Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
03/2000
03/02/2000DE19940231A1 Bootstrapped CMOS driver for driving large capacitive load; has drive unit. with pull-up and pull-down devices and bootstrap unit for amplifying pull-up and pull-down devices' gate voltages
03/02/2000DE19843979C1 Memory cell array, for a FeRAM or DRAM, has trench bottom and ridge crest planar transistors with source regions connected by bit lines angled to word lines
03/02/2000DE19838442C1 Photodetector, especially a photodiode array useful for optical data storage and transmission, image processing, pattern recognition and spectrometry, is produced by back face bonding of a thinned photodetector wafer to a contact substrate
03/02/2000CA2341102A1 Electrically erasable nonvolatile memory
03/01/2000EP0982974A1 Method of producing organic el element and organic el element
03/01/2000EP0982779A2 Memory structure in ferroelectric nonvolatile memory and readout method therefor
03/01/2000EP0982778A1 A semiconductor device having nonvolatile memory cells each of which comprises a memory transistor and a selection transistor
03/01/2000EP0982777A1 Wordline driver circuit using ring-shaped devices
03/01/2000EP0982776A2 ESD protection thyristor with trigger diode
03/01/2000EP0982772A1 A semiconductor non-planar storage capacitor
03/01/2000EP0982736A2 Magnetic memory
03/01/2000EP0982616A1 Optical demultiplexer
03/01/2000EP0982615A1 Optical demultiplexer and method of assembling the same
03/01/2000EP0981833A2 Integrated cmos circuit configuration, and production of same
03/01/2000EP0981655A2 Chemical vapour deposition precursors
03/01/2000EP0781455A4 Integrated circuit contacts with secured stringers
03/01/2000CN1246268A Driving circuit for stacked organic light emitting devices
03/01/2000CN1245977A Infield-aided metal ultramicro-particle/medium composite photoelectric emitting film and its application
03/01/2000CN1245976A 半导体器件 Semiconductor devices
03/01/2000CN1050007C Layout method for integrated circuit
03/01/2000CN1050005C Method for making integrated circuit with interconnected capacitor
02/2000
02/29/2000US6031982 Layout design of integrated circuit, especially datapath circuitry, using function cells formed with fixed basic cell and configurable interconnect networks
02/29/2000US6031779 Dynamic memory
02/29/2000US6031778 Semiconductor integrated circuit
02/29/2000US6031774 Internal power supply voltage generating ciruit and the method for controlling thereof
02/29/2000US6031771 Memory redundancy circuit using single polysilicon floating gate transistors as redundancy elements
02/29/2000US6031764 Nonvolatile semiconductor memory device
02/29/2000US6031704 Electrostatic protection circuit in a semiconductor device
02/29/2000US6031589 Liquid crystal display device and the fabrication method thereof
02/29/2000US6031571 Solid-state imaging device
02/29/2000US6031406 Single rail regulator
02/29/2000US6031405 ESD protection circuit immune to latch-up during normal operation
02/29/2000US6031395 CMOS semiconductor circuit for generating high output voltage
02/29/2000US6031366 Variable current source with deviation compensation
02/29/2000US6031291 Common contact hole structure in semiconductor device
02/29/2000US6031290 Electronic circuit
02/29/2000US6031289 Integrated circuit which uses a recessed local conductor for producing staggered interconnect lines
02/29/2000US6031288 Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof
02/29/2000US6031287 Contact structure and memory element incorporating the same
02/29/2000US6031274 Back irradiation type light-receiving device and method of making the same
02/29/2000US6031273 All-metal, giant magnetoresistive, solid-state component
02/29/2000US6031271 High yield semiconductor device and method of fabricating the same
02/29/2000US6031270 Methods of protecting a semiconductor device
02/29/2000US6031269 Quadruple gate field effect transistor structure for use in integrated circuit devices
02/29/2000US6031268 Complementary semiconductor device and method for producing the same
02/29/2000US6031267 Compact static RAM cell
02/29/2000US6031266 Semiconductor device with conductive sidewall film
02/29/2000US6031263 DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate
02/29/2000US6031262 Semiconductor memory device having capacitor-over-bitline cell with multiple cylindrical storage electrode offset from node contact and process of fabrication thereof
02/29/2000US6031260 Semiconductor memory device and method for manufacturing the same
02/29/2000US6031259 Solid state image pickup device and manufacturing method therefor
02/29/2000US6031257 Semiconductor integrated circuit device
02/29/2000US6031254 Monolithic assembly of an IGBT transistor and a fast diode
02/29/2000US6031250 Integrated circuit devices and methods employing amorphous silicon carbide resistor materials
02/29/2000US6031249 CMOS semiconductor device having boron doped channel
02/29/2000US6031248 Hybrid sensor pixel architecture
02/29/2000US6031247 Liquid crystal display
02/29/2000US6031231 Infrared focal plane array
02/29/2000US6031217 Apparatus and method for active integrator optical sensors
02/29/2000US6030894 A diffusion layer of the opposite conductivity type formed on silicon substrate, dilectric covering the substrate surface, a hole is formed in dielectric layer which reaches the diffusion layer, forming silicon/germenium silicide/silicon
02/29/2000US6030888 Method of fabricating high-voltage junction-isolated semiconductor devices
02/29/2000US6030877 Forming gold film by electroless plating using potassium gold cyanide, potassium cyanide, sodium borohydride, disodium ethylenediamine tetraacetic acid bath to form inductor
02/29/2000US6030876 Semiconductor device and method of manufacture thereof
02/29/2000US6030873 Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof
02/29/2000US6030871 Process for producing two bit ROM cell utilizing angled implant
02/29/2000US6030869 Method for fabricating nonvolatile semiconductor memory device
02/29/2000US6030868 Forming first polysilcon layer over oxide coated substrate, forming interpoly dielectric layer over first polysilicon, a portionof which is etched to expose the polysilicon so as to pattern floating gates on either side of exposed area
02/29/2000US6030866 Method of manufacturing a capacitor
02/29/2000US6030865 Process for manufacturing semiconductor integrated circuit device
02/29/2000US6030864 Vertical NPN transistor for 0.35 micrometer node CMOS logic technology
02/29/2000US6030860 Elevated substrate formation and local interconnect integrated fabrication
02/29/2000US6030852 Forming a first film on a photodiode part, having a concave surface, forming lower resin and upper resin microlens layers having higher and same refractive index than first layer accordingly, inbetween a flattening film of lower refraction
02/29/2000US6030847 Forming an opening in dielectric layer, forming first, second and third portion of electrode, depositing a third layer of dielectric material selected from barium strontium titinate, titinate of strontium, barium or lead, and mixed titinates
02/29/2000US6030700 Multicolor light emitting device comprises first and second organic devices stacked one upon the other to form layered structure with each separated from others by conductive layer to enable each to receive separate bias potential
02/29/2000US6030548 Static random access memory device (sram) having electrical balance because, in a cell current path, a contact portion other than a bit line contact and a ground contact is not provided; overlapping of gate electrodes with the word line
02/29/2000US6029963 Semiconductor memory device having novel layout pattern
02/29/2000CA2182366C Electromagnetic radiation imaging device using dual gate thin film transistors
02/24/2000WO2000010198A1 Method of selectively forming silicide
02/24/2000WO2000010194A2 Solid state radiation detector with enhanced life duration
02/24/2000WO2000010179A1 Bonding wire inductor and manufacturing method thereof
02/24/2000WO2000010178A1 Magnetoresistive element and the use thereof as storage element in a storage cell array
02/24/2000WO2000010172A2 Storage cell array and corresponding production method
02/24/2000WO2000010171A1 On-chip word line voltage generation for dram embedded in logic process
02/24/2000WO2000010024A1 Device comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer
02/24/2000WO2000010022A1 Magnetic field sensor with perpendicular to layer sensitivity, comprising a giant magnetoresistance material or a spin tunnel junction
02/24/2000WO2000010020A1 Method for measuring two-dimensional potential distribution in cmos semiconductor components
02/24/2000WO1999054918A3 Manufacture of trench-gate semiconductor devices
02/24/2000WO1999053539A9 Silicon-germanium etch stop layer system
02/24/2000DE19912220A1 High density semiconductor memory device, especially an SOI-DRAM, is produced by embedding the capacitor in the insulator underneath an SOI wafer prior to forming the transistor
02/24/2000DE19836567A1 Memory cell structure with magneto-resistive memory elements comprises a magnetizable yoke surrounding one of the intersecting lines at a memory element location
02/24/2000DE19836233A1 High voltage lateral SOI-DMOS transistor for an IC has a drift space covered with a thin passivating silicon dioxide layer and overlying thicker silicon nitride and CVD oxide layers
02/24/2000DE19832991A1 Speicheranordnung aus einer Vielzahl von resistiven ferroelektrischen Speicherzellen Memory arrangement comprising a multiplicity of resistive ferroelectric memory cells
02/23/2000EP0981165A1 Thin film transistors
02/23/2000EP0981162A1 Semiconductor chip with surface cover against optical inspection of the circuit structure
02/23/2000EP0981158A2 Method of forming buried strap for trench capacitor
02/23/2000EP0981157A2 Circuitry and method of forming the same
02/23/2000EP0980588A1 Device based on quantic islands and method for making same
02/23/2000EP0980587A1 Semiconductor imaging device
02/23/2000EP0846325B1 Reduced area sense amplifier isolation layout in a dynamic ram architecture
02/23/2000CN1245581A Organic light emitting device containing protection layer
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