Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/2012
09/19/2012CN102683248A Laser lift-off device
09/19/2012CN102683247A Plasma etching apparatus and plasma etching method
09/19/2012CN102683246A Lid opening and closing device
09/19/2012CN102683245A Liquid processing apparatus and liquid processing method
09/19/2012CN102683244A Method of manufacturing film for semiconductor device
09/19/2012CN102683243A Substrate processing apparatus and substrate processing method
09/19/2012CN102683242A Rotary lamination apparatus
09/19/2012CN102683241A Mounting device
09/19/2012CN102683240A Method for evaluating performance of deposited film
09/19/2012CN102683239A Lifting inspection bench for photovoltaic components
09/19/2012CN102683238A Method for improving line width measurement accuracy alignment of picture
09/19/2012CN102683237A Adaptive endpoint method for pad life effect on chemical mechanical polishing
09/19/2012CN102683236A Hot pressing head comprising multiple groups of heating cores
09/19/2012CN102683235A Assembling device and assembling method for fpd assembly
09/19/2012CN102683234A Manufacturing method of semiconductor device
09/19/2012CN102683233A Die bonder
09/19/2012CN102683232A Semi-conductor packaging die and semi-conductor packaging process
09/19/2012CN102683231A Preparation method of high-refractive-index scattering film and application
09/19/2012CN102683230A Quad flat no-lead multi-circle-arranged integrated circuit (IC) chip packaging part and production method thereof
09/19/2012CN102683229A Packaging technology of video card packaging production line
09/19/2012CN102683228A Thermal enhanced package
09/19/2012CN102683227A Cooling fan and packaging method of electronic assembly of cooling fan
09/19/2012CN102683226A Wafer level package structure and manufacturing method thereof
09/19/2012CN102683225A Electronic component installing device and electronic component installing method
09/19/2012CN102683224A Method for preparing double-layer isolation mixed crystal orientation strain silicon nanowire complementary metal oxide semiconductor (CMOS)
09/19/2012CN102683223A Manufacturing method of semiconductor device, and semiconductor device
09/19/2012CN102683222A Method for packaging semiconductor pipe cores with cover cap components
09/19/2012CN102683221A Semiconductor device and assembly method of semiconductor device
09/19/2012CN102683220A Method for making multi-layer organic liquid crystal polymer (LCP) substrate structure
09/19/2012CN102683219A Surface processing layer structure and producing method thereof
09/19/2012CN102683218A Method for improving compiling speed of silicon-oxide-nitride-oxide-silicon (SONOS) structure device by using stress technology
09/19/2012CN102683217A Preparation method of graphite-based double-gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor)
09/19/2012CN102683216A Method for raising breakdown voltage
09/19/2012CN102683215A Method for preparing strained silicon nanowire N-channel metal oxide semiconductor field effect transistor (NMOSFET)
09/19/2012CN102683214A Method for preparing strained silicon nanowire N-channel metal oxide semiconductor field effect transistor (NMOSFET)
09/19/2012CN102683213A Preparation method of double-layer isolation mixed crystal backward gate type inverse model nanowire field effect transistor (SiNWFET) on silicon on insulator (SOI)
09/19/2012CN102683212A Preparation method of strained silicon nanowire power metal oxide semiconductor field effect transistor (PMOSFET)
09/19/2012CN102683211A A method of a dram memory with a two-sided transistor and a two-sided transistor structure
09/19/2012CN102683210A Semiconductor structure and manufacturing method thereof
09/19/2012CN102683209A Semiconductor device and manufacturing method thereof
09/19/2012CN102683208A Preparation method of yttrium aluminum oxygen composite oxide high K medium thin film transistor
09/19/2012CN102683207A Method for manufacturing MOS (metal oxide semiconductor) transistor and MOS transistor device
09/19/2012CN102683206A Preparation method for strain silicon nanowire P-channel metal oxide semiconductor field effect transistor (PMOSFET)
09/19/2012CN102683205A Method for manufacturing semiconductor built-in stress nanowire and semiconductor device
09/19/2012CN102683204A Preparation method of strained silicon nanowire N-channel metal oxide semiconductor field effect transistor (NMOSFET)
09/19/2012CN102683203A Method for manufacturing built-in stress nanowire
09/19/2012CN102683202A Method for manufacturing built-in stress nanowire and semiconductor
09/19/2012CN102683201A Method for manufacturing low-voltage superhigh-current rectifying tube
09/19/2012CN102683200A Method for treating a semiconductor structure on an insulator
09/19/2012CN102683199A Silicon carbide film making method and metal barrier layer making method
09/19/2012CN102683198A Etching method, method for manufacturing semiconductor device, and etching device
09/19/2012CN102683197A Method of manufacturing semiconductor device
09/19/2012CN102683196A Etching method, etching apparatus, and computer-readable recording medium
09/19/2012CN102683195A Semiconductor manufacturing apparatus, method of manufacturing semiconductor device, and method of manufacturing electronic device
09/19/2012CN102683194A Preparation method of mix-mode MOS (Metal Oxide Semiconductor) transistor device with PIP (polysilicon-insulator-ploysilicon) capacitor
09/19/2012CN102683193A Manufacturing method of transistor, transistor, array substrate and display device
09/19/2012CN102683192A Fin-transistor formed on a patterned sti region by late fin etch
09/19/2012CN102683191A Method forming gate pattern and semiconductor device
09/19/2012CN102683190A Forming method of metal gate and MOS (Metal Oxide Semiconductor) transistor
09/19/2012CN102683189A Forming method of metal gate and MOS (Metal Oxide Semiconductor) transistor
09/19/2012CN102683188A Method for improving writing redundancy of SRAM (static random access memory)
09/19/2012CN102683187A Transverse double-diffusion MOS (metal oxide semiconductor) device and manufacturing method thereof
09/19/2012CN102683186A Method for inhibiting hot carrier injection and manufacture method of BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) device
09/19/2012CN102683185A Method for reducing polysilicon gate depletion in carbon co-implantation technological process
09/19/2012CN102683184A Manufacture method of ion implantation barrier layer
09/19/2012CN102683183A Preparation method of graphene nanobelt injecting Si to SiC based on Ni film annealing
09/19/2012CN102683182A Systems and methods providing electron beam writing to a medium
09/19/2012CN102683181A Method for improving photoetching registration accuracy in germanium silicon technology
09/19/2012CN102683180A Channel etching method and semiconductor device manufacturing method
09/19/2012CN102683179A Method for preparing ultra-thin silicon wafer based on SLiM-Cut (Stress induced Lift-off Method-Cut) technology
09/19/2012CN102683178A Semiconductor-on-insulator and preparation method thereof
09/19/2012CN102683177A Method for manufacturing semiconductor built-in stress nanowire
09/19/2012CN102683176A Method for improving metal-insulator-metal capacitor reliability and process structure thereof
09/19/2012CN102683175A Method for improving dielectric quality of metal-insulator-metal capacitor
09/19/2012CN102683174A Method for improving metal-insulator-metal capacitor dielectric substance quality
09/19/2012CN102683173A Method for reducing wafer arc discharge, and manufacturing method of integrated circuit
09/19/2012CN102683172A Semiconductor device manufacturing method
09/19/2012CN102683171A Method for producing an oxide layer on a semiconductor element
09/19/2012CN102683170A Multi-layer structures and process for fabricating semiconductor devices
09/19/2012CN102683169A Semiconductor mismatch reduction
09/19/2012CN102683168A Method for preparing magnetic germanium quantum dots
09/19/2012CN102683167A Method for preparing X-ray diffractive optical element with high aspect ratio based on nanometer island substrate
09/19/2012CN102683166A Packaged-chip detecting and classifying device
09/19/2012CN102683165A Intelligent defect screening and sampling method
09/19/2012CN102683164A Method and device for monitoring abnormality of ion implanter
09/19/2012CN102682326A Signal transmission device, electronic device, and signal transmission method
09/19/2012CN102681370A Photo-etching overlay method and method for improving breakdown stability of laterally diffused metal oxide semiconductor (LDMOS)
09/19/2012CN102681368A Pattern formation method, pattern formation device, and device fabrication method
09/19/2012CN102681356A Local exposure method and local exposure device
09/19/2012CN102681338A Resist pattern improving material, method for forming resist pattern, method for producing semiconductor device, and semiconductor device
09/19/2012CN102681279A Substrate for manufacturing procedure of array of panel display device, manufacturing method and corresponding liquid crystal display panel
09/19/2012CN102681278A Array substrate, manufacture method thereof, display panel and display device
09/19/2012CN102681277A Array substrate, method for manufacturing same and liquid crystal display panel
09/19/2012CN102681276A Array substrate, method for manufacturing same and display device comprising same
09/19/2012CN102681274A Liquid crystal display array substrate and manufacturing method thereof
09/19/2012CN102681245A Transflective liquid crystal display array substrate and manufacturing method thereof, and display device
09/19/2012CN102677139A Configuration and method of operation of an electrodeposition system for improved process stability and performance
09/19/2012CN102677021A Film formation method and film formation apparatus
09/19/2012CN102676105A High thermal conductivity membrane adhesive, adhesive composition and semiconductor package using the adhesive and manufacturing method thereof
09/19/2012CN102676104A Die attach composition for silicon chip placement on a flat substrate having improved thixotropic properties