| Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
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| 01/27/2000 | DE19832994A1 Ferroelectric memory arrangement |
| 01/27/2000 | CA2338065A1 Electro-optic semiconductor devices and method for making the same |
| 01/26/2000 | EP0975093A1 Integrated circuit with variable capacitor |
| 01/26/2000 | EP0975025A1 Photoelectric conversion integrated circuit device |
| 01/26/2000 | EP0975023A1 Electrostatic discharge protection for salicided devices and method of making same |
| 01/26/2000 | EP0975022A1 Method for manufacturing electronic devices comprising non-volatile memory cells and LV transistors, with salicided junctions |
| 01/26/2000 | EP0975021A1 Process for manufacturing an electronic device including MOS transistors with salicided junctions and non-salicided resistors |
| 01/26/2000 | EP0975020A1 Method for manufacturing electronic devices comprising HV transistors and LV transistors, with salicided junctions |
| 01/26/2000 | EP0975018A1 Method of forming a capacitor within an integrated circuit |
| 01/26/2000 | EP0975013A2 Method of manufacturing an oxide layer on a GaAs-based semiconductor body |
| 01/26/2000 | EP0974905A2 An integrated circuit memory device with redundancy |
| 01/26/2000 | EP0974166A1 Nonvolatile semiconductor memory |
| 01/26/2000 | EP0974165A2 Semiconductor device with a bipolar transistor, and method of manufacturing such a device |
| 01/26/2000 | EP0974164A2 Thin film transistors and electronic devices comprising such |
| 01/26/2000 | EP0974161A1 Semiconductor component with a structure for preventing onset of cross currents |
| 01/26/2000 | EP0974147A1 Electrically erasable nonvolatile memory |
| 01/26/2000 | EP0974146A1 Nonvolatile memory |
| 01/26/2000 | EP0617363B1 Defective cell substitution in EEprom array |
| 01/26/2000 | CN1242924A Active matrix display |
| 01/26/2000 | CN1242904A Display type image sensor |
| 01/26/2000 | CN1242874A lateral bipolar field effect mode hydrid transistor and method for mfg. same |
| 01/26/2000 | CN1242860A Sound encoder and sound decoder |
| 01/26/2000 | CN1242855A Active matrix display |
| 01/26/2000 | CN1242854A Active matrix display |
| 01/26/2000 | CN1242608A Field effect transistor |
| 01/26/2000 | CN1242607A Non-volatile semiconductor memory device and process for producing the same |
| 01/26/2000 | CN1242606A Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes |
| 01/26/2000 | CN1242605A Microstructure including circuit integrated in substrate on one surface of which is arranged flat coil |
| 01/26/2000 | CN1242599A Non-contact, non-invasive method of sorting CMOS chips |
| 01/26/2000 | CN1242597A Device structure with layer for facilitating passivation of surface states |
| 01/26/2000 | CN1242511A System and method for optically measuring dielectric thickness in semiconductor devices |
| 01/25/2000 | USRE36531 Semiconductor memory device including memory cells connected to a ground line |
| 01/25/2000 | US6018815 Adaptable scan chains for debugging and manufacturing test purposes |
| 01/25/2000 | US6018492 Semiconductor memory device |
| 01/25/2000 | US6018491 Synchronous dynamic random access memory |
| 01/25/2000 | US6018484 Method and apparatus for testing random access memory devices |
| 01/25/2000 | US6018480 Method and system which permits logic signal routing over on-chip memories |
| 01/25/2000 | US6018475 MOS memory point |
| 01/25/2000 | US6018365 Imaging system and method for increasing the dynamic range of an array of active pixel sensor cells |
| 01/25/2000 | US6018272 Linearization of resistance |
| 01/25/2000 | US6018252 Dual-power type integrated circuit |
| 01/25/2000 | US6018195 MOS gate structure semiconductor device |
| 01/25/2000 | US6018187 Elevated pin diode active pixel sensor including a unique interconnection structure |
| 01/25/2000 | US6018185 Semiconductor device with element isolation film |
| 01/25/2000 | US6018183 Structure of manufacturing an electrostatic discharge protective circuit for SRAM |
| 01/25/2000 | US6018178 Fabrication process for a novel multi-storage EEPROM cell |
| 01/25/2000 | US6018177 DRAM cell and array to store two-bit data |
| 01/25/2000 | US6018176 Vertical transistor and memory cell |
| 01/25/2000 | US6018174 Bottle-shaped trench capacitor with epi buried layer |
| 01/25/2000 | US6018172 Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regions |
| 01/25/2000 | US6018171 Shallow junction ferroelectric memory cell having a laterally extending p-n junction and method of making the same |
| 01/25/2000 | US6018170 Single-layer-electrode type two-phase charge coupled device having smooth charge transfer |
| 01/25/2000 | US6018169 Photodetectors |
| 01/25/2000 | US6018168 Semiconductor memory devices having alternating word line reverse diodes and well bias tapping regions |
| 01/25/2000 | US6017797 Method of fabricating a semiconductor device including complementary MOSFET and power MOSFET |
| 01/25/2000 | US6017795 Method of fabricating buried source to shrink cell dimension and increase coupling ratio in split-gate flash |
| 01/25/2000 | US6017794 Depositing and patterning lower metallization layer of chromium and dielectric layer; depositing chromium caps over source and drain regions; patterning and etching trenches; filling trenches with dielectric layer; depositing metal |
| 01/25/2000 | US6017793 Method of forming a memory cell of a nonvolatile semiconductor memory device |
| 01/25/2000 | US6017790 Forming dielectric layer over substrate having memory circuit and logic circuit regions; patterning, forming conductive layer and refractory metal oxide layer and masking; hydrogen treating; removing mask and repeating |
| 01/25/2000 | US6017789 Method of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a b. Ta.su2 O5 dielectric layer with amorphous diffusion barrier layer |
| 01/25/2000 | US6017787 Integrated circuit with twin tub |
| 01/25/2000 | US6017785 Method for improving latch-up immunity and interwell isolation in a semiconductor device |
| 01/25/2000 | US6017781 Forming gate dielectric film to cover gate electrode on dielectric film; forming polysilicon film; doping silicon or nitrogen into polysilicon film; heat treating to convert amorphous silicon into polysilicon |
| 01/25/2000 | US6017778 Method for making power integrated circuit |
| 01/25/2000 | US6017775 Process for manufacturing a sensor with a metal electrode in a metal oxide semiconductor (MOS) structure |
| 01/20/2000 | WO2000003429A1 Thin-layered semiconductor structure comprising a heat distribution layer |
| 01/20/2000 | WO2000003395A1 Ferroelectric ram arrangement |
| 01/20/2000 | WO2000003378A1 Electroluminescent display with independently adressable picture elements |
| 01/20/2000 | WO2000003291A1 Methods for achieving improved color in microencapsulated electrophoretic devices |
| 01/20/2000 | WO2000002434A1 Solid-state imaging device |
| 01/20/2000 | WO1999048156A3 Radiation-sensitive semiconductor device and method of manufacturing same |
| 01/20/2000 | DE19931149A1 Optical semiconductor device, especially an optoelectronic integrated circuit for wideband optical communications, comprises a zinc oxide film between a gallium arsenide substrate and a gallium nitride-based light emitting-receiving layer |
| 01/20/2000 | DE19928280A1 Ferroelectric memory device, especially a ferroelectric RAM for modern data processing systems, is produced by forming a capacitor with a multilayer ferroelectric layer of titanate content exceeding its zirconate content |
| 01/20/2000 | DE19903208A1 Fused semiconductor device e.g. semiconductor memory with redundant memory cells has silicon oxide layer on either side of metal fuse for preventing fuse corrosion |
| 01/20/2000 | DE19832151A1 Tansceivermodul Tansceivermodul |
| 01/20/2000 | CA2336915A1 Electroluminescent display with independently adressable picture elements |
| 01/20/2000 | CA2336596A1 Methods for achieving improved color in microencapsulated electrophoretic devices |
| 01/19/2000 | EP0973260A1 Low switching noise logic circuit |
| 01/19/2000 | EP0973204A2 MOS-Transistor with enhanced withstanding voltage and reduced on-resistance |
| 01/19/2000 | EP0973202A2 Transceiver module |
| 01/19/2000 | EP0973201A1 Stacked capacitor and method of making the same |
| 01/19/2000 | EP0973200A1 Reference voltage supply circuit |
| 01/19/2000 | EP0973194A1 Semiconductor device and manufacturing method thereof |
| 01/19/2000 | EP0973019A1 Multi-array sensor and method of identifying events using the same |
| 01/19/2000 | EP0972309A4 Barrier layer for ferroelectric capacitor integrated on silicon |
| 01/19/2000 | EP0972309A1 Barrier layer for ferroelectric capacitor integrated on silicon |
| 01/19/2000 | EP0972308A1 Interconnect design with controlled inductance |
| 01/19/2000 | EP0972305A1 Process for fabricating a diffused emitter bipolar transistor |
| 01/19/2000 | EP0972304A1 Method for obtaining a thin film, in particular semiconductor, comprising a protected ion zone and involving an ion implantation |
| 01/19/2000 | EP0972301A1 Manufacturing a heterobipolar transistor and a laser diode on the same substrate |
| 01/19/2000 | EP0972293A1 Electrode structure and method of making for ferroelectric capacitor integrated on silicon |
| 01/19/2000 | EP0972287A1 High-efficiency miniature magnetic integrated circuit structures |
| 01/19/2000 | EP0972284A1 Electric or electronic component and application as non volatile memory and device with surface acoustic waves |
| 01/19/2000 | EP0931379A4 Triple well charge pump |
| 01/19/2000 | EP0836232A4 Tunnelling device and method of producing a tunnelling device |
| 01/19/2000 | EP0708980B1 Method of fabricating an electronic device on a silicon on insulator wafer |
| 01/19/2000 | CN1242106A Bump-bonded semiconductor imaging device |
| 01/19/2000 | CN1242093A Light detection device |
| 01/19/2000 | CN1241817A Semiconductor memory and manufacturing method thereof |
| 01/19/2000 | CN1241816A MIS semiconductor device and method of fabricating the same |