Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2007
09/06/2007US20070205459 Nonvolatile memory devices and methods of forming the same
09/06/2007US20070205458 Non-Volatile Semiconductor Memory and Manufacturing Process Thereof
09/06/2007US20070205457 Semiconductor memory device with bit line of small resistance and manufacturing method thereof
09/06/2007US20070205456 Nonvolatile memory device and nonvolatile memory array including the same
09/06/2007US20070205455 Flash memory cells having trenched storage elements
09/06/2007US20070205453 Semiconductor device and method for manufacturing the same
09/06/2007US20070205452 Method for forming a metal oxide film
09/06/2007US20070205451 Semiconductor integrated circuit and method of designing semiconductor integrated circuit
09/06/2007US20070205450 Semiconductor device and method of manufacturing the same
09/06/2007US20070205449 Memory device which comprises a multi-layer capacitor
09/06/2007US20070205448 Ferroelectric tunneling element and memory applications which utilize the tunneling element
09/06/2007US20070205446 Reducing nitrogen concentration with in-situ steam generation
09/06/2007US20070205445 Semiconductor device having a field effect source/drain region
09/06/2007US20070205444 Architecture of a n-type metal-oxide-semiconductor transistor with a compressive strained silicon-germanium channel fabricated on a silicon (110) substrate
09/06/2007US20070205443 Vertical gated access transistor
09/06/2007US20070205442 Semiconductor Device
09/06/2007US20070205441 Manufacturing method of semiconductor device suppressing short-channel effect
09/06/2007US20070205440 Semiconductor device and method for producing the same
09/06/2007US20070205438 Masking process for simultaneously patterning separate regions
09/06/2007US20070205437 Method for the production of a semiconductor substrate comprising a plurality of gate stacks on a semiconductor substrate, and corresponding semiconductor structure
09/06/2007US20070205436 Flash memory cell with split gate structure and method for forming the same
09/06/2007US20070205435 Versatile system for optimizing current gain in bipolar transistor structures
09/06/2007US20070205434 Methodology for recovery of hot carrier induced degradation in bipolar devices
09/06/2007US20070205433 Insulating gate AlGaN/GaN HEMTs
09/06/2007US20070205432 Heterojunction bipolar transistor and power amplifier using same
09/06/2007US20070205431 Bi-directional transistor with by-pass path and method therefor
09/06/2007US20070205424 Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device
09/06/2007US20070205421 Semiconductor optical devices and method for forming
09/06/2007US20070205415 Semiconductor device and manufacturing method thereof
09/06/2007US20070205413 Semiconductor device and manufacturing method thereof
09/06/2007US20070205410 Light-emitting element, light-emitting device, and electronic device
09/06/2007US20070205407 Nitride semiconductor device and method for fabricating the same
09/06/2007US20070205398 Structures and Methods for Increasing the Speed of Electroactive Polymers
09/06/2007US20070204959 Substrate processing method and material for electronic device
09/06/2007DE19648729B4 Matrix-Anordnung einer Flüssigkristallanzeige mit aktiver Matrix und Herstellverfahren dafür Matrix arrangement of a liquid crystal active matrix display and manufacturing methods for
09/06/2007DE112005002418T5 Leistungstransistoren mit MOS-Gate und konstruierter Bandlücke MOS-gated power transistors and constructed bandgap
09/06/2007DE112005001621T5 Isolierschicht-Bipolartransistor Insulated Gate Bipolar Transistor
09/06/2007DE112005000704T5 Nicht-planarer Bulk-Transistor mit verspanntem Kanal mit erhöhter Mobilität und Verfahren zur Herstellung Non-planar bulk transistor having strained channel with increased mobility and process for preparing
09/06/2007DE112004000872T5 Anordnung und Verfahren zum Ausbilden eines Trench-MOSFETs mit Selbstausrichtungsmerkmalen Arrangement and method for forming a trench MOSFET having self-aligning features
09/06/2007DE10205345B4 Halbleiterbauelement Semiconductor device
09/06/2007DE102007008568A1 Halbleitervorrichtung mit IGBT und Diode A semiconductor device with IGBT and diode
09/06/2007DE102007005332A1 Semiconductor component e.g. metal oxide semiconductor field-effect transistor, manufacturing method, involves implementing annealing process in impurity implanted area in order to form impurity doped area
09/06/2007DE102006009942A1 Semiconductor component e.g. power transistor, has drift zone, and drift control zone made of semiconductor material and arranged adjacent to drift zone in body, where accumulation dielectric is arranged between zones
09/06/2007DE102006009721A1 Semiconductor memory device production, involves forming nano-wire, arranging capacitor dielectric partially on capacitor electrode and arranging another capacitor electrode partially on capacitor dielectric
09/06/2007DE102004024885B4 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
09/06/2007DE10126309B4 Rückwärtssperrendes Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung Reverse-locking power semiconductor device and process for its preparation
09/06/2007DE10120030B4 Lateralhalbleiterbauelement Lateralhalbleiterbauelement
09/05/2007EP1830410A1 Single-charge tunnelling device
09/05/2007EP1829114A2 Reduced channel pitch in semiconductor device
09/05/2007EP1829113A2 Normally-off integrated jfet power switches in wide bandgap semiconductors and methods of making
09/05/2007EP1829112A2 Joining of dissimilar materials
09/05/2007EP1829111A2 Iii-nitride material structures including silicon substrates
09/05/2007EP1502306A4 Method of fabricating probe for spm having fet channel structure utilizing self-aligned fabrication
09/05/2007EP1373278A4 Metalloamide and aminosilane precursors for cvd formation of dielectric thin films
09/05/2007CN101032032A Nonplanar device with thinned lower body portion and method of fabrication
09/05/2007CN101032031A 场效应晶体管 FET
09/05/2007CN101032030A 半导体装置 Semiconductor device
09/05/2007CN101032029A Semiconductor assembly comprising a tunnel contact and method for producing said assembly
09/05/2007CN101032028A Reliable contacts
09/05/2007CN101032027A Thin film transistor and its manufacturing method
09/05/2007CN101032020A Semiconductor storage device and method for manufacturing the same
09/05/2007CN101032017A Dual gate cmos fabrication
09/05/2007CN101032011A 等离子体增强氮化物层 Plasma-enhanced nitride layer
09/05/2007CN101031999A Reduction of source and drain parasitic capacitance in cmos devices
09/05/2007CN101030604A Semiconductor structure and method of production
09/05/2007CN101030603A Thin-film transistor and thin-film transistor array base plate
09/05/2007CN101030602A MOS transistor for decreasing short channel and its production
09/05/2007CN101030601A High-voltage MOSFET device
09/05/2007CN101030600A Memory device comprising nanocrystals and method for producing the same
09/05/2007CN101030599A Semiconductor device and method for manufacturing the same
09/05/2007CN101030598A Semiconductor device and method for fabricating the same
09/05/2007CN101030597A Semiconductor device and method of production
09/05/2007CN101030596A Heterogeneous p-n nano-line array, its production and use
09/05/2007CN101030557A Semiconductor device and process for producing the same
09/05/2007CN101030553A Integrated circuit and fabrication method thereof
09/05/2007CN101030541A Semiconductor transistor element and its production
09/05/2007CN100336303C Semiconductor apparatus
09/05/2007CN100336231C High withstand voltage semiconductor device
09/05/2007CN100336230C Multi finger-like transistor
09/05/2007CN100336229C Insulated gate bipolar transistor and its production method and current transformation circuit
09/05/2007CN100336228C 半导体器件 Semiconductor devices
09/05/2007CN100336227C Method for producing metallic bit lines for memory cell arrays, method for producing memory cell arrays and memory cell array
09/05/2007CN100336224C Semiconductor integrated circuit device and electronic device using them
09/05/2007CN100336223C 半导体装置 Semiconductor device
09/05/2007CN100336216C Thin thermally enhanced flip chip in a leaded molded package and package method thereof
09/05/2007CN100336201C Method for manufacturing memory with nanometer point
09/05/2007CN100336195C Semiconductor device and method for providing low substrate capacitor area
09/05/2007CN100336189C Thin film transistor and producing method thereof
09/05/2007CN100336186C Method for forming nickel silicide and semiconductor device
09/05/2007CN100336175C Method of forming nanocrystals
09/05/2007CN100336168C Method of fabricating thin film transistor array substrate
09/05/2007CN100336148C Method for enlarging stoke of piezoelectric sensor and MENS switch using said method
09/05/2007CN100336096C Data driving device and method for liquid crystal display
09/05/2007CN100336095C Active matrix display device
09/05/2007CN100335961C Thin film transistor substrate of a horizontal electric field type and method of darkening defective pixel in the same
09/05/2007CN100335960C Thin film transistor array substrate and fabricating method thereof
09/05/2007CN100335959C Thin film transistor array substrate, method of fabricating the same, liquid crystal display panel having the same and fabricating method thereof
09/05/2007CN100335957C In-plane switching mode liquid crystal display device and method for fabricating the same
09/05/2007CN100335956C 图像显示装置 The image display apparatus
09/05/2007CN100335955C Transmission reflective liquid crystal display board