| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/12/2011 | US20110108956 Etching process for semiconductors |
| 05/12/2011 | US20110108955 Semiconductor device and manufacturing method |
| 05/12/2011 | US20110108954 Growth of Planar Non-Polar M-Plane Gallium Nitride With Hydride Vapor Phase Epitaxy (HVPE) |
| 05/12/2011 | US20110108953 Fast recovery diode |
| 05/12/2011 | US20110108952 Memory capacitor made from field configurable ion-doped materials |
| 05/12/2011 | US20110108951 Semiconductor device with mim capacitor and method for manufacturing the same |
| 05/12/2011 | US20110108950 Vertical metal insulator metal capacitor |
| 05/12/2011 | US20110108948 Integrated decoupling capacitor employing conductive through-substrate vias |
| 05/12/2011 | US20110108944 Nitride semiconductor free-standing substrate, method of manufacturing the same and nitride semiconductor device |
| 05/12/2011 | US20110108943 Hybrid double box back gate silicon-on-insulator wafers with enhanced mobility channels |
| 05/12/2011 | US20110108941 Fast recovery diode |
| 05/12/2011 | US20110108937 Magnetic Tunnel Junction Structure |
| 05/12/2011 | US20110108936 Pressure detector and pressure detector array |
| 05/12/2011 | US20110108935 Silicon tab edge mount for a wafer level package |
| 05/12/2011 | US20110108934 Micro-electro-mechanical-system device with particles blocking function and method for making same |
| 05/12/2011 | US20110108933 Mems device |
| 05/12/2011 | US20110108932 Micromechanical Capacitive Sensor Element |
| 05/12/2011 | US20110108930 Borderless Contacts For Semiconductor Devices |
| 05/12/2011 | US20110108929 Enhanced atomic layer deposition |
| 05/12/2011 | US20110108928 Method for forming high-k metal gate device |
| 05/12/2011 | US20110108927 Damascene gate having protected shorting regions |
| 05/12/2011 | US20110108920 High-k/metal gate cmos finfet with improved pfet threshold voltage |
| 05/12/2011 | US20110108918 Asymmetric epitaxy and application thereof |
| 05/12/2011 | US20110108917 Semiconductor device with high voltage transistor |
| 05/12/2011 | US20110108916 Semiconductor Devices and Methods |
| 05/12/2011 | US20110108914 Mos transistor with gate trench adjacent to drain extension field insulation |
| 05/12/2011 | US20110108913 Ldmos with double ldd and trenched drain |
| 05/12/2011 | US20110108912 Methods for fabricating trench metal oxide semiconductor field effect transistors |
| 05/12/2011 | US20110108911 Semiconductor device and method for manufacturing the same |
| 05/12/2011 | US20110108910 Semiconductor device |
| 05/12/2011 | US20110108909 Vertical thin film transistor and method for manufacturing the same and display device including the vertical thin film transistor and method for manufacturing the same |
| 05/12/2011 | US20110108908 Multilayered box in fdsoi mosfets |
| 05/12/2011 | US20110108907 Semiconductor device and method for manufacturing same |
| 05/12/2011 | US20110108906 Non-volatile semiconductor memory device and its manufacturing method |
| 05/12/2011 | US20110108905 Nonvolatile semiconductor memory |
| 05/12/2011 | US20110108904 Dual conducting floating spacer metal oxide semiconductor field effect transistor (dcfs mosfet) and method to fabricate the same |
| 05/12/2011 | US20110108903 Method for fabricating a flash memory cell utilizing a high-K metal gate process and related structure |
| 05/12/2011 | US20110108902 Memory with a read-only eeprom-type structure |
| 05/12/2011 | US20110108900 Bi-directional self-aligned fet capacitor |
| 05/12/2011 | US20110108899 Ferroelectric organic memories with ultra-low voltage operation |
| 05/12/2011 | US20110108898 Spin memory and spin fet |
| 05/12/2011 | US20110108896 Wafer level chip scale package and process of manufacture |
| 05/12/2011 | US20110108895 Method of forming asymmetric spacers and methods of fabricating semiconductor device using asymmetric spacers |
| 05/12/2011 | US20110108894 Method of forming strained structures in semiconductor devices |
| 05/12/2011 | US20110108892 Detector of biological or chemical material and corresponding array of detectors |
| 05/12/2011 | US20110108887 Multilayer barrier iii-nitride transistor for high voltage electronics |
| 05/12/2011 | US20110108886 Method of controlling stress in group-iii nitride films deposited on substrates |
| 05/12/2011 | US20110108885 Semiconductor device and method of manufacturing a semiconductor device |
| 05/12/2011 | US20110108883 Semiconductor device and manufacturing method thereof |
| 05/12/2011 | US20110108863 Method for manufacturing an electro-optical device |
| 05/12/2011 | US20110108855 Method of forming vias in silicon carbide and resulting devices and circuits |
| 05/12/2011 | US20110108854 Substantially lattice matched semiconductor materials and associated methods |
| 05/12/2011 | US20110108853 Compound semiconductor device |
| 05/12/2011 | US20110108849 Tft-lcd pixel unit and method for manufacturing the same |
| 05/12/2011 | US20110108847 Thin film transistor, method of fabricating the same, organic light emitting diode display device having the same, and method of fabricating the same |
| 05/12/2011 | US20110108842 Display device and electronic apparatus |
| 05/12/2011 | US20110108841 Semiconductor device, manufacturing method thereof, and display apparatus using the semiconductor device |
| 05/12/2011 | US20110108838 Electro-mechanical transducer, an electro-mechanical converter, and manufacturing methods of the same |
| 05/12/2011 | US20110108837 Semiconductor device and manufacturing method thereof |
| 05/12/2011 | US20110108836 Semiconductor device |
| 05/12/2011 | US20110108835 Transistors, methods of manufacturing a transistor and electronic devices including a transistor |
| 05/12/2011 | US20110108834 Semiconductor device |
| 05/12/2011 | US20110108833 Semiconductor device |
| 05/12/2011 | US20110108830 Thin film transistor and organic light emitting display device using the same |
| 05/12/2011 | US20110108829 Switching device and method of manufacturing the same |
| 05/12/2011 | US20110108805 Electronic device, light-receiving and light-emitting device, electronic integrated circuit and optical integrated circuit using the devices |
| 05/12/2011 | US20110108804 Maskless Process for Suspending and Thinning Nanowires |
| 05/12/2011 | US20110108803 Vertical nanowire fet devices |
| 05/12/2011 | US20110108802 Metal-Free Integrated Circuits Comprising Graphene and Carbon Nanotubes |
| 05/12/2011 | US20110108801 Single-crystal semiconductor layer with heteroatomic macro-network |
| 05/12/2011 | US20110108800 Silicon based solid state lighting |
| 05/12/2011 | US20110108799 Nanoparticles |
| 05/12/2011 | US20110108795 Molecular devices and methods of manufacturing the same |
| 05/12/2011 | US20110108793 Junctions comprising molecular bilayers for the use in electronic devices |
| 05/12/2011 | US20110108108 Flash light annealing for thin films |
| 05/12/2011 | DE102010060229A1 Halbleitervorrichtung mit Halbleiterzonen und Herstellungsverfahren hierfür A semiconductor device comprising semiconductor zones and manufacturing method thereof |
| 05/12/2011 | DE102010037889A1 Halbleitervorrichtungen und -verfahren Semiconductor devices and methods |
| 05/12/2011 | DE102009051828A1 Ein Halbleiterbauelement und ein Verfahren zur Herstellung eines Halbleiterbauelements A semiconductor device and a method of manufacturing a semiconductor device |
| 05/12/2011 | DE102009046606A1 Schutzelement für elektronische Schaltungen Element for protecting electronic circuits |
| 05/12/2011 | DE102009046596A1 Schottkydiode Schottky |
| 05/12/2011 | DE102009046260A1 Halbleiterbauelement mit Austauschgateelektrodenstrukturen mit einer verbesserten Diffusionsbarriere A semiconductor device with replacement gate electrode structures having an improved diffusion barrier |
| 05/12/2011 | DE102009046250A1 Kantenverrundung in einem Austauschgateverfahren auf der Grundlage eines Opferfüllmaterials, das vor der Abscheidung des Austrittsarbeitsmetalls aufgebracht wird Rounding of edges in an exchange gate process on the basis of a sacrificial filler material is applied prior to the deposition of the metal work function |
| 05/12/2011 | DE102009046248A1 Halbleitersicherungen in einem Halbleiterbauelement mit Metallgates Semiconductor fuses in a semiconductor device with metal gates |
| 05/12/2011 | DE102009046245A1 Metallgateelektrodenstrukturen mit großem ε, die durch eine separate Abtragung von Platzhaltermaterialien in Transistoren unterschiedlicher Leitfähigkeitsart hergestellt sind Metal gate electrode structures with large ε, which are produced by a separate ablation wildcard materials in transistors of different conductivity |
| 05/12/2011 | DE102009046241A1 Verformungsverstärkung in Transistoren, die eine eingebettete verformungsinduzierende Halbleiterlegierung besitzen, durch Kantenverrundung an der Oberseite der Gateelektrode Deformation amplification in transistors having an embedded strain-inducing semiconductor alloy, by rounding of the edges at the top of the gate electrode |
| 05/12/2011 | DE102008052595B4 Verfahren zur Herstellung eines Halbleiterbauelements als High-Electron-Mobility-Transistorhalbleiterbauelement (HEMT) mit feldabschwächender Platte und Halbleiterbauelement A method for manufacturing a semiconductor device as a high-electron-mobility transistor semiconductor device (HEMT) with field-weakening board and semiconductor device |
| 05/12/2011 | DE102006055151B4 Halbleiterbauelement mit Halbleiterzone sowie Verfahren zu dessen Herstellung A semiconductor device with semiconductor region and to processes for the preparation thereof |
| 05/12/2011 | DE102006019835B4 Transistor mit einem Kanal mit Zugverformung, der entlang einer kristallographischen Orientierung mit erhöhter Ladungsträgerbeweglichkeit orientiert ist Transistor having a channel with a tensile strain, which is oriented along a crystallographic orientation with increased charge carrier mobility |
| 05/11/2011 | EP2320482A2 Highly efficient gallium nitride based light emitting diodes via surface roughening |
| 05/11/2011 | EP2320468A1 Semiconductor device, method for manufacturing semiconductor device, transistor substrate, light emitting device and display device |
| 05/11/2011 | EP2320467A1 Resin composition, gate insulating layer and organic thin film transistor |
| 05/11/2011 | EP2320466A1 Semiconductor device and semiconductor device manufacturing method |
| 05/11/2011 | EP2320465A1 Schottky barrier diode and method for manufacturing schottky barrier diode |
| 05/11/2011 | EP2320456A1 Complementary logical gate device |
| 05/11/2011 | EP2320452A1 Fast recovery diode and its manufacturing method |
| 05/11/2011 | EP2320451A1 Fast recovery Diode |
| 05/11/2011 | EP2319083A2 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making |
| 05/11/2011 | EP2319080A1 Three-dimensional cmos circuit on two offset substrates and method for making same |
| 05/11/2011 | EP2319077A1 Body contact for sram cell comprising double-channel transistors |
| 05/11/2011 | EP2319076A1 Substrate for an electronic or electromechanical component and nano-elements |