Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2011
04/28/2011US20110095366 Forming an extremely thin semiconductor-on-insulator (etsoi) layer
04/28/2011US20110095365 Power transistor with improved high-side operating characteristics and reduced resistance and related apparatus and method
04/28/2011US20110095364 Semiconductor device and method
04/28/2011US20110095363 Semiconductor Structures Employing Strained Material Layers with Defined Impurity Gradients and Methods for Fabricating Same
04/28/2011US20110095362 Field plate trench transistor and method for producing it
04/28/2011US20110095361 Multiple layer barrier metal for device component formed in contact trench
04/28/2011US20110095358 Double-sided semiconductor structure and method for manufacturing same
04/28/2011US20110095357 Semiconductor Constructions, Methods Of Forming Transistor Gates, And Methods Of Forming NAND Cell Units
04/28/2011US20110095356 Nonvolatile memory devices
04/28/2011US20110095355 Split charge storage node outer spacer process
04/28/2011US20110095354 Nonvolatile semiconductor memory device and manufacturing method thereof
04/28/2011US20110095353 One-transistor cell semiconductor on insulator random access memory
04/28/2011US20110095352 Flash memory device and fabrication method thereof
04/28/2011US20110095351 Semiconductor devices and methods of fabricating the same
04/28/2011US20110095350 Vertical type integrated circuit devices, memory devices, and methods of fabricating the same
04/28/2011US20110095348 Semiconductor device and method of manufacturing the same
04/28/2011US20110095347 Vertical diode using silicon formed by selective epitaxial growth
04/28/2011US20110095346 Semiconductor device and method of fabricating same
04/28/2011US20110095345 Methods of Fabricating Field Effect Transistors Having Protruded Active Regions
04/28/2011US20110095344 Method of Improving Minority Lifetime in Silicon Channel and Products Thereof
04/28/2011US20110095343 BI-LAYER nFET EMBEDDED STRESSOR ELEMENT AND INTEGRATION TO ENHANCE DRIVE CURRENT
04/28/2011US20110095342 Printed Material Constrained By Well Structures And Devices Including Same
04/28/2011US20110095341 Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods
04/28/2011US20110095340 Soft error reduction circuit and method
04/28/2011US20110095339 Semiconductor device and method for manufacturing the same
04/28/2011US20110095337 Semiconductor device and method of manufacturing the same
04/28/2011US20110095336 Lateral hemt and method for the production of a lateral hemt
04/28/2011US20110095335 Nitride semiconductor device
04/28/2011US20110095333 High-drive current mosfet
04/28/2011US20110095312 Semiconductor Device and Method of Manufacturing the Same
04/28/2011US20110095309 Semiconductor device
04/28/2011US20110095305 Semiconductor device
04/28/2011US20110095304 Process for forming an interface between silicon carbide and silicon oxide with low density of states
04/28/2011US20110095303 Semiconductor device and method for manufacturing the same
04/28/2011US20110095302 Semiconductor device and manufacturing method thereof
04/28/2011US20110095301 Silicon carbide semiconductor device
04/28/2011US20110095296 Thin film transistor and organic light emitting display device having the same
04/28/2011US20110095295 Thin Film Transistor Substrate And Method For Fabricating The Same
04/28/2011US20110095292 Silicon nitride film, and semiconductor device and method of manufacturing the same
04/28/2011US20110095291 Lateral Growth Semiconductor Method and Devices
04/28/2011US20110095288 Thin film transistor and display device
04/28/2011US20110095287 Nonvolatile memory device and nonvolatile memory array including the same
04/28/2011US20110095286 Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device having the thin film transistor
04/28/2011US20110095285 Display Device and Thin Film Transistor Array Substrate and Thin Film Transistor thereof
04/28/2011US20110095268 Transistor and flat panel display including thin film transistor
04/28/2011US20110095267 Nanowire Stress Sensors and Stress Sensor Integrated Circuits, Design Structures for a Stress Sensor Integrated Circuit, and Related Methods
04/28/2011US20110095236 Material For Functional Layer Of Organic Electronic Component
04/28/2011US20110094582 Photochemical electrode, construction and uses thereof
04/28/2011DE112009001286T5 Verfahren zur Herstellung getorter lateraler thyristorbasierter Speicherzellen mit wahlfreiem Zugriff (GLTRAM) A process for preparing getorter lateral thyristorbasierter memory cell with random access memory (GLTRAM)
04/28/2011DE112005000529B4 Verbindungshalbleiter-Vorrichtung, Herstellungsverfahren der Verbindungshalbleiter-Vorrichtung und Diode A compound semiconductor device production method of the compound semiconductor device, and diode
04/28/2011DE10359248B4 Verfahren, bei dem eine Aktivmatrixvorrichtung mit organischen Lichtemissionsdioden hergestellt wird Method in which an active matrix device is fabricated with organic light emitting diodes
04/28/2011DE102010060138A1 Lateraler HEMT und Verfahren zur Herstellung eines lateralen HEMT Lateral HEMT and method for producing a lateral HEMT
04/28/2011DE102010042971A1 Transistorbauelement mit einer Feldelektrode Transistor device having a field electrode
04/28/2011DE102010042691A1 Halbleitervorrichtung Semiconductor device
04/28/2011DE102006048625B4 Halbleiterbauelement Semiconductor device
04/28/2011DE102006030262B4 Verfahren zum Strukturieren von Gateelektroden durch Reduzieren der Seitenwandwinkel einer Maskenschicht Method of patterning of gate electrodes by reducing the sidewall angle of a mask layer
04/28/2011DE102004025976B4 EEPROM-Zellenstruktur mit ungleichmäßiger Kanaldielektrikumdicke und Herstellungsverfahren EEPROM cell structure with non-uniform Kanaldielektrikumdicke and manufacturing processes
04/27/2011EP2315289A2 Laser patterning of devices
04/27/2011EP2315256A2 Gallium nitride based diodes with low forward voltage and low reverse current operation
04/27/2011EP2315255A1 Surge protection device
04/27/2011EP2315254A2 Power converter integrated circuit floor plan and package
04/27/2011EP2315253A1 Technique for the growth of planar semi-polar gallium nitride
04/27/2011EP2315247A1 Trench DMOS transistor with embedded trench schottky rectifier
04/27/2011EP2315246A1 Integrated circuit
04/27/2011EP2315241A1 Semiconductor memory device
04/27/2011EP2315238A1 Heterojunction Bipolar Transistor
04/27/2011EP2315039A1 Capacitance detection type movable sensor
04/27/2011EP2313915A1 A lithographic process using a nanowire mask, and nanoscale devices fabricated using the process
04/27/2011EP2313543A2 Growth of planar non-polar {1-1 0 0} m-plane and semi-polar {1 1-2 2} gallium nitride with hydride vapor phase epitaxy (hvpe)
04/27/2011EP1630128B1 Process for producing a carbon nanotube device
04/27/2011EP1534661B1 Spirobifluorene derivatives, their preparation and uses thereof
04/27/2011CN201812819U Schottky dual-cell chip
04/27/2011CN102037576A Semiconductor light emitting element, method for manufacturing semiconductor light emitting element, and lamp
04/27/2011CN102037564A Semiconductor device
04/27/2011CN102037563A Semiconductor device and manufacturing method thereof
04/27/2011CN102037562A Isolated transistors and diodes and isolation and termination structures for semiconductor die
04/27/2011CN102037557A Non-volatile semiconductor storage device and method of manufacturing the same
04/27/2011CN102037556A Semiconductor device
04/27/2011CN102037547A Method of forming a nanocluster-comprising dielectric layer and device comprising such a layer
04/27/2011CN102036918A Dielectric film, dielectric element, and process for producing the dielectric element
04/27/2011CN102035533A 半导体器件 Semiconductor devices
04/27/2011CN102034876A Semiconductor device having SOI substrate and method for manufacturing the same
04/27/2011CN102034875A Junction field effect transistor
04/27/2011CN102034874A Non-volatile storage and manufacturing method thereof
04/27/2011CN102034873A Thin film transistor and method for manufacturing the same
04/27/2011CN102034872A Semiconductor device
04/27/2011CN102034871A Finfets and methods for forming the same
04/27/2011CN102034870A High-voltage transistor structure with reduced gate capacitance
04/27/2011CN102034869A Semiconductor device, power circuit, and manufacturing method of semiconductor device
04/27/2011CN102034868A Semiconductor device and field effect transistor
04/27/2011CN102034867A Semiconductor device and method for manufacturing same
04/27/2011CN102034866A 集成电路结构 Integrated circuit structure
04/27/2011CN102034865A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
04/27/2011CN102034864A MOS (metal oxide semiconductor) transistor and preparation method thereof
04/27/2011CN102034863A Semiconductor device, transistor having gate of around cylindrical channel and manufacturing method
04/27/2011CN102034862A High-electron-mobility transistor, field-effect transistor, epitaxial substrate, and method for manufacturing high-electron-mobility transistor
04/27/2011CN102034861A Power electronic devices, methods of manufacturing the same, and integrated circuit modules including the same
04/27/2011CN102034860A Group III nitride semiconductor device, production method therefor, power converter
04/27/2011CN102034859A Compound semiconductor device and method of manufacturing the same
04/27/2011CN102034858A Bidirectional triode thyristor for electrostatic discharge protection of radio frequency integrated circuit