Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2007
08/09/2007US20070181972 Integrated circuit structures with silicon germanium film incorporated as local interconnect and/or contact
08/09/2007US20070181971 Semiconductor device and method of manufacturing the same
08/09/2007US20070181970 High performance system-on-chip inductor using post passivation process
08/09/2007US20070181969 Semiconductor memory device and method of fabricating the same
08/09/2007US20070181968 Semiconductor device and method of manufacturing the same
08/09/2007US20070181967 Semiconductor device with visible indicator and method of fabricating the same
08/09/2007US20070181965 Chip element, manufacturing method thereof, and electronic device or equipment using same
08/09/2007US20070181963 Micro-electromechanical system (mems) based current and magnetic field sensor using tunneling current sensing
08/09/2007US20070181962 Wafer encapsulated microelectromechanical structure and method of manufacturing same
08/09/2007US20070181961 Intercalated superlattice compositions and related methods for modulating dielectric property
08/09/2007US20070181960 Semiconductor device, an electronic device and an electronic apparatus
08/09/2007US20070181959 Semiconductor device having gate-all-around structure and method of fabricating the same
08/09/2007US20070181958 Semiconductor device and method of forming the same
08/09/2007US20070181957 Semiconductor device having stacked transistors and method for manufacturing the same
08/09/2007US20070181956 Field-effect transistors with weakly coupled layered inorganic semiconductors
08/09/2007US20070181955 Metal oxide semiconductor transistor
08/09/2007US20070181954 Semiconductor device and method of manufacture thereof
08/09/2007US20070181953 Semiconductor device having stacked transistors and method of forming the same
08/09/2007US20070181951 Selective CESL structure for CMOS application
08/09/2007US20070181950 Semiconductor device and its manufacturing method capable of suppressing junction leakage current
08/09/2007US20070181949 Transistor and novolatile memory device including the same
08/09/2007US20070181944 Electronic device including space-apart radiation regions and a process for forming the same
08/09/2007US20070181943 Lateral power transistor and method for producing same
08/09/2007US20070181942 Semiconductor circuit arrangement
08/09/2007US20070181941 High voltage semiconductor devices and methods for fabricating the same
08/09/2007US20070181940 Trench field effect transistor and method of making it
08/09/2007US20070181939 Trench-gate semiconductor devices and the manufacture thereof
08/09/2007US20070181938 Field-effect transistors with weakly coupled layered inorganic semiconductors
08/09/2007US20070181937 P-channel non-volatile memory and operating method thereof
08/09/2007US20070181936 Novel architecture to monitor isolation integrity between floating gate and source line
08/09/2007US20070181935 Method of fabricating flash memory device and flash memory device fabricated thereby
08/09/2007US20070181934 Interdigitated conductive lead frame or laminate lead frame for GaN die
08/09/2007US20070181933 Non-volatile memory electronic device
08/09/2007US20070181932 Thermal isolation of phase change memory cells
08/09/2007US20070181931 Hafnium tantalum oxide dielectrics
08/09/2007US20070181929 Semiconductor Constructions, Memory Cells, DRAM Arrays, Electronic Systems; Methods of Forming Semiconductor Constructions; and Methods of Forming DRAM Arrays
08/09/2007US20070181928 Capacitor and manufacturing method thereof
08/09/2007US20070181927 Charge balance insulated gate bipolar transistor
08/09/2007US20070181926 Semiconductor devices and methods of fabricating the same
08/09/2007US20070181925 Semiconductor device having a vertical channel and method of manufacturing same
08/09/2007US20070181924 Integrated capacitor structure
08/09/2007US20070181920 Manufacturing method for a semiconductor substrate comprising at least a buried cavity and devices formed with this method
08/09/2007US20070181919 Novel Isolated LDMOS IC Technology
08/09/2007US20070181918 Semiconductor device
08/09/2007US20070181917 Split dual gate field effect transistor
08/09/2007US20070181916 Method of manufacturing flash memory device
08/09/2007US20070181915 Partial confinement photonic crystal waveguides
08/09/2007US20070181914 Non-volatile memory device and method of fabricating the same
08/09/2007US20070181913 Integrated Circuit Device
08/09/2007US20070181912 Light-emitting element and display device
08/09/2007US20070181911 Transistor
08/09/2007US20070181910 Heterobipolar transistor and method of fabricating the same
08/09/2007US20070181903 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
08/09/2007US20070181900 Semiconductor light emitting device and its manufacture method
08/09/2007US20070181890 Light emitting device
08/09/2007US20070181889 Semiconductor light emitting device and method for manufacturing the same
08/09/2007US20070181887 Display device
08/09/2007US20070181885 Display device and method of manufacturing the same
08/09/2007US20070181884 Integrated circuitry, dynamic random access memory cells, and electronic systems
08/09/2007US20070181883 Semiconductor device having a modified dielectric film
08/09/2007US20070181882 Multi-level semiconductor device and method of fabricating the same
08/09/2007US20070181881 Display device and manufacturing method of the same
08/09/2007US20070181880 Semiconductor device and method for forming the same
08/09/2007US20070181879 Display device and manufacturing method thereof
08/09/2007US20070181878 Transparent electrode and preparation method thereof
08/09/2007US20070181877 Thin film transistor substrate and method of manufacturing the same and mask for manufacturing thin film transistor substrate
08/09/2007US20070181875 Semiconductor device
08/09/2007US20070181873 Organic-inorganic hybrid polymer and organic insulator composition having the same and methods thereof
08/09/2007US20070181872 Organic light emitting display and manufacturing method thereof
08/09/2007US20070181871 Organic thin film transistor using ultra-thin metal oxide as gate dielectric and fabrication method thereof
08/09/2007US20070181868 Silicon electrode plate for plasma etching with superior durability
08/09/2007US20070181685 Automated package dimensioning subsystem
08/09/2007DE10350702B4 Halbleiterbauelement mit einer kapazitiven, gegenüber Fehlern einer Dielektrikusschicht robusten Struktur Semiconductor device with a capacitive, against errors Dielektrikusschicht a robust structure
08/09/2007DE10343681B4 Halbleiterstruktur und deren Verwendung, insbesondere zum Begrenzen von Überspannungen Semiconductor structure and their use, in particular for limiting overvoltages
08/09/2007DE10317628B4 Matrixsubstrat für eine Flüssigkristallanzeigevorrichtung und Verfahren zu dessen Herstellung Matrix substrate for a liquid crystal display device and process for its preparation
08/09/2007DE102007005558A1 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same
08/09/2007DE102007005347A1 Halbleitervorrichtung Semiconductor device
08/09/2007DE102007004616A1 Halbleitervorrichtung mit Super-Junction-Struktur und Verfahren zur Herstellung derselben A semiconductor device having super junction structure and method of manufacturing the same
08/09/2007DE102007003583A1 Transistor, Speicherzelle und Verfahren zum Herstellen eines Transistors Transistor memory cell and method for manufacturing a transistor
08/09/2007DE102007001134A1 Semiconductor component e.g. n-type metal oxide semiconductor, has substrate with active region, and charge producing layer is formed along boundary surface between active region and gate dielectric layer on substrate
08/09/2007DE102006061170A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
08/09/2007DE102006043990A1 Halbleitervorrichtung Semiconductor device
08/09/2007DE102006003932A1 Field effect semiconductor component, has source field heavily doped and emitting minority charge carrier, where transition from source field to body zone has doping material profile of abrupt PN-transition
08/09/2007DE102006001680B3 Herstellungsverfahren für eine FinFET-Transistoranordnung und entsprechende FinFET-Transistoranordnung Preparation process for a FinFET transistor arrangement and corresponding FinFET transistor arrangement
08/09/2007DE10008572B4 Verbindungseinrichtung für Leistungshalbleitermodule Connector for power semiconductor modules
08/08/2007EP1816689A1 Transistor or triode structure with tunnel effect and insulating nanochannel
08/08/2007EP1816682A2 Phase change RAM including resistance element having diode function and methods of fabricating and operating the same
08/08/2007EP1816673A2 Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification
08/08/2007EP1816013A1 Acceleration sensor-mounted tire
08/08/2007EP1815545A2 Alkaline fluoride dope molecular films and applications for p-n junction and field-effect transistor devices
08/08/2007EP1815531A1 Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor
08/08/2007EP1815530A1 Field effect transistor employing an amorphous oxide
08/08/2007EP1815529A2 Semiconductor devices and methods of making
08/08/2007EP1815528A1 Method of forming a transistor having a dual layer dielectric
08/08/2007EP1815527A1 A mosfet for high voltage applications and a method of fabricating same
08/08/2007EP1815526A1 Insulated gate semiconductor device and method for producing the same
08/08/2007EP1815525A1 Method of forming a thin film component
08/08/2007EP1815524A1 Method for dopant calibration of delta doped multilayered structure
08/08/2007EP1815523A2 Semiconductor devices and method of manufacturing them
08/08/2007EP1815520A1 Silicon-on-insulator semiconductor device with silicon layer having defferent crystal orientations and method of forming the silicon-on-insulator semiconductor device
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