Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/2012
09/20/2012US20120235275 On-chip electronic device and method for manufacturing the same
09/20/2012US20120235274 Semiconductor structure having an integrated double-wall capacitor for embedded dynamic random access memory (edram) and method to form the same
09/20/2012US20120235261 Device-mounted substrate, infrared light sensor and through electrode forming method
09/20/2012US20120235255 MEMS acoustic pressure sensor device and method for making same
09/20/2012US20120235254 Method of forming a die having an ic region adjacent a mems region
09/20/2012US20120235252 Manufacturing method for an encapsulated micromechanical component, corresponding micromechanical component, and encapsulation for a micromechanical component
09/20/2012US20120235250 Semiconductor device and a method of manufacturing the same
09/20/2012US20120235249 Reducing defect rate during deposition of a channel semiconductor alloy into an in situ recessed active region
09/20/2012US20120235247 Fin field effect transistor with variable channel thickness for threshold voltage tuning
09/20/2012US20120235245 Superior integrity of high-k metal gate stacks by reducing sti divots by depositing a fill material after sti formation
09/20/2012US20120235244 Semiconductor Structure and Method for Manufacturing the Same
09/20/2012US20120235243 Method of forming a gate pattern and a semiconductor device
09/20/2012US20120235242 Control of Local Environment for Polysilicon Conductors in Integrated Circuits
09/20/2012US20120235240 High density six transistor finfet sram cell layout
09/20/2012US20120235239 Hybrid mosfet structure having drain side schottky junction
09/20/2012US20120235238 Fully-depleted son
09/20/2012US20120235236 Structure and method of forming a transistor with asymmetric channel and source/drain regions
09/20/2012US20120235234 Fin fet device with independent control gate
09/20/2012US20120235233 Field effect transistor structure and method of forming same
09/20/2012US20120235230 Mosfet device with thick trench bottom oxide
09/20/2012US20120235229 Inter-poly dielectric in a shielded gate mosfet device
09/20/2012US20120235228 Transistor structure and method for preparing the same
09/20/2012US20120235223 Nonvolatile semiconductor memory
09/20/2012US20120235222 Nonvolatile semiconductor memory device and method for manufacturing the same
09/20/2012US20120235221 Semiconductor device and method for manufacturing same
09/20/2012US20120235218 Semiconductor device and method of manufacturing the same
09/20/2012US20120235215 Performance enhancement in transistors by reducing the recessing of active regions and removing spacers
09/20/2012US20120235214 Locally 2 sided chc dram access transistor structure
09/20/2012US20120235213 Semiconductor structure with a stressed layer in the channel and method for forming the same
09/20/2012US20120235211 Cross-Point Memory Structures
09/20/2012US20120235210 Semiconductor device, manufacturing method and transistor circuit
09/20/2012US20120235208 Semiconductor Mismatch Reduction
09/20/2012US20120235179 Measuring Method, Inspection Method, Inspection Device, Semiconductor Device, Method of Manufacturing a Semiconductor Device, and Method of Manufacturing an Element Substrate
09/20/2012US20120235165 Semiconductor device and method for manufacturing same
09/20/2012US20120235154 Semiconductor Device
09/20/2012US20120235153 Semiconductor Device and Method of Manufacturing the Same
09/20/2012US20120235152 Semiconductor device and method for manufacturing the same
09/20/2012US20120235151 Horizontal polysilicon-germanium heterojunction bipolar transistor
09/20/2012US20120235145 Printed Material Constrained By Well Structures And Devices Including Same
09/20/2012US20120235143 Vertical polysilicon-germanium heterojunction bipolar transistor
09/20/2012US20120235142 Semiconductor light emitting diode chip, method of manufacturing thereof and method for quality control thereof
09/20/2012US20120235138 Mask level reduction for mofet
09/20/2012US20120235137 Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
09/20/2012US20120235118 Nitride gate dielectric for graphene mosfet
09/20/2012US20120235115 Growth of iii-v led stacks using nano masks
09/20/2012US20120235112 Resistive switching memory and method for manufacturing the same
09/20/2012US20120235109 Non-volatile semiconductor storage device and manufacturing method of non-volatile semiconductor storage device
09/20/2012US20120235106 Methods of forming at least one conductive element, methods of forming a semiconductor structure, methods of forming a memory cell and related semiconductor structures
09/20/2012US20120235081 Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process
09/20/2012US20120234922 Solar powered rfid tags and method of manufacture therefore
09/20/2012US20120234887 Substrate cleaving under controlled stress conditions
09/20/2012US20120234688 Method for Electrochemical Fabrication
09/20/2012US20120234579 Method for contacting a chip
09/20/2012US20120234361 Non-Chemical, Non-Optical Edge Bead Removal Process
09/20/2012US20120234243 Method and apparatus utilizing a single lift mechanism for processing and transfer of substrates
09/20/2012DE112010004811T5 Verfahren zur Herstellung eines Silizium-Epitaxiewafers A process for producing a silicon epitaxial wafer
09/20/2012DE112010001555T5 GaN-HEMT vom Anreicherungstyp und Verfahren zu seiner Herstellung GaN-HEMT of the enhancement type and process for its preparation
09/20/2012DE112010001476T5 Verfahren zur Herstellung eines Siliciumcarbidhalbleiterbauteils A method for producing a Siliciumcarbidhalbleiterbauteils
09/20/2012DE112010000924T5 Vakuumheizvorrichtung und Vakuumwärmebehandlungsverfahren Vakuumheizvorrichtung and vacuum heat treatment process
09/20/2012DE112009004805T5 Halbleitervorrichtung Semiconductor device
09/20/2012DE112009004562T5 Halbleiterstückverbindungsüberwachungssystem und -verfahren Semiconductor piece connection monitoring system and method
09/20/2012DE102012204085A1 Halbleitervorrichtung und Verfahren zum Herstellen dieser A semiconductor device and method for producing these
09/20/2012DE102012200863A1 Halbleitervorrichtung mit Grundplatte Semiconductor device with base plate
09/20/2012DE102012100982A1 Vorrichtung zum lösbaren Aufnehmen eines Halbleiterchips Device for releasably receiving a semiconductor chip
09/20/2012DE102012005296A1 Verpacken für fingerabdrucksensoren und verfahren einer herstellung Packaging for fingerprint sensors and process of manufacture
09/20/2012DE102012004084A1 Interpolydielektrikum in einer Abschirm-Gate-MOSFET-Vorrichtung Interpoly in a shielding gate MOSFET device
09/20/2012DE102011118291A1 Halbleitervorrichtung und verfahren zur herstellung A semiconductor device and method for producing
09/20/2012DE102011014311A1 Introducing a process gas into a process space of a process chamber, by warming a process chamber, a substrate received in the process chamber and/or a process chamber-heating device, and heating inlet tube over the process chamber
09/20/2012DE102011013821A1 Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips A process for producing at least one optoelectronic semiconductor chip
09/20/2012DE102011005760A1 Preparing and treating an optically scattering transparent conducting oxide layer, comprises depositing the oxide layer on a substrate by moving the substrate in a coating system to a coating source, and coating the substrate
09/20/2012DE102011005719A1 Erhöhte Integrität von Metallgatestapeln mit großem ε durch Reduzieren von STI-Absenkungen durch Abscheiden eines Füllmaterials nach der STI-Herstellung Increased integrity of metal gate stacks with large ε by reducing STI reductions by depositing a filling material after STI-production
09/20/2012DE102011005718A1 Verfahren zum Verringern der Äquivalenzdicke von Dielektriika mit großem ε in Feldeffekttranistoren durch Ausführen eines Ausheizprozesses bei geringer Temperatur A method for reducing the equivalent thickness of Dielektriika with large ε in Feldeffekttranistoren by performing an anneal at low temperature
09/20/2012DE102011005642A1 Verfahren zum Schutz von reaktiven Metalloberflächen von Halbleiterbauelementen während des Transports durch Bereitstellen einer zusätzlichen Schutzschicht A method for the protection of reactive metal surfaces of semiconductor devices during transport by providing an additional protective layer
09/20/2012DE102011005641A1 Leistungssteigerung in Transistoren durch Reduzierung der Absenkung aktiver Gebiete und durch Entfernen von Abstandshaltern Performance increase in transistors by reducing the reduction of active regions and by removing spacers
09/20/2012DE102011005639A1 Reduzieren der Defektrate während des Abscheidens einer Kanalhalbleiterlegierung in ein in-situ-abgesenktes aktives Gebiet Reducing the defect rate during the deposition of a semiconductor alloy channel in an in-situ active region Lowered
09/20/2012DE102011005557A1 Operating a vacuum coating system for producing thin film solar cells, comprises purifying a coating chamber using a cleaning gas, and depositing a diffusion barrier layer comprising amorphous silicon carbide on coating chamber walls
09/20/2012DE102009049704B4 Vorrichtung zur Prüfung der Isolationseigenschaften einer Photovoltaikmodulplatte, Prüfmittel sowie Verfahren zur Prüfung Apparatus for testing the insulation properties of a photovoltaic module plate, test equipment and procedures for the
09/20/2012DE102009047308B4 Verfahren zum Verringern des Reihenwiderstands in komplexen Transistoren durch zuverlässiges Einbetten von Metallsilizidkontakten in hochdotiertes Halbleitermaterial bei der Herstellung A method for reducing the series resistance in complex transistors by reliable embedding Metallsilizidkontakten in highly doped semiconductor material in the production
09/20/2012DE102008059501B4 Technik zur Verbesserung des Dotierstoffprofils und der Kanalleitfähigkeit durch Millisekunden-Ausheizprozesse Technique for improving the dopant and the channel conductance by millisecond anneal
09/20/2012DE102007052051B4 Herstellung verspannungsinduzierender Schichten über einem Bauteilgebiet mit dichtliegenden Transistorelementen Production verspannungsinduzierender layers over a component area with closely spaced transistor elements
09/20/2012DE102006062397B4 Halbleiterbauelement mit MOS-Bauelementen und Herstellungsverfahren A semiconductor device comprising MOS devices and manufacturing processes
09/20/2012DE102006024228B4 Flüssigkristalldisplay und Verfahren zu dessen Herstellung Liquid crystal display and method for its production
09/19/2012EP2500947A1 Semiconductor device and process for manufacturing same
09/19/2012EP2500941A2 Semiconductor device and manufacturing method thereof
09/19/2012EP2500933A1 Multi-layer structures and process for fabricating semiconductor devices
09/19/2012EP2500932A1 Adhesive composition
09/19/2012EP2500931A1 Semiconductor device and method for manufacturing semiconductor device
09/19/2012EP2500930A1 Etching liquid for etching silicon substrate rear surface in through silicon via process and method for manufacturing semiconductor chip having through silicon via using the etching liquid
09/19/2012EP2500929A1 Slurry for chemical mechanical polishing and polishing method for substrate using same
09/19/2012EP2500928A1 Chemical-mechanical polishing liquid, and semiconductor substrate manufacturing method and polishing method using said polishing liquid
09/19/2012EP2500927A2 Method for depositing a metal coating on a semiconductor element and semiconductor element
09/19/2012EP2500757A1 Method of manufacturing optical module
09/19/2012EP2500451A1 Method for producing laminate
09/19/2012EP2499681A1 Megasonic multifrequency apparatus with matched transducers and mounting plate
09/19/2012EP2499672A2 Punch-through semiconductor device and method for producing same
09/19/2012EP2499666A2 System and method for handling multiple workpieces for matrix configuration processing
09/19/2012EP2499665A1 Electric device and method of bonding chip to external electric circuit
09/19/2012EP2499664A2 Process for anisotropic etching of semiconductors
09/19/2012EP2499663A2 Etching process for semiconductors
09/19/2012EP2499662A1 Protection and surface modification of carbon nanostructures