| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/30/2007 | US20070201258 Semiconductor memory device capable of controlling drive ability of output driver |
| 08/30/2007 | US20070201255 Chalcogenide glass constant current device, and its method of fabrication and operation |
| 08/30/2007 | US20070200983 Display apparatus and method for manufacturing the same |
| 08/30/2007 | US20070200981 Thin Film Transistor Array Panel and Manufacturing Method Thereof |
| 08/30/2007 | US20070200802 Electronic circuit, electronic device, and electronic apparatus |
| 08/30/2007 | US20070200477 Nanofabrication |
| 08/30/2007 | US20070200255 System for fabricating semiconductor components with through wire interconnects |
| 08/30/2007 | US20070200251 Method of fabricating ultra thin flip-chip package |
| 08/30/2007 | US20070200233 Bond pad structures with reduced coupling noise |
| 08/30/2007 | US20070200222 Semiconductor device and method of fabrication |
| 08/30/2007 | US20070200204 Transmission Line Substrate And Semiconductor Package |
| 08/30/2007 | US20070200202 Phase change memory structure having an electrically formed constriction |
| 08/30/2007 | US20070200200 Semiconductor device and method of manufacturing the same |
| 08/30/2007 | US20070200199 Semiconductor bulk resistance element |
| 08/30/2007 | US20070200198 Transistor or triode structure with tunneling effect and insulating nanochannel |
| 08/30/2007 | US20070200197 MIM capacitor |
| 08/30/2007 | US20070200196 Shallow trench isolation (STI) devices and processes |
| 08/30/2007 | US20070200187 Nanowire device and method of making |
| 08/30/2007 | US20070200186 Semiconductor device |
| 08/30/2007 | US20070200185 Semiconductor device and method for fabricating the same |
| 08/30/2007 | US20070200184 Methods and apparatus for a stepped-drift MOSFET |
| 08/30/2007 | US20070200183 Power semiconductor component with a drift zone and a high-dielectric compensation zone and method for producing a compensation zone |
| 08/30/2007 | US20070200182 Memory array structure with strapping cells |
| 08/30/2007 | US20070200181 Buried conductor for imagers |
| 08/30/2007 | US20070200180 Double density NROM with nitride strips (DDNS) |
| 08/30/2007 | US20070200179 Strain enhanced CMOS architecture with amorphous carbon film and fabrication method of forming the same |
| 08/30/2007 | US20070200178 Gate-all-around type of semiconductor device and method of fabricating the same |
| 08/30/2007 | US20070200171 Seminconductor device and method of manufacturing the same |
| 08/30/2007 | US20070200170 Semiconductor device and method of manufacturing the same |
| 08/30/2007 | US20070200169 Gate electrode of semiconductor device and method for fabricating the same |
| 08/30/2007 | US20070200168 MONOS type nonvolatile memory cell, nonvolatile memory, and manufacturing method thereof |
| 08/30/2007 | US20070200167 Nonvolatile semiconductor storage device and manufacturing method thereof |
| 08/30/2007 | US20070200166 Semiconductor device and manufacturing method of the same |
| 08/30/2007 | US20070200165 Floating gate, a nonvolatile memory device including the floating gate and method of fabricating the same |
| 08/30/2007 | US20070200164 Single poly embedded memory structure and methods for operating the same |
| 08/30/2007 | US20070200163 Non-volatile electrically alterable memory cell for storing multiple data and manufacturing thereof |
| 08/30/2007 | US20070200162 Reducing dielectric constant for MIM capacitor |
| 08/30/2007 | US20070200161 High performance tapered varactor |
| 08/30/2007 | US20070200160 Semiconductor device and method of fabricating the same |
| 08/30/2007 | US20070200159 Capacitor having high electrostatic capacity, integrated circuit device including the capacitor and method of fabricating the same |
| 08/30/2007 | US20070200158 Electrode structure having at least two oxide layers and non-volatile memory device having the same |
| 08/30/2007 | US20070200157 Semiconductor memory device and manufacturing method thereof |
| 08/30/2007 | US20070200156 Single-charge tunnelling device |
| 08/30/2007 | US20070200155 Method of fabricating an integrated electronic circuit with programmable resistance cells |
| 08/30/2007 | US20070200154 Semiconductor memory device and method for manufacturing semiconductor memory device |
| 08/30/2007 | US20070200153 Electronic device |
| 08/30/2007 | US20070200151 Semiconductor device and method of fabricating the same |
| 08/30/2007 | US20070200150 Voltage-controlled semiconductor device |
| 08/30/2007 | US20070200149 Semiconductor device and method of production |
| 08/30/2007 | US20070200148 Element for solid-state imaging device |
| 08/30/2007 | US20070200144 Method for producing partial soi structures comprising zones connecting a superficial layer and a substrate |
| 08/30/2007 | US20070200140 Electrostatic protection device for semiconductor circuit for decreasing input capacitance |
| 08/30/2007 | US20070200139 Semiconductor device, manufacturing method thereof, and display device |
| 08/30/2007 | US20070200138 Semiconductor device having IGBT and diode |
| 08/30/2007 | US20070200136 Isolated zener diodes |
| 08/30/2007 | US20070200127 Power surface mount light emitting die package |
| 08/30/2007 | US20070200126 Method of manufacturing nitride semiconductor light emitting device |
| 08/30/2007 | US20070200122 Light emitting device and method of manufacturing the same |
| 08/30/2007 | US20070200121 Multi-colored LED array with improved color uniformity |
| 08/30/2007 | US20070200117 Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same |
| 08/30/2007 | US20070200114 Compound Semiconductor Device, Production Method Of Compound Semiconductor Device And Diode |
| 08/30/2007 | US20070200113 Semiconductor device and fabrication method thereof |
| 08/30/2007 | US20070200112 Light-emitting device |
| 08/30/2007 | US20070200111 Image display device |
| 08/30/2007 | US20070200110 Methods of Making Semiconductor-Based Electronic Devices on a Wire and Articles that can be Made Thereby |
| 08/30/2007 | US20070200109 Method for the manufacture of a piezoelectric component |
| 08/30/2007 | DE60034451T2 Mehrachsige integrierte sensorschaltung und sensorpackung Multi-axis sensor integrated circuit and sensor package |
| 08/30/2007 | DE19709764B4 Halbleitervorrichtung mit Elektrode aus Aluminium und feinkörnigem Silizium und ihr Herstellungsverfahren A semiconductor device having electrode of aluminum and fine-grained silicon and their method of preparation |
| 08/30/2007 | DE10240861B4 Mittels Feldeffekt steuerbares Halbleiterbauelement und Verfahren zu dessen Herstellung By means of field-effect-controllable semiconductor component and process for its preparation |
| 08/30/2007 | DE10228519B4 Flüssigkristalldisplay-Vorrichtung A liquid crystal display device |
| 08/30/2007 | DE102006045581A1 Halbleiterbauelement mit einem Trench-Gate und Verfahren zu seiner Fertigung A semiconductor device with a trench gate and process for its manufacturing |
| 08/30/2007 | DE102006008929A1 Layer structure production for nitride semiconductor component on silicon surface, involves preparation of substrate having silicon surface on which nitride nucleation layer is deposited with masking layer |
| 08/30/2007 | DE102006007096A1 Metal oxide semiconductor field effect transistor, comprises drift zone having sub zone arranged between another sub zone and body zone, and drift zone is doped more strongly than sub zone |
| 08/30/2007 | DE102006005033A1 Semiconductor device arrangement, has temperature measuring arrangement with temperature measuring resistor which is formed over part of semiconductor zone, where evaluation circuit is coupled to temperature measuring resistor |
| 08/30/2007 | DE102006004405A1 Power semiconductor component, e.g. power metal oxide semiconductor field effect transistor, has compensation zone including high dielectric material with temperature dependent dielectric constant, where constant varies in direction |
| 08/30/2007 | DE102005051332B4 Halbleitersubstrat, Halbleiterchip, Halbleiterbauteil und Verfahren zur Herstellung eines Halbleiterbauteils Semiconductor substrate, the semiconductor chip, semiconductor device and method of manufacturing a semiconductor device |
| 08/29/2007 | EP1826824A2 Semiconductor device and method of manufacturing the same |
| 08/29/2007 | EP1826823A2 Nitride based transistors for millimeter wave operation |
| 08/29/2007 | EP1826822A1 Quantum dot array and production method therefor, and dot array element and production method thererfor |
| 08/29/2007 | EP1826815A2 Semiconductor device and method of manufacturing the same |
| 08/29/2007 | EP1825522A2 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors |
| 08/29/2007 | EP1825521A2 Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide |
| 08/29/2007 | EP1825520A1 Semiconductor device and method for production thereof |
| 08/29/2007 | EP1825519A1 Device using abrupt metal-insulator transition layer and method of fabricating the device |
| 08/29/2007 | EP1825518A1 Power semiconductor |
| 08/29/2007 | EP1825517A2 Transistors having buried n-type and p-type regions beneath the source region and methods of fabricating the same |
| 08/29/2007 | EP1825505A2 Methodology for recovery of hot carrier induced degradation in bipolar devices |
| 08/29/2007 | EP1825504A1 Vertical bipolar transistor |
| 08/29/2007 | EP1825501A2 Strained nmos transistor featuring deep carbon doped regions and raised donor doped source and drain |
| 08/29/2007 | EP1522078B1 Erasable and programmable non-volatile cell |
| 08/29/2007 | EP1474832A4 Method and system for molecular charge storage field effect transistor |
| 08/29/2007 | EP1407476A4 Power mos device with asymmetrical channel structure |
| 08/29/2007 | EP1368837B1 Semiconductor devices having field shaping regions |
| 08/29/2007 | EP1364410B1 Semiconductor devices and their peripheral termination |
| 08/29/2007 | EP1157425B1 Igbt with pn insulation |
| 08/29/2007 | CN200941387Y High voltage N-shaped metal oxide transistor |
| 08/29/2007 | CN101027780A III-V HEMT devices |
| 08/29/2007 | CN101027779A Poly-silicon-germanium gate stack and method for forming the same |
| 08/29/2007 | CN101027778A 场效应晶体管 FET |
| 08/29/2007 | CN101027777A Vertical structure semiconductor devices with improved light output |