| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/27/2005 | CN1645227A Manufacture of thin-membrane transistor of liquid-crystal displaying device |
| 07/27/2005 | CN1645226A Manufacture of thin-membrane transistor of liquid crystal displaying device |
| 07/27/2005 | CN1645225A Liquid crystal displaying device |
| 07/27/2005 | CN1645222A Manufacture of display device |
| 07/27/2005 | CN1645201A Liquid crystal panel and manufacture thereof |
| 07/27/2005 | CN1645200A Liquid crystal panel and manufacture thereof |
| 07/27/2005 | CN1645198A Device having thin film transistor |
| 07/27/2005 | CN1645197A Liquid crystal displaying device |
| 07/27/2005 | CN1645193A Electro-optical device, method of manufacturing the same, and electronic apparatus |
| 07/27/2005 | CN1645152A Capacitive sensor for dynamical quantity |
| 07/27/2005 | CN1645076A Method for improving excitatory performance of micromechanical resonance pressure sensor with single beam |
| 07/27/2005 | CN1212674C Transverse buffer P-type MOS transistors |
| 07/27/2005 | CN1212673C Built-in protective P-type high-voltage MOS transistors |
| 07/27/2005 | CN1212670C Silicon controlled rectifier having protective ring control circuit |
| 07/27/2005 | CN1212668C Integrated circuit with double floated gate-pole storage crystal cell and manufacturing method thereof |
| 07/27/2005 | CN1212654C Method for mfg. thin film transistor |
| 07/27/2005 | CN1212641C Method for improving homogeneity and reducing roughness of silicon medium |
| 07/27/2005 | CN1212621C Flash memory wordline tracking across whole chip |
| 07/26/2005 | US6922363 Method for operating a NOR-array memory module composed of P-type memory cells |
| 07/26/2005 | US6922361 Non-volatile memory device |
| 07/26/2005 | US6922357 Non-volatile semiconductor memory device |
| 07/26/2005 | US6922328 Semiconductor device and method for manufacturing the same |
| 07/26/2005 | US6922217 Amorphous silicon thin-film transistor liquid crystal display |
| 07/26/2005 | US6921982 FET channel having a strained lattice structure along multiple surfaces |
| 07/26/2005 | US6921964 Semiconductor device having a non-volatile memory transistor formed on a semiconductor |
| 07/26/2005 | US6921963 Narrow fin FinFET |
| 07/26/2005 | US6921962 Integrated circuit having a thin film resistor located within a multilevel dielectric between an upper and lower metal interconnect layer |
| 07/26/2005 | US6921960 Capacitor element with an opening portion formed in a peripheral circuit |
| 07/26/2005 | US6921958 IGBT with a Schottky barrier diode |
| 07/26/2005 | US6921957 Low forward voltage drop schottky barrier diode and manufacturing method therefor |
| 07/26/2005 | US6921953 Self-aligned, low-resistance, efficient MRAM read/write conductors |
| 07/26/2005 | US6921951 Thin film transistor and pixel structure thereof |
| 07/26/2005 | US6921950 Semiconductor device |
| 07/26/2005 | US6921949 Semiconductor integrated circuit device |
| 07/26/2005 | US6921945 Semiconductor device with structure for improving breakdown voltage |
| 07/26/2005 | US6921944 Semiconductor device formed on a single semiconductor substrate having semiconductor elements operated at a predetermined voltage and a voltage lower than that |
| 07/26/2005 | US6921943 System and method for reducing soft error rate utilizing customized epitaxial layers |
| 07/26/2005 | US6921942 Structure of a lateral diffusion MOS transistor in widespread use as a power control device |
| 07/26/2005 | US6921941 High withstand voltage field effect semiconductor device with a field dispersion region |
| 07/26/2005 | US6921940 MOS transistor and fabrication method thereof |
| 07/26/2005 | US6921939 Power MOSFET and method for forming same using a self-aligned body implant |
| 07/26/2005 | US6921938 Double diffused field effect transistor having reduced on-resistance |
| 07/26/2005 | US6921937 Integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source |
| 07/26/2005 | US6921936 pn Varactor |
| 07/26/2005 | US6921933 Semiconductor device and method of fabricating the same |
| 07/26/2005 | US6921932 JFET and MESFET structures for low voltage, high current and high frequency applications |
| 07/26/2005 | US6921931 Electrostatic discharge protection element |
| 07/26/2005 | US6921930 Pulse-controlled bistable bidirectional electronic switch |
| 07/26/2005 | US6921925 Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) |
| 07/26/2005 | US6921919 Semiconductor device and method of forming the same |
| 07/26/2005 | US6921918 Active matrix organic electroluminescent display device simplifying fabricating process |
| 07/26/2005 | US6921917 Thin film transistor substrate and fabricating method thereof |
| 07/26/2005 | US6921913 Strained-channel transistor structure with lattice-mismatched zone |
| 07/26/2005 | US6921912 Diode/superionic conductor/polymer memory structure |
| 07/26/2005 | US6921897 Circuit and method for varying the integration time of moving charges from a photodetector |
| 07/26/2005 | US6921711 Method for forming metal replacement gate of high performance |
| 07/26/2005 | US6921709 Front side seal to prevent germanium outgassing |
| 07/26/2005 | US6921703 System and method for mitigating oxide growth in a gate dielectric |
| 07/26/2005 | US6921702 Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics |
| 07/26/2005 | US6921701 Method of manufacturing and structure of semiconductor device (DEMOS) with field oxide structure |
| 07/26/2005 | US6921700 Method of forming a transistor having multiple channels |
| 07/26/2005 | US6921699 Method for manufacturing a semiconductor device with a trench termination |
| 07/26/2005 | US6921698 Thin film transistor and fabricating method thereof |
| 07/26/2005 | US6921697 Method for making trench MIS device with reduced gate-to-drain capacitance |
| 07/26/2005 | US6921696 Vertical floating gate transistor |
| 07/26/2005 | US6921694 Method for fabricating floating gate |
| 07/26/2005 | US6921691 Transistor with dopant-bearing metal in source and drain |
| 07/26/2005 | US6921688 Method of and apparatus for integrating flash EPROM and SRAM cells on a common substrate |
| 07/26/2005 | US6921687 Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same |
| 07/26/2005 | US6921686 Method for producing insulated gate thin film semiconductor device |
| 07/26/2005 | US6921685 Method of fabricating thin film transistor |
| 07/26/2005 | US6921679 Electronic device and methods for fabricating an electronic device |
| 07/26/2005 | US6921575 Applying carbon nanotubes to low-viscosity dispersion medium to obtain a high-viscosity dispersing liquid which includes carbon nanotubes; forming a network of carbon nanotubes having electrical and/or magnetic connections by removing |
| 07/26/2005 | US6921434 Regulated growth method for laser irradiating silicon films |
| 07/26/2005 | US6920788 Acceleration sensor |
| 07/21/2005 | WO2005067138A1 Method and apparatus for effecting high-frequency amplification or oscillation |
| 07/21/2005 | WO2005067075A1 Method for the production a nanoelement field effect transistor, nanoelement-field effect transistor and surrounded gate structure |
| 07/21/2005 | WO2005067059A1 Rectifying device and electronic circuit employing same, and process for producing rectifying device |
| 07/21/2005 | WO2005067058A1 Mis field-effect transistor |
| 07/21/2005 | WO2005067057A1 Semiconductor device |
| 07/21/2005 | WO2005067056A1 Bipolar transistor, semiconductor device comprising the bipolar transistor and process for fabricating them |
| 07/21/2005 | WO2005067055A1 Transistor gate electrode having conductor material layer |
| 07/21/2005 | WO2005067049A1 Isotopically pure silicon-on-insulator wafers and method of making same |
| 07/21/2005 | WO2005067048A2 Contactless flash memory array |
| 07/21/2005 | WO2005067043A1 Monolithically integrated circuit for radio frequency applications |
| 07/21/2005 | WO2005067035A1 Method for forming non-amorphous, ultra-thin semiconductor devices using sacrificial implantation layer |
| 07/21/2005 | WO2005067026A1 A method for making a semiconductor device that includes a metal gate electrode |
| 07/21/2005 | WO2005067021A1 An amorphous etch stop for the anisotropic etching of substrates |
| 07/21/2005 | WO2005067020A2 A method of varying etch selectivities of a film |
| 07/21/2005 | WO2005067018A1 Method for producing semiconductor device |
| 07/21/2005 | WO2005067005A1 Small volume process chamber with hot inner surfaces |
| 07/21/2005 | WO2005065425A2 Localized synthesis and self-assembly of nanostructures |
| 07/21/2005 | WO2005065385A2 Power semiconductor devices and methods of manufacture |
| 07/21/2005 | WO2005065179A2 Method of manufacturing a superjunction device |
| 07/21/2005 | WO2005065144A2 Planarization method of manufacturing a superjunction device |
| 07/21/2005 | WO2005065143A2 Isotopically pure silicon-on-insulator wafers and method of making same |
| 07/21/2005 | WO2005065140A2 Method of manufacturing a superjunction device with conventional terminations |
| 07/21/2005 | WO2005065127A2 A method for forming thick dielectric regions using etched trenches |
| 07/21/2005 | WO2005065089A2 Method of manufacturing a semiconductor component, and semiconductor component formed thereby |
| 07/21/2005 | WO2005065037A2 A device for the manipulation of current |