Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
12/2000
12/26/2000US6166425 Semiconductor device having a resistance element with a reduced area
12/26/2000US6166423 Integrated circuit having a via and a capacitor
12/26/2000US6166420 Method and structure of high and low K buried oxide for SoI technology
12/26/2000US6166419 Semiconductor memory device
12/26/2000US6166416 CMOS analog semiconductor apparatus and fabrication method thereof
12/26/2000US6166414 Electronic circuit
12/26/2000US6166413 Semiconductor device having field effect transistors different in thickness of gate electrodes and process of fabrication thereof
12/26/2000US6166412 SOI device with double gate and method for fabricating the same
12/26/2000US6166410 MONOS flash memory for multi-level logic and method thereof
12/26/2000US6166408 Hexagonally symmetric integrated circuit cell
12/26/2000US6166406 Precharge circuit and semiconductor storage device
12/26/2000US6166405 Solid-state imaging device
12/26/2000US6166404 Semiconductor device in which at least two field effect transistors having different threshold voltages are formed on a common base
12/26/2000US6166403 Integrated circuit having embedded memory with electromagnetic shield
12/26/2000US6166400 Thin film transistor of liquid crystal display with amorphous silicon active layer and amorphous diamond ohmic contact layers
12/26/2000US6166397 Display device with inverted type transistors in the peripheral and pixel portions
12/26/2000US6166396 Semiconductor devices
12/26/2000US6166369 Microcollector for photosensitive devices using sol-gel
12/26/2000US6165908 Single-layer-electrode type charge coupled device having double conductive layers for charge transfer electrodes
12/26/2000US6165873 Process for manufacturing a semiconductor integrated circuit device
12/26/2000US6165864 Tapered electrode for stacked capacitors
12/26/2000US6165863 Aluminum-filled self-aligned trench for stacked capacitor structure and methods
12/26/2000US6165861 Integrated circuit polysilicon resistor having a silicide extension to achieve 100% metal shielding from hydrogen intrusion
12/26/2000US6165847 Nonvolatile semiconductor memory device and method for manufacturing the same
12/26/2000US6165846 Method of eliminating gate leakage in nitrogen annealed oxides
12/26/2000US6165842 Method for fabricating a non-volatile memory device using nano-crystal dots
12/26/2000US6165841 Dry etching a doped amorphous silicon layer using a lower electrode layer pattern; fluorinating the silicon while suppressing oxide formation; hydrogenation to replace the fluorine; desorbing hydrogen to expose bonds for nucleation
12/26/2000US6165840 Method for fabricating a DRAM cell capacitor including forming first multilayer insulator, forming conductive plug, forming second insulator, and etching second and first insulators to form the storage node
12/26/2000US6165839 Process to fabricate a cylindrical, capacitor structure under a bit line structure for a dynamic random access memory cell
12/26/2000US6165837 Semiconductor integrated memory manufacturing method and device
12/26/2000US6165836 Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
12/26/2000US6165835 Method for producing a silicon capacitor
12/26/2000US6165834 Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell
12/26/2000US6165833 Semiconductor processing method of forming a capacitor
12/26/2000US6165828 Structure and method for gated lateral bipolar transistors
12/26/2000US6165825 Semiconductor device and method for producing the same
12/26/2000US6165813 Replacing semiconductor chips in a full-width chip array
12/26/2000US6165803 Magnetic random access memory and fabricating method thereof
12/26/2000US6165802 Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation
12/26/2000US6165801 Method for making a monolithic integrated high-Tc superconductor-semiconductor structure
12/26/2000US6165692 Method for manufacturing a semiconductor device and an exposure mask used therefor
12/26/2000US6165622 Ferroelectric thin film, substrate provided with ferroelectric thin film, device having capacitor structure and method for manufacturing ferroelectric thin film
12/26/2000US6165587 Microbridge structure with reinforcement section
12/26/2000US6165556 High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
12/26/2000US6165543 Arranging organic electroluminescent transfer base plate obtained by depositing luminescent organic compound on heat resistant base film and transparent substrate provided with transparent electrode, transferring compound by sublimation
12/22/2000CA2311069A1 Reference voltage generator with monitoring and start up means
12/21/2000WO2000077861A1 Stacked wavelength-selective opto-electronic device
12/21/2000WO2000077857A1 Ferroelectric transistor and method of producing same
12/21/2000WO2000077855A1 Ferroelectric field effect transistor, memory utilizing same, and method of operating same
12/21/2000WO2000077849A1 Method for implementing resistance, capacitance and/or inductance in an integrated circuit
12/21/2000WO2000077841A1 Method for producing a semiconductor memory component
12/21/2000WO2000077836A1 Method and apparatus for tuning the impedance of integrated semiconductor devices
12/21/2000WO2000077832A2 Metal oxide thin films for high dielectric constant applications
12/21/2000WO2000077828A2 Method of manufacturing a variable work function gate mosfet using a dummy gate
12/21/2000WO2000051167A3 Monolithically integrated trench mosfet and schottky diode
12/21/2000DE19926767A1 Ferroelektrischer Transistor und Verfahren zu dessen Herstellung Ferroelectric transistor and method of producing the
12/21/2000DE19926501A1 Verfahren zur Herstellung eines Halbleiterspeicherbauelements A method of manufacturing a semiconductor memory device
12/21/2000DE10021346A1 Semiconducting component has HF distortion correction device that recovers lost HF components of input data depending on restoration clock signals, outputs recovered input data
12/20/2000EP1061592A2 Magneto-resistance effect element, and its use as memory element
12/20/2000EP1061589A2 Method of fabricating thin-film photovoltaic module
12/20/2000EP1061583A1 Semiconductor integrated circuit device and apparatus for producing the layout thereof
12/20/2000EP1061582A2 Capacitor and method of fabricating the same
12/20/2000EP1061581A1 Protection and filtering circuit
12/20/2000EP1061580A2 Method and circuit for minimizing the charging effect during manufacture of semiconductor devices
12/20/2000EP1061577A2 High frequency multi-layered circuit component
12/20/2000EP1061573A2 Semiconductor device and method of manufacturing the same
12/20/2000EP1061572A1 Intergrated stucture for radio frequency applications
12/20/2000EP1061448A1 Semiconductor memory device with built-in self test and built-in self repair
12/20/2000EP1060574A2 A differential line driver
12/20/2000EP1060523A2 Photodetector and use of the same
12/20/2000EP1060522A1 Display devices
12/20/2000EP1060519A1 Mos transistor memory cell and method for producing the same
12/20/2000EP1060518A1 Trench-gate mos transistor, its use in an eeprom device and process for manufacturing the same
12/20/2000EP1060516A1 Display devices
12/20/2000EP1060515A1 Electrically programmable memory cell arrangement and method for producing the same
12/20/2000EP1060514A1 Field isolated integrated injection logic gate
12/20/2000EP1060512A1 Vertically integrated circuit system
12/20/2000EP1060510A1 Method of forming dual field isolation structures
12/20/2000EP1060503A2 Ultra-small capacitor array
12/20/2000EP1060474A2 Memory cell arrangement and method for producing the same
12/20/2000EP1060414A1 Semiconductor imaging device
12/20/2000CN1277724A A read-only memory and read-only memory device
12/20/2000CN1277723A A read-only memory and read-only memory devices
12/20/2000CN1277519A Solid camera and its driving method in application at two kinds of field/frame period
12/20/2000CN1277460A Nonvolatile semi-conductor storage and its producing method
12/19/2000USRE36993 Dynamic random access memory device with the combined open/folded bit-line pair arrangement
12/19/2000US6163875 Semiconductor testing equipment
12/19/2000US6163862 On-chip test circuit for evaluating an on-chip signal using an external test signal
12/19/2000US6163689 Negative self-bias circuit for FET mixers
12/19/2000US6163499 Programmable impedance output buffer drivers, semiconductor devices and static random access memories provided with a programmable impedance output port
12/19/2000US6163493 Semiconductor integrated circuit device with large internal bus width, including memory and logic circuit
12/19/2000US6163481 Flash memory wordline tracking across whole chip
12/19/2000US6163477 MRAM device using magnetic field bias to improve reproducibility of memory cell switching
12/19/2000US6163476 Static-random-access-memory cell
12/19/2000US6163475 Bit line cross-over layout arrangement
12/19/2000US6163446 Protective circuit
12/19/2000US6163400 Variable magnification optical system and image pickup apparatus using the same
12/19/2000US6163386 Photoelectric conversion device and driving method therefor
12/19/2000US6163234 Micromagnetic device for data transmission applications and method of manufacture therefor
12/19/2000US6163171 Pull-up and pull-down circuit
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