| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/28/2011 | EP2369040A1 In situ dopant implantation and growth of a III-nitride semiconductor body |
| 09/28/2011 | EP2368962A2 Luminescent materials having nanocrystals exhibiting multi-modal energy level distributions |
| 09/28/2011 | EP2368270A1 An improved rf cmos transistor design |
| 09/28/2011 | EP2368267A2 Trigate static random-access memory with indepenent source and drain engineering, and devices made therefrom |
| 09/28/2011 | EP1836732B1 Semiconductor structure comprising a HfSiN metal gate and method of forming the same |
| 09/28/2011 | EP1787320B1 Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor |
| 09/28/2011 | EP1443130B1 Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
| 09/28/2011 | EP1350277B1 Method for electrically induced breakdown of nanostructures |
| 09/28/2011 | EP1173889B1 Device for protecting against electrostatic discharge |
| 09/28/2011 | CN201994305U 后通孔互联型圆片级mosfet封装结构 After the through-hole interconnection type wafer level package structure mosfet |
| 09/28/2011 | CN201994304U 沟槽互联型圆片级mosfet封装结构 Trench-type wafer-level interconnection structure mosfet package |
| 09/28/2011 | CN201994303U 通孔互联型圆片级mosfet封装结构 Through-hole interconnection type wafer level package structure mosfet |
| 09/28/2011 | CN201994302U 过热自我保护半导体三极管 Self-semiconductor transistor overheat protection |
| 09/28/2011 | CN201994301U 降低高频损耗的高频晶体管 Reduce high frequency loss of high frequency transistors |
| 09/28/2011 | CN201994300U Power transistor with copper wire structure |
| 09/28/2011 | CN201994299U 一种静电保护结构 An electrostatic protection structure |
| 09/28/2011 | CN1477910B Active matrix organic luminous diode device and its thin film transistor |
| 09/28/2011 | CN102203949A Rectifying antenna device having nanostructure diode |
| 09/28/2011 | CN102203947A Method for manufacturing thin film transistor and thin film transistor |
| 09/28/2011 | CN102203946A Doping profile modification in p3i process |
| 09/28/2011 | CN102203945A Reverse-conducting semiconductor device |
| 09/28/2011 | CN102203936A Semiconductor device and method for manufacturing same |
| 09/28/2011 | CN102203925A Method for producing semiconductor element |
| 09/28/2011 | CN102203924A Optimized compressive sige channel pmos transistor with engineered ge profile and optimized silicon cap layer |
| 09/28/2011 | CN102203923A Methods of forming a plurality of transistor gates, and methods of forming a plurality of transistor gates having at least two different work functions |
| 09/28/2011 | CN102203922A Thin film diode and method for manufacturing same |
| 09/28/2011 | CN102203916A Sputtering target for forming thin film transistor wiring film |
| 09/28/2011 | CN102203915A Recessed drain and source areas in combination with advanced silicide formation in transistors |
| 09/28/2011 | CN102203840A Circuit substrate, display panel, and display device |
| 09/28/2011 | CN102203597A Methods and apparatus for detecting molecular interactions using fet arrays |
| 09/28/2011 | CN102201455A Index-doped GaAs (Gallium Arsenide) Schottky variable capacitance diode and production method of same |
| 09/28/2011 | CN102201454A Junction field effect transistor element |
| 09/28/2011 | CN102201453A Memory unit and nonvolatile memory device and foming method thereof |
| 09/28/2011 | CN102201452A Nonvolatile memory and manufacturing method thereof |
| 09/28/2011 | CN102201451A Oxide thin film transistor (TFT) with buffer layer top grid structure |
| 09/28/2011 | CN102201450A Tunneling field effect transistor and preparation method thereof |
| 09/28/2011 | CN102201449A Low-heat-resistance packaging structure of power MOS (Metal Oxide Semiconductor) device |
| 09/28/2011 | CN102201448A High-voltage PMOS (P-channel metal oxide semiconductor) dual-trench isolated SOI (silicon on insulator) chip |
| 09/28/2011 | CN102201447A Gate medium field effect transistor with high dielectric constant and manufacturing method thereof |
| 09/28/2011 | CN102201446A Grounded-grid NMOS (N-channel metal oxide semiconductor) unit for antistatic protection and antistatic protection structure thereof |
| 09/28/2011 | CN102201445A Partial silicon on insulator (PSOI) lateral super-junction power semiconductor device |
| 09/28/2011 | CN102201444A 半导体装置 Semiconductor device |
| 09/28/2011 | CN102201443A Substrate, method of manufacturing the substrate and organic light-emitting display apparatus |
| 09/28/2011 | CN102201442A Heterojunction field effect transistor based on channel array structure |
| 09/28/2011 | CN102201441A Semiconductor device |
| 09/28/2011 | CN102201440A Insulated gate bipolar transistor |
| 09/28/2011 | CN102201439A Trench-type insulated gate bipolar transistor (Trench IGBT) with enhanced internal conductivity modulation |
| 09/28/2011 | CN102201438A 半导体装置及其制造方法 Semiconductor device and manufacturing method |
| 09/28/2011 | CN102201437A Trench insulated gate bipolar transistor and manufacturing method thereof |
| 09/28/2011 | CN102201436A Semiconductor structure and manufacturing method thereof |
| 09/28/2011 | CN102201435A Semiconductor structure and production method thereof |
| 09/28/2011 | CN102201434A High-frequency thyristor |
| 09/28/2011 | CN102201433A Semiconductor device and method of manufacturing the same |
| 09/28/2011 | CN102201413A PMOS flash cell using bottom poly control gate |
| 09/28/2011 | CN102201409A Power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device with tungsten spacing layer and production method thereof |
| 09/28/2011 | CN102201408A Capacitor |
| 09/28/2011 | CN102201407A Capacitor on chip |
| 09/28/2011 | CN102201406A Bipolar CMOS DMOS (BCD) integrated device based on N type extension layer and manufacture method thereof |
| 09/28/2011 | CN102201405A Imaging-based silicon-on-insulator-electro-static discharge (SOI-ESD) protective device and manufacturing method thereof |
| 09/28/2011 | CN102201370A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 09/28/2011 | CN102201368A Production method and structure of silicon chip and substrate co-constructed surface adhesive diode element |
| 09/28/2011 | CN102201346A CCD (charge coupled device) production method capable of improving yield |
| 09/28/2011 | CN102201344A Gate metal routing for transistor with checkerboarded layout |
| 09/28/2011 | CN102201343A Preparation method of Nano MOS (Metal Oxide Semiconductor) device and Nano MOS device |
| 09/28/2011 | CN102201342A Method for improving reverse breakdown voltage from P-well to N-well and CMOS (Complementary Metal-Oxide-Semiconductor) silicon device |
| 09/28/2011 | CN102199166A Functional alkoxyl rear-earth metal lanthanum coordination compound, synthesis method thereof and application thereof |
| 09/28/2011 | CN102198925A MEMS device and forming method thereof |
| 09/28/2011 | CN101877315B Method for improving breakdown voltage of LDMOS devices |
| 09/28/2011 | CN101675525B Semiconductor device |
| 09/28/2011 | CN101647122B Electronic device including channel regions lying at different elevations and processes of forming the same |
| 09/28/2011 | CN101636844B Planar extended drain transistor and method of producing the same |
| 09/28/2011 | CN101589466B Electronic component |
| 09/28/2011 | CN101569001B Method for manufacturing flexible semiconductor device and flexible semiconductor device |
| 09/28/2011 | CN101447492B Semiconductor display device |
| 09/28/2011 | CN101425478B Method for providing self-alignment contact in semiconductor device set |
| 09/28/2011 | CN101399265B Semiconductor device |
| 09/28/2011 | CN101356627B Enhanced multi-volatile memory device with resonant tunnel barrier |
| 09/28/2011 | CN101308781B Semiconductor apparatus, thin film transistor substrate, display apparatus and method for making same |
| 09/28/2011 | CN101281930B Optical signal transfer element |
| 09/28/2011 | CN101261395B Liquid crystal display |
| 09/28/2011 | CN101203954B Semiconductor device and method for making the same |
| 09/28/2011 | CN101189625B Semiconductor device, method for manufacturing the same, and method for manufacturing antenna |
| 09/28/2011 | CN101091257B Method and process intermediate for electrostatic discharge protection in flat panel imaging detectors |
| 09/27/2011 | US8027553 Connected body and optical transceiver module |
| 09/27/2011 | US8026991 Thin film transistor substrate |
| 09/27/2011 | US8026779 Vibrator, resonator using the same and electromechanical filter using the same |
| 09/27/2011 | US8026614 Semiconductor IC-embedded substrate and method for manufacturing same |
| 09/27/2011 | US8026613 Interconnections for flip-chip using lead-free solders and having reaction barrier layers |
| 09/27/2011 | US8026609 Semiconductor device and method for producing the same |
| 09/27/2011 | US8026608 Stackable electronic package |
| 09/27/2011 | US8026607 Semiconductor apparatus |
| 09/27/2011 | US8026602 Fabrication method of semiconductor device having conductive bumps |
| 09/27/2011 | US8026601 Encapsulated wafer level package with protection against damage and manufacturing method |
| 09/27/2011 | US8026599 Method of protecting integrated circuits |
| 09/27/2011 | US8026595 Semiconductor device having hermitically sealed active area and electrodes |
| 09/27/2011 | US8026581 Gallium nitride material devices including diamond regions and methods associated with the same |
| 09/27/2011 | US8026577 Semiconductor apparatus having a triple well structure and manfacturing method thereof |
| 09/27/2011 | US8026576 Wiring board |
| 09/27/2011 | US8026575 Semiconductor device, electronic device, and manufacturing method of the same |
| 09/27/2011 | US8026574 Anti-fuse memory cell |