Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2007
08/23/2007US20070194348 Circuit and a display using same
08/23/2007US20070194347 Compound semiconductor device and method of fabricating the same
08/23/2007US20070194346 Semiconductor device and inverter device using the same
08/23/2007US20070194345 Thin-film device
08/23/2007US20070194332 Light active sheet material
08/23/2007US20070194329 Nitride semiconductor light-emitting device and method of manufacturing the same
08/23/2007US20070194328 Nitride semiconductor light emitting device and manufacturing method thereof
08/23/2007US20070194327 Semiconductor light-emitting device and method for fabricating the same
08/23/2007US20070194323 Semiconductor device and manufacturing method thereof
08/23/2007US20070194322 Display apparatus and manufacturing method thereof
08/23/2007US20070194321 Light emitting element, light emitting device, and electronic device
08/23/2007US20070194320 Thin film transistor array panel and display device
08/23/2007US20070194319 Display device and method of driving the same
08/23/2007US20070194318 Organic light emitting diode display
08/23/2007US20070194317 Array substrate, display device having the same, and method thereof
08/23/2007US20070194316 Display apparatus
08/23/2007US20070194315 Semiconductor Device and Fabrication Method Thereof
08/23/2007US20070194314 Display device and electronic apparatus having the display device
08/23/2007US20070194313 Array substrate for liquid crystal display panel
08/23/2007US20070194312 Subpixel
08/23/2007US20070194311 Photoelectric transducer and its manufacturing method
08/23/2007US20070194309 Nitride Semiconductor Light-Emitting Device And Fabrication Method Thereof
08/23/2007US20070194308 Organic light emitting display capable of showing images on double sides thereof
08/23/2007US20070194307 Organic light emitting device
08/23/2007US20070194306 Light emitting element, light emitting device, and electronic appliance
08/23/2007US20070194305 Organic thin film transistor comprising fluorine-based polymer thin film and method for fabricating the same
08/23/2007US20070194304 Organic light emitting display and method of fabricating the same
08/23/2007US20070194303 Method for manufacturing organic light-emitting element, organic light-emitting device and organic EL panel
08/23/2007US20070194302 Organic thin-film transistor and fabrication method thereof and organic thin-film device
08/23/2007US20070194300 Low resistance tunnel junctions in wide band gap materials and method of making same
08/23/2007US20070194298 Semiconductor device comprising a lattice matching layer
08/23/2007US20070194296 Light emitting diode and manufacturing method therefor
08/23/2007US20070194295 Semiconductor device of Group III nitride semiconductor having oxide protective insulating film formed on part of the active region
08/23/2007US20070194294 Phase change memory devices and methods for fabricating the same
08/23/2007US20070193978 Methods for forming banks and organic thin film transistors comprising such banks
08/23/2007DE19954352B4 Halbleiterbauelement sowie Verfahren zur Herstellung desselben Of the same semiconductor device and methods for preparing
08/23/2007DE112005002280T5 U-Gate-Transistoren und Verfahren zur Fertigung U-gate transistors and methods of manufacture
08/23/2007DE10236646B4 Verfahren zur Herstellung einer nichtflüchtigen Speichervorrichtung mit einer selbstausgerichteten Gate-Struktur A method of manufacturing a nonvolatile memory device having a self-aligned gate structure
08/23/2007DE10204868B4 Speicherzelle mit Grabenspeichertransistor und Oxid-Nitrid-Oxid-Dielektrikum Memory cell with a memory transistor grave and oxide-nitride-oxide dielectric
08/23/2007DE102007007261A1 Semiconductor device has semiconductor layer and multiple side surfaces, where semiconductor layer section is vertical symmetric to given direction in vertical and horizontal directions and gate electrode is formed on gate insulated film
08/23/2007DE102006007093A1 Coating method for surface of semiconductor body, involves clearing away thin layer near surface within range of surface of semiconductor body, which is coated, by sputtering
08/23/2007DE102006006700A1 Power semiconductor component e.g. cool-metal oxide semiconductor component, has charge carrier recombination zones buried in semiconductor body and exhibiting high temperature resistance so that zones are consistent at temperatures
08/23/2007DE10137676B4 ZVS-Brückenschaltung zum entlasteten Schalten ZVS-bridge circuit for switching relieved
08/22/2007EP1821344A2 Heterojunction transistors including energy barriers and related methods
08/22/2007EP1821340A1 Bidirectional field-effect transistor and matrix converter
08/22/2007EP1820217A2 Insulated gate field effect transistors
08/22/2007EP1820213A2 Multi-bit nanocrystal memory
08/22/2007EP1820211A1 Strained silicon, gate engineered fermi-fets
08/22/2007EP1820210A2 Contact doping and annealing systems and processes for nanowire thin films
08/22/2007EP1661185A4 Semiconductor component and method of manufacturing same
08/22/2007EP1654207B1 Bis(2-acenyl)acetylene semiconductors
08/22/2007EP1490909B1 Active matrix electroluminescent display devices and their manufacture
08/22/2007EP0972301B1 Manufacturing a heterobipolar transistor and a laser diode on the same substrate
08/22/2007CN2938408Y High voltage P-type metal-oxide semiconductor
08/22/2007CN1333528C Reconfigurable logical circuit using transistor having spin-dependent transmission characteristics
08/22/2007CN1333468C Power MOSFET with deep implanted junctions
08/22/2007CN1333466C Trenched semiconductor devices and their manufacture
08/22/2007CN1333465C Semiconductor device
08/22/2007CN1333458C Method for manufacturing a non-volatile memory device
08/22/2007CN1333456C Method for fabricating semiconductor device with fine patterns
08/22/2007CN1333454C A silicon-on-insulator device with strain film and method for forming strain film
08/22/2007CN1333445C An oxide layer on a GAAS-based semiconductor structure and method of forming same
08/22/2007CN1333441C Nickel silicide with reduced interface roughness
08/22/2007CN1333440C Electrodes and their forming methods, thin film transistors, electronic circuits and display device therewith
08/22/2007CN1333439C Method for forming polycrystalline silicon film of polycrystalline silicon tft
08/22/2007CN1333432C Producing method for thin-film transistor array baseplate
08/22/2007CN1333430C Crystallizing device, crystallizing method and used phase-shift mask and filter
08/22/2007CN1333407C Data reservation of local trapped type nonvolatile memory
08/22/2007CN1333379C Method for manufacturing an electro-optical device
08/22/2007CN1333298C Display device
08/22/2007CN1333297C Semiconductor device
08/22/2007CN1333296C Semiconductor device
08/22/2007CN1333291C A method of forming a reflective electrode and a liquid crystal display device
08/22/2007CN101023531A Semiconductor device having a spacer layer doped with slower diffusing atoms than substrate
08/22/2007CN101023530A High-mobility bulk silicon pfet
08/22/2007CN101023529A Method of forming a solution processed device
08/22/2007CN101023524A Technique for creating different mechanical stress in different channel regions by forming an etch stop layer having differently modified intrinsic stress
08/22/2007CN101023519A A method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same
08/22/2007CN101023518A Method for manufacturing semiconductor device
08/22/2007CN101022134A Dual-gate, non-volatile memory cells, arrays thereof, methods of manufacturing the same and methods of operating the same
08/22/2007CN101022133A Electric erasable and programable nonvolatile storage and array and operating method thereof
08/22/2007CN101022132A Semiconductor device and method for manufacturing same
08/22/2007CN101022131A Unipolar carbon nanotube having a carrier-trapping material and unipolar field effect transistor having the unipolar carbon nanotube
08/22/2007CN101022130A High voltage mos device
08/22/2007CN101022129A Metal-semiconductor field effect transistor with source-drain double-concave structure
08/22/2007CN101022128A Nitride semiconductor device and method for manufacturing same
08/22/2007CN101022127A Three-dimensional slot grid metal semiconductor field effect transistor
08/22/2007CN101022126A Semiconductor device and related fabrication method
08/22/2007CN101022125A Compensation component having reduced and adjustable on-resistance
08/22/2007CN101022114A Non-volatile memory and producing method thereof
08/22/2007CN101022112A Non-volatile memory and producing method thereof
08/22/2007CN101022111A Non-volatile memory structure and producing method thereof
08/22/2007CN101022085A Semiconductor element and producing method thereof
08/22/2007CN101022084A Method for forming semiconductor devices
08/22/2007CN101022083A Semiconductor device with slot type grid and producing method thereof
08/22/2007CN101022080A Metal conducting wire and producing method thereof
08/22/2007CN101021632A Semi-penetrating and semi-reflecting liquid crystal display structure
08/21/2007US7260016 Non-volatile semiconductor memory device and writing method therefor
08/21/2007US7259996 Flash memory
08/21/2007US7259820 Active matrix type liquid crystal display device and method of manufacturing the same