Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
02/2000
02/23/2000CN1245392A Method for coating through-hole side wall with thick film
02/23/2000CN1245351A Semiconductor chip with surface covering layer
02/23/2000CN1245349A Method for manufacturing high-density semiconductor storage device
02/23/2000CN1245348A Method for producing material layer for composition of picture
02/22/2000US6028990 Method and apparatus for a lateral flux capacitor
02/22/2000US6028813 NOR type semiconductor memory device and a method for reading data stored therein
02/22/2000US6028804 Method and apparatus for 1-T SRAM compatible memory
02/22/2000US6028788 Flash memory device
02/22/2000US6028784 Ferroelectric memory device having compact memory cell array
02/22/2000US6028763 Capacitor and method for forming a capacitor
02/22/2000US6028758 Electrostatic discharge (ESD) protection for a 5.0 volt compatible input/output (I/O) in a 2.5 volt semiconductor process
02/22/2000US6028652 Array substrate for display device and manufacturing method thereof
02/22/2000US6028629 Solid-state imaging device and method of manufacturing the same
02/22/2000US6028580 Liquid crystal display device
02/22/2000US6028474 Semiconductor integrated circuit
02/22/2000US6028465 ESD protection circuits
02/22/2000US6028443 Test circuit for semiconductor integrated logic circuit using tristate buffers allowing control circuit for tristate to be tested
02/22/2000US6028361 Method of manufacturing of semiconductor device having low leakage current
02/22/2000US6028346 Isolated trench semiconductor device
02/22/2000US6028344 Bipolar transistor on a semiconductor-on-insulator substrate
02/22/2000US6028342 ROM diode and a method of making the same
02/22/2000US6028341 Latch up protection and yield improvement device for IC array
02/22/2000US6028340 Static random access memory cell having a field region
02/22/2000US6028338 Semiconductor integrated circuit device with electrostatic damage protection
02/22/2000US6028336 Triple polysilicon flash EEPROM arrays having a separate erase gate for each row of floating gates, and methods of manufacturing such arrays
02/22/2000US6028335 Semiconductor device
02/22/2000US6028334 Semiconductor device and method of manufacturing the same
02/22/2000US6028333 Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
02/22/2000US6028330 CMOS sensor having a structure to reduce white pixels
02/22/2000US6028327 Light-emitting device using an organic thin-film electroluminescent light-emitting element
02/22/2000US6028323 Quantum well infared image conversion panel and associated methods
02/22/2000US6028299 Linear image sensor device comprising first and second linear image sensor sections having first and second sensitivities
02/22/2000US6027987 Method of manufacturing a crystalline semiconductor
02/22/2000US6027983 Method of manufacturing trench isolate semiconductor integrated circuit device
02/22/2000US6027981 Method for forming a DRAM cell with a fork-shaped capacitor
02/22/2000US6027979 Method of forming an integrated circuit device
02/22/2000US6027974 Nonvolatile memory
02/22/2000US6027972 Method for producing very small structural widths on a semiconductor substrate
02/22/2000US6027971 Methods of forming memory devices having protected gate electrodes
02/22/2000US6027969 Capacitor structure for a dynamic random access memory cell
02/22/2000US6027968 Forming high surface area node by selectively etching alternating layers of low doped and high doped concentration borophosphosilicate glass to form surface protrusions within via sidewalls
02/22/2000US6027967 Method of making a fin-like stacked capacitor
02/22/2000US6027965 Method of manufacturing an integrated circuit with MOS transistors having high breakdown voltages, and with precision resistors
02/22/2000US6027964 Method of making an IGFET with a selectively doped gate in combination with a protected resistor
02/22/2000US6027962 Method of manufacturing semiconductor device having bipolar transistor and field-effect transistor
02/22/2000US6027961 CMOS semiconductor devices and method of formation
02/22/2000US6027955 Method of making an active pixel sensor integrated with a pinned photodiode
02/22/2000US6027953 Lateral PN arrayed digital X-ray image sensor
02/22/2000US6027947 Partially or completely encapsulated top electrode of a ferroelectric capacitor
02/22/2000US6027860 Method for forming a structure using redeposition of etchable layer
02/22/2000US6027666 Fast luminescent silicon
02/22/2000US6026964 Active pixel sensor cell and method of using
02/17/2000WO2000008688A1 An integrated circuit provided with esd protection means
02/17/2000WO2000008687A1 Integrated circuit comprising fuse links which can be separated by the action of energy
02/17/2000WO2000008682A1 Method for producing a storage cell
02/17/2000WO2000008681A1 Misted precursor deposition apparatus and method with improved mist and mist flow
02/17/2000WO2000008650A1 Mram array having a plurality of memory banks
02/17/2000WO2000008649A1 Memory device using a transistor and its fabrication method
02/17/2000WO1999063527A3 Data storage and processing apparatus, and method for fabricating the same
02/17/2000DE19937214A1 MOST contact structure, especially a gate contact structure, is produced using an etch-stop layer to protect the gate and adjacent side wall spacer during contact opening etching
02/17/2000DE19935947A1 Multilevel interconnection of a ferroelectric memory device formation method, produces interconnections of same material as ferroelectric capacitor electrodes
02/17/2000DE19914231A1 Semiconductor device, especially a DRAM cell, has a hydrofluoric acid resistant side wall film on a contact hole extending through an element isolation region to a doped substrate region
02/17/2000DE19837490A1 Method to measure two-dimensional potential distribution in CMOS semiconductor element and determine two-dimensional doping distribution, uses electron holography to measure phase of electron wave in transmission electron microscope
02/17/2000DE19835263A1 Integrierte Schaltung mit durch Energieeinwirkung auftrennbaren elektrischen Verbindungstellen Integrated circuit with separable exposure to energy electrical joints
02/16/2000EP0980101A2 Semiconductor integrated circuit and method for manufacturing the same
02/16/2000EP0980100A2 Trench capacitor for integrated circuit
02/16/2000EP0980095A1 Modular high frequency integrated circuit structure
02/16/2000EP0980075A1 A semiconductor memory device
02/16/2000EP0980074A1 Combined precharge and equalisation circuit
02/16/2000CN1244733A 低压有源半导体体器件 Low body active semiconductor devices
02/16/2000CN1244732A Semiconductor device
02/16/2000CN1244731A Semiconductor integrated circuit and its producing method
02/16/2000CN1244730A Semiconductor device and its producing method
02/16/2000CN1244727A Method for forming self alignment contact
02/15/2000US6026222 System for combinational equivalence checking
02/15/2000US6026049 Semiconductor memory with sensing stability
02/15/2000US6026043 Semiconductor memory device with reduced power consumption and stable operation in data holding state
02/15/2000US6026039 Parallel test circuit for semiconductor memory
02/15/2000US6026038 Wafer burn-in test circuit and method for testing a semiconductor memory
02/15/2000US6026028 Hot carrier injection programming and negative gate voltage channel erase flash EEPROM structure
02/15/2000US6026020 Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
02/15/2000US6026019 Two square NVRAM cell
02/15/2000US6026017 Compact nonvolatile memory
02/15/2000US6026010 Semiconductor memory device with bit line contact areas and storage capacitor contact areas
02/15/2000US6025748 Precharge device for semiconductor integrated circuit device
02/15/2000US6025746 ESD protection circuits
02/15/2000US6025740 Clock feeding circuit and method for adjusting clock skew
02/15/2000US6025733 Semiconductor memory device
02/15/2000US6025652 Semiconductor device and method of producing same
02/15/2000US6025633 Multi-level transistor fabrication method having an inverted, upper level transistor which shares a gate conductor with a non-inverted, lower level transistor
02/15/2000US6025632 Semiconductor integrated circuit with tungston silicide nitride thermal resistor
02/15/2000US6025629 Element isolation structure of a semiconductor device to suppress reduction in threshold voltage of parasitic MOS transistor
02/15/2000US6025628 High breakdown voltage twin well device with source/drain regions widely spaced from fox regions
02/15/2000US6025626 Nonvolatile memory cell
02/15/2000US6025625 Single-poly EEPROM cell structure operations and array architecture
02/15/2000US6025624 Shared length cell for improved capacitance
02/15/2000US6025623 Semiconductor device with high integration density and improved performance
02/15/2000US6025621 Integrated circuit memory devices having independently biased sub-well regions therein and methods of forming same
02/15/2000US6025620 Semiconductor device and method of producing the same
02/15/2000US6025614 Amplifier semiconductor element, method for fabricating the same, and amplifier semiconductor device