| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 09/25/2013 | CN103325926A LED packaging structure used in on-board chip and fluorescent powder coating method thereof |
| 09/25/2013 | CN103325925A Phase change support for LED three-dimensional packaging and manufacturing method thereof |
| 09/25/2013 | CN103325924A LED lamp with large visual angle and smooth pictures |
| 09/25/2013 | CN103325923A LED and encapsulating method thereof |
| 09/25/2013 | CN103325922A LED encapsulating method |
| 09/25/2013 | CN103325921A High heat conducting fluorescence insulation LED package structure |
| 09/25/2013 | CN103325920A LED body encapsulating mode |
| 09/25/2013 | CN103325919A LED manufacturing technology of L-shaped metal base plate and base plate |
| 09/25/2013 | CN103325918A Packaging process of light emitting diodes |
| 09/25/2013 | CN103325917A Straight-inserted type LED with heat conduction function |
| 09/25/2013 | CN103325916A Light emitting diode packaging structure and manufacturing method thereof |
| 09/25/2013 | CN103325915A Wiring board device, luminaire, and manufacturing method of the wiring board device |
| 09/25/2013 | CN103325914A 半导体器件 Semiconductor devices |
| 09/25/2013 | CN103325913A Light emitting diode (LED) with composite transparent conducting layer and preparation method thereof |
| 09/25/2013 | CN103325912A Group III nitride semiconductor light-emitting element and method for producing the same |
| 09/25/2013 | CN103325911A Light-emitting diode and manufacture method thereof |
| 09/25/2013 | CN103325910A Manufacturing method and multi-tooth tool of LED surface strengthening light emergent structure based on micro cutting |
| 09/25/2013 | CN103325909A Substrate for GaN-base light emitting diode epitaxial wafer |
| 09/25/2013 | CN103325908A Method for manufacturing LED epitaxial wafer with hexagonal coarsened surface |
| 09/25/2013 | CN103325907A Light emitting diode (led) die having recessed electrode and light extraction structures and method of fabrication |
| 09/25/2013 | CN103325906A Pattern substrate capable of adjusting irritation angle of LED and manufacturing method thereof |
| 09/25/2013 | CN103325905A GaN-based luminous diode chip with current blocking structure and manufacturing method thereof |
| 09/25/2013 | CN103325904A Light-emitting device including nitride-based semiconductor reflector |
| 09/25/2013 | CN103325903A UV LED multiple quantum well structure device capable of regulating and controlling energy band and growing method |
| 09/25/2013 | CN103325902A GaN-base LED epitaxial structure and growing method thereof |
| 09/25/2013 | CN103325901A Vertical structure surface plasmon reinforced GaN-based nanorod LED and preparation method thereof |
| 09/25/2013 | CN103325900A Surface plasmon reinforced GaN-based nanorod LED and preparation method thereof |
| 09/25/2013 | CN103325899A 白光发光二极管 White light emitting diode |
| 09/25/2013 | CN103325898A Polarization-free high-efficiency luminescence quantum dot device with wave length of 1.3 micrometers and design method thereof |
| 09/25/2013 | CN103325897A Lighting emitting component |
| 09/25/2013 | CN103325896A Gallium nitride-based LED (Light Emitting Diode) epitaxial growth method improving light emitting efficiency |
| 09/25/2013 | CN103325895A Method for growing gallium nitride light-emitting diode on gallium nitride monocrystal substrate with non-polar surface |
| 09/25/2013 | CN103325894A Manufacturing method of electrically injected GaN-based resonant cavity |
| 09/25/2013 | CN103325893A GaN-base LED epitaxial wafer based on non-single-crystal substrate |
| 09/25/2013 | CN103325892A Method for manufacturing light emitting diode chip |
| 09/25/2013 | CN103325891A LED component and manufacturing method thereof |
| 09/25/2013 | CN103325890A Light-emitting component positioning method and suction nozzle used |
| 09/25/2013 | CN103325889A LED encapsulating method |
| 09/25/2013 | CN103325778A Light-emitting device and lighting appliance |
| 09/25/2013 | CN103325777A Light source device, method of driving the same, and optical tomography imaging apparatus |
| 09/25/2013 | CN103325776A 发光装置 Light-emitting device |
| 09/25/2013 | CN103322511A Luminaire |
| 09/25/2013 | CN103322453A Light-emitting diode (LED) light source module capable of emitting light evenly in full space |
| 09/25/2013 | CN103320763A Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and method for fabricating a nitride semiconductor template |
| 09/25/2013 | CN103320131A Phosphate based red phosphor, preparation method and application thereof |
| 09/25/2013 | CN103320130A Nitride fluorescent powder and preparation method thereof, light-emitting device comprising nitride fluorescent powder |
| 09/25/2013 | CN103320129A Nano-YAG:Ce phosphor compositions and their methods of preparation |
| 09/25/2013 | CN103320127A Borate-based red fluorescent powder used for white light LED and preparation method thereof |
| 09/25/2013 | CN103320121A Organic/inorganic hybrid fluorescent powder, preparation method thereof, and application of organic/inorganic hybrid fluorescent powder to white light light-emitting diode (LED) light source |
| 09/25/2013 | CN103320022A Low-modulus acrylate conductive adhesive used in semiconductor chip packaging, and preparation method thereof |
| 09/25/2013 | CN103319858A Light resistant and heat resistant LED package resin composition |
| 09/25/2013 | CN103319857A LED package resin composition with high light transmittance |
| 09/25/2013 | CN103319856A LED package resin composition with high refractive index |
| 09/25/2013 | CN103319692A High performance organosilicon epoxy material, preparation method and applications thereof |
| 09/25/2013 | CN103319101A Remote fluorescence glass sheet, manufacturing method and applications thereof |
| 09/25/2013 | CN102719250B Blue-light-matrix single fluorescent powder and application thereof in preparation of white light LED (light-emitting diode) |
| 09/25/2013 | CN102386292B III-group nitride-based luminous device capable of improving light extraction efficiency and manufacture method thereof |
| 09/25/2013 | CN102295928B Red phosphor based on near ultraviolet light excitation, preparation method and application thereof |
| 09/25/2013 | CN102243993B Method for growing GaInP compound semiconductor on Ge substrate |
| 09/25/2013 | CN102208497B Preparation method of semi-polarity or nonpolar GaN composite substrate on silicon substrate |
| 09/25/2013 | CN102199765B Surface treatment agent for metal |
| 09/25/2013 | CN102194943B P-type ZnO and n-type GaN combined ZnO-based light-emitting devices and manufacturing methods thereof |
| 09/25/2013 | CN102185058B Nitride light-emitting diode (LED) structure and preparation method thereof |
| 09/25/2013 | CN102165588B Optoelectronic module having a carrier substrate and a plurality of radiation-emitting semiconductor components and method for the production thereof |
| 09/25/2013 | CN102157654B Inverted mounting LED chip based on double-faced shrinkage pool substrate and component gradual change buffer layer |
| 09/25/2013 | CN102136537B Semiconductor illuminating element with thinned structure and preparation method thereof |
| 09/25/2013 | CN102124581B Light converting construction |
| 09/25/2013 | CN102104107B Light emitting device |
| 09/25/2013 | CN102093891B Nano-YAG:Ce phosphor compositions and their methods of preparation |
| 09/25/2013 | CN102071021B Orange red fluorescent powder for LED and preparation method thereof |
| 09/25/2013 | CN102067341B Light emitting device and manufacturing method for same |
| 09/25/2013 | CN101965649B Optoelectronic semiconductor chip comprising a reflective layer |
| 09/25/2013 | CN101803045B Light-emitting structure |
| 09/25/2013 | CN101764186B Semiconductor light-emitting device |
| 09/24/2013 | USRE44510 Multifunctional linker molecules for tuning electronic charge transport through organic-inorganic composite structures and uses thereof |
| 09/24/2013 | US8541871 Multilayered lead frame for a semiconductor light-emitting device |
| 09/24/2013 | US8541869 Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates |
| 09/24/2013 | US8541818 Semiconductor heterostructure diodes |
| 09/24/2013 | US8541810 Blue light emitting semiconductor nanocrystal materials |
| 09/24/2013 | US8541809 Light-emitting surface element and method for producing a light-emitting surface element |
| 09/24/2013 | US8541808 Semiconductor light-emitting device |
| 09/24/2013 | US8541807 Semiconductor light emitting device and light emitting apparatus having the same |
| 09/24/2013 | US8541806 Light emitting diode having electrode pads |
| 09/24/2013 | US8541805 Mounting substrate and manufacturing method thereof, light-emitting module and illumination device |
| 09/24/2013 | US8541804 Electro-optical device |
| 09/24/2013 | US8541803 Cadmium-free re-emitting semiconductor construction |
| 09/24/2013 | US8541802 Phosphor placement in white light emitting diode assemblies |
| 09/24/2013 | US8541801 Light-emitting-device package and a method for producing the same |
| 09/24/2013 | US8541800 Light emitting device package, backlight unit, display device and lighting device |
| 09/24/2013 | US8541799 Light-emitting element package and fabrication method thereof |
| 09/24/2013 | US8541798 Semiconductor light emitting device, and backlight and display device comprising the semiconductor light emitting device |
| 09/24/2013 | US8541797 Illuminator and method for producing such illuminator |
| 09/24/2013 | US8541796 Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device |
| 09/24/2013 | US8541795 Side-emitting optical coupling device |
| 09/24/2013 | US8541794 Nitride semiconductor light-emitting devices |
| 09/24/2013 | US8541793 Light emitting diode device and method for fabricating the same |
| 09/24/2013 | US8541790 Lighting device |
| 09/24/2013 | US8541788 LED with current confinement structure and surface roughening |
| 09/24/2013 | US8541292 Group III nitride semiconductor epitaxial substrate and method for manufacturing the same |
| 09/24/2013 | US8541290 Optoelectronic substrate and methods of making same |