Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2008
04/24/2008US20080093673 Semiconductor device and fabrication method thereof
04/24/2008US20080093671 Semi-Conductor Element Comprising An Integrated Zener Diode And Method For The Production Thereof
04/24/2008US20080093670 Signal and/or ground planes with double buried insulator layers and fabrication process
04/24/2008US20080093668 Method for the Manufacture of a Semiconductor Device and a Semiconductor Device Obtained Through It
04/24/2008US20080093667 Metal-oxide-semiconductor device having trenched diffusion region and method of forming same
04/24/2008US20080093665 Semiconductor apparatus and method of manufacturing the same
04/24/2008US20080093664 Memory device and method of manufacturing the same
04/24/2008US20080093663 Nonvolatile memory device and method for forming the same
04/24/2008US20080093662 Semiconductor memory device including recessed control gate electrode
04/24/2008US20080093661 Non-volatile memory device having a charge trapping layer and method for fabricating the same
04/24/2008US20080093660 Flash memory device and method for manufacturing the same
04/24/2008US20080093659 Electrically programmable resistor and methods
04/24/2008US20080093658 Method for Nitriding Tunnel Oxide Film, Method for Manufacturing Non-Volatile Memory Device, Non-Volatile Memory Device, Control Program and Computer-Readable Recording Medium
04/24/2008US20080093657 Nonvolatile memory devices and methods of fabricating the same
04/24/2008US20080093656 Semiconductor devices and methods of fabricating the same
04/24/2008US20080093655 Semiconductor device and method for forming the same
04/24/2008US20080093654 Non-volatile two-transistor programmable logic cell and array layout
04/24/2008US20080093653 Nonvolatile Memory Devices and Methods for Forming Same
04/24/2008US20080093651 Flash memory devices and methods for fabricating flash memory devices
04/24/2008US20080093650 Nonvolatile memory device and method of forming the same
04/24/2008US20080093649 Non-volatile memory device and methods of manufacturing and operating the same
04/24/2008US20080093648 Non-volatile memory devices including double diffused junction regions and methods of fabricating the same
04/24/2008US20080093647 Split gate non-volatile memory devices and methods of forming the same
04/24/2008US20080093646 Non-volatile memory device and method for fabricating the same
04/24/2008US20080093644 DRAM Arrays, Vertical Transistor Structures, and Methods of Forming Transistor Structures and DRAM Arrays
04/24/2008US20080093643 Non-volatile memory device and fabrication method
04/24/2008US20080093641 Method of manufacturing a multi-path lateral high-voltage field effect transistor
04/24/2008US20080093640 Method for tuning epitaxial growth by interfacial doping and structure including same
04/24/2008US20080093639 Method for forming gate insulating layer of mos transistor
04/24/2008US20080093637 Vertical junction field effect transistor with mesa termination and method of making the same
04/24/2008US20080093636 Scalable Process And Structure For JFET For Small And Decreasing Line Widths
04/24/2008US20080093635 Junction Fet and Method of Manufacturing the Same
04/24/2008US20080093631 Contact structure for semiconductor devices
04/24/2008US20080093630 Heterostructure Field Effect Transistor
04/24/2008US20080093629 Metal oxide field effect transistor with a sharp halo
04/24/2008US20080093628 Methods of Forming Semiconductor Devices Having Multiple Channel MOS Transistors and Related Intermediate Structures
04/24/2008US20080093627 Semiconductor mos transistor device and method for making the same
04/24/2008US20080093626 Nitride semiconductor device
04/24/2008US20080093624 Integrated Circuit ESD Protection
04/24/2008US20080093623 Insulated gate semiconductor device and method for manufacturing same
04/24/2008US20080093605 Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry
04/24/2008US20080093604 Pixel structure
04/24/2008US20080093603 Lower substrate, display apparatus having the same and method of manufacturing the same
04/24/2008US20080093602 Image display unit and method for manufacutre the same
04/24/2008US20080093601 multilayer of insulating layer pattern on the first single-crystalline layer, seed layer fills the opening and has a crystalline structure; vapor deposited silicon germanium, silicon carbide and/or silicon germanium carbon layer for prevent defects; semiconductors
04/24/2008US20080093600 Thin film transistor array panel and manufacturing method thereof
04/24/2008US20080093599 Array substrate with reduced pixel defect, method of manufacturing the same and liquid crystal display panel having the same
04/24/2008US20080093598 Substrate for display device, manufacturing method for same and display device
04/24/2008US20080093595 Thin film transistor for cross point memory and method of manufacturing the same
04/24/2008US20080093593 Semiconductor light emitting device
04/24/2008US20080093589 Resistance variable devices with controllable channels
04/24/2008US20080093464 Wireless Chip And Manufacturing Method Thereof
04/24/2008US20080092938 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
04/24/2008US20080092807 Transistor Production Using Semiconductor Printing Fluid
04/24/2008DE19943143B4 Halbleiterbauelement für hohe Sperrspannungen bei gleichzeitig niedrigem Einschaltwiderstand und Verfahren zu dessen Herstellung A semiconductor device for high blocking voltages with a low on-resistance and process for its preparation
04/24/2008DE10350751B4 Verfahren zum Herstellen eines vertikalen Feldeffekttransistors und Feldeffekt-Speichertransistor, insbesondere FLASH-Speichertransistor A method for producing a vertical field effect transistor and the field-effect transistor memory, in particular flash memory transistor
04/24/2008DE10314151B4 Halbleiterbauelementeanordnung und Verfahren zur Kompensation parasitärer Ströme Semiconductor device assembly and method for compensating for parasitic currents
04/24/2008DE10296970B4 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
04/24/2008DE102007037638A1 Nichtflüchtige Speichervorrichtung mit einer Ladungseinfangschicht und Verfahren zur Herstellung derselben A non-volatile memory device comprising a charge-trapping layer and method of making same
04/24/2008DE102007028920A1 Feldeffekttransistor und Verfahren zur Herstellung desselben Field effect transistor and method of manufacturing the same
04/24/2008DE102007019561A1 Halbleitervorrichtung und Herstellungsverfahren derselben A semiconductor device and manufacturing method thereof
04/24/2008DE102006049043A1 Semiconductor component i.e. MOSFET, has semiconductor body comprising p-doped body-zone and contact zone that is doped stronger than body zone and strongly n-doped source-zone arranged between front side of component and contact zone
04/24/2008DE102006048625A1 Integrated circuit, has sensor component integrated into cell array of load current component, and trenches of sensor component of one side uniformly merging into trenches of cell array of load current component
04/24/2008DE102006046727A1 High frequency bipolar transistor component zones manufacturing method for voltage controlled oscillator, involves implanting substances in component areas to form cathode zone of varactor that extends in vertical direction until to zones
04/24/2008DE102005037566B4 Herstellungsverfahren für eine Halbleiterstruktur und entsprechende Halbleiterstruktur Manufacturing method of a semiconductor structure and corresponding semiconductor structure
04/24/2008CA2660191A1 Semiconductor structure and process for forming ohmic connections to a semiconductor structure
04/23/2008EP1914807A2 Method for producing semiconductor device
04/23/2008EP1914797A2 Method of manufacturing a lateral power mosfet
04/23/2008EP1913640A2 Vertical-channel junction field-effect transistors having buried gates and methods of making
04/23/2008EP1913639A2 Sensor isolation plane for planer elements
04/23/2008EP1913630A2 Semiconductor device and method of manufacturing such a device
04/23/2008EP1697983A4 Highly efficient gallium nitride based light emitting diodes via surface roughening
04/23/2008EP1665285B1 Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance
04/23/2008EP1660973A4 Enhanced parimutuel wagering
04/23/2008EP1573822A4 Complementary analog bipolar transistors with trench-constrained isolation diffusion
04/23/2008EP1488462A4 Strained fin fets structure and method
04/23/2008EP1403913B1 Substrate treating device and substrate treating method
04/23/2008EP1200994B1 Punch-through diode and method of manufacturing the same
04/23/2008EP1129490B1 Thyristors and their manufacture
04/23/2008CN101167190A Diamond transistor and method of manufacture thereof
04/23/2008CN101167180A Semiconductor device and its making method
04/23/2008CN101167177A Integration process for fabricating stressed transistor structure
04/23/2008CN101167170A Method and apparatus for providing structural support for interconnect pad while allowing signal conductance
04/23/2008CN101167167A Bipolar transistor and method of fabricating the same
04/23/2008CN101166013A Differential amplifier using body-source cross coupling
04/23/2008CN101165922A Stack type metal-oxide-metal capacitor structure
04/23/2008CN101165921A 半导体结构 The semiconductor structure
04/23/2008CN101165920A Display device
04/23/2008CN101165919A Method of operating a semiconductor memory device having a recessed control gate electrode
04/23/2008CN101165918A Semiconductor device and fabrication method thereof
04/23/2008CN101165917A MOS devices with continuous contact etch stop layer
04/23/2008CN101165916A Semiconductor device and method for fabricating the same
04/23/2008CN101165915A Semiconductor device provided with floating electrode
04/23/2008CN101165914A Semiconductor device and method for manufacturing the same
04/23/2008CN101165907A Image display unit and method for manufacutre the same
04/23/2008CN101165906A Thin film transistor array substrate and electronic ink display device
04/23/2008CN101165904A Pixel structure
04/23/2008CN101165902A Nonvolatile memory devices and methods for forming same
04/23/2008CN101165901A Semiconductor memory device including recessed control gate electrode
04/23/2008CN101165899A Power metal oxide silicon field effect transistor