Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2007
08/08/2007EP1815515A2 Semiconductor device package with bump overlying a polymer layer
08/08/2007EP1815510A1 Etching technique for creation of thermally-isolated microstructures
08/08/2007EP1593150B1 Tri-gate and gate around mosfet devices and methods for making same
08/08/2007EP1207378B1 Semiconductor pressure sensor and pressure sensing device
08/08/2007CN1331241C Thin film electrocystal and picture element structure having same
08/08/2007CN1331240C High speed ge channel heterostructures for field effect devices
08/08/2007CN1331239C Semi-conductor diode with reduced leakage
08/08/2007CN1331238C Semiconductor device and method for fabricating the same
08/08/2007CN1331233C Semiconductor device, dynamic semiconductor storage device and producing method for semiconductor device
08/08/2007CN1331230C Complementary bipolar transistor and its manufacturing method
08/08/2007CN1331226C High voltage assembly structure with high static discharge protective tolerance capacity
08/08/2007CN1331213C Method for producing a transistor structure
08/08/2007CN1331211C Semiconductor element manufacturing method by detecting nitride content of gage silicon oxide layer
08/08/2007CN1331209C Semiconductor device channel termination
08/08/2007CN1331200C Semiconductor device and its conductive structure forming process
08/08/2007CN1331199C UV prtreatment process for ultra-thin oxynitride for formation of silicon nitridefilms
08/08/2007CN1331197C Method for making semiconductor device
08/08/2007CN1331193C Method and its structure for forming semiconductor device
08/08/2007CN1331191C Pattern formation method and pattern formation apparatus, method for manufacturing device, electro-optical device,
08/08/2007CN1331189C Semiconductor device and mfg. method thereof
08/08/2007CN1331154C Method and structure for maximizing SN ratio of electric resistance array
08/08/2007CN1331000C Film transistor liquid crystal display and driving method thereof
08/08/2007CN1330995C Photonic crystals and devices having tunability and switchability
08/08/2007CN1330797C A method to increase device-to-device uniformity for polycrystalline thin-film transistors by deliberately mis-aligning the microstructure relative to the channel region
08/08/2007CN1330557C Method of packaging MEMS device in vacuum state and MEMS device vacuum-packaged using the same
08/08/2007CN101015067A Semiconductor device and method of manufacturing the same
08/08/2007CN101015066A Hot electron transistor
08/08/2007CN101015065A Semiconductor device and method for manufacturing same
08/08/2007CN101015063A Semiconductor radiation detector with a modified internal gate structure
08/08/2007CN101015061A Manufacturing method of thin film integrated circuit
08/08/2007CN101015058A Mos varactor using isolation well
08/08/2007CN101014847A Shear test device
08/08/2007CN101013727A Schottky diode structure with enhanced breakdown voltage and method of manufacture
08/08/2007CN101013726A New material of carbon/silicon heterojunction with gas pressure sensitive effect and application thereof
08/08/2007CN101013725A Bigrid transistor and pixel structure using the same
08/08/2007CN101013724A Semiconductor device having super junction structure and method for manufacturing the same
08/08/2007CN101013723A Semiconductor device having a plurality of metal layers deposited thereon
08/08/2007CN101013722A Semiconductor device and manufacturing method thereof
08/08/2007CN101013721A 半导体装置 Semiconductor device
08/08/2007CN101013706A Bigrid layout structure for thin film transistor
08/08/2007CN101013703A Array structure for assisted-charge memory devices
08/08/2007CN101013698A Transistor, memory cell and method of manufacturing a transistor
08/08/2007CN101013673A High-voltage silicon-on-insulator transistors and methods of manufacturing the same
08/08/2007CN101013670A Method for producing film transistor and lower substrate for LCD
08/08/2007CN101013640A Microswitching device and method of manufacturing the same
08/08/2007CN101013141A Acceleration sensor and method of manufacturing acceleration sensor
08/07/2007US7254050 Method of making adaptive negative differential resistance device
08/07/2007US7253872 Liquid crystal display apparatus comprising wall portions formed in a plurality of openings or cut-out portions of an electrode
08/07/2007US7253870 Liquid crystal display having a bimetal layer allowing the first substrate to selectively make contact with the ITO layer
08/07/2007US7253864 Active matrix display device with active element including a semiconductor film formed of an aggregate of single crystals each extending in the same direction
08/07/2007US7253849 Multi-domain liquid crystal display and a thin film transistor substrate of the same
08/07/2007US7253848 Organic thin film transistor array substrate and liquid crystal display including the same
08/07/2007US7253531 Semiconductor bonding pad structure
08/07/2007US7253530 Method for producing chip stacks
08/07/2007US7253529 Multi-chip package structure
08/07/2007US7253528 Trace design to minimize electromigration damage to solder bumps
08/07/2007US7253525 Semiconductor device including contact holes between adjacent conductor patterns and method for fabricating the same
08/07/2007US7253524 Copper interconnects
08/07/2007US7253522 Integrated capacitor for RF applications with Ta adhesion layer
08/07/2007US7253520 CSP semiconductor device having signal and radiation bump groups
08/07/2007US7253510 Ball grid array package construction with raised solder ball pads
08/07/2007US7253507 Semiconductor device
08/07/2007US7253501 High performance metallization cap layer
08/07/2007US7253500 Semiconductor wafer and a method for manufacturing a semiconductor wafer
08/07/2007US7253499 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer
08/07/2007US7253497 Integrated circuit with inductor having horizontal magnetic flux lines
08/07/2007US7253496 Antifuse circuit with current regulator for controlling programming current
08/07/2007US7253495 Integrated circuit package with air gap
08/07/2007US7253494 Battery mounted integrated circuit device having diffusion layers that prevent cations serving to charge and discharge battery from diffusing into the integrated circuit region
08/07/2007US7253493 High density access transistor having increased channel width and methods of fabricating such devices
08/07/2007US7253492 Semiconductor structure with via structure
08/07/2007US7253490 Magnetic sensor having vertical hall device and method for manufacturing the same
08/07/2007US7253489 Magnetic field sensing device and a fabricating method of the same
08/07/2007US7253487 Integrated circuit chip having a seal ring, a ground ring and a guard ring
08/07/2007US7253486 Field plate transistor with reduced field plate resistance
08/07/2007US7253485 Semiconductor device and manufacturing method thereof
08/07/2007US7253484 Low-power multiple-channel fully depleted quantum well CMOSFETs
08/07/2007US7253483 Semiconductor device layout and channeling implant process
08/07/2007US7253482 Structure for reducing overlap capacitance in field effect transistors
08/07/2007US7253481 High performance MOS device with graded silicide
08/07/2007US7253478 Semiconductor device
08/07/2007US7253477 Semiconductor device edge termination structure
08/07/2007US7253476 Semiconductor device with alternating conductivity type layer and method of manufacturing the same
08/07/2007US7253475 Power transistor cell and power transistor component with fusible link
08/07/2007US7253474 Quasi-vertical semiconductor component
08/07/2007US7253473 Semiconductor device and method of manufacturing the same
08/07/2007US7253472 Method of fabricating semiconductor device employing selectivity poly deposition
08/07/2007US7253471 Semiconductor structure having thick stabilization layer
08/07/2007US7253470 Floating gate with unique profile by means of undercutting for split-gate flash memory device
08/07/2007US7253469 Flash memory device having a graded composition, high dielectric constant gate insulator
08/07/2007US7253468 Flash memory and methods of fabricating the same
08/07/2007US7253467 Non-volatile semiconductor memory devices
08/07/2007US7253466 Crossbar array microelectronic electrochemical cells
08/07/2007US7253465 Semiconductor integrated circuit device and manufacturing method thereof
08/07/2007US7253464 Junction-isolated depletion mode ferroelectric memory devices and systems
08/07/2007US7253463 Semiconductor memory device and method of manufacturing the same
08/07/2007US7253460 Active matrix panel with two thin film transistors to a pixel
08/07/2007US7253459 Semiconductor devices and methods of manufacture thereof
08/07/2007US7253456 Diode structure and integral power switching arrangement
08/07/2007US7253455 pHEMT with barrier optimized for low temperature operation
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