Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2007
08/16/2007US20070187678 Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
08/16/2007US20070187677 Dual panel-type organic electroluminescent device and method for fabricating the same
08/16/2007US20070187676 Organic electro-luminescent display and method of fabricating the same
08/16/2007US20070187674 Organic thin film transistor
08/16/2007US20070187671 Organic electronic component with high resolution structuring, and method of the production thereof
08/16/2007US20070187670 Opto-thermal annealing mask and method
08/16/2007US20070187669 Field effect transistor and a method for manufacturing the same
08/16/2007US20070187668 Crystal substrates and methods of fabricating the same
08/16/2007US20070187667 Electronic device including a selectively polable superlattice
08/16/2007US20070187666 Gallium nitride-based compound semiconductor light-emitting device
08/16/2007US20070187665 Light-emitting transistor
08/16/2007US20070186664 Strain gauge
08/16/2007DE202004021352U1 Leistungshalbleitervorrichtungen Power semiconductor devices
08/16/2007DE19721322B4 Elektrostatische Entladungsschutzeinrichtung Electrostatic discharge protection device
08/16/2007DE10350354B4 Orientierungs-unabhängige Oxidation von nitriertem Silizium Orientation independent oxidation of nitrided silicon
08/16/2007DE10349908B4 Zweifach passiviertes Leistungshalbleiterbauelement mit einer MESA Randstruktur und Verfahren zu dessen Herstellung Dual passivated power semiconductor device having a mesa edge structure and process for its preparation
08/16/2007DE10245550B4 Kompensationsbauelement und Verfahren zu dessen Herstellung Compensation component and method for its production
08/16/2007DE102006061172A1 Metall-Oxid-Halbleiter-Transistor mit geringer Breite Metal-oxide-semiconductor transistor having a small width
08/16/2007DE102005060033B3 Semi conductor component e.g. tunnel diode has n-doped semiconductor layer and p-doped semiconductor layer and pseudomorphic semiconductor layer with adjacent n-doped layer area is formed at n-doped semiconductor layer
08/16/2007DE102005002023B4 Halbleiterstruktur mit vertikalem JFET Semiconductor structure with a vertical JFET
08/16/2007DE10164305B4 Verfahren zum Ausbilden eines integrierten Halbleiterelements A method of forming an integrated semiconductor element
08/15/2007EP1818989A2 Nonvolatile semiconductor storage device and manufacturing method thereof
08/15/2007EP1818978A1 Semiconductor storage device and manufacturing method thereof
08/15/2007EP1818974A2 Non-volatile memory cells and methods for fabricating the same
08/15/2007EP1818973A1 Formation of a monocrystalline semiconductor layer portion separated from a substrate
08/15/2007EP1817799A1 Semiconductor device and rectifier arrangement
08/15/2007EP1817798A2 Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same
08/15/2007EP1817797A2 Low turn-on voltage, non-electron blocking double hbt structure
08/15/2007EP1466363A4 Semiconductor device with co-packaged die
08/15/2007EP1441392B1 Magnetic memory device
08/15/2007EP1142012A4 Method of fabricating a high power rf field effect transistor with reduced hot electron injection and resulting structure
08/15/2007EP1053567B1 Lateral thin-film silicon-on-insulator (soi) jfet device
08/15/2007CN1332453C Plasma oscillation switching device
08/15/2007CN1332452C Semiconductor device
08/15/2007CN1332451C Semiconductor device and producing method thereof
08/15/2007CN1332450C Field-effect transistor constituting channel by carbon nano tubes
08/15/2007CN1332449C Field effect transistor and manufacture method thereof
08/15/2007CN1332447C Semiconductor device and producing method thereof
08/15/2007CN1332442C Semiconductor device with a pair of radiating fan
08/15/2007CN1332438C Method of forming ferroelectric memory cell
08/15/2007CN1332437C Novel field effect transistor and method of fabrication
08/15/2007CN1332432C Method and device for determining backgate characteristics
08/15/2007CN1332428C Method for forming finfet field effect transistor
08/15/2007CN1332426C Production method for thin-film semiconductor
08/15/2007CN1332424C Method of fabricating a polysilicon capacitor utilizing FET and bipolar base polysilicon layers
08/15/2007CN1332418C Method for manufacturing semiconductor device
08/15/2007CN1332258C Electric lighting device, manufacturing method thereof and electronic equipment
08/15/2007CN1332257C Driving method of luquid crystal display device
08/15/2007CN1332253C Semi-penetrating and semi-reflecting liquid-crystal displaying panel, pixel structure and manufacture thereof
08/15/2007CN1332250C Electro-optical device and projection apparatus
08/15/2007CN1332248C In-plane switching liquid crystal display device
08/15/2007CN1332246C Display panel
08/15/2007CN1332245C Wiring substrate for display device and its mfg. method
08/15/2007CN1332236C Laser irradiation stage, laser irradiation apparatus and method of manufacturing a semiconductor device
08/15/2007CN101019238A Semiconductor assembly for limiting voltage
08/15/2007CN101019237A Wireless chip and method of manufacturing the same
08/15/2007CN101019236A Metal source power transistor and method of manufacture
08/15/2007CN101019235A Vertical semiconductor devices and methods of manufacturing such devices
08/15/2007CN101019234A HEMT piezoelectric structures with zero alloy disorder
08/15/2007CN101019226A Preparation of front contact for surface mounting
08/15/2007CN101019216A Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
08/15/2007CN101019215A Floating gate structures with vertical projections
08/15/2007CN101018792A Organic silane compound and method for producing the same and organic thin film by using the same
08/15/2007CN101017864A Silicon base covariant underlay with the ultrathin carbon silicon middle layer and its preparing method
08/15/2007CN101017854A GaN base transistor with high electronic transfer rate
08/15/2007CN101017853A Non-volatile memory element having double trap layers
08/15/2007CN101017852A Nonvolatile semiconductor storage device and manufacturing method thereof
08/15/2007CN101017851A Semiconductor device and method of manufacturing the same
08/15/2007CN101017850A VDMOS and IGBT power unit using the PSG doping technology and its making process
08/15/2007CN101017849A A compound bar, bar source self-separating VDMOS, 1GBT power unit and its making technology
08/15/2007CN101017848A Separated dual bar field effect transistor
08/15/2007CN101017847A Semiconductor devices and methods for fabricating the same
08/15/2007CN101017846A Semiconductor device and its manufacturing method
08/15/2007CN101017826A Dynamic random access memory structure and its making method
08/15/2007CN101017823A Vertical self-align suspending drain MOS audion and its making method
08/15/2007CN101017820A Semiconductor device having gate-all-around structure and method of fabricating the same
08/15/2007CN101017784A Method for making nano carbon tube field effect transistor
08/15/2007CN101017782A Thin film transistor and organic electro-luminescent display unit and its making method
08/15/2007CN101017643A Light emitting device and method of driving the same
08/14/2007US7257015 Semiconductor memory device having a floating storage bulk region
08/14/2007US7256853 Liquid crystal display device having particular pixel region
08/14/2007US7256843 Active matrix type liquid crystal display and liquid crystal material
08/14/2007US7256760 Semiconductor device
08/14/2007US7256668 Phase change control devices and circuits for guiding electromagnetic waves employing phase change control devices
08/14/2007US7256534 Flat panel display with black matrix
08/14/2007US7256500 Semiconductor device using metal nitride as insulating film
08/14/2007US7256499 Ultra low dielectric constant integrated circuit system
08/14/2007US7256498 Resistance-reduced semiconductor device and methods for fabricating the same
08/14/2007US7256497 Semiconductor device with a barrier layer and a metal layer
08/14/2007US7256490 Test carrier for semiconductor components having conductors defined by grooves
08/14/2007US7256486 Packaging device for semiconductor die, semiconductor device incorporating same and method of making same
08/14/2007US7256478 Notched compound semiconductor wafer
08/14/2007US7256477 Notched compound semiconductor wafer
08/14/2007US7256476 Notched compound semiconductor wafer
08/14/2007US7256472 Bipolar transistor
08/14/2007US7256471 Antifuse element and electrically redundant antifuse array for controlled rupture location
08/14/2007US7256467 Materials and methods for forming hybrid organic-inorganic anti-stiction materials for micro-electromechanical systems
08/14/2007US7256466 Nanosensors
08/14/2007US7256465 Ultra-shallow metal oxide surface channel MOS transistor
08/14/2007US7256464 Metal oxide semiconductor transistor and fabrication method thereof
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