| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
|---|
| 04/29/1992 | EP0482880A2 A read-only memory |
| 04/29/1992 | EP0482878A2 Liquid source bubbler |
| 04/29/1992 | EP0482877A1 Heated fluid supply line |
| 04/29/1992 | EP0482829A1 Method for forming a composite oxide over a heavily doped region |
| 04/29/1992 | EP0482697A2 Operational analysis device of the scan path type having a single scanning clock and a single output phase for an integrated circuit |
| 04/29/1992 | EP0482591A1 U-trench element isolation region of a semiconductor device |
| 04/29/1992 | EP0482556A1 Polysilicon resistance element and semiconductor device using the same |
| 04/29/1992 | EP0482553A2 Measuring device for x,y, gamma alignment tables |
| 04/29/1992 | EP0482541A1 Large area cathodic device with equalized consumption |
| 04/29/1992 | EP0482537A2 Chemically stabilized cristobalite |
| 04/29/1992 | EP0482519A1 Method of etching oxide materials |
| 04/29/1992 | EP0482431A1 Electronic substrate multiple location conductor attachment technology |
| 04/29/1992 | EP0482265A1 Method of forming a thin copper film by low temperature CVD |
| 04/29/1992 | EP0482247A1 Method for producing an integrated circuit structure with a dense multilayer metallization pattern |
| 04/29/1992 | EP0482232A1 Process for manufacturing a doped polycide layer on a semiconductor substrate |
| 04/29/1992 | EP0482212A1 Silicon single crystal manufacturing apparatus |
| 04/29/1992 | EP0482051A1 Laser machining. |
| 04/29/1992 | EP0481998A1 Uv-cured adhesive for semiconductor-chip assembly. |
| 04/29/1992 | EP0406373A4 Tape automated bonded lead package and reusable transport tape for use therewith |
| 04/29/1992 | CN1016449B Process for formation of functional deposited film containing groups ii and vi atoms as main constituent atoms by microwave plasma chemicul vapor deposition process |
| 04/28/1992 | US5109361 Electrically page erasable and programmable read only memory |
| 04/28/1992 | US5109267 Method for producing an integrated circuit structure with a dense multilayer metallization pattern |
| 04/28/1992 | US5109266 Semiconductor integrated circuit device having high breakdown-voltage to applied voltage |
| 04/28/1992 | US5109264 Semiconductor wafers having a shape suitable for thermal treatment |
| 04/28/1992 | US5109263 Semiconductor device with optimal distance between emitter and trench isolation |
| 04/28/1992 | US5109262 Bipolar transistor with reduced collector resistance |
| 04/28/1992 | US5109260 Silicon thin film transistor and method for producing the same |
| 04/28/1992 | US5109258 Memory cell made by selective oxidation of polysilicon |
| 04/28/1992 | US5109256 Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication |
| 04/28/1992 | US5109149 Laser, direct-write integrated circuit production system |
| 04/28/1992 | US5108955 Method of making a resin encapsulated pin grid array with integral heatsink |
| 04/28/1992 | US5108954 Implanting germanium restrict diffusion of dopant during ammealing |
| 04/28/1992 | US5108953 Method for fabricating a semiconductive device comprising a refractory metal silicide thin film |
| 04/28/1992 | US5108952 Method of depositing a tungsten film |
| 04/28/1992 | US5108951 Depositing aluminum while integrated circuit is being heated |
| 04/28/1992 | US5108950 Bonding to electrode pad through barrier/bonding metal alloy |
| 04/28/1992 | US5108948 Method of producing a semiconductor device having a disordered superlattice using an epitaxial solid diffusion source |
| 04/28/1992 | US5108947 Controlling formation of microcracks using shaped mask for crystal deposition |
| 04/28/1992 | US5108946 Method of forming planar isolation regions |
| 04/28/1992 | US5108945 Maintaining planarization |
| 04/28/1992 | US5108944 Method of manufacturing a semiconductor device |
| 04/28/1992 | US5108942 Master slice integrated circuit having a memory region |
| 04/28/1992 | US5108941 Forming refractory metal silicide on polysilicon; low temperature processing |
| 04/28/1992 | US5108940 Forming shallow conductive region by inversion |
| 04/28/1992 | US5108939 Method of making a non-volatile memory cell utilizing polycrystalline silicon spacer tunnel region |
| 04/28/1992 | US5108938 Method of making a trench gate complimentary metal oxide semiconductor transistor |
| 04/28/1992 | US5108937 Eliminating source to drain leakage |
| 04/28/1992 | US5108936 Applying doped hydrogenated silicon layer |
| 04/28/1992 | US5108935 Reduction of hot carrier effects in semiconductor devices by controlled scattering via the intentional introduction of impurities |
| 04/28/1992 | US5108843 Thin film semiconductor and process for producing the same |
| 04/28/1992 | US5108819 Thin film electrical component |
| 04/28/1992 | US5108792 Used for chemical vapor deposition thermal annealing require high temperature treatment |
| 04/28/1992 | US5108785 Via formation method for multilayer interconnect board |
| 04/28/1992 | US5108783 Process for producing semiconductor devices |
| 04/28/1992 | US5108720 Float zone processing of particulate silicon |
| 04/28/1992 | US5108570 Multistep sputtering process for forming aluminum layer over stepped semiconductor wafer |
| 04/28/1992 | US5108569 Process and apparatus for forming stoichiometric layer of a metal compound by closed loop voltage controlled reactive sputtering |
| 04/28/1992 | US5108562 Microelectronic packages; using base and oxidizer acid for copper etching |
| 04/28/1992 | US5108553 Two metal layer tape automated bonding |
| 04/28/1992 | US5108543 Method of surface treatment |
| 04/28/1992 | US5108542 Selective etching method for tungsten and tungsten alloys |
| 04/28/1992 | US5108541 Processes for electrically conductive decals filled with inorganic insulator material |
| 04/28/1992 | US5108540 Method for epitaxial growth from the vapor phase of semiconductor materials |
| 04/28/1992 | US5108536 Lead cut and tape attach apparatus |
| 04/28/1992 | US5108513 Allows for retardation and rotation |
| 04/28/1992 | US5108512 Cleaning of CVD reactor used in the production of polycrystalline silicon by impacting with carbon dioxide pellets |
| 04/28/1992 | US5108027 Barrier metallization layer between metallization layer that would react with solder and solder |
| 04/28/1992 | US5108023 Device for forming electric circuits on a lead frame |
| 04/28/1992 | CA1299773C Plasma processing method and apparatus |
| 04/28/1992 | CA1299771C Heterojunction bipolar transistor with collector buffer layer |
| 04/28/1992 | CA1299770C Techniques useful in fabricating semiconductor devices having submicron features |
| 04/28/1992 | CA1299769C Sequential-quenching resonant-tunneling transistor |
| 04/27/1992 | CA2054238A1 Large surface cathode arrangement of uniform consumption |
| 04/25/1992 | WO1992008247A1 Rapid-curing adhesive formulation for semiconductor devices |
| 04/25/1992 | WO1992008245A1 Method and apparatus for forming diffusion junctions in solar cell substrates |
| 04/25/1992 | WO1992007971A1 Cvd of metal films from beta-diketonate complexes |
| 04/25/1992 | CA2094292A1 Rapid-curing adhesive formulation for semiconductor devices |
| 04/25/1992 | CA2090038A1 Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal films |
| 04/25/1992 | CA2070380A1 Method and apparatus for forming diffusion junctions in solar cell substrates |
| 04/25/1992 | CA2051566A1 Low temperature plasma oxidation process |
| 04/23/1992 | DE4134547A1 Thin film transistor with improved gate dielectric breakdown voltage |
| 04/23/1992 | DE4133183A1 CCD housing structure assembly - uses automatically bondable foil with numerous outer and inner leads, and chip bonding straps |
| 04/23/1992 | DE4032962A1 Verwendung einer auf der basis optischer absorption arbeitenden massenfluss-ermittlungsvorrichtung zur dosierung von stoffen Using a working on the basis of optical absorption mass flow-determination device for dosing of materials |
| 04/23/1992 | CA2053581A1 Chemically stabilized cristobalite |
| 04/22/1992 | EP0481965A2 Step-cut insulated gate static induction transistors and method of manufacturing the same |
| 04/22/1992 | EP0481846A1 Assembly process of a metallic cover on a substrate comprising an integrated circuit |
| 04/22/1992 | EP0481826A1 An automatic wafer lapping apparatus |
| 04/22/1992 | EP0481777A2 Method of manufacturing gate insulated field effect transistors |
| 04/22/1992 | EP0481736A2 Organic resin multi-layer wiring substrate and method of making the same |
| 04/22/1992 | EP0481734A2 Light valve device |
| 04/22/1992 | EP0481723A1 A wafer etching apparatus |
| 04/22/1992 | EP0481706A1 Method of producing CVD silicon oxynitride film |
| 04/22/1992 | EP0481703A2 Interconnect structure for use with programming elements and test devices |
| 04/22/1992 | EP0481649A2 Apparatus for determining the surface topography of an article |
| 04/22/1992 | EP0481637A2 Method for firing ceramic articles |
| 04/22/1992 | EP0481559A2 A method of fabricating a field-effect transistor |
| 04/22/1992 | EP0481555A1 Heterostructure field-effect transistor |
| 04/22/1992 | EP0481539A1 Process for forming a filter |
| 04/22/1992 | EP0481506A2 Method of treating substrate and apparatus for the same |
| 04/22/1992 | EP0481472A1 Multilayer printed wiring board and process for manufacturing the same |