| Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
|---|
| 04/06/2000 | WO2000019441A2 Magnetoresistive memory having improved interference immunity |
| 04/06/2000 | WO2000019440A2 Magnetoresistive memory with low current density |
| 04/06/2000 | WO2000019397A1 Method for producing a component and corresponding component |
| 04/06/2000 | WO2000019224A1 Circuit configuration with a scan path that can be deactivated |
| 04/06/2000 | DE19946999A1 Ferroelectric memory device manufacture includes forming titanium and platinum layers on an insulation layer covered substrate and thermally treating under an oxygen atmosphere |
| 04/06/2000 | DE19929859A1 Trench capacitor, especially for use with DRAMs, has dielectric material on trench side walls with conducting material, further dielectric material and further conducting material |
| 04/06/2000 | DE19844531A1 Verfahren zur Herstellung von Transistoren A process for the production of transistors |
| 04/06/2000 | DE19842704A1 Kondensator mit einem Hoch-e-Dielektrikum oder einem Ferroelektrikum nach dem Fin-Stack-Prinzip und Herstellverfahren unter Einsatz einer Negativform Capacitor having a high-e-dielectric or a ferroelectric after the fin stack principle and preparation process using a female mold |
| 04/06/2000 | DE19842682A1 Kondensator mit einem Hoch-e-Dielektrikum oder einem Ferro-elektrikum nach dem Fin-Stack-Prinzip und Herstellverfahren Capacitor having a high dielectric-e or a ferro-elektrikum after the fin stack principle and preparation process |
| 04/05/2000 | EP0991129A1 Solar battery module and method for manufacturing the same |
| 04/05/2000 | EP0991128A2 Dynamic range extension of CCD imagers |
| 04/05/2000 | EP0991127A1 Hybrid device and method of assembling electrically active components |
| 04/05/2000 | EP0991125A1 Modifiable semiconductor circuit element |
| 04/05/2000 | EP0991124A2 DRAM memory array with four cells per bit line contact |
| 04/05/2000 | EP0991118A1 Method for realizing a multilevel ROM memory in a dual gate CMOS process and corresponding ROM memory cell |
| 04/05/2000 | EP0991117A2 A memory cell with a stacked capacitor |
| 04/05/2000 | EP0991116A2 Stacked capacitor memory cell and method of fabrication |
| 04/05/2000 | EP0991080A2 Non-volatile semiconductor memory device |
| 04/05/2000 | EP0991078A2 Quantum random address memory with magnetic readout and/or nano-memory elements |
| 04/05/2000 | EP0991077A2 Semiconductor memory device |
| 04/05/2000 | EP0990263A2 A substrate for high frequency integrated circuits |
| 04/05/2000 | EP0990059A1 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices |
| 04/05/2000 | EP0946988A4 Memory redundancy circuit using single polysilicon floating gate transistors as redundancy elements |
| 04/05/2000 | CN1249852A Subscriber interface protection circuit |
| 04/05/2000 | CN1249849A Strontium bismuth niobate tantalate ferroelectric thin film |
| 04/05/2000 | CN1249605A Imaging sensor capable of generating digital signal from optic integration |
| 04/05/2000 | CN1249539A Method for solving door interference of insulator base silicon transmission |
| 04/05/2000 | CN1249538A Modifiable semiconductor circuit element |
| 04/05/2000 | CN1249534A Method and system for testing IC in wafer stage |
| 04/05/2000 | CN1249518A Non-volatile semiconductor memory device |
| 04/05/2000 | CN1051172C Double grid substrate plate DRAM cell array |
| 04/05/2000 | CN1051164C Spacer flash cell process |
| 04/05/2000 | CA2284441A1 Electro-optical multisection monolithic component |
| 04/04/2000 | USRE36644 Tapered via, structures made therewith, and methods of producing same |
| 04/04/2000 | US6046950 Sense amplifier block layout for use in a dynamic random access memory |
| 04/04/2000 | US6046932 Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROM |
| 04/04/2000 | US6046929 Memory device with two ferroelectric capacitors per one cell |
| 04/04/2000 | US6046927 Nonvolatile semiconductor memory device, a method of fabricating the same, and read, erase write methods of the same |
| 04/04/2000 | US6046926 Ferroelectric memory and screening method therefor |
| 04/04/2000 | US6046924 Semiconductor memory device having a sense amplifier region formed in a triple-well structure |
| 04/04/2000 | US6046897 Segmented bus architecture (SBA) for electrostatic discharge (ESD) protection |
| 04/04/2000 | US6046627 Semiconductor device capable of operating stably with reduced power consumption |
| 04/04/2000 | US6046604 Semiconductor integrated circuit device having power reduction mechanism |
| 04/04/2000 | US6046547 Self-emission type image display device |
| 04/04/2000 | US6046543 High reliability, high efficiency, integratable organic light emitting devices and methods of producing same |
| 04/04/2000 | US6046492 Semiconductor temperature sensor and the method of producing the same |
| 04/04/2000 | US6046491 Semiconductor resistor element having improved resistance tolerance and semiconductor device therefor |
| 04/04/2000 | US6046489 Capacitor with high-dielectric-constant dielectric and thick electrode and fabrication method thereof |
| 04/04/2000 | US6046486 Heterojunction bipoplar mixer circuitry |
| 04/04/2000 | US6046485 Large area low mass IR pixel having tailored cross section |
| 04/04/2000 | US6046484 Gate structure of semiconductor memory |
| 04/04/2000 | US6046481 Transistor for preventing a thermal runaway caused by temperature rise in a bias circuit of the transistor |
| 04/04/2000 | US6046480 Protection circuit for semiconductor devices |
| 04/04/2000 | US6046479 Electronic devices comprising thin-film transistors |
| 04/04/2000 | US6046477 Dense SOI programmable logic array structure |
| 04/04/2000 | US6046476 SOI input protection circuit |
| 04/04/2000 | US6046474 Field effect transistors having tapered gate electrodes for providing high breakdown voltage capability and methods of forming same |
| 04/04/2000 | US6046470 Trench-gated MOSFET with integral temperature detection diode |
| 04/04/2000 | US6046469 Semiconductor storage device having a capacitor and a MOS transistor |
| 04/04/2000 | US6046468 Dynamic random access memory device and method for producing the same |
| 04/04/2000 | US6046467 Semiconductor device having capacitor |
| 04/04/2000 | US6046466 Solid-state imaging device |
| 04/04/2000 | US6046454 Semiconductor radiation detector with enhanced charge collection |
| 04/04/2000 | US6046446 Photoelectric conversion apparatus having semiconductor structure and refresh feature, and method for driving same |
| 04/04/2000 | US6046444 High sensitivity active pixel with electronic shutter |
| 04/04/2000 | US6046409 Multilayer microelectronic circuit |
| 04/04/2000 | US6046109 Creation of local semi-insulating regions on semiconductor substrates |
| 04/04/2000 | US6046093 Method of forming capacitors and related integrated circuitry |
| 04/04/2000 | US6046087 Fabrication of ESD protection device using a gate as a silicide blocking mask for a drain region |
| 04/04/2000 | US6046082 Method for manufacturing semiconductor device |
| 04/04/2000 | US6046080 Overcoating polysilicon layer on a dielectric layer with silicon oxynitride, forming layout for load resistor by photolithography, etching to remove silicon oxynitride and polysilicon layers from areas other than load resistor layout |
| 04/04/2000 | US6046079 Method for prevention of latch-up of CMOS devices |
| 04/04/2000 | US6046070 Method of post-processing solid-state imaging device |
| 04/04/2000 | US6046069 Solid-state image pick-up device and method for manufacturing the same |
| 04/04/2000 | US6046068 Coating substrate surface with aluminum nitride passivating layer having pattern of openings, overcoating with metal, etching metal overlying passivating layer while leaving metal in openings to remain as separate contacts |
| 04/04/2000 | US6046063 Simplification; increasing aperture ratio |
| 04/04/2000 | US6046059 Bombarding the oxide present between plug and electrode with ions and mixing the oxide with materials of the electrode and the plug to increase electroconductivity between the electrode and the plug |
| 04/04/2000 | US6045930 Emission layer containing a tris/ethynil-phenyl/amine derivative as a receiving compound |
| 03/30/2000 | WO2000018193A1 Method for manufacturing electroluminescence device |
| 03/30/2000 | WO2000017938A1 Semiconductor device |
| 03/30/2000 | WO2000017936A1 Ferroelectric thin films of reduced tetragonality |
| 03/30/2000 | WO2000017933A1 Bipolar transistor and method for producing same |
| 03/30/2000 | WO2000017930A1 High-speed imaging device |
| 03/30/2000 | WO2000017929A1 Ferroelectric device and semiconductor device |
| 03/30/2000 | WO2000017915A1 Method of manufacturing a semiconductor device comprising a semiconductor body having a surface provided with a coil having a magnetic core |
| 03/30/2000 | WO2000017911A1 Active matrix organic light emitting diode with doped organic layer having increased thickness |
| 03/30/2000 | WO2000017903A2 Inorganic-based color conversion matrix element for organic color display devices and method of fabrication |
| 03/30/2000 | WO2000017902A1 Fuse circuit having zero power draw for partially blown condition |
| 03/30/2000 | WO2000017882A1 Method of making flexibly partitioned metal line segments for a simultaneous operation flash memory device with a flexible bank partition architecture |
| 03/30/2000 | WO2000017660A1 Electronic component |
| 03/30/2000 | WO2000016938A1 Color organic light-emitting device structure and method of fabrication |
| 03/30/2000 | WO1999059379A3 An organic light emitting diode device for use with opaque substrates |
| 03/30/2000 | DE19943785A1 Electronic cascade circuit, e.g. with a silicon MOSFET and a silicon carbide JFET, has a first component grid control voltage partially applied to a second component grid connection at a level below its p-n junction diffusion voltage |
| 03/30/2000 | DE19904575C1 Temperature-protected semiconductor switch with integrated diode-type temperature sensor |
| 03/30/2000 | DE19842883A1 Elektrisch programmierbare, nichtflüchtige Speicherzellenanordnung Electrically programmable, non-volatile memory cell arrangement |
| 03/30/2000 | DE19842882A1 Verfahren zum Herstellen eines Dotierungsgebiets A method of producing a doped region |
| 03/30/2000 | DE19841754A1 Schalttransistor mit reduzierten Schaltverlusten Switching transistor with reduced switching losses |
| 03/30/2000 | DE19832095C1 Stapelkondensator-Herstellungsverfahren Stacked capacitor manufacturing method |
| 03/30/2000 | CA2343129A1 Ferroelectric thin films of reduced tetragonality |
| 03/30/2000 | CA2316977A1 Fuse circuit having zero power draw for partially blown condition |