| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 05/27/1992 | CN1061492A Method and apparatus for forming diffusion junctions in solar cell substrates |
| 05/27/1992 | CN1061445A Process for forming metal deposited film containing aluminium as main component by use of alkly aluminium hydride |
| 05/26/1992 | US5117390 Semiconductor memory system for use in logic lsi's |
| 05/26/1992 | US5117389 Flat-cell read-only-memory integrated circuit |
| 05/26/1992 | US5117280 Plastic package semiconductor device with thermal stress resistant structure |
| 05/26/1992 | US5117279 Semiconductor device having a low temperature uv-cured epoxy seal |
| 05/26/1992 | US5117277 Semiconductor integrated circuit device with improved connection pattern of signal wirings |
| 05/26/1992 | US5117276 High performance interconnect system for an integrated circuit |
| 05/26/1992 | US5117275 Electronic substrate multiple location conductor attachment technology |
| 05/26/1992 | US5117274 Merged complementary bipolar and MOS means and method |
| 05/26/1992 | US5117273 Contact for integrated circuits |
| 05/26/1992 | US5117272 Having a protective film of a polymer having a fluorine-containing aliphatic cyclic structure |
| 05/26/1992 | US5117271 Low capacitance bipolar junction transistor and fabrication process therfor |
| 05/26/1992 | US5117269 Eprom memory array with crosspoint configuration |
| 05/26/1992 | US5117206 Variable capacitance integrated circuit usable in temperature compensated oscillators |
| 05/26/1992 | US5117130 Integrated circuits which compensate for local conditions |
| 05/26/1992 | US5117127 Customizable logic integrated circuit with multiple-drain transistor for adjusting switching speed |
| 05/26/1992 | US5117125 Logic level control for impact ionization sensitive processes |
| 05/26/1992 | US5117121 Method of and apparatus for applying voltage to electrostatic chuck |
| 05/26/1992 | US5117117 Electron beam exposure system having an improved seal element for interfacing electric connections |
| 05/26/1992 | US5116785 Decomposing fluorinated organometallic complex of beryllium, calcium, strontium, barium or lanthanide in vicinity of semiconductor substrate |
| 05/26/1992 | US5116784 Method of forming semiconductor film |
| 05/26/1992 | US5116783 Method of producing semiconductor device |
| 05/26/1992 | US5116782 Method and apparatus for processing a fine pattern |
| 05/26/1992 | US5116781 Zinc diffusion process |
| 05/26/1992 | US5116780 Method of manufacturing a semiconductor device having improved contact resistance characteristics |
| 05/26/1992 | US5116779 Process for forming semiconductor device isolation regions |
| 05/26/1992 | US5116778 In situ doping with doped glasses of both sidewalls of isolation trenches and connector regions between sources and gate areas and between drains and gate areas in semiconductors |
| 05/26/1992 | US5116777 Memory and integrated devices, epitaxial silicon layer with P-type regions, contacts to N-type buried layer through epitaxial layer, N-channel field effect devices in P-type regions |
| 05/26/1992 | US5116776 Method of making a stacked copacitor for dram cell |
| 05/26/1992 | US5116775 Method of producing semiconductor memory device with buried barrier layer |
| 05/26/1992 | US5116774 Semiconductor substrate; several semiconductor layers with channel layer having at least one additional layer; ohmic, gate contacts on layers; removing parts of additional layer between contacts; gate, ohmic metal; source, drain regions |
| 05/26/1992 | US5116773 Heterojunction; epitaxy growth of gallium indium arsenide/ phosphide/ layers, N-type indium phosphide layer, P-type indium phosphide layer for P-N junction; etching; photoresist mask; gate, source-drain metal evaporation |
| 05/26/1992 | US5116772 Homojunction; epitaxy growth of N-type indium phosphide channel layer, P-type indium phosphide layer for P-N junction; growing, etching gallium indium arsenide/phosphide/ layer; etching photoresist mask; gate, source-drain metal evaporation |
| 05/26/1992 | US5116771 Silicon channel regions between silicon source and drain regions of epitaxial silicon film on insulator substrate, protective layer over silicon film, mask layer, removing regions of mask layer, thinning silicon underlying openings |
| 05/26/1992 | US5116770 Method for fabricating bipolar semiconductor devices |
| 05/26/1992 | US5116768 Fabrication method of a semiconductor integrated circuit having an SOI device and a bulk semiconductor device on a common semiconductor substrate |
| 05/26/1992 | US5116767 Semiconductor laser passivation and overstressing |
| 05/26/1992 | US5116715 Photosensitive compositions containing aromatic fused polycyclic sulfonic acid and partial ester of phenolic resin with diazoquinonesulfonic acid or diazoquinonecarboxylic acid |
| 05/26/1992 | US5116663 Ceramic substrate material containing an amorphous fluorine resin |
| 05/26/1992 | US5116657 Spheroid copper and copper oxide particles coated with organic titanium compound; printed circuit substrates |
| 05/26/1992 | US5116643 Lead, lanthanum, zirconium, titanium ceramics |
| 05/26/1992 | US5116641 Method for laser scribing substrates |
| 05/26/1992 | US5116640 Separate vapor deposition of insulating ang luminescent layers in chamber |
| 05/26/1992 | US5116637 Amine catalysts for the low temperature conversion of silica precursors to silica |
| 05/26/1992 | US5116464 Cesium hydroxide etch of a semiconductor crystal |
| 05/26/1992 | US5116463 Filling aperture in mask which then change the electrochemical potential |
| 05/26/1992 | US5116462 Cantilever beam; coating, masking, etching |
| 05/26/1992 | US5116460 Semiconductors |
| 05/26/1992 | US5116459 Processes for electrically conductive decals filled with organic insulator material |
| 05/26/1992 | US5116455 Gallium arsenide codoped with indium or antimony |
| 05/26/1992 | US5116250 Method and apparatus for applying a coating material to a substrate |
| 05/26/1992 | US5116228 Method for bump formation and its equipment |
| 05/26/1992 | US5116185 Vibratory tube-to-tube transfer system |
| 05/26/1992 | US5116181 Robotically loaded epitaxial deposition apparatus |
| 05/26/1992 | US5116031 Clamping device for bonding machines |
| 05/26/1992 | US5115960 Wire bonding method |
| 05/26/1992 | US5115912 Electrical component carrier with shock absorbing means |
| 05/26/1992 | US5115858 Micro-channel wafer cooling chuck |
| 05/26/1992 | US5115576 Vapor device and method for drying articles such as semiconductor wafers with substances such as isopropyl alcohol |
| 05/26/1992 | CA1301993C Polyquinoxaline polymers, and articles comprising same |
| 05/26/1992 | CA1301958C Method and apparatus for venting vacuum processing equipment |
| 05/26/1992 | CA1301957C Germanium-silicon semiconductor heterostructures |
| 05/26/1992 | CA1301956C Method of making an article comprising a tandem groove, and articleproduced by the method |
| 05/26/1992 | CA1301954C Noninvasive method and apparatus for characterization of semiconductors |
| 05/26/1992 | CA1301949C Device for interconnection and protection of a bare microwave componentchip |
| 05/26/1992 | CA1301896C Photoelectric conversion device |
| 05/26/1992 | CA1301522C Laminate for the formation of beam leads for ic chip bonding |
| 05/21/1992 | WO1992009104A1 Silicon-on-porous-silicon; method of production and material |
| 05/21/1992 | EP0494184A4 Nmos device with integral esd protection. |
| 05/21/1992 | DE4138731A1 X=ray exposure appts. with microchip support for IC mfr. - has target object holder mounted for shifting w.r.t. microchip support into 2 positions for mounting and exposing |
| 05/21/1992 | DE4138057A1 Semiconductor device for use in MOS transistor mfr. - comprising polycrystalline silicon gate electrode with defined crystal orientation, semiconductor substrate and pair of impurity regions |
| 05/21/1992 | DE4131078A1 Capacitor structure for DRAM cell - has two types of spacers with two sides, supporting subsequently formed layers respectively |
| 05/21/1992 | DE4036222A1 Verfahren zur herstellung von halbleiterelementen, insbesondere von dioden A process for the production of semiconductor elements, in particular diodes |
| 05/21/1992 | CA2094237A1 Silicon-on-porous-silicon, method of production and material |
| 05/21/1992 | CA2055845A1 Method of mounting semiconductor elements |
| 05/21/1992 | CA2055422A1 Deposition of tungsten films from mixtures of tungsten hexafluoride, organohydrosilanes and hydrogen |
| 05/20/1992 | WO1992008606A1 Microelectronics package |
| 05/20/1992 | EP0486444A2 Double metal, bank erasable, flash-EPROM memory |
| 05/20/1992 | EP0486393A1 Sol-gel deposition process for thin layers by ultrasonic spraying |
| 05/20/1992 | EP0486318A1 Semiconductor device for use in a light valve device, and process for manufacturing the same |
| 05/20/1992 | EP0486249A2 Eprom array |
| 05/20/1992 | EP0486248A2 Logic duplication method for reducing circuit size and delay time |
| 05/20/1992 | EP0486244A1 Method of producing low resistance contacts |
| 05/20/1992 | EP0486201A2 Method for production of a dielectric-separation substrate |
| 05/20/1992 | EP0486149A2 Method and apparatus for reducing tilt angle variations in an ion implanter |
| 05/20/1992 | EP0486134A1 A biCMOS process with low base recombination current bipolar transistors |
| 05/20/1992 | EP0486066A1 Method for forming crystal article |
| 05/20/1992 | EP0486063A2 Field-effect transistor |
| 05/20/1992 | EP0486062A1 High-frequency oscillator |
| 05/20/1992 | EP0486047A2 Thin film semiconductor device, process for fabricating the same, and silicon film |
| 05/20/1992 | EP0486027A2 Resin sealed semiconductor device |
| 05/20/1992 | EP0486019A1 Method for forming single crystal layer |
| 05/20/1992 | EP0485907A1 Ultrahigh-purity ferroelectric thin film |
| 05/20/1992 | EP0485830A1 Process for the recrystallization of a pre-amorphized superficial zone of a semi-conductor |
| 05/20/1992 | EP0485802A1 Method of preventing corrosion of aluminium alloys |
| 05/20/1992 | EP0485760A1 Low temperature controlled collapse chip attach process |
| 05/20/1992 | EP0485720A2 Dielectrically isolated substrate and a process for producing the same |
| 05/20/1992 | EP0485719A2 Dielectrically isolated substrate and a process for producing the same |
| 05/20/1992 | EP0485648A1 Semiconductor device with a high blocking voltage |