| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 02/17/2011 | US20110037130 Method and structure for self aligned contact for integrated circuits |
| 02/17/2011 | US20110037129 Semiconductor Device Having Multiple Fin Heights |
| 02/17/2011 | US20110037126 Semiconductor arrangement including a load transistor and sense transistor |
| 02/17/2011 | US20110037124 Thin film transistor |
| 02/17/2011 | US20110037123 Soi substrate and manufacturing method of the same, and semiconductor device |
| 02/17/2011 | US20110037122 Semiconductor structure and fabrication method thereof |
| 02/17/2011 | US20110037121 Input/output electrostatic discharge device with reduced junction breakdown voltage |
| 02/17/2011 | US20110037120 Shielded gate trench MOSFET device and fabrication |
| 02/17/2011 | US20110037119 Memory |
| 02/17/2011 | US20110037118 Nonvolatile memory device having cell and peripheral regions and method of making the same |
| 02/17/2011 | US20110037117 Lanthanum-metal oxide dielectric apparatus, methods, and systems |
| 02/17/2011 | US20110037116 Semiconductor device and method of manufacturing the same |
| 02/17/2011 | US20110037115 System and method for improving mesa width in a semiconductor device |
| 02/17/2011 | US20110037114 Semiconductor memory device and method of manufacturing semiconductor memory device |
| 02/17/2011 | US20110037113 Semiconductor struture and method of forming the same |
| 02/17/2011 | US20110037112 Nonvolatile memory devices with oblique charge storage regions and methods of forming the same |
| 02/17/2011 | US20110037110 Capacitor and method for fabricationg the same, and semiconductor device and method for fabricating the same |
| 02/17/2011 | US20110037109 Semiconductor devices including lower and upper device isolation patterns |
| 02/17/2011 | US20110037108 Magnetoresistive memory and manufacturing method thereof |
| 02/17/2011 | US20110037106 Semiconductor device and method of producing the same |
| 02/17/2011 | US20110037105 Self-aligned selective metal contact to source/drain diffusion region |
| 02/17/2011 | US20110037104 Vertical spacer forming and related transistor |
| 02/17/2011 | US20110037103 Semiconductor device and method of manufacturing the same |
| 02/17/2011 | US20110037102 Hybrid plasma-semiconductor optoelectronic devices and transistors |
| 02/17/2011 | US20110037101 Semiconductor device |
| 02/17/2011 | US20110037100 Nitride semiconductor device and method for fabricating the same |
| 02/17/2011 | US20110037099 Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device |
| 02/17/2011 | US20110037098 Substrate structures and methods of manufacturing the same |
| 02/17/2011 | US20110037089 Nitride-based semiconductor device and method for fabricating the same |
| 02/17/2011 | US20110037088 Nitride-based semiconductor device and method for fabricating the same |
| 02/17/2011 | US20110037086 Nitride based semiconductor light-emitting device |
| 02/17/2011 | US20110037076 Diamond semiconductor device and method of manufacturing the same |
| 02/17/2011 | US20110037075 Process for fabricating a structure for epitaxy without an exclusion zone |
| 02/17/2011 | US20110037074 Thin film transistor method of fabricating the same, and organic light emitting diode dislplay device having the same |
| 02/17/2011 | US20110037073 Methods of fabricating thin film transistor and organic light emitting diode display device having the same |
| 02/17/2011 | US20110037070 Thin film transistor array panel and method for manufacturing the same |
| 02/17/2011 | US20110037068 Semiconductor device and method for manufacturing the same |
| 02/17/2011 | US20110037067 Zno-group semiconductor element |
| 02/17/2011 | US20110037048 Composition Comprising Rare-earth Dielectric |
| 02/17/2011 | DE112009000642T5 LDMOS Vorrichtungen mit verbesserten Architekturen LDMOS devices with improved architectures |
| 02/17/2011 | DE112008002818T5 Elektronisches Bauelement mit einem gesteuerten elektrischen Feld Electronic component with a controlled electric field |
| 02/17/2011 | DE10350770B4 Druckkontakt-Halbleiterbauelement mit Blindsegment The pressure contact type semiconductor device having dummy segment |
| 02/17/2011 | DE102010036743A1 Bipolares Halbleiterbauelement und Herstellungsverfahren A bipolar semiconductor device and manufacturing method |
| 02/17/2011 | DE102009036951A1 Multilayer circuit, particularly three-dimensional ceramic substrate system, is made of sintered ceramic material, where active electronic component is arranged in cavity |
| 02/17/2011 | DE102008024464B4 Halbleitervorrichtung Semiconductor device |
| 02/17/2011 | DE102006046375B4 Feldeffekttransistor mit einer verspannten dielektrischen Schicht auf der Grundlage einer(-) Bauteiltopographie sowie Halbleiterbauelement bzw. Verfahren zur Herstellung eines Feldeffekttransistors Field effect transistor with a strained dielectric layer on the basis of a (-) component topography as well as semiconductor device and the method for producing a field effect transistor |
| 02/17/2011 | DE102006021362B4 Laterales SOI-Halbleiterbauteil A lateral SOI semiconductor device |
| 02/16/2011 | EP2284901A1 Semiconductor device |
| 02/16/2011 | EP2284900A1 Power semiconductor device |
| 02/16/2011 | EP2284896A1 Solid state imaging device having a photodiode and a MOSFET |
| 02/16/2011 | EP2284879A2 Capacitor-less memory device |
| 02/16/2011 | EP2284867A1 Method of manufacturing silicon carbide semiconductor device |
| 02/16/2011 | EP2284605A2 Semiconductor device and fabrication method thereof |
| 02/16/2011 | EP2284297A1 Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminium, indium, gallium) nitride ((AI, In,Ga)N) substrates for opto-electronic and electronic devices |
| 02/16/2011 | EP2284296A1 The improvement of the luminescent efficiency of semiconductor nanocrystals by surface treatment |
| 02/16/2011 | EP1428247B1 Production method for field-effect transistor with horizontal self-aligned gates |
| 02/16/2011 | CN201749854U Rectifier diode for automobile |
| 02/16/2011 | CN201749853U Diode |
| 02/16/2011 | CN201749852U Fast ultra-junction longitudinal double diffusion metal oxide semiconductor tube |
| 02/16/2011 | CN201749847U Improved lead frame structure |
| 02/16/2011 | CN1893109B Semiconductor device |
| 02/16/2011 | CN1783490B Integrated circuit and method for manufacturing insulated grid field effect transistor |
| 02/16/2011 | CN1676484B Glass-ceramic and method for its production |
| 02/16/2011 | CN101978506A High breakdown voltage double-gate semiconductor device |
| 02/16/2011 | CN101978505A Tft. shift register, scan signal line driving circuit, display device, and tft trimming method |
| 02/16/2011 | CN101978504A Tft, shift register, scanning signal line drive circuit, and display |
| 02/16/2011 | CN101978503A Semiconductor wafer, method of manufacturing a semiconductor wafer, and semiconductor device |
| 02/16/2011 | CN101978502A Semiconductor device |
| 02/16/2011 | CN101978501A Scalable electrically eraseable and programmable memory |
| 02/16/2011 | CN101978482A Systems and devices including multi-gate transistors and methods of using, making, and operating the same |
| 02/16/2011 | CN101978480A Multilayer wiring, semiconductor device, substrate for display and display |
| 02/16/2011 | CN101978442A Half-metallic antiferromagnetic material |
| 02/16/2011 | CN101976687A Fast recovery metal oxide semiconductor diode with low power consumption |
| 02/16/2011 | CN101976686A Field effect transistor |
| 02/16/2011 | CN101976685A Transistor structure with etch stop layer and manufacturing method thereof |
| 02/16/2011 | CN101976684A Semiconductor device and its drive method |
| 02/16/2011 | CN101976683A Insulated gate bipolar transistor and manufacturing method thereof |
| 02/16/2011 | CN101976682A Silicon transverse device on N-type insulator for improving current density and preparation process thereof |
| 02/16/2011 | CN101976681A P-type silicon-on-insulator transverse device for improving current density and preparation process thereof |
| 02/16/2011 | CN101976680A Semiconductor structure for increasing integration density of high-voltage integrated circuit device and manufacturing method |
| 02/16/2011 | CN101976677A Phase change random access memory array based on ZnO schottky diodes and manufacturing method thereof |
| 02/16/2011 | CN101976675A Phase change memory using wide band gap semiconductor diode as gating tube and method |
| 02/16/2011 | CN101976670A Silicon-on-insulator integrated great-current P-type combined semiconductor device |
| 02/16/2011 | CN101976667A High-performance complementary metal oxide semiconductor (CMOS) device |
| 02/16/2011 | CN101976666A Controllable self-clamping SensorFET composite transverse power device with multiple release channels |
| 02/16/2011 | CN101976665A Controllable self-clamp Sensor FET (Field Effect Transistor) composite longitudinal power device with multiple bleeding channels |
| 02/16/2011 | CN101976650A Thin film transistor and manufacture method thereof |
| 02/16/2011 | CN101974335A The improvement of the luminescent efficiency of semiconductor nanocrystals by surface treatment |
| 02/16/2011 | CN101651148B ZnO group heterojunction and preparation method thereof |
| 02/16/2011 | CN101599462B Production method of high and low voltage devices based on thin epitaxy |
| 02/16/2011 | CN101587895B Gate pole sensitive triggering unidirectional thyristor chip and preparation method thereof |
| 02/16/2011 | CN101526705B Liquid crystal display panel, thin film transistor substrate and manufacturing process thereof |
| 02/16/2011 | CN101523575B Plasma oxidizing method, plasma processing apparatus |
| 02/16/2011 | CN101506952B Oxide film forming method and apparatus therefor |
| 02/16/2011 | CN101465374B MOS device with integrated schottky diode in active region contact trench |
| 02/16/2011 | CN101378074B Nitride semiconductor device, doherty amplifier and drain voltage controlled amplifier |
| 02/16/2011 | CN101373788B Semiconductor structure |
| 02/16/2011 | CN101369599B Ohm contact of gallium nitride base device and preparation method thereof |
| 02/16/2011 | CN101361189B High-performance FET devices and methods |
| 02/16/2011 | CN101320688B Method of manufacturing semiconductor device and semiconductor device manufactured thereof |