Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
03/2000
03/22/2000EP0987765A2 DRAM trench capacitor
03/22/2000EP0987764A1 Electrically programmable non-volatile memory cell arrangement
03/22/2000EP0987763A1 Diode connected transistor and related process of fabrication
03/22/2000EP0987759A2 Electrical fuses in semiconductors
03/22/2000EP0987756A2 Stacked DRAM fin capacitor and method of making the same
03/22/2000EP0987755A2 Stacked DRAM fin capacitor and method of making the same
03/22/2000EP0987753A2 Stacked DRAM fin capacitor and method of making the same
03/22/2000EP0987751A1 Isolation wall between power devices
03/22/2000EP0987742A2 Process for forming a doped region through diffusion
03/22/2000EP0987722A2 Semiconductor surge absorber, electrical-electronic apparatus, and power module using the same
03/22/2000EP0987218A1 Process for the formation of oxide ceramic thin film
03/22/2000EP0986898A1 Cmos image sensor with improved fill factor
03/22/2000EP0986826A1 Heat treatment method for semiconductor substrates
03/22/2000CN1248130A Camera assembly
03/22/2000CN1248101A Semiconductor integrated circuit and its testing method
03/22/2000CN1248098A Film semiconductor integrated circuit
03/22/2000CN1248069A Semiconductor device and process for producing the same
03/22/2000CN1248068A Condenser installed on carriage in semiconductor device and its manufacture
03/22/2000CN1248067A Semiconductor device with laminated electrode formed by hemispherical crystal bring-up
03/22/2000CN1248066A Channel condenser with epitaxial buried layer
03/22/2000CN1248065A Vertical device and method for semiconductor chip
03/22/2000CN1248038A Semiconductor device and its formaing method
03/22/2000CN1248037A Active matrix display
03/22/2000CN1050699C Flash EEPROM cell and manufacturing method thereof
03/22/2000CN1050695C Method for manufacturing highly integrated semiconductor device
03/22/2000CN1050692C Method for forming junction in high speed EEPROM unit
03/21/2000US6041014 Nonvolatile semiconductor memory device having row decoder
03/21/2000US6041013 Semiconductor memory device, method of laying out semiconductor memory device, method of driving semiconductor pattern of semiconductor device
03/21/2000US6041009 Apparatus for stabilizing an antifuse used for a memory device
03/21/2000US6041002 Semiconductor memory device and method of testing the same
03/21/2000US6040995 Method of operating a storage cell arrangement
03/21/2000US6040991 SRAM memory cell having reduced surface area
03/21/2000US6040968 EOS/ESD protection for high density integrated circuits
03/21/2000US6040859 Image sensing apparatus and method for discharging dark current charge stored therein
03/21/2000US6040810 Display device having display and imaging pixels sandwiched between same substrates
03/21/2000US6040735 Reference voltage generators including first and second transistors of same conductivity type
03/21/2000US6040733 Two-stage fusible electrostatic discharge protection circuit
03/21/2000US6040712 Apparatus and method for protecting a circuit during a hot socket condition
03/21/2000US6040619 Semiconductor device including antireflective etch stop layer
03/21/2000US6040616 Device and method of forming a metal to metal capacitor within an integrated circuit
03/21/2000US6040615 Semiconductor device with moisture resistant fuse portion
03/21/2000US6040614 Semiconductor integrated circuit including a capacitor and a fuse element
03/21/2000US6040612 Image pickup apparatus for endoscope having reduced diameter
03/21/2000US6040610 Semiconductor device
03/21/2000US6040609 Process for integrating, in a single semiconductor chip, MOS technology devices with different threshold voltages
03/21/2000US6040606 Integrated circuit structure with dual thickness cobalt silicide layers and method for its manufacture
03/21/2000US6040605 Semiconductor memory device
03/21/2000US6040604 Semiconductor component comprising an electrostatic-discharge protection device
03/21/2000US6040603 Electrostatic discharge protection circuit employing MOSFETs having double ESD implantations
03/21/2000US6040596 Dynamic random access memory devices having improved peripheral circuit resistors therein
03/21/2000US6040594 High permittivity ST thin film and a capacitor for a semiconductor integrated circuit having such a thin film
03/21/2000US6040593 Image sensor having self-aligned silicide layer
03/21/2000US6040592 Well to substrate photodiode for use in a CMOS sensor on a salicide process
03/21/2000US6040591 Solid state imaging device having refractive index adjusting layer and method for making same
03/21/2000US6040520 Photoelectric conversion layer which is disposed on a flexible substrate and is constituted by a laminated layer of non-single crystalline silicon thin films, alloy of iron and nickel
03/21/2000US6040234 Method of manufacturing semiconductor device without bird beak effect
03/21/2000US6040228 Capacitance-forming method
03/21/2000US6040225 Method of fabricating polysilicon based resistors in Si-Ge heterojunction devices
03/21/2000US6040222 Method for fabricating an electrostatistic discharge protection device to protect an integrated circuit
03/21/2000US6040218 Two square NVRAM cell
03/21/2000US6040217 Fabricating method of an ultra-fast pseudo-dynamic nonvolatile flash memory
03/21/2000US6040216 Method (and device) for producing tunnel silicon oxynitride layer
03/21/2000US6040215 Method of manufacturing semiconductor device including memory cell having transistor
03/21/2000US6040213 Polysilicon mini spacer for trench buried strap formation
03/21/2000US6040211 Semiconductors having defect denuded zones
03/21/2000US6040210 2F-square memory cell for gigabit memory applications
03/21/2000US6040209 Semiconductor memory device and method of forming transistors in a peripheral circuit of the semiconductor memory device
03/21/2000US6040204 Method of stacking chips with a removable connecting layer
03/21/2000US6040203 Clock skew minimization and method for integrated circuits
03/21/2000US6040202 Color linear charge coupled device and method for driving the same
03/21/2000US6040201 Titanium nitride, titanium oxide
03/21/2000US6040200 Method of fabricating semiconductor device having stacked-layered substrate
03/21/2000US6039577 Method of forming diodes
03/16/2000WO2000015009A1 Light source and display device
03/16/2000WO2000014813A1 Device with optical communication means
03/16/2000WO2000014808A1 Ferroelectric transistor, its use in a storage cell system and its method of production
03/16/2000WO2000014806A1 Vertical bipolar transistor and method for the production thereof
03/16/2000WO2000014804A1 Dielectric element and production method thereof and semiconductor device
03/16/2000WO2000014803A1 Low trigger and holding voltage scr device for esd protection
03/16/2000WO2000014801A1 High voltage shield
03/16/2000WO2000014796A1 Method of forming a silicon contact interface
03/16/2000WO2000014794A1 Communication module
03/16/2000WO2000014778A1 Diffusion barrier layers and methods of forming same
03/16/2000WO2000014777A1 Fabrication method for high resolution full color organic led displays
03/16/2000WO2000014748A1 Magnetoresistive element and use of same as storage element in a storage system
03/16/2000WO2000002249A3 Integrated circuit with p-n junctions with reduced defects
03/16/2000WO1999065063A3 Dram storage capacitor
03/16/2000WO1999060414A3 Voltage level indicator
03/16/2000DE19943175A1 Etching process, especially for forming a tungsten wiring structure or barrier metal for a thin film resistor, comprises oxidizing and then removing a tungsten thin film region with an alkaline solution
03/16/2000DE19931916A1 Single chip semiconductor component with different gate oxide thicknesses, useful for multimedia systems, has vertical channel regions, impurity regions overlapping at a trench bottom and transistor gates buried in trenches
03/16/2000DE19912208A1 Field effect semiconductor component, such as MOSFET, with MOS structure in semiconductor layer of first conductivity
03/16/2000DE19842014C1 Herstellungsverfahren für einen Kondensator Manufacturing method of a capacitor
03/16/2000DE19841445A1 Three-level word line decoder circuit for EEPROM
03/16/2000DE19834649C1 Verfahren zum Herstellen einer Speicherzelle A method for fabricating a memory cell
03/16/2000CA2342904A1 High voltage shield
03/15/2000EP0986172A2 An integrated acoustic thin film resonator
03/15/2000EP0986112A2 An efficient method for fabricating organic light emitting diodes
03/15/2000EP0986109A1 Solar cell module
03/15/2000EP0986107A1 Cell array structure for an electrically erasable and programmable non-volatile memory device
03/15/2000EP0986106A1 Article comprising an inductor
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