| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/21/2011 | CN102194883A Semiconductor device and method of manufacturing the same |
| 09/21/2011 | CN102194882A Semiconductor device |
| 09/21/2011 | CN102194881A Semiconductor device and a manufacturing method thereof |
| 09/21/2011 | CN102194880A Device structure with channel-oxide-nanotube super junction and preparation method thereof |
| 09/21/2011 | CN102194879A Semiconductor device |
| 09/21/2011 | CN102194878A Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET and method |
| 09/21/2011 | CN102194877A Electronic device and process of forming the same |
| 09/21/2011 | CN102194876A Semiconductor device and method of fabricating the semiconductor device |
| 09/21/2011 | CN102194875A Method and apparatus for reducing gate resistance |
| 09/21/2011 | CN102194874A Semiconductor device and method for manufacturing the same |
| 09/21/2011 | CN102194873A Semiconductor device having multi-thickness gate dielectric |
| 09/21/2011 | CN102194872A Dual vertical channel transistor and fabrication method thereof |
| 09/21/2011 | CN102194871A Method for operating semiconductor element |
| 09/21/2011 | CN102194870A Semiconductor device and manufacturing method thereof |
| 09/21/2011 | CN102194869A Ultra-steep reverse doped metal oxide semiconductor (MOS) device with improved anti-irradiation property |
| 09/21/2011 | CN102194868A Anti-irradiation metal oxide semiconductor (MOS) device with Halo structure and preparation method thereof |
| 09/21/2011 | CN102194867A High electron mobility transistors exhibiting dual depletion and methods of manufacturing the same |
| 09/21/2011 | CN102194866A 场效应晶体管 FET |
| 09/21/2011 | CN102194865A High-power insulated gate bipolar translator (IGBT) flat pressed and connected packaging structure |
| 09/21/2011 | CN102194864A Groove-grid-type insulated gate bipolar transistor with body electrode |
| 09/21/2011 | CN102194863A Semiconductor device and method of manufacturing semiconductor device |
| 09/21/2011 | CN102194862A Semiconductor device |
| 09/21/2011 | CN102194861A Semiconductor device |
| 09/21/2011 | CN102194860A Green transistors |
| 09/21/2011 | CN102194859A High-mobility group III-V semiconductor metal oxide semiconductor (MOS) interface structure |
| 09/21/2011 | CN102194858A 半导体装置 Semiconductor device |
| 09/21/2011 | CN102194848A Spin memory and spin transistor |
| 09/21/2011 | CN102194832A Silicon on insulator (SOI) pressure resistant structure with interface lateral variation doping |
| 09/21/2011 | CN102194820A Data path cell on an SeOI substrate with a buried back control gate beneath the insulating layer |
| 09/21/2011 | CN102194819A Enhanced GaN heterojunction field effect transistor based on metal oxide semiconductor (MOS) control |
| 09/21/2011 | CN102194818A P-type epitaxial layer-based binary coded decimal (BCD) integrated device and manufacturing method thereof |
| 09/21/2011 | CN102194798A Short-circuit deembedding test structure for micro-capacitance MOS (Metal Oxide Semiconductor) varactor and variode |
| 09/21/2011 | CN102194756A Fin field effect transistor and method of making the same |
| 09/21/2011 | CN102194754A Semiconductor device and method of fabricating the same |
| 09/21/2011 | CN102194748A Semiconductor device and manufacture method thereof |
| 09/21/2011 | CN102194700A Manufacturing method of super-junction semiconductor device |
| 09/21/2011 | CN102194699A Shielded gate trench MOS with improved source pickup layout |
| 09/21/2011 | CN102194696A Low-grid-impedance groove-type power semiconductor structure and manufacturing method thereof |
| 09/21/2011 | CN102194693A Semiconductor device and manufacturing method thereof |
| 09/21/2011 | CN102194688A Power semiconductor device and method of manufacturing the same |
| 09/21/2011 | CN102194683A Electrode portion structure |
| 09/21/2011 | CN102194026A Sinker MOS (metal oxide semiconductor) capacitor model and establishing method thereof |
| 09/21/2011 | CN102191467A Metal line, manufacturing method of thin film, TFT array panel, and method for manufacturing the same |
| 09/21/2011 | CN101807517B Method for forming copper-interconnection MIM capacitor structure and formed structure thereof |
| 09/21/2011 | CN101719500B Composite material inversion mode all-around-gate CMOS field effect transistor |
| 09/21/2011 | CN101714551B Low leakage capacitors including portions in inter-layer dielectrics |
| 09/21/2011 | CN101663762B Oxynitride semiconductor |
| 09/21/2011 | CN101636828B Active matrix substrate |
| 09/21/2011 | CN101258606B Semiconductor device |
| 09/21/2011 | CN101211968B Manufacture method for thyristor for electro-static discharge |
| 09/21/2011 | CN101043003B Process for fabricating a semiconductor device with metallic gate and semiconductor device |
| 09/20/2011 | US8024689 Semiconductor integrated circuit apparatus with low wiring resistance |
| 09/20/2011 | US8023310 Nonvolatile memory cell including carbon storage element formed on a silicide layer |
| 09/20/2011 | US8023057 Thin film transistor array panel used for liquid crystal display and a manufacturing method thereof |
| 09/20/2011 | US8023055 Semiconductor device and method of manufacturing the semiconductor device |
| 09/20/2011 | US8023042 Semiconductor device and method of manufacturing therefor |
| 09/20/2011 | US8022610 Electronic device containing carbon nanotubes |
| 09/20/2011 | US8022559 Substrate for a display panel, and a display panel having the same |
| 09/20/2011 | US8022557 Near chip scale semiconductor packages |
| 09/20/2011 | US8022551 Solder composition for electronic devices |
| 09/20/2011 | US8022547 Non-volatile memory cells including small volume electrical contact regions |
| 09/20/2011 | US8022537 Semiconductor device |
| 09/20/2011 | US8022536 Semiconductor substrate for build-up packages |
| 09/20/2011 | US8022533 Circuit apparatus provided with asperities on substrate surface |
| 09/20/2011 | US8022529 Semiconductor device and method for manufacturing the same |
| 09/20/2011 | US8022507 Varactor diodes |
| 09/20/2011 | US8022506 SOI device with more immunity from substrate voltage |
| 09/20/2011 | US8022505 Semiconductor device structure and integrated circuit therefor |
| 09/20/2011 | US8022504 Semiconductor device having capacitor with upper electrode whose circumference is made long and its manufacture method |
| 09/20/2011 | US8022499 Semiconductor memory device including cell isolation structure using inactive transistors |
| 09/20/2011 | US8022498 Electrostatic discharge management apparatus, systems, and methods |
| 09/20/2011 | US8022497 Semiconductor device comprising insulating film |
| 09/20/2011 | US8022496 Semiconductor structure and method of manufacture |
| 09/20/2011 | US8022491 High aspect ratio all SiGe capacitively coupled MEMS devices |
| 09/20/2011 | US8022490 Micro electro-mechanical sensor (MEMS) fabricated with ribbon wire bonds |
| 09/20/2011 | US8022489 Air tunnel floating gate memory cell |
| 09/20/2011 | US8022486 CMOS semiconductor device |
| 09/20/2011 | US8022483 Semiconductor and manufacturing method for the same |
| 09/20/2011 | US8022482 Device configuration of asymmetrical DMOSFET with schottky barrier source |
| 09/20/2011 | US8022481 Robust shallow trench isolation structures and a method for forming shallow trench isolation structures |
| 09/20/2011 | US8022480 Semiconductor device and method for manufacturing the same |
| 09/20/2011 | US8022479 Semiconductor apparatus |
| 09/20/2011 | US8022478 Method of forming a multi-fin multi-gate field effect transistor with tailored drive current |
| 09/20/2011 | US8022477 Semiconductor apparatus having lateral type MIS transistor |
| 09/20/2011 | US8022476 Semiconductor device having vertical and horizontal type gates and method for fabricating the same |
| 09/20/2011 | US8022475 Semiconductor device optimized to increase withstand voltage and reduce on resistance |
| 09/20/2011 | US8022474 Semiconductor device |
| 09/20/2011 | US8022473 Semiconductor device having reduced sub-threshold leakage |
| 09/20/2011 | US8022472 Semiconductor device and method of manufacturing semiconductor device |
| 09/20/2011 | US8022471 Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures |
| 09/20/2011 | US8022470 Semiconductor device with a trench gate structure and method for the production thereof |
| 09/20/2011 | US8022469 Semiconductor device and manufacturing method thereof |
| 09/20/2011 | US8022468 Ultraviolet radiation blocking interlayer dielectric |
| 09/20/2011 | US8022467 Nonvolatile semiconductor memory device and method of fabricating the same |
| 09/20/2011 | US8022466 Non-volatile memory cells having a polysilicon-containing, multi-layer insulating structure, memory arrays including the same and methods of operating the same |
| 09/20/2011 | US8022465 Low hydrogen concentration charge-trapping layer structures for non-volatile memory |
| 09/20/2011 | US8022464 Semiconductor memory device and manufacturing method thereof |
| 09/20/2011 | US8022463 Semiconductor device and method of manufacturing the same |
| 09/20/2011 | US8022462 Methods of forming shallow trench isolation structures with buried bit lines in non-volatile memories |
| 09/20/2011 | US8022461 Semiconductor device and method for fabricating semiconductor device |