Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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03/29/2000 | EP0989783A1 Organic electroluminescence element and manufacturing method therefor |
03/29/2000 | EP0989778A1 Substrate for patterning thin film and surface treatment thereof |
03/29/2000 | EP0989741A2 Variable high spatial resolution and low bit resolution CMOS area image sensor |
03/29/2000 | EP0989615A2 Semiconductor device with capacitor and manufacturing method thereof |
03/29/2000 | EP0989614A2 TFT with an LDD structure and its manufacturing method |
03/29/2000 | EP0989612A1 Memory cell array and corresponding fabrication process |
03/29/2000 | EP0989604A2 In situ deposition of gate oxide and amorphous silicon electrode and corresponding structure |
03/29/2000 | EP0989603A2 Trench capacitor with insulating collar and process for its manufacturing |
03/29/2000 | EP0989596A1 Substrate for device manufacturing, process for manufacturing the substrate, and method of exposure using the substrate |
03/29/2000 | EP0989534A1 Active matrix light emitting device and method of manufacturing the same |
03/29/2000 | EP0989495A1 Electronic circuit for protecting data contained in a semiconductor device |
03/29/2000 | EP0988749A1 Compact low-noise active pixel sensor with progressive row reset |
03/29/2000 | EP0988704A1 Analogue-to-digital conversion using frequency-modulated input or intermediate values |
03/29/2000 | EP0988652A2 Radiation-sensitive semiconductor device and method of manufacturing same |
03/29/2000 | EP0925178A4 Memory device using movement of protons |
03/29/2000 | EP0902843B1 Method for making a thin film of solid material, and uses thereof |
03/29/2000 | EP0616335B1 Nonvolatile semiconductor memory device having a status register and test method for the same |
03/29/2000 | CN1249066A Semiconductor IC device with its layout designed by the cell base method |
03/29/2000 | CN1248797A Improvement for controllable property buried in device layer |
03/29/2000 | CN1248796A Method for making film resistor |
03/29/2000 | CN1248793A Design for enhancement avalanche mode insulator substrate silicon complementary MOS device |
03/29/2000 | CN1248791A Method for forming wiring layer on integrated circuit with high-low topotactic area |
03/29/2000 | CN1248790A Electric capacitor with high 'epsilon' dielectric material |
03/29/2000 | CN1248789A Laminated element with material layer and barrier layer for preventing diffusion material from diffusion |
03/29/2000 | CN1248787A Method for making semiconductor device |
03/29/2000 | CN1248757A Active array display device |
03/29/2000 | CN1050939C Thin film semiconductor device for display and method of producing same |
03/29/2000 | CN1050938C Solid-state imaging device and method of manufacturing same |
03/29/2000 | CN1050937C Electrically erasable memory elements characterized by reduced current and improved thermal stability |
03/29/2000 | CN1050936C Light source and technique for mounting LED |
03/29/2000 | CN1050934C Method for making integrated circuit |
03/29/2000 | CN1050933C Method for making capacitors of semiconductor device |
03/29/2000 | CN1050929C Sub-micron bonded solicon by trench planarization |
03/29/2000 | CN1050924C 半导体存储装置 The semiconductor memory device |
03/28/2000 | US6044128 X-ray imaging apparatus and X-ray imaging analysis apparatus |
03/28/2000 | US6044035 Semiconductor memory device having level-shifted precharge signal |
03/28/2000 | US6044034 Multiport memory having plurality of groups of bit lines |
03/28/2000 | US6044028 Semiconductor storage device and electronic equipment using the same |
03/28/2000 | US6044024 Interactive method for self-adjusted access on embedded DRAM memory macros |
03/28/2000 | US6044016 Nand-type semiconductor memory device |
03/28/2000 | US6044015 Method of programming a flash EEPROM memory cell array optimized for low power consumption |
03/28/2000 | US6044011 Static-random-access-memory cell |
03/28/2000 | US6044009 DRAM cell arrangement and method for its production |
03/28/2000 | US6043969 Ballast resistors with parallel stacked NMOS transistors used to prevent secondary breakdown during ESD with 2.5 volt process transistors |
03/28/2000 | US6043968 ESD protection circuit |
03/28/2000 | US6043859 Active matrix base with reliable terminal connection for liquid crystal display device |
03/28/2000 | US6043800 Head mounted liquid crystal display system |
03/28/2000 | US6043724 Two-stage power noise filter with on and off chip capacitors |
03/28/2000 | US6043687 Integrated circuit precision resistor ratio matching |
03/28/2000 | US6043683 Output pad circuit using control signal |
03/28/2000 | US6043638 Reference voltage generating circuit capable of generating stable reference voltage independent of operating environment |
03/28/2000 | US6043637 Voltage generator circuit |
03/28/2000 | US6043561 Electronic material, its manufacturing method, dielectric capacitor, non-volatile memory and semiconductor device |
03/28/2000 | US6043552 Semiconductor device and method of manufacturing the semiconductor device |
03/28/2000 | US6043550 Photodiode and photodiode module |
03/28/2000 | US6043543 Read-only memory cell configuration with trench MOS transistor and widened drain region |
03/28/2000 | US6043542 Method and integrated circuit structure for preventing latch-up in CMOS integrated circuit devices |
03/28/2000 | US6043540 Static RAM having cell transistors with longer gate electrodes than transistors in the periphery of the cell |
03/28/2000 | US6043538 Device structure for high voltage tolerant transistor on a 3.3 volt process |
03/28/2000 | US6043537 Embedded memory logic device using self-aligned silicide and manufacturing method therefor |
03/28/2000 | US6043536 Semiconductor device |
03/28/2000 | US6043534 High voltage semiconductor device |
03/28/2000 | US6043530 Flash EEPROM device employing polysilicon sidewall spacer as an erase gate |
03/28/2000 | US6043528 Semiconductor memory device having trench-type capacitor structure using high dielectric film and its manufacturing method |
03/28/2000 | US6043527 Circuits and methods for a memory cell with a trench plate trench capacitor and a vertical bipolar read device |
03/28/2000 | US6043526 Semiconductor memory cell using a ferroelectric thin film and a method for fabricating it |
03/28/2000 | US6043525 High speed CMOS photodetectors with wide range operating region |
03/28/2000 | US6043523 Charge coupled device and method of fabricating the same |
03/28/2000 | US6043522 Field effect transistor array including doped two-cell isolation region for preventing latchup |
03/28/2000 | US6043521 Layout pattern of memory cell circuit |
03/28/2000 | US6043519 Junction high electron mobility transistor-heterojunction bipolar transistor (JHEMT-HBT) monolithic microwave integrated circuit (MMIC) and single growth method of fabrication |
03/28/2000 | US6043511 Thin film transistor array panel used for a liquid crystal display having patterned data line components |
03/28/2000 | US6043508 Photodetector involving a MOSFET having a floating gate |
03/28/2000 | US6043479 MOS active pixel sensor unit with a shutter |
03/28/2000 | US6043478 Active pixel sensor with shared readout structure |
03/28/2000 | US6043132 Method for forming HSG silicon film of semiconductor device |
03/28/2000 | US6043129 High density MOSFET with raised source and drain regions |
03/28/2000 | US6043128 Semiconductor device handling multi-level voltages |
03/28/2000 | US6043127 Method for manufacturing multiple stage ROM unit |
03/28/2000 | US6043125 Method of fabricating vertical power MOSFET having low distributed resistance |
03/28/2000 | US6043123 Triple well flash memory fabrication process |
03/28/2000 | US6043122 Three-dimensional non-volatile memory |
03/28/2000 | US6043118 Semiconductor memory circuit device and method for fabricating a semiconductor memory device circuit |
03/28/2000 | US6043117 SRAM cell employing substantially vertically elongated pull-up resistors and methods of making, and resistor constructions and method of making |
03/28/2000 | US6043115 Method for avoiding interference in a CMOS sensor |
03/28/2000 | US6043114 Process for manufacturing a semiconductor wafer, a semiconductor wafer, process for manufacturing a semiconductor integrated circuit device, and semiconductor integrated circuit device |
03/28/2000 | US6042391 High density electrical connectors |
03/23/2000 | WO2000016407A2 Switching transistor with reduced switching losses |
03/23/2000 | WO2000016404A1 Lateral bipolar transistor and method of making same. |
03/23/2000 | WO2000016401A1 Method of operating a charge coupled device in an accelerated mode, and in conjunction with an optical symbology imager |
03/23/2000 | WO2000016399A1 Semiconductor circuit |
03/23/2000 | WO2000016396A1 Simox substrate and method for production thereof |
03/23/2000 | WO2000016362A1 Full-color light emitting device |
03/23/2000 | WO2000015865A1 Method for growing oxide thin films containing barium and strontium |
03/23/2000 | WO1999063542A8 Radiation hardened six transistor random access memory and memory device |
03/23/2000 | DE19858759C1 Integrated circuit with nanoscale devices and CMOS device |
03/23/2000 | DE19851866C1 Nonvolatile memory array has series-connected selection and storage transistors and a ferroelectric capacitor connected between a selection transistor connection and a storage transistor control electrode |
03/23/2000 | DE19845793A1 Bipolar transistor, especially a vertical bipolar transistor for high speed applications, produced using an initial low temperature deposition step to form a buffer layer on an insulation layer |
03/23/2000 | DE19843350A1 Electronic magneto-resistive memory cell of Magnetic RAM type has magnetic sensor element in form of AMR or GMR (Giant-Magneto-resistance), enabling more compact data densities to be achieved |
03/22/2000 | EP0987774A2 An electrode having enhanced hole injection |