Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Patents for G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133)
12/2010
12/29/2010CN101930802A E-fuse apparatus
12/29/2010CN101047034B Memory
12/28/2010US7859934 Method and apparatus for redundant memory configuration in voltage island
12/28/2010US7859933 Semiconductor memory device and operating method thereof
12/28/2010US7859884 Structure and method for biasing phase change memory array for reliable writing
12/23/2010WO2010147029A1 Semiconductor device
12/22/2010EP2264714A1 Unit cell of nonvolatile memory device and nonvolatile memory device with the same
12/22/2010CN1692452B Semiconductor device and method of controlling the semiconductor device
12/16/2010US20100315856 High-density non-volatile read-only memory arrays and related methods
12/16/2010US20100315855 Rom array with shared bit-lines
12/15/2010CN1624803B 半导体集成电路装置 The semiconductor integrated circuit device
12/15/2010CN101436435B Electrical fuse self test and repair
12/15/2010CN101364445B Electric fuse devices
12/14/2010US7852697 Integrated circuit feature definition using one-time-programmable (OTP) memory
12/14/2010US7852660 Enhancing read and write sense margins in a resistive sense element
12/14/2010US7852656 One-time programmable cell and memory device having the same
12/09/2010WO2010139925A1 Switchable electronic device and method of switching said device
12/09/2010US20100309709 Unit cell of nonvolatile memory device and nonvolatile memory device with the same
12/09/2010DE10254155B4 Maskenprogrammierbares ROM-Bauelement Mask programmable ROM device
12/08/2010CN1979683B Nonvolatile semiconductor memory
12/08/2010CN101908548A Disposal programmable memorizer, manufacturing method thereof and programming reading method thereof
12/08/2010CN101908547A One time programmable memory and making, programming and reading method
12/08/2010CN101908546A Disposable programmable memory as well as manufacturing and programming read method
12/08/2010CN101908380A Unit cell of nonvolatile memory device and nonvolatile memory device with the same
12/02/2010US20100302890 Electrical Fuse, Semiconductor Device Having the Same, and Method of Programming and Reading the Electrical Fuse
12/02/2010US20100302833 Semiconductor device having nonvolatile memory element and manufacturing method thereof
12/01/2010EP1899978B1 Memory cell with high-k antifuse for reverse bias programming
12/01/2010CN101308704B Electrical fuse circuit for security applications
11/2010
11/25/2010US20100296328 Buried bit line anti-fuse one-time-programmable nonvolatile memory
11/18/2010US20100290303 Semiconductor device
11/18/2010US20100290302 Fuse circuit and driving method thereof
11/18/2010US20100290301 Memory array incorporating noise detection line
11/18/2010US20100290298 Fuse circuit and redundancy circuit
11/18/2010US20100288996 Memory arrays including memory levels that share conductors, and methods of forming such memory arrays
11/18/2010CA2708593A1 Redundancy system for non-volatile memory
11/17/2010EP2250671A1 Integrated circuit with mosfet fuse element
11/17/2010CN101887760A Fuse circuit and redundancy circuit
11/17/2010CN101887756A One time programmable (OTP) unit and array as well as programming and reading method thereof
11/16/2010US7835211 Semiconductor device and method of fabricating the same
11/16/2010US7833843 Method for forming a memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide
11/11/2010US20100284233 Semiconductor memory device
11/11/2010US20100284222 Fuse circuit and flash memory device having the same
11/11/2010US20100284210 One-time programmable memory cell
11/11/2010DE102004025975B4 Phasenänderungsspeicherbauelement und Programmierverfahren Phase change memory device and programming method
11/10/2010EP2249352A1 Phase change memory
11/10/2010CN101882469A Fuse circuit, system and method
11/10/2010CN101882462A Setting operation method of resistance random access memory
11/09/2010US7831870 JTAG controlled self-repair after packaging
11/09/2010US7830694 Large array of upward pointing p-i-n diodes having large and uniform current
11/09/2010US7830205 Fuse circuit for use in a semiconductor integrated apparatus
11/09/2010CA2646367C Low threshold voltage anti-fuse device
11/04/2010US20100277999 Fuse circuit and semiconductor device having the same
11/04/2010DE102008048830B4 Schaltungsanordnung mit Schmelzsicherung und Verfahren zum Ermitteln eines Zustands einer Schmelzsicherung Circuit arrangement with fuse and method for determining a state of a fuse
11/03/2010CN101454902B Memory element, data recording and recording method, and ic tag
11/03/2010CN101452938B Programmable non-volatile memory chip unit
11/03/2010CN101414659B Multi-state memory unit, memory device and method for forming multi-state memory unit
11/03/2010CN101127246B Electric fuse circuit and electronic component
11/02/2010US7826296 Fuse monitoring circuit for semiconductor memory device
11/02/2010US7826295 Semiconductor memory device including a repair circuit which includes mode fuses
11/02/2010US7826286 Semiconductor memory device with redundancy circuit
11/02/2010CA2682092C And-type one time programmable memory cell
10/2010
10/28/2010US20100272265 System and method to control one time programmable memory
10/28/2010US20100271897 Anti-fuse memory cell and semiconductor memory device
10/27/2010CN101872764A OTP-ROM (One Time Programmable Read Only Memory), memory units thereof and manufacturing, programming and reading method thereof
10/27/2010CN101872648A MOS (Metal Oxide Semiconductor) one time programmable device
10/27/2010CN101872647A One-time programming resistance random memory unit, array, memory and operation method thereof
10/27/2010CN101872646A NMOS (N-channel Metal Oxide Semiconductor) one time programmable device
10/27/2010CN101076866B System and method for collocating integrate circuit
10/26/2010US7821806 Nonvolatile semiconductor memory circuit utilizing a MIS transistor as a memory cell
10/26/2010US7821088 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization
10/21/2010US20100265755 One time programmable read only memory and programming method thereof
10/21/2010US20100265754 Semiconductor memory device and data processing device
10/19/2010USRE41838 Output buffer circuit and semiconductor memory using the same
10/19/2010US7817456 Program lock circuit for a mask programmable anti-fuse memory array
10/19/2010US7817455 Random access electrically programmable e-fuse ROM
10/19/2010US7816189 Vertically stacked field programmable nonvolatile memory and method of fabrication
10/14/2010US20100260001 Memory device and methods thereof
10/14/2010US20100259965 High speed otp sensing scheme
10/12/2010US7813157 Non-linear conductor memory
10/07/2010US20100254205 Integrated circuit
10/06/2010CN1742342B Source-biased memory cell array
10/06/2010CN101540318B Three-dimensional read only memory (3D-ROM) adopting crystallite semiconductor materials
10/05/2010US7808810 Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse
09/2010
09/30/2010WO2010109803A1 Resistance-change non-volatile memory device
09/30/2010US20100246237 Anti-fuse element
09/30/2010US20100244892 Rom implementation for rom based logic design
09/30/2010US20100244186 Nonvolatile semiconductor memory device and method for manufacturing same
09/29/2010EP2232499A1 Large capacity one-time programmable memory cell using metal oxides
09/28/2010US7804701 Method of programming a memory having electrically programmable fuses
09/23/2010US20100238741 Semiconductor device and write control method for semiconductor device
09/22/2010CN101842899A Method for integrating NVM circuitry with logic circuitry
09/22/2010CN101127244B Semiconductor memory device containing antifuse write voltage generation circuit
09/21/2010USRE41734 Read-only memory having specially output circuits and word line connected to a group of memory cells
09/21/2010USRE41733 Dual-addressed rectifier storage device
09/16/2010WO2010104918A1 Three-dimensional memory array comprising vertical switches having three terminals
09/16/2010US20100232248 Implementing eFuse Resistance Determination Before Initiating eFuse Blow
09/16/2010US20100232203 Electrical anti-fuse and related applications
09/15/2010CN101246746B Virtual electronic fuse apparatus and methodology
09/14/2010US7796456 Semiconductor device
09/14/2010CA2666120C One-time-programmable logic bit with multiple logic elements
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