H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2011
10/25/2011	US8044395 Semiconductor memory apparatus for controlling pads and multi-chip package having the same
10/25/2011	US8044393 Light emitting device and manufacturing method thereof
10/25/2011	US8044391 Thin film transistor and method of fabricating the same
10/25/2011	US8044385 Semiconductor light emitting device and method for manufacturing the same
10/25/2011	US8044383 Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes
10/25/2011	US8044382 Light-emitting device and method for manufacturing the same
10/25/2011	US8044381 Light emitting diode (LED)
10/25/2011	US8044380 Nitride semiconductor light emitting device and fabrication method thereof
10/25/2011	US8043952 Method of forming aluminum oxide layer and method of manufacturing charge trap memory device using the same
10/25/2011	US8043949 Method of manufacturing silicon carbide semiconductor device
10/25/2011	US8043929 Semiconductor substrate and method for production thereof
10/25/2011	US8043906 Method of forming a III-nitride selective current carrying device including a contact in a recess
10/25/2011	US8043905 Semiconductor device and method of fabricating the same
10/25/2011	US8043893 Thermo-compression bonded electrical interconnect structure and method
10/25/2011	US8043881 Electronic device including MEMS devices and holed substrates, in particular of the LGA or BGA type
10/25/2011	US8043869 Magnetic memory device and method of fabricating the same
10/25/2011	US8043731 Vicinal gallium nitride substrate for high quality homoepitaxy
10/25/2011	US8042392 Acceleration sensor
10/20/2011	WO2011130044A1 Wide band-gap mosfets having a heterojunction under gate trenches thereof and related methods of forming such devices
10/20/2011	WO2011129952A1 Nanowire circuits in matched devices
10/20/2011	WO2011129456A1 Deposition method and method for manufacturing semiconductor device
10/20/2011	WO2011129443A1 Semiconductor device
10/20/2011	WO2011129386A1 Crosslinked composition
10/20/2011	WO2011129234A1 Semiconductor device and method for manufacturing same
10/20/2011	WO2011129233A1 Semiconductor device
10/20/2011	WO2011129227A1 Semiconductor device, process for production of semiconductor device, and display device
10/20/2011	WO2011129037A1 Thin film transistor substrate, method for producing same, and display device
10/20/2011	WO2011128994A1 Silicon carbide semiconductor device and method for manufacturing same
10/20/2011	WO2011128932A1 Organic semiconductor device and method for manufacturing organic semiconductor device
10/20/2011	WO2011127727A1 Semiconductor structure for preventing leakage
10/20/2011	WO2011127634A1 Semiconductor device and manufacturing method thereof
10/20/2011	WO2011087610A3 Conductivity improvements for iii-v semiconductor devices
10/20/2011	WO2011087606A3 Techniques for forming contacts to quantum well transistors
10/20/2011	WO2011084397A3 Body contacted transistor with reduced parasitic capacitance
10/20/2011	WO2011051015A3 Aluminum containing metal layer for threshold voltage shift
10/20/2011	US20110256718 Thin films
10/20/2011	US20110256706 Method of forming a semiconductor structure
10/20/2011	US20110256702 Thin film transistor and display device, and method for manufacturing thereof
10/20/2011	US20110255348 Non-Volatile Memory Cell with BTBT Programming
10/20/2011	US20110255335 Charge trap memory having limited charge diffusion
10/20/2011	US20110255334 Flash memory having multi-level architecture
10/20/2011	US20110255045 Display substrate, liquid crystal display including the display substrate, and method of manufacturing the display substrate
10/20/2011	US20110255022 Semiconductor device and method of fabricating the same
10/20/2011	US20110255021 Array substrate for liquid crystal panel, and liquid crystal display device comprising the substrate
10/20/2011	US20110254163 Sleeve insulators and semiconductor device including the same
10/20/2011	US20110254142 Stacked structure
10/20/2011	US20110254141 Physical structure for use in a physical unclonable
10/20/2011	US20110254140 Photoresists and methods for use thereof
10/20/2011	US20110254137 Multi-directional trenching of a die in manufacturing superjunction devices
10/20/2011	US20110254135 Iii-nitride semiconductor growth substrate, iii-nitride semiconductor epitaxial substrate, iii-nitride semiconductor element, iii-nitride semiconductor freestanding substrate, and method for fabricating these
10/20/2011	US20110254134 Method of Group III Metal - Nitride Material Growth Using Metal Organic Vapor Phase Epitaxy
10/20/2011	US20110254133 Photoresists and methods for use thereof
10/20/2011	US20110254130 Semiconductor device including metal-insulator-metal capacitor arrangement
10/20/2011	US20110254129 Electrical components for microelectronic devices and methods of forming the same
10/20/2011	US20110254128 Electrode for energy storage device and method for manufacturing the same
10/20/2011	US20110254127 Method and device for a dram capacitor having low depletion ratio
10/20/2011	US20110254126 Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same
10/20/2011	US20110254120 Semiconductor integrated circuit
10/20/2011	US20110254118 Schottky Diode with Control Gate for Optimization of the On State Resistance, the Reverse Leakage, and the Reverse Breakdown
10/20/2011	US20110254114 Magnetoresistive effect element
10/20/2011	US20110254113 St-ram magnetic element configurations to reduce switching current
10/20/2011	US20110254112 Semiconductor memory device and manufacturing method thereof
10/20/2011	US20110254111 Packaged acoustic transducer device with shielding from electromagnetic interference
10/20/2011	US20110254110 Mems device having a movable electrode
10/20/2011	US20110254109 Integrated circuit with spurrious acoustic mode suppression and method of manufacture thereof
10/20/2011	US20110254107 Method and apparatus for forming mems device
10/20/2011	US20110254106 Semiconductor device and semiconductor device manufacturing method
10/20/2011	US20110254105 Strained Semiconductor Device with Recessed Channel
10/20/2011	US20110254096 Semiconductor device having non-silicide region in which no silicide is formed on diffusion layer
10/20/2011	US20110254094 Semiconductor device
10/20/2011	US20110254090 Raised source/drain structure for enhanced strain coupling from stress liner
10/20/2011	US20110254089 Semiconductor integrated circuit and method of fabricating same
10/20/2011	US20110254088 Power MOSFET With Embedded Recessed Field Plate and Methods of Fabrication
10/20/2011	US20110254087 Semiconductor device and a method of manufacturing the same
10/20/2011	US20110254086 Shielded trench mosfet with multiple trenched floating gates as termination
10/20/2011	US20110254085 Semiconductor integrated circuit device having reduced unit cell area and method for manufacturing the same
10/20/2011	US20110254084 Structures and methods of fabricating dual gate devices
10/20/2011	US20110254083 Semiconductor device and method for forming the same
10/20/2011	US20110254082 Semiconductor device and method for forming the same
10/20/2011	US20110254081 Semiconductor device and method of fabricating the same
10/20/2011	US20110254080 Tunnel field effect transistor
10/20/2011	US20110254079 Non-volatile memory devices
10/20/2011	US20110254078 Method for depositing silicon nitride film, computer-readable storage medium, and plasma cvd device
10/20/2011	US20110254077 Semiconductor device and method of fabricating the same
10/20/2011	US20110254076 High density flash memory cell device, cell string and fabrication method therefor
10/20/2011	US20110254075 Use of dilute steam ambient for improvement of flash devices
10/20/2011	US20110254073 Nonvolatile semiconductor memory device and method of manufacturing the same
10/20/2011	US20110254072 Charge storage structures and methods
10/20/2011	US20110254071 Shielded trench mosfet with multiple trenched floating gates as termination
10/20/2011	US20110254070 Trench mosfet with trenched floating gates in termination
10/20/2011	US20110254069 Floating gate type nonvolatile memory device and related methods of manufacture and operation
10/20/2011	US20110254068 Semiconductor device and manufacturing method thereof
10/20/2011	US20110254066 Semiconductor device
10/20/2011	US20110254064 Semiconductor device with carbon atoms implanted under gate structure
10/20/2011	US20110254063 Semiconductor device structure and method for manufacturing the same
10/20/2011	US20110254062 Field effect transistor and method of manufacturing the same
10/20/2011	US20110254061 Transistor and method of fabricating the same
10/20/2011	US20110254060 Metal Gate Structure and Fabricating Method thereof
10/20/2011	US20110254059 Structure and method for manufacturing asymmetric devices
10/20/2011	US20110254058 Gate-All-Around CMOSFET devices

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