Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2007
07/19/2007US20070164419 Device package and methods for the fabrication and testing thereof
07/19/2007US20070164413 Semiconductor device
07/19/2007US20070164397 Process for forming a buried plate
07/19/2007US20070164396 Multi-functional composite substrate structure
07/19/2007US20070164395 Chip package with built-in capacitor structure
07/19/2007US20070164394 Semiconductor device
07/19/2007US20070164393 Photodetector comprising a monolithically integrated transimpedance amplifier and evaluation electronics, and production method
07/19/2007US20070164392 Semiconductor device
07/19/2007US20070164391 Trench isolation type semiconductor device and related method of manufacture
07/19/2007US20070164390 Silicon nitride passivation layers having oxidized interface
07/19/2007US20070164384 Solid-state imaging device and method for manufacturing the same
07/19/2007US20070164383 Magnetic random access memory with improved writing margin
07/19/2007US20070164379 Isolation scheme for reducing film stress in a MEMS device
07/19/2007US20070164378 Integrated mems package
07/19/2007US20070164377 Semiconductor sensor using surface plasmons to increase energy absorption efficiency
07/19/2007US20070164376 Method for edge sealing barrier films
07/19/2007US20070164375 Semiconductor device and manufacturing method thereof
07/19/2007US20070164374 Molecular memory devices including solid-state dielectric layers and related methods
07/19/2007US20070164373 MOS transistor with elevated source and drain structures and method of fabrication thereof
07/19/2007US20070164372 Systems and methods for forming additional metal routing in semiconductor devices
07/19/2007US20070164371 Reliability degradation compensation using body bias
07/19/2007US20070164370 Semiconductor device and fabricating method thereof
07/19/2007US20070164369 Cobalt silicidation process for substrates comprised with a silicon-germanium layer
07/19/2007US20070164368 Sram device having a common contact
07/19/2007US20070164367 CMOS gates with solid-solution alloy tunable work functions
07/19/2007US20070164366 Mitigation of gate oxide thinning in dual gate CMOS process technology
07/19/2007US20070164365 Single stress liner for migration stability and speed
07/19/2007US20070164364 Semiconductor device using sige for substrate and method for fabricating the same
07/19/2007US20070164361 Micro-mechanically strained semiconductor film
07/19/2007US20070164358 Structure and method to form semiconductor-on-pores (SOP) for high device performance and low manufacturing cost
07/19/2007US20070164355 Semiconductor device of high breakdown voltage and manufacturing method thereof
07/19/2007US20070164354 MOS transistor with elevated source and drain structures and method of fabrication thereof
07/19/2007US20070164353 Semiconductor device and method for manufacturing the same
07/19/2007US20070164352 Multi-bit-per-cell nvm structures and architecture
07/19/2007US20070164351 Semiconductor device and method for manufacturing the same
07/19/2007US20070164350 Method and structure for a self-aligned silicided word line and polysilicon plug during the formation of a semiconductor device
07/19/2007US20070164349 Circuit board, circuit apparatus, and method of manufacturing the circuit board
07/19/2007US20070164348 Contactless uniform-tunneling separate p-well (cusp)non-volatile memory array architecture, fabrication and operation
07/19/2007US20070164347 Non-volatile memory devices suitable for lcd driver applications
07/19/2007US20070164346 Semiconductor device
07/19/2007US20070164345 Semiconductor device and method of manufacturing the same
07/19/2007US20070164344 Nonvolatile semiconductor device and method of fabricating the same
07/19/2007US20070164343 Nonvolatile semiconductor memory device having element isolating region of trench type
07/19/2007US20070164342 Semiconductor memory device and method of manufacturing the same
07/19/2007US20070164341 Nonvolatile Semiconductor Memory Device Comprising Shield Electrode On Source and Method For Manufacturing the Same
07/19/2007US20070164340 Semiconductor memory device
07/19/2007US20070164338 Method of forming nano-sized MTJ cell without contact hole
07/19/2007US20070164337 Flip feram cell and method to form same
07/19/2007US20070164336 Spin fet and spin memory
07/19/2007US20070164331 Thin film transistor substrate for display device and fabricating method thereof
07/19/2007US20070164328 Method of manufacturing semiconductor device and the semiconductor device manufactured by the method
07/19/2007US20070164327 Protection element and fabrication method for the same
07/19/2007US20070164326 Field effect transistor
07/19/2007US20070164325 Three-dimensional multi-gate device and fabricating method thereof
07/19/2007US20070164324 Electronic access control device
07/19/2007US20070164323 CMOS gates with intermetallic compound tunable work functions
07/19/2007US20070164322 Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices
07/19/2007US20070164321 Methods of fabricating transistors including supported gate electrodes and related devices
07/19/2007US20070164320 Tunable semiconductor component provided with a current barrier
07/19/2007US20070164319 Silicon pillars for vertical transistors
07/19/2007US20070164316 Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same
07/19/2007US20070164315 Cap Layers Including Aluminum Nitride for Nitride-Based Transistors and Methods of Fabricating Same
07/19/2007US20070164314 Nitrogen polar III-nitride heterojunction JFET
07/19/2007US20070164312 Electronic devices formed of high-purity molybdenum oxide
07/19/2007US20070164311 Ingaas/gaas lasers on-silicon produced by-lepecvd and mocvd
07/19/2007US20070164310 Electrostatic discharge element and diode having horizontal current paths, and method of manufacturing the same
07/19/2007US20070164309 Method of making a diode read/write memory cell in a programmed state
07/19/2007US20070164307 Light emitting diode
07/19/2007US20070164297 Optical-element integrated semiconductor integrated circuit and fabrication method thereof
07/19/2007US20070164295 Light emitting device and electronic apparatus
07/19/2007US20070164290 Semiconductor device and method of fabricating the same
07/19/2007US20070164289 Thin film transistor substrate and fabricating method thereof
07/19/2007US20070164288 Liquid crystal display panel and manufacturing method of the same
07/19/2007US20070164287 Thin film transistor, its manufacture method and display device
07/19/2007US20070164286 Liquid crystal display, thin film transistor array panel therefor, and manufacturing method thereof
07/19/2007US20070164285 Electron injection composition for light emitting element, light emitting element, and light emitting device
07/19/2007US20070164284 Thin film transistor array substrate and method for manufacturing the same
07/19/2007US20070164283 Electro-optical apparatus, method for manufacturing electro-optical apparatus, and electronic device
07/19/2007US20070164282 Electrooptic device, method for manufacturing the same, and conductive-layer connection structure
07/19/2007US20070164281 Input display
07/19/2007US20070164280 Thin film transistor, manufacturing method for thin film transistor and manufacturing method for display device
07/19/2007US20070164278 Organic light emitting device and flat display including the same
07/19/2007US20070164277 Organic light emitting display
07/19/2007US20070164275 Light-emitting device, method for manufacturing light-emitting device, and electronic apparatus
07/19/2007US20070164274 Brightness enforcement diffussion construction
07/19/2007US20070164272 Three-terminal electrical bistable devices
07/19/2007US20070164271 Resonant nanostructures and methods of use
07/19/2007US20070164270 producing a liquid crystalline polymer with high optical quality switchable holograms with good diffraction efficiency and low, stable switching voltage; inverse mode switchable grating system; haze-free
07/19/2007US20070164269 METHOD FOR FORMING UNDERLAYER COMPOSED OF GaN-BASED COMPOUND SEMICONDUCTOR, GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT
07/19/2007US20070164268 Method and apparatus for providing a light source that combines different color leds
07/19/2007US20070164267 Electrically rewritable non-volatile memory element and method of manufacturing the same
07/19/2007US20070164265 Semiconductor memory device
07/19/2007US20070163874 Electron-Jump Chemical Energy Converter
07/19/2007DE10360990B4 Kompakte Pixel-Rücksetzschaltungen unter Verwendung einer Umkehrstromauslese Compact pixel reset circuits using a reverse current selection
07/19/2007DE10355666B4 Dünnschichttransistor-Matrixsubstrat sowie Verfahren zu dessen Herstellung Thin film transistor array substrate as well as method for its preparation
07/19/2007DE10262103B4 Doping process used in the production of a transistor, IGBT, thyristor or diode comprises preparing a semiconductor body, producing crystal defects in the body, introducing hydrogen ions into the body, and heat treating
07/19/2007DE10228517B4 Schutzschaltung und -verfahren gegen elektrostatische Entladung in einem TFT-LCD Protection circuit and method against electrostatic discharge in a TFT-LCD
07/19/2007DE102007001643A1 Semiconductor device, e.g. ditch-metal oxide semiconductor field effect transistor, has insulator with normal strength value during insulation breakdown, where normal value is equal to or more than strength value during insulation breakdown
07/19/2007DE102006002065A1 Compensation unit e.g. field effect transistor, has compensation field extended parallel to connection direction between electrodes, where field has tapered cross sectional surface in direction of drain electrode
07/19/2007DE102005063131A1 Verfahren zum Reduzieren von Leckströmen, die durch eine Fehljustierung einer Kontaktstruktur hervorgerufen werden, durch Erhöhen einer Fehlertoleranz des Kontaktstrukturierungsprozesses A method for reducing leakage currents, which are caused by a misalignment of a contact structure, by increasing an error tolerance of the contact patterning process