Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2011
02/24/2011US20110042729 Method for improving selectivity of epi process
02/24/2011US20110042728 Semiconductor device with enhanced stress by gates stress liner
02/24/2011US20110042727 MOSFET device with reduced breakdown voltage
02/24/2011US20110042726 High-voltage transistor device with integrated resistor
02/24/2011US20110042725 Semiconductor device
02/24/2011US20110042724 Trenched mosfets with part of the device formed on a (110) crystal plane
02/24/2011US20110042721 Photovoltaic devices
02/24/2011US20110042720 Magneto-Electric Field Effect Transistor for Spintronic Applications
02/24/2011US20110042719 Semiconductor device and method of manufacturing a semiconductor device
02/24/2011US20110042718 Nitride semiconductor layer-containing structure, nitride semiconductor layer-containing composite substrate and production methods of these
02/24/2011US20110042716 ESD protection device structure
02/24/2011US20110042715 Semiconductor device
02/24/2011US20110042706 AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs
02/24/2011US20110042692 Active matrix substrate, electro-optical device, and electronic device
02/24/2011US20110042687 Graphene growth on a carbon-containing semiconductor layer
02/24/2011US20110042686 Substrates and methods of fabricating doped epitaxial silicon carbide structures with sequential emphasis
02/24/2011US20110042685 Substrates and methods of fabricating epitaxial silicon carbide structures with sequential emphasis
02/24/2011US20110042684 Method of Growing AlN Crystals, and AlN Laminate
02/24/2011US20110042683 Crack free multilayered devices, methods of manufacture thereof and articles comprising the same
02/24/2011US20110042682 Inclusion-free uniform semi-insulating group iii nitride substrates and methods for making same
02/24/2011US20110042678 Pad area, organic light emitting diode display device having the same, and method of fabricating the same
02/24/2011US20110042675 Display device and manufacturing method thereof
02/24/2011US20110042674 Production methods of pattern thin film, semiconductor element, and circuit substrate, and resist material, semiconductor element, and circuit substrate
02/24/2011US20110042673 Sensor and method for manufacturing the same
02/24/2011US20110042672 Coplanar waveguide having amorphous silicon layer between substrate and insulated layer and a manufacturing method thereof
02/24/2011US20110042670 Thin film transistor and method of manufacturing the same
02/24/2011US20110042669 Thin film transistors and methods of manufacturing the same
02/24/2011US20110042668 Amorphous oxide semiconductor material, field-effect transistor, and display device
02/24/2011US20110042667 Semiconductor device and method for manufacturing the same
02/24/2011US20110042648 Reconfigurable logic device using spin accumulation and diffusion
02/24/2011US20110042646 Nitride semiconductor wafer, nitride semiconductor chip, method of manufacture thereof, and semiconductor device
02/24/2011US20110042642 Method for producing nanostructures on metal oxide substrate, method for depositing thin film on same, and thin film device
02/24/2011US20110042641 Branched nanoscale wires
02/24/2011US20110041898 Back Metal Layers in Inverted Metamorphic Multijunction Solar Cells
02/24/2011DE19929026B4 Verfahren zur Herstellung eines Drucksensors A process for producing a pressure sensor
02/24/2011DE112009000253T5 Halbleitervorrichtung Semiconductor device
02/24/2011DE112006002487B4 Herstellung von Gruppe-III-Nitrid-Halbleiter-Bauteilen Preparation of group-III nitride semiconductor devices
02/24/2011DE112004001049B4 Verfahren zum Herstellen einer nichtflüchtigen Speichervorrichtung A method of manufacturing a nonvolatile memory device
02/24/2011DE102010038910A1 Halbleitervorrichtung mit Durchgangselektrode und Herstellungsverfahren A semiconductor device having through-electrode and production method
02/24/2011DE102009028049B3 Leistungshalbleiterbauelement mit Potenzialsonde, Leistungshalbleiteranordnung mit einem eine Potenzialsonde aufweisenden Leistungshalbleiterbauelement und Verfahren zum Betrieb eines Leistungshalbleiterbauelements mit einer Potenzialsonde Power semiconductor component with potential probe, power semiconductor device with a probe having a potential power semiconductor device and method of operating a power semiconductor device with a potential probe
02/24/2011DE102008005932B4 Halbleiter-ESD-Bauelement und Verfahren zum Betreiben desselben Of the same semiconductor ESD device and method of operating
02/24/2011DE102006045125B4 Feldeffekttransistoranordnung, Speichereinrichtung und Verfahren zur Herstellung solcher sowie einer 3D-Polysiliziumstruktur Field effect transistor device, storage device and method of making such, as well as a 3D-polysilicon structure
02/24/2011DE102006038860B4 Halbleitervorrichtung Semiconductor device
02/24/2011DE102005018346B4 Halbleiterchip für eine vollständig verarmte SOI-Mehrfach-Schwellenspannungs-Anwendung und ein Verfahren zu dessen Herstellung A semiconductor chip for a fully depleted SOI-multiple threshold voltage application and a process for its preparation
02/24/2011DE10112783B4 Halbleiteranordnung mit einem Leistungs-MOSFET und einem Widerstandselement A semiconductor device having a power MOSFET and a resistor element
02/24/2011CA2738680A1 Semiconductor device
02/23/2011EP2287913A2 Electronic device, thin film transistor structure and flat panel display having the same
02/23/2011EP2287905A2 High frequency circuit having multi-chip module structure
02/23/2011EP2287895A1 Semiconductor device and production method thereof
02/23/2011EP2287825A2 Active matrix substrate, electro-optical device, and electronic device
02/23/2011EP2286455A1 Trench gate semiconductor device and method of manufacturing thereof.
02/23/2011EP1878809B1 ELEMENT STRUCTURE USING A Al-Ni-B ALLOY WIRING MATERIAL
02/23/2011EP1636848B1 Semiconductor device
02/23/2011EP1316786B1 Capacity type pressure sensor and method of manufacturing the pressure sensor
02/23/2011EP1246258B1 Semiconductor device and information processing device
02/23/2011CN1812112B Solid image sensor device with nonplanar transistor and manufacture method thereof
02/23/2011CN1743935B Substrate for a display device, liquid crystal display device having the same and method of manufacturing the same
02/23/2011CN1674222B Semiconductor substrate, semiconductor device, and manufacturing methods for them
02/23/2011CN101981722A Organic semiconductor composition, organic thin film and organic thin film element provided with organic thin film
02/23/2011CN101981702A 半导体装置 Semiconductor device
02/23/2011CN101981701A Semiconductor device, and method for manufacturing the same
02/23/2011CN101981700A Double guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
02/23/2011CN101981699A Semiconductor-based large-area flexible electronic devices
02/23/2011CN101981690A Method for manufacturing a MOS semiconductor memory device, and plasma CVD device
02/23/2011CN101981689A Semiconductor memory and method for manufacturing the same
02/23/2011CN101981677A Epitaxial substrate for smeiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element
02/23/2011CN101981676A Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus
02/23/2011CN101981675A Laminated structure, method of manufacturing a laminated structure, electronic element, electronic element array, image displaying medium, and image displaying device
02/23/2011CN101981673A Metal gate structure and method of manufacturing same
02/23/2011CN101981671A Film forming method and semiconductor device manufacturing method
02/23/2011CN101981658A Epitaxial substrate for semiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element
02/23/2011CN101981657A Methods of forming buffer layer architecture on silicon and structures formed thereby
02/23/2011CN101980365A Pixel structure and manufacturing method thereof
02/23/2011CN101980364A Thin-layer SOI composite power device
02/23/2011CN101980363A Controllable self-clamping SensorFET composite lateral power device
02/23/2011CN101980362A Controllable self-clamping SensorFET composite vertical power device
02/23/2011CN101980356A Structures of and methods of fabricating trench-gated mis devices
02/23/2011CN101542742B Thin-film transistor, its manufacturing method, and display
02/23/2011CN101399277B Image sensor having large micro-lenses at the peripheral regions
02/23/2011CN101312160B Semiconductor memory device and its manufacture method
02/23/2011CN101271856B Etch depth determination and formation of shield gate groove and MOSFET wafer
02/23/2011CN101226941B Semiconductor device and manufacturing method thereof
02/23/2011CN101123275B Vertical double channel transistor and its manufacture method
02/22/2011US7894026 Thin film transistor array panel and liquid crystal display including light shield
02/22/2011US7894009 Liquid crystal display device and a manufacturing method of the same
02/22/2011US7893545 Semiconductor device
02/22/2011US7893541 Optically initiated silicon carbide high voltage switch
02/22/2011US7893536 Semiconductor device
02/22/2011US7893535 Semiconductor device and method for fabricating the same
02/22/2011US7893532 External contact material for external contacts of a semiconductor device and method of making the same
02/22/2011US7893520 Efficient interconnect structure for electrical fuse applications
02/22/2011US7893519 Integrated circuit with conductive structures
02/22/2011US7893511 Integrated circuit, memory module, and method of manufacturing an integrated circuit
02/22/2011US7893509 Transistor and CVD apparatus used to deposit gate insulating film thereof
02/22/2011US7893508 Semiconductor device and manufacturing method thereof
02/22/2011US7893507 Metal oxide semiconductor (MOS) transistors with increased break down voltages and methods of making the same
02/22/2011US7893504 Non-volatile semiconductor memory device with contact plug electrically conductive in response to light
02/22/2011US7893503 Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain
02/22/2011US7893501 Semiconductor device including MISFET having internal stress film
02/22/2011US7893500 High voltage GaN transistors