2013 | CN103367561A Light emitting diode manufacture method |
| 10/23/2013 | CN103367560A Light emitting diode preparation method |
| 10/23/2013 | CN103367559A Light emitting diode and manufacturing method thereof |
| 10/23/2013 | CN103367558A Spherical photoresist mask and preparation method thereof |
| 10/23/2013 | CN103367557A Manufacturing method of light emitting diode wafer which emits white light directly |
| 10/23/2013 | CN103367556A 外延衬底 Epitaxial substrate |
| 10/23/2013 | CN103367555A Light emitting diode manufacture method |
| 10/23/2013 | CN103367554A Light emitting diode manufacture method |
| 10/23/2013 | CN103367553A Epitaxial substrate preparation method |
| 10/23/2013 | CN103367552A Manufacturing method of semiconductor light emitting device |
| 10/23/2013 | CN103367536A Processing device and processing method |
| 10/23/2013 | CN103367386A Alternating-current light-emitting diode (LED) |
| 10/23/2013 | CN103367384A A light emitting diode element |
| 10/23/2013 | CN103367351A LED module multilayer stacking structure based on silicon substrate and manufacturing method |
| 10/23/2013 | CN103367347A Light emitting diode packaging construction and lamps |
| 10/23/2013 | CN103367346A Novel high-power LED light source and implementation method thereof |
| 10/23/2013 | CN103367345A Light-emitting device |
| 10/23/2013 | CN103367344A Connecting plate sheet material, light emitting diode encapsulation product and light emitting diode light bar |
| 10/23/2013 | CN103367343A Light-emitting module |
| 10/23/2013 | CN103367342A Stacked and combined light emitting diode |
| 10/23/2013 | CN103367122A Epitaxial structure body manufacture method |
| 10/23/2013 | CN103367121A Epitaxial structure body manufacture method |
| 10/23/2013 | CN103367117A GaN (gallium nitride) substrate production method based on HVPE (hydride vapor phase epitaxy) process |
| 10/23/2013 | CN103367113A Method for producing Group III nitride semiconductor and Group III nitride semiconductor |
| 10/23/2013 | CN103366645A Light emitting display device |
| 10/23/2013 | CN103365091A Mask liquid for surface roughening of LED (light emitting diode) chip or substrate as well as preparation method and application thereof |
| 10/23/2013 | CN103363363A Light-emitting diode light bar |
| 10/23/2013 | CN103361059A Ammonia homogeneous precipitation method for preparing Ce-doped yttrium aluminum garnet phosphor |
| 10/23/2013 | CN103361058A Wavelength converting member, making method, and light-emitting device |
| 10/23/2013 | CN103361057A Fluorescent material, Fluorescent material composition containing the same, and light emitting device manufactured by the same |